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1. 发明申请

US20090285998A1 PLASMA PROCESSING APPARATUS, ELECTRODE PLATE FOR PLASMA PROCESSING APPARATUS, AND ELECTRODE PLATE MANUFACTURING METHOD 有权
标题翻译：等离子体处理装置，等离子体处理装置的电极板和电极板的制造方法
公开(公告)号：US20090285998A1
公开(公告)日：2009-11-19
申请号：US12505940
申请日：2009-07-20
申请人： Katsuya Okumura , Shinji Himori , Kazuya Nagaseki , Hiroki Matsumaru , Shoichiro Matsuyama , Toshiki Takahashi
发明人： Katsuya Okumura , Shinji Himori , Kazuya Nagaseki , Hiroki Matsumaru , Shoichiro Matsuyama , Toshiki Takahashi
IPC分类号： C23C16/513 , C23C14/24 , C23C16/04 , B05D1/32
CPC分类号： H01L21/3065 , H01J37/32009 , H01J37/32082 , H01J37/32541
摘要： A plasma processing apparatus for performing a plasma process on a target substrate includes a process container configured to accommodate the target substrate and to reduce pressure therein. A first electrode is disposed within the process container. A supply system is configured to supply a process gas into the process container. An electric field formation system is configured to form an RF electric field within the process container so as to generate plasma of the process gas. A number of protrusions are discretely disposed on a main surface of the first electrode and protrude toward a space where the plasma is generated.
摘要翻译：用于在目标衬底上执行等离子体处理的等离子体处理装置包括：配置成容纳目标衬底并减少其中的压力的处理容器。第一电极设置在处理容器内。供应系统被配置为将处理气体供应到处理容器中。电场形成系统被配置为在处理容器内形成RF电场，以产生处理气体的等离子体。多个突起离散地设置在第一电极的主表面上，朝向产生等离子体的空间突出。

2. 发明申请

US20050276928A1 Plasma processing apparatus, electrode plate for plasma processing apparatus, and electrode plate manufacturing method 有权
标题翻译：等离子体处理装置，等离子体处理装置用电极板及电极板的制造方法
公开(公告)号：US20050276928A1
公开(公告)日：2005-12-15
申请号：US11195803
申请日：2005-08-03
申请人： Katsuya Okumura , Shinji Himori , Kazuya Nagaseki , Hiroki Matsumaru , Shoichiro Matsuyama , Toshiki Takahashi
发明人： Katsuya Okumura , Shinji Himori , Kazuya Nagaseki , Hiroki Matsumaru , Shoichiro Matsuyama , Toshiki Takahashi
IPC分类号： H05H1/46 , B01J19/08 , C23C14/00 , C23F4/00 , C25D17/10 , H01J37/32 , H01L21/205 , H01L21/3065
CPC分类号： H01L21/3065 , H01J37/32009 , H01J37/32082 , H01J37/32541
摘要： A plasma processing apparatus for performing a plasma process on a target substrate includes a process container configured to accommodate the target substrate and to reduce pressure therein. A first electrode is disposed within the process container. A supply system is configured to supply a process gas into the process container. An electric field formation system is configured to form an RF electric field within the process container so as to generate plasma of the process gas. A number of protrusions are discretely disposed on a main surface of the first electrode and protrude toward a space where the plasma is generated.
摘要翻译：用于在目标衬底上执行等离子体处理的等离子体处理装置包括：配置成容纳目标衬底并减少其中的压力的处理容器。第一电极设置在处理容器内。供应系统被配置为将处理气体供应到处理容器中。电场形成系统被配置为在处理容器内形成RF电场，以产生处理气体的等离子体。多个突起离散地设置在第一电极的主表面上，朝向产生等离子体的空间突出。

3. 发明授权

US07585386B2 Plasma processing apparatus, electrode plate for plasma processing apparatus, and electrode plate manufacturing method 有权
标题翻译：等离子体处理装置，等离子体处理装置用电极板及电极板的制造方法
公开(公告)号：US07585386B2
公开(公告)日：2009-09-08
申请号：US11195803
申请日：2005-08-03
申请人： Katsuya Okumura , Shinji Himori , Kazuya Nagaseki , Hiroki Matsumaru , Shoichiro Matsuyama , Toshiki Takahashi
发明人： Katsuya Okumura , Shinji Himori , Kazuya Nagaseki , Hiroki Matsumaru , Shoichiro Matsuyama , Toshiki Takahashi
IPC分类号： H01L21/00 , C23C16/00
CPC分类号： H01L21/3065 , H01J37/32009 , H01J37/32082 , H01J37/32541
摘要： A plasma processing apparatus for performing a plasma process on a target substrate includes a process container configured to accommodate the target substrate and to reduce pressure therein. A first electrode is disposed within the process container. A supply system is configured to supply a process gas into the process container. An electric field formation system is configured to form an RF electric field within the process container so as to generate plasma of the process gas. A number of protrusions are discretely disposed on a main surface of the first electrode and protrude toward a space where the plasma is generated.
摘要翻译：用于在目标衬底上执行等离子体处理的等离子体处理装置包括：配置成容纳目标衬底并减少其中的压力的处理容器。第一电极设置在处理容器内。供应系统被配置为将处理气体供应到处理容器中。电场形成系统被配置为在处理容器内形成RF电场，以产生处理气体的等离子体。多个突起离散地设置在第一电极的主表面上，朝向产生等离子体的空间突出。

4. 发明授权

US07922862B2 Plasma processing apparatus, electrode plate for plasma processing apparatus, and electrode plate manufacturing method 有权
标题翻译：等离子体处理装置，等离子体处理装置用电极板及电极板的制造方法
公开(公告)号：US07922862B2
公开(公告)日：2011-04-12
申请号：US12505940
申请日：2009-07-20
申请人： Katsuya Okumura , Shinji Himori , Kazuya Nagaseki , Hiroki Matsumaru , Shoichiro Matsuyama , Toshiki Takahashi
发明人： Katsuya Okumura , Shinji Himori , Kazuya Nagaseki , Hiroki Matsumaru , Shoichiro Matsuyama , Toshiki Takahashi
IPC分类号： H01L21/00 , C23C14/00 , C23C16/00
CPC分类号： H01L21/3065 , H01J37/32009 , H01J37/32082 , H01J37/32541
摘要： A plasma processing apparatus for performing a plasma process on a target substrate includes a process container configured to accommodate the target substrate and to reduce pressure therein. A first electrode is disposed within the process container. A supply system is configured to supply a process gas into the process container. An electric field formation system is configured to form an RF electric field within the process container so as to generate plasma of the process gas. A number of protrusions are discretely disposed on a main surface of the first electrode and protrude toward a space where the plasma is generated.
摘要翻译：用于在目标衬底上执行等离子体处理的等离子体处理装置包括：配置成容纳目标衬底并减少其中的压力的处理容器。第一电极设置在处理容器内。供应系统被配置为将处理气体供应到处理容器中。电场形成系统被配置为在处理容器内形成RF电场，以产生处理气体的等离子体。多个突起离散地设置在第一电极的主表面上，朝向产生等离子体的空间突出。

5. 发明申请

US20060118044A1 Capacitive coupling plasma processing apparatus 有权
标题翻译：电容耦合等离子体处理装置
公开(公告)号：US20060118044A1
公开(公告)日：2006-06-08
申请号：US11292353
申请日：2005-12-02
申请人： Shinji Himori , Noriaki Imai , Katsumi Horiguchi , Takaaki Nezu , Shoichiro Matsuyama , Hiroki Matsumaru , Toshihiro Hayami , Kazuya Nagaseki , Itsuko Sakai , Tokuhisa Ohiwa , Yoshikazu Sugiyasu
发明人： Shinji Himori , Noriaki Imai , Katsumi Horiguchi , Takaaki Nezu , Shoichiro Matsuyama , Hiroki Matsumaru , Toshihiro Hayami , Kazuya Nagaseki , Itsuko Sakai , Tokuhisa Ohiwa , Yoshikazu Sugiyasu
IPC分类号： C23F1/00 , C23C16/00
CPC分类号： H01J37/32697 , H01J37/32082
摘要： A capacitive coupling plasma processing apparatus includes a process chamber configured to have a vacuum atmosphere, and a process gas supply section configured to supply a process gas into the chamber. In the chamber, a first electrode and a second electrode are disposed opposite each other. An RF power supply is disposed to supply an RF power to the first or second electrode to form an RF electric field within a plasma generation region between the first and second electrodes, so as to turn the process gas into plasma. The target substrate is supported by a support member between the first and second electrodes such that a process target surface thereof faces the second electrode. A conductive functional surface is disposed in a surrounding region around the plasma generation region and grounded to be coupled with the plasma in a sense of DC to expand the plasma.
摘要翻译：电容耦合等离子体处理装置包括被配置为具有真空气氛的处理室和被配置为将处理气体供应到室中的处理气体供给部。在腔室中，第一电极和第二电极相对设置。设置RF电源以向第一或第二电极提供RF功率，以在第一和第二电极之间的等离子体产生区域内形成RF电场，以将处理气体转化为等离子体。目标基板由第一和第二电极之间的支撑构件支撑，使得其工艺目标表面面向第二电极。导电功能表面设置在等离子体产生区域周围的周围区域中，并且被接地以与DC等离子体耦合以扩展等离子体。

6. 发明授权

US07767055B2 Capacitive coupling plasma processing apparatus 有权
标题翻译：电容耦合等离子体处理装置
公开(公告)号：US07767055B2
公开(公告)日：2010-08-03
申请号：US11292353
申请日：2005-12-02
申请人： Shinji Himori , Noriaki Imai , Katsumi Horiguchi , Takaaki Nezu , Shoichiro Matsuyama , Hiroki Matsumaru , Toshihiro Hayami , Kazuya Nagaseki , Itsuko Sakai , Tokuhisa Ohiwa , Yoshikazu Sugiyasu
发明人： Shinji Himori , Noriaki Imai , Katsumi Horiguchi , Takaaki Nezu , Shoichiro Matsuyama , Hiroki Matsumaru , Toshihiro Hayami , Kazuya Nagaseki , Itsuko Sakai , Tokuhisa Ohiwa , Yoshikazu Sugiyasu
IPC分类号： C23F1/00 , H01L21/306 , C23C16/00
CPC分类号： H01J37/32697 , H01J37/32082
摘要： A capacitive coupling plasma processing apparatus includes a process chamber configured to have a vacuum atmosphere, and a process gas supply section configured to supply a process gas into the chamber. In the chamber, a first electrode and a second electrode are disposed opposite each other. An RF power supply is disposed to supply an RF power to the first or second electrode to form an RF electric field within a plasma generation region between the first and second electrodes, so as to turn the process gas into plasma. The target substrate is supported by a support member between the first and second electrodes such that a process target surface thereof faces the second electrode. A conductive functional surface is disposed in a surrounding region around the plasma generation region and grounded to be coupled with the plasma in a sense of DC to expand the plasma.
摘要翻译：电容耦合等离子体处理装置包括被配置为具有真空气氛的处理室和被配置为将处理气体供应到室中的处理气体供给部。在腔室中，第一电极和第二电极相对设置。设置RF电源以向第一或第二电极提供RF功率，以在第一和第二电极之间的等离子体产生区域内形成RF电场，以将处理气体转化为等离子体。目标基板由第一和第二电极之间的支撑构件支撑，使得其工艺目标表面面向第二电极。导电功能表面设置在等离子体产生区域周围的周围区域中，并且被接地以与DC等离子体耦合以扩展等离子体。

7. 发明申请

US20060081337A1 Capacitive coupling plasma processing apparatus 审中-公开
标题翻译：电容耦合等离子体处理装置
公开(公告)号：US20060081337A1
公开(公告)日：2006-04-20
申请号：US11292368
申请日：2005-12-02
申请人： Shinji Himori , Kimihiro Higuchi , Tatsuo Matsudo , Etsuo Iijima , Hiroharu Ito , Shoichiro Matsuyama , Noriaki Imai , Kazuya Nagaseki
发明人： Shinji Himori , Kimihiro Higuchi , Tatsuo Matsudo , Etsuo Iijima , Hiroharu Ito , Shoichiro Matsuyama , Noriaki Imai , Kazuya Nagaseki
IPC分类号： C23F1/00 , C23C14/00
CPC分类号： H01J37/32091 , H01J2237/2001
摘要： A capacitive coupling plasma processing apparatus includes a process chamber configured to have a vacuum atmosphere, and a process gas supply section configured to supply a process gas into the chamber. In the chamber, a first electrode serving as a cathode electrode, and a second electrode grounded to serve as an anode electrode are disposed opposite each other. An RF power supply is disposed to supply an RF power to the first electrode to form an RF electric field within a plasma generation region between the first and second electrodes, so as to turn the process gas into plasma. The target substrate is supported by a support member between the first and second electrodes such that a process target surface thereof faces the second electrode. The second electrode includes a conductive counter surface facing the first electrode and exposed to the plasma generation region.
摘要翻译：电容耦合等离子体处理装置包括被配置为具有真空气氛的处理室和被配置为将处理气体供应到室中的处理气体供给部。在室中，用作阴极的第一电极和接地以用作阳极的第二电极彼此相对地设置。设置RF电源以向第一电极提供RF功率以在第一和第二电极之间的等离子体产生区域内形成RF电场，以将处理气体转化为等离子体。目标基板由第一和第二电极之间的支撑构件支撑，使得其工艺目标表面面向第二电极。第二电极包括面向第一电极并暴露于等离子体产生区域的导电计数器表面。

8. 发明授权

US07625494B2 Plasma etching method and plasma etching unit 失效
标题翻译：等离子体蚀刻方法和等离子体蚀刻单元
公开(公告)号：US07625494B2
公开(公告)日：2009-12-01
申请号：US10860152
申请日：2004-06-04
申请人： Masanobu Honda , Kazuya Nagaseki , Koichiro Inazawa , Shoichiro Matsuyama , Hisataka Hayashi
发明人： Masanobu Honda , Kazuya Nagaseki , Koichiro Inazawa , Shoichiro Matsuyama , Hisataka Hayashi
IPC分类号： H01L21/00 , B23K10/00 , H05H1/18
CPC分类号： H01J37/32082 , H01J37/3266 , H01L21/31138 , H01L21/31144 , H01L21/76802
摘要： The present invention is a plasma etching method including: an arranging step of arranging a pair of electrodes oppositely in a chamber and making one of the electrodes support a substrate to be processed in such a manner that the substrate is arranged between the electrodes, the substrate having an organic-material film and an inorganic-material film; and an etching step of applying a high-frequency electric power to at least one of the electrodes to form a high-frequency electric field between the pair of the electrodes, supplying a process gas into the chamber to form a plasma of the process gas by means of the electric field, and selectively plasma-etching the organic-material film of the substrate with respect to the inorganic-material film by means of the plasma; wherein a frequency of the high-frequency electric power applied to the at least one of the electrodes is 50 to 150 MHz in the etching step.
摘要翻译：本发明是一种等离子体蚀刻方法，包括：将一对电极相对设置在室中并使其中一个电极以使基板布置在电极之间的方式支撑待加工基板的布置步骤，基板具有有机材料膜和无机材料膜; 以及蚀刻步骤，向所述电极中的至少一个施加高频电力，以在所述一对电极之间形成高频电场，将处理气体供应到所述室中以形成所述处理气体的等离子体，以通过电场的手段，通过等离子体选择性地等离子体蚀刻衬底相对于无机材料膜的有机材料膜; 其中在所述蚀刻步骤中施加到所述至少一个所述电极的所述高频电力的频率为50〜150MHz。

9. 发明授权

US08840753B2 Plasma etching unit 有权
标题翻译：等离子体蚀刻单元
公开(公告)号：US08840753B2
公开(公告)日：2014-09-23
申请号：US12578007
申请日：2009-10-13
申请人： Masanobu Honda , Kazuya Nagaseki , Koichiro Inazawa , Shoichiro Matsuyama , Hisataka Hayashi
发明人： Masanobu Honda , Kazuya Nagaseki , Koichiro Inazawa , Shoichiro Matsuyama , Hisataka Hayashi
IPC分类号： H01L21/306 , C23C16/50 , C23C16/00 , H01L21/311 , H01L21/768 , H01J37/32
CPC分类号： H01J37/32082 , H01J37/3266 , H01L21/31138 , H01L21/31144 , H01L21/76802
摘要： The present invention is a plasma etching method including: an arranging step of arranging a pair of electrodes oppositely in a chamber and making one of the electrodes support a substrate to be processed in such a manner that the substrate is arranged between the electrodes, the substrate having an organic-material film and an inorganic-material film; and an etching step of applying a high-frequency electric power to at least one of the electrodes to form a high-frequency electric field between the pair of the electrodes, supplying a process gas into the chamber to form a plasma of the process gas by means of the electric field, and selectively plasma-etching the organic-material film of the substrate with respect to the inorganic-material film by means of the plasma; wherein a frequency of the high-frequency electric power applied to the at least one of the electrodes is 50 to 150 MHz in the etching step.
摘要翻译：本发明是一种等离子体蚀刻方法，包括：将一对电极相对设置在室中并使其中一个电极以使基板布置在电极之间的方式支撑待加工基板的布置步骤，基板具有有机材料膜和无机材料膜; 以及蚀刻步骤，向所述电极中的至少一个施加高频电力，以在所述一对电极之间形成高频电场，将处理气体供应到所述室中以形成所述处理气体的等离子体，以通过电场的手段，通过等离子体选择性地等离子体蚀刻衬底相对于无机材料膜的有机材料膜; 其中在所述蚀刻步骤中施加到所述至少一个所述电极的所述高频电力的频率为50〜150MHz。

10. 发明授权

US07419613B2 Method and device for plasma-etching organic material film 有权
标题翻译：等离子体蚀刻有机材料膜的方法和装置
公开(公告)号：US07419613B2
公开(公告)日：2008-09-02
申请号：US10538064
申请日：2003-12-25
申请人： Masanobu Honda , Shoichiro Matsuyama , Kazuya Nagaseki , Hisataka Hayashi
发明人： Masanobu Honda , Shoichiro Matsuyama , Kazuya Nagaseki , Hisataka Hayashi
IPC分类号： B44C1/22
CPC分类号： H01L21/31138 , H01J37/32522 , H01J37/32633 , H01J37/32642 , H01J37/32688 , H01J2237/3341
摘要： A support electrode (2) and a counter electrode (16) constituting parallel plate electrodes are disposed in a process vessel (1). A substrate (W) with an organic material film formed thereon is supported by the support electrode (2). A high-frequency power of a frequency of 40 MHz or above for generating the plasma is applied to the support electrode (2), so that a high-frequency electric field is formed between the support electrode (2) and the counter electrode (16). A process gas is supplied into the process vessel (1) to generate plasma of the process gas by the high-frequency electric field. The organic material film on the substrate (W) is etched with the plasma, with an organic material film serving as a mask. The process gas includes an ionization accelerating gas, such as Ar, that is ionized from a ground state or metastable state with an ionization energy of 10 eV or below and has a maximum ionization cross-section of 2×1016 cm2 or above.
摘要翻译：构成平行板电极的支撑电极（2）和对置电极（16）设置在处理容器（1）中。形成有有机材料膜的基板（W）由支撑电极（2）支撑。在支撑电极（2）上施加用于产生等离子体的频率为40MHz以上的高频电力，使得在支撑电极（2）和对电极（16）之间形成高频电场）。将处理气体供给到处理容器（1）中，以通过高频电场产生处理气体的等离子体。用等离子体对基板（W）上的有机材料膜进行蚀刻，将有机材料膜用作掩模。工艺气体包括电离加速气体，例如Ar，其离子化能为10eV或更低的基态或亚稳态离子化，并且具有最大离子化横截面积为2×10 16 cm 2以上。

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