会员体验
专利管家(专利管理)
工作空间(专利管理)
风险监控(情报监控)
数据分析(专利分析)
侵权分析(诉讼无效)
联系我们
交流群
官方交流:
QQ群: 891211   
微信请扫码    >>>
现在联系顾问~
热词
    • 2. 发明授权
    • Waveguide type optical device and position detecting method
    • 波导型光学装置及位置检测方法
    • US07006722B2
    • 2006-02-28
    • US10509012
    • 2003-03-28
    • Katsuhiko KurumadaToshiaki TamamuraMasatoshi KanayaShigendo NishiKeiichi Akagawa
    • Katsuhiko KurumadaToshiaki TamamuraMasatoshi KanayaShigendo NishiKeiichi Akagawa
    • G02B6/26
    • G01D5/35345G01D5/342
    • A waveguide type optical device performs such monitoring as detection of a relative position of an insert plate to a groove. The waveguide type optical device comprises a groove disposed at an intersection position of a first optical waveguide and a second optical waveguide; an insert plate disposed to be insertable into the groove; means for applying a static magnetic field such that a vector product of a velocity vector (A) of the insert plate and its magnetic field vector (B) is nonzero; a cantilever that has electrical wiring including therein a wiring part lying in a direction perpendicular to both the velocity vector and the magnetic field vector and that supports the insert plate; and means for detecting a relative position of the insert plate to the groove by detecting a current induced in the electrical wiring.
    • 波导型光学器件执行诸如检测插入板相对于凹槽的相对位置的监视。 波导型光学器件包括设置在第一光波导和第二光波导的交叉位置处的槽; 插入板,其设置成可插入到所述凹槽中; 用于施加静态磁场的装置,使得插入板的速度矢量(A)和其磁场矢量(B)的矢量积不为零; 具有电线的悬臂,其中包括布置部分,所述布线部分位于垂直于所述速度矢量和所述磁场矢量的方向上并且支撑所述插入板; 以及用于通过检测在所述电线中感应出的电流来检测所述插入板到所述凹槽的相对位置的装置。
    • 6. 发明申请
    • Microactuator device and optical switching system using the same
    • 微致动器装置和使用其的光开关系统
    • US20050213878A1
    • 2005-09-29
    • US11099253
    • 2005-04-04
    • Keiichi AkagawaYoshihiko SuzukiKatsuhiko KurumadaToshiaki TamamuraMasatoshi Kanaya
    • Keiichi AkagawaYoshihiko SuzukiKatsuhiko KurumadaToshiaki TamamuraMasatoshi Kanaya
    • B81B3/00B81B7/04G01P15/125G02B6/26G02B6/35G02B6/42G02B26/08G02F1/09H02K33/18H02K41/035
    • G02B6/358G02B6/3516G02B6/3546G02B6/357G02B6/3572G02B6/3584G02B26/0858H02K33/18H02K41/0354
    • A movable plate 21 is fastened to a substrate 11 via flexure parts 27a and 27b, and can move upward and downward with respect to the substrate 11. The substrate 11 also serves as a fixed electrode. The movable plate 21 has second electrode parts 23a and 23b which can generate an electrostatic force between these electrode parts and the substrate 11 by means of a voltage that is applied across these electrode parts and the substrate 11, and a current path 25 which is disposed in a magnetic field, and which generates a Lorentz force when powered. A mirror 12 which advances into and withdraws from the optical path is disposed on the movable plate 21. When the movable plate 21 is caused to move from the lower position in which the electrostatic force is increased to the upper position, the control part controls the current so that the Lorentz force is generated in a downward orientation and gradually decreases while the movable plate 21 is moving from an intermediate position to the upper position. As a result, the mobility range of the movable part can be expanded without applying a high voltage or sacrificing compact size, and the power consumption can be reduced; furthermore, the reliability in the case of long-term operation can be increased.
    • 可移动板21通过挠曲部件27a和27b固定到基板11上,并且可相对于基板11上下移动。 基板11也用作固定电极。 可移动板21具有第二电极部分23a和23b,其可以通过施加在这些电极部分和基板11上的电压而在这些电极部分和基板11之间产生静电力,以及电流通路25, 被设置在磁场中,并且当通电时产生洛伦兹力。 在可动板21上设置有从光路前进和退出的反射镜12。 当可动板21从静电力增加的下部位置移动到上部位置时,控制部分控制电流,使得向下方向产生洛伦兹力并逐渐减小,而可动板21 从中间位置移动到上位置。 结果,可以在不施加高电压或牺牲紧凑尺寸的情况下扩大可移动部件的移动范围,并且可以降低功耗; 此外,可以增加长期运行情况下的可靠性。
    • 10. 发明授权
    • Method of manufacturing a FET device disposed in a compound s/c layer on
a semi-insulating substrate
    • 制造设置在半绝缘基板上的复合s / c层中的FET器件的方法
    • US4327475A
    • 1982-05-04
    • US161781
    • 1980-06-23
    • Kazuyoshi AsaiYasunobu IshiiKatsuhiko Kurumada
    • Kazuyoshi AsaiYasunobu IshiiKatsuhiko Kurumada
    • H01L29/80H01L21/337H01L29/808H01L21/26H01L27/14H01L29/205H01L29/78
    • H01L29/808
    • A method of manufacturing a field effect transistor uses a semiinsulating substrate consisting of a compound semiconductor, and an N type semiconductor layer formed on the substrate. The method comprises the steps of implanting ions of a P type impurity from the main surface of said semiconductor layer to form at least two P type gate regions which extend from the main surface to substantially reach said substrate and are disposed with a predetermined interval, and sintering metallic layers on the gate regions in ohmic contact and on opposite sides of the semiconductor layers with said semiconductor gate regions being interposed therebetween to form a gate, a source and a drain electrodes. Said implantation step further comprises a step of positioning at least two of said gate regions such that said gate regions come in contact with the boundary region of the transistor to be constructed.The method of manufacturing the field effect transistor is useful for fabricating the field effect transistor at a high yield which is suitable to assemble an integrated circuit.
    • 制造场效应晶体管的方法使用由化合物半导体构成的半绝缘基板和形成在基板上的N型半导体层。 该方法包括以下步骤:从所述半导体层的主表面注入P型杂质的离子,以形成从主表面延伸到基本上到达所述衬底并以预定间隔设置的至少两个P型栅区;以及 在欧姆接触的栅极区域和半导体层的相对侧上烧结金属层,其中所述半导体栅极区介于其间以形成栅极,源极和漏极。 所述注入步骤还包括定位至少两个所述栅极区域的步骤,使得所述栅极区域与待构造的晶体管的边界区域接触。 制造场效应晶体管的方法可用于以高产率制造适用于组装集成电路的场效应晶体管。