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1. 发明授权

US5265143A X-ray optical element including a multilayer coating 失效
标题翻译： X射线光学元件包括多层涂层
公开(公告)号：US5265143A
公开(公告)日：1993-11-23
申请号：US857
申请日：1993-01-05
申请人： Kathleen R. Early , Richard E. Howard , Donald M. Tennant , Warren K. Waskiewicz , David L. Windt
发明人： Kathleen R. Early , Richard E. Howard , Donald M. Tennant , Warren K. Waskiewicz , David L. Windt
IPC分类号： G01J1/04 , G02B5/08 , G21K1/06 , H01L21/308 , H01L21/312
CPC分类号： B82Y10/00 , G21K1/062 , G21K2201/061 , G21K2201/067
摘要： In one aspect, the invention involves an optical element in an x-ray imaging system. The element comprises a substrate overlain by a multilayer coating. The multilayer coating comprises plural first and at least second material layers in alternation. This coating is soluble in at least one etchant solution at an etching temperature less than 100.degree. C. The optical element further comprises a barrier layer intermediate the substrate and the multilayer coating. The barrier layer is relatively insoluble in the etchant solution at the etching temperature. In a second aspect of the invention, the optical element comprises a substrate and a multilayer coating as described above, and further comprises a release layer that underlies the multilayer coating. The release layer comprises a material that is relatively soluble in at least one etchant solution at an etching temperature less than 100.degree. C. In contrast to release layers of the prior art, the inventive release layer comprises germanium.
摘要翻译：在一个方面，本发明涉及x射线成像系统中的光学元件。元件包括由多层涂层覆盖的基底。多层涂层交替地包括多个第一和至少第二材料层。该涂层在小于100℃的蚀刻温度下可溶于至少一种蚀刻剂溶液。光学元件还包括位于基底和多层涂层之间的阻挡层。在蚀刻温度下，阻挡层相对不溶于蚀刻剂溶液。在本发明的第二方面，光学元件包括如上所述的基底和多层涂层，并且还包括在多层涂层下面的剥离层。剥离层包括在低于100℃的蚀刻温度下相对可溶于至少一种蚀刻剂溶液的材料。与现有技术的剥离层相反，本发明的剥离层包括锗。

2. 发明授权

US5356662A Method for repairing an optical element which includes a multilayer coating 失效
标题翻译：修复包括多层涂层的光学元件的方法
公开(公告)号：US5356662A
公开(公告)日：1994-10-18
申请号：US856
申请日：1993-01-05
申请人： Kathleen R. Early , Donald M. Tennant , Warren K. Waskiewicz , David L. Windt
发明人： Kathleen R. Early , Donald M. Tennant , Warren K. Waskiewicz , David L. Windt
IPC分类号： G02B5/08 , G03F1/24 , G03F1/72 , G21K1/06 , H01L21/308 , H01L21/312 , B32B35/00 , B05D5/06
CPC分类号： B82Y10/00 , B82Y40/00 , G03F1/24 , G03F1/72 , G21K1/062 , G21K2201/061 , G21K2201/067
摘要： The invention in one aspect involves a method for repairing an optical system. The optical system includes at least one optical element which comprises, in turn, a substrate having a principal surface, and a multilayer coating overlying the principal surface. The substrate comprises a first material, and the multilayer coating comprises plural second and at least third material layers in alternation. The method includes the steps of removing the multilayer coating from the substrate, and redepositing a new multilayer coating on the substrate. The old multilayer coating is removed in a single etching step while preserving the quality of the principal surface to such an extent that the peak reflectivity of the new multilayer coating is at least 80% the reflectivity of the old multilayer coating.In a second aspect, the invention involves a method for repairing an optical system of the kind described above, in which the optical element comprises a substrate having a principal surface, a layer of chromium overlying the principal surface, and a first layer of iridium overlying the chromium layer. The method comprises the steps of removing the first iridium layer from the substrate; and forming a second iridium coating on the substrate. The iridium layer is removed by exposing the iridium and chromium layers to an aqueous solution comprising potassium ferricyanide and sodium hydroxide, resulting in substantial dissolution of the chromium layer.
摘要翻译：本发明在一个方面涉及一种用于修复光学系统的方法。该光学系统包括至少一个光学元件，该光学元件又包括具有主表面的基底和覆盖在主表面上的多层涂层。所述基板包括第一材料，并且所述多层涂层交替地包括多个第二和至少第三材料层。该方法包括从衬底上去除多层涂层并将新的多层涂层重新沉积在衬底上的步骤。在单个蚀刻步骤中除去旧的多层涂层，同时保持主表面的质量，使得新的多层涂层的峰值反射率为旧多层涂层的反射率的至少80％。在第二方面，本发明涉及一种用于修复上述类型的光学系统的方法，其中光学元件包括具有主表面的基底，覆盖在主表面上的铬层和第一层铱覆盖层铬层。该方法包括从基板去除第一铱层的步骤; 以及在所述基底上形成第二铱涂层。通过将铱和铬层暴露于含有铁氰化钾和氢氧化钠的水溶液中来除去铱层，导致铬层的实质溶解。

3. 发明授权

US4344816A Selectively etched bodies 失效
标题翻译：选择性蚀刻的物体
公开(公告)号：US4344816A
公开(公告)日：1982-08-17
申请号：US218089
申请日：1980-12-19
申请人： Harold G. Craighead , Richard E. Howard , Donald M. Tennant
发明人： Harold G. Craighead , Richard E. Howard , Donald M. Tennant
IPC分类号： H01L21/302 , C23F4/00 , H01L21/3065 , C23F1/02
CPC分类号： C23F4/00 , Y10S428/929 , Y10T428/12431
摘要： Bodies having conical structures with dimensions on the order of the wavelength of visible light are prepared by a specific process. This process involves the formation of a mask by depositing a material that forms the mask onto the body to be etched and choosing the mask material so that it does not substantially wet the surface of the body. The mask thus fabricated has hill-type formations where the spacings between these formations are of the order of the wavelength of visible light. An etchant that etches the mask at a specific rate relative to the underlying body is then used to perform the etching procedure. Exemplary bodies produced by the procedure include tungsten textured bodies that exhibit light emissivities significantly higher than those possessed by the corresponding untreated tungsten material.
摘要翻译：通过特定的方法制备具有尺寸在可见光波长上的锥形结构的体。该方法涉及通过将形成掩模的材料沉积到待蚀刻的主体上并选择掩模材料以使其基本上不润湿身体表面来形成掩模。如此制造的掩模具有山形地层，其中这些地层之间的间距是可见光波长的数量级。然后使用以相对于下面的身体的特定速率蚀刻掩模的蚀刻剂来执行蚀刻过程。通过该方法产生的示例性物体包括显示比相应的未处理钨材料所具有的光发射率更高的光发射率的钨纹理体。

4. 发明授权

US5413884A Grating fabrication using electron beam lithography 失效
标题翻译：使用电子束光刻的光栅制作
公开(公告)号：US5413884A
公开(公告)日：1995-05-09
申请号：US989690
申请日：1992-12-14
申请人： Thomas L. Koch , Frederick W. Ostermayer, Jr. , Donald M. Tennant , Jean-Marc Verdiell
发明人： Thomas L. Koch , Frederick W. Ostermayer, Jr. , Donald M. Tennant , Jean-Marc Verdiell
IPC分类号： G02B5/18 , G02B6/12 , G02B6/122 , G02B6/124 , G03F7/00 , G03F7/20 , G03F9/00
CPC分类号： G03F7/7035 , G02B6/12007 , G02B6/124 , G03F7/001 , G03F7/2059 , G03F7/704
摘要： A technique is disclosed for utilizing direct-write electron-beam photolithography and holographic optical exposure to form gratings in optoelectronic structures. The direct-write e-beam process is used to form rectangular grating teeth in a mask substrate, where the mask is then used as a phase mask to transfer the pattern to the optoelectronic device. Advantageously, the utilization of a direct write e-beam technique to form the grating pattern on the photomask allows for the formation of any desired number and location of abrupt phase shifts, multiple grating pitches, alignment fiducials, and any other desired features. Therefore, a single exposure of the direct write e-beam mask allows for a plurality of different grating patterns to be simultaneously printed.
摘要翻译：公开了一种利用直写式电子束光刻和全息光学曝光在光电结构中形成光栅的技术。直接写入电子束处理用于在掩模衬底中形成矩形光栅齿，其中掩模然后用作相位掩模以将图案转移到光电子器件。有利地，利用直接写入电子束技术在光掩模上形成光栅图案允许形成任何期望数量和位置的突变相移，多个光栅间距，对准基准以及任何其它期望的特征。因此，直接写入电子束掩模的单次曝光允许同时打印多个不同的光栅图案。

5. 发明授权

US5510230A Device fabrication using DUV/EUV pattern delineation 失效
标题翻译：使用DUV / EUV图案描述的器件制造
公开(公告)号：US5510230A
公开(公告)日：1996-04-23
申请号：US326444
申请日：1994-10-20
申请人： Donald M. Tennant , Donald L. White , Obert R. Wood, II
发明人： Donald M. Tennant , Donald L. White , Obert R. Wood, II
IPC分类号： G03F1/24 , G03F1/32 , G03F7/20 , H01L21/027
CPC分类号： G03F1/32 , B82Y10/00 , B82Y40/00 , G03F1/24 , G03F7/70058 , G03F7/70233
摘要： The fabrication of integrated circuit devices built to design rules of 0.18 .mu.m and below uses patterning radiation in the EUV spectrum. Optimized processing conditions take advantage of independently developed EUV characteristics such as short resist absorption lengths.
摘要翻译：用于设计0.18μm及以下的规格的集成电路器件的制造使用EUV光谱中的图案化辐射。优化的加工条件利用独立开发的EUV特性，例如短的抗蚀剂吸收长度。

6. 发明授权

US5521031A Pattern delineating apparatus for use in the EUV spectrum 失效
标题翻译：用于EUV频谱的图案描绘装置
公开(公告)号：US5521031A
公开(公告)日：1996-05-28
申请号：US326449
申请日：1994-10-20
申请人： Donald M. Tennant , Donald L. White , Obert R. Wood, II
发明人： Donald M. Tennant , Donald L. White , Obert R. Wood, II
IPC分类号： G21K5/02 , G03F1/24 , G03F1/26 , G03F1/32 , H01L21/027 , G03F9/00
CPC分类号： B82Y10/00 , B82Y40/00 , G03F1/24 , G03F1/32 , G03F1/26
摘要： The operating principle of the attenuated phase mask is incorporated in a reflecting structure for use with extreme ultraviolet radiation. A working projection-reduction system for use with 0.18 .mu.m and smaller features combines the mask with all-reflecting optics.
摘要翻译：衰减相位掩模的工作原理结合在用于极紫外辐射的反射结构中。使用0.18μm及更小功能的工作投影减少系统将面罩与全反射光学组合。

7. 发明授权

US5304437A Mask for x-ray pattern delineation 失效
标题翻译：面罩用于x线图案描绘
公开(公告)号：US5304437A
公开(公告)日：1994-04-19
申请号：US862684
申请日：1992-04-03
申请人： Donald M. Tennant
发明人： Donald M. Tennant
IPC分类号： G03F1/24 , G03F1/72 , H01L21/027 , G03F9/00
CPC分类号： B82Y10/00 , B82Y40/00 , G03F1/24 , G03F1/72
摘要： Fabrication of reflective masks, designed for use with x-ray delineating radiation in the construction of sub-micron devices, is expedited by use of a barrier layer intermediate the multilayer reflector and the absorber layer. The barrier is designed to reduce damage to the multilayer reflector during two stages of fabrication--during initial patterning and during subtractive or additive mask repair. Composition of the barrier is so chosen as to minimize such damage during its removal in baring of the reflector, and also as to have requisite stability in regions retained during mask life.
摘要翻译：通过使用多层反射器和吸收层之间的阻挡层，加速设计用于亚微米器件结构中的x射线描绘辐射的反射掩模的制造。屏障被设计为在初始图案化期间和在减去或添加掩模修复期间在两个制造阶段减少多层反射器的损坏。屏障的组成是如此选择的，以便在其在反射器的裸露中移除期间使这种损伤最小化，以及在掩模寿命期间保持的区域中具有必要的稳定性。

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