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1. 发明授权

US5158645A Method of external circuitization of a circuit panel 失效
标题翻译：电路板外部电路化方法
公开(公告)号：US5158645A
公开(公告)日：1992-10-27
申请号：US754106
申请日：1991-09-03
申请人： Kathleen L. Covert , Charles C. Emmons , Elizabeth Foster , Richard W. Malek , Voya R. Markovich , Stephen L. Tisdale , Charyl L. Tytran
发明人： Kathleen L. Covert , Charles C. Emmons , Elizabeth Foster , Richard W. Malek , Voya R. Markovich , Stephen L. Tisdale , Charyl L. Tytran
IPC分类号： H05K3/00 , H05K3/10 , H05K3/18 , H05K3/38 , H05K3/42
CPC分类号： H05K3/427 , H05K3/0047 , H05K3/426 , H05K2203/0796 , H05K2203/1388 , H05K2203/1407 , H05K3/0055 , H05K3/108 , H05K3/181 , H05K3/184 , H05K3/389
摘要： A strippable thin film of Cu is applied above the surface features of a microelectronic circuit package to protect the features during mechanical working, for example drilling, the panel. The thin film is then stripped off of the panel. The thin film may be stripped off of the panel either prior to or after circuitization.
摘要翻译：在微电子电路封装的表面特征之上施加Cu的可剥离薄膜，以在机械加工（例如钻孔，面板）中保护特征。然后将薄膜从面板剥离。在电路之前或之后，薄膜可以从面板剥离。

2. 发明授权

US5035778A Regeneration of spent ferric chloride etchants 失效
标题翻译：废三氯化铁蚀刻剂的再生
公开(公告)号：US5035778A
公开(公告)日：1991-07-30
申请号：US350971
申请日：1989-05-12
申请人： Perminder Bindra , Kathleen L. Covert , David N. Light
发明人： Perminder Bindra , Kathleen L. Covert , David N. Light
IPC分类号： C23F1/46
CPC分类号： C23F1/46
摘要： Spent ferric chloride etching compositions are regenerated by electrolysis which includes introducing spent ferric chloride etching composition containing total iron content substantially equal to the original total iron content of fresh etching composition into the anode compartment of an electrolysis cell that contains an anode compartment, a cathode compartment, and an anion-exchange membrane separating the compartments, and applying voltage of +0.6 to +1.5 volts versus a saturated calomel electrode to the anode.

3. 发明授权

US06830627B1 Copper cleaning compositions, processes and products derived therefrom 失效
标题翻译：铜清洗组合物，由其衍生的工艺和产品
公开(公告)号：US06830627B1
公开(公告)日：2004-12-14
申请号：US09274935
申请日：1999-03-23
申请人： Kathleen L. Covert , John M. Lauffer , Peter A. Moschak
发明人： Kathleen L. Covert , John M. Lauffer , Peter A. Moschak
IPC分类号： B08B700
CPC分类号： C11D7/10 , C11D7/08 , C11D7/16 , C11D11/0047 , C23F1/18 , C23G1/103 , H05K1/167 , H05K3/383 , H05K2203/0796
摘要： The present invention is a persulfate microetchant composition especially useful for removing impurities from copper surfaces during fabrication of microelectronic packages. The microetchant formulation is characterized by its ability to selectively clean copper in the presence of nickel, nickel-phosphorous and noble metal alloys therefrom. Furthermore, no deleterious galvanic etching occurs in this microetchant-substrate system so that substantially no undercutting of the copper occurs. The combination of high selectivity and no undercutting allows for a simplification of the microelectronic fabrication process and significant improvements in the design features of the microelectronic package, in particular higher density circuits. The persulfate microetchant composition is stabilized with acid and phosphate salts to provide a process that is stable, fast acting, environmentally acceptable, has high capacity, and can be performed at room temperature. A preferred etchant composition is 100 gm/liter sodium persulfate, 3 volume % phosphoric acid and 0.058 molar sodium phosphate dibasic.
摘要翻译：本发明是一种特别适用于在制造微电子封装期间从铜表面去除杂质的过硫酸盐微蚀剂组合物。微蚀剂制剂的特征在于其在镍，镍 - 磷和贵金属合金存在下选择性地清洗铜的能力。此外，在该微蚀刻 - 衬底系统中不会发生有害的电偶蚀刻，因此基本上不会发生铜的底切。高选择性和无底切的组合允许微电子制造工艺的简化和微电子封装，特别是较高密度电路的设计特征的显着改进。过硫酸盐微提取剂组合物用酸和磷酸盐稳定，以提供稳定，快速作用，环境可接受，具有高容量的方法，并且可以在室温下进行。优选的蚀刻剂组合物为100g /升过硫酸钠，3体积％磷酸和0.058摩尔磷酸氢二钠。

4. 发明授权

US06521328B1 Copper etching compositions and products derived therefrom 有权
标题翻译：铜蚀刻组合物及其衍生物
公开(公告)号：US06521328B1
公开(公告)日：2003-02-18
申请号：US09654963
申请日：2000-09-05
申请人： John M. Lauffer , Kathleen L. Covert , Peter A. Moschak
发明人： John M. Lauffer , Kathleen L. Covert , Peter A. Moschak
IPC分类号： B32B300
CPC分类号： C23F1/18 , H05K3/067 , Y10S428/901 , Y10T428/24917
摘要： The present invention is a persulfate etchant composition especially useful for dissolving copper during fabrication of microelectronic packages. The etchant is characterized by its ability to selectively etch copper in the presence of nickel, nickel-phosphorous and noble metal alloys therefrom. Furthermore, no deleterious galvanic etching occurs in this etchant-substrate system so that substantially no undercutting of the copper occurs. The combination of high selectivity and no undercutting allows for a simplification of the microelectronic fabrication process and significant improvements in the design features of the microelectronic package, in particular higher density circuits. The persulfate etchant composition is stabilized with acid and phosphate salts to provide a process that is stable, fast acting, environmentally acceptable, has high capacity, and can be performed at room temperature. A preferred etchant composition is 230 gm/liter sodium persulfate, 3 volume % phosphoric acid and 0.058 molar sodium phosphate dibasic.
摘要翻译：本发明是在制造微电子封装期间特别可用于溶解铜的过硫酸盐蚀刻剂组合物。蚀刻剂的特征在于其能够在镍，镍 - 磷和贵金属合金存在下选择性地蚀刻铜。此外，在该蚀刻剂 - 衬底系统中不发生有害的电镀蚀刻，使得基本上不会发生铜的底切。高选择性和无底切的组合允许微电子制造工艺的简化和微电子封装，特别是较高密度电路的设计特征的显着改进。过硫酸盐蚀刻剂组合物用酸和磷酸盐稳定，以提供稳定，快速作用，环境可接受，具有高容量的方法，并且可以在室温下进行。优选的蚀刻剂组合物为230gm / l过硫酸钠，3体积％磷酸和0.058摩尔磷酸氢二钠。

5. 发明授权

US5773528A Dual cure epoxy backseal formulation 失效
公开(公告)号：US5773528A
公开(公告)日：1998-06-30
申请号：US618545
申请日：1996-03-19
申请人： Julio M. Alvarado , Kathleen L. Covert , Joseph P. Kuczynski
发明人： Julio M. Alvarado , Kathleen L. Covert , Joseph P. Kuczynski
IPC分类号： C08G59/18 , C08F2/46 , C08G59/00 , C08G59/24 , C08G59/62 , C08G59/68 , C08L63/00 , H01L23/14 , H01L23/29 , C08F20/00
CPC分类号： C08G59/245 , C08G59/62 , C08G59/68 , C08L63/00 , H01L23/145 , H01L23/293 , H01L2924/0002 , H01L2924/09701
摘要： A photocopolymerizable composition for backsealing a ceramic carrier and process for using the composition is disclosed. The composition comprises: a liquid, multifunctional, bisphenol based epoxy; a liquid, multifunctional hydroxyl containing organic material; a complex onium salt photoinitiator; and, a complex cupric salt initiator. The composition utilizes a strong Bronstead acid for additional deep curing created by iodonium salt thermolysis.

6. 发明授权

US5560840A Selective etching of nickle/iron alloys 失效
公开(公告)号：US5560840A
公开(公告)日：1996-10-01
申请号：US359218
申请日：1994-12-19
申请人： Kathleen L. Covert , Lisa J. Jimarez , Krystyna W. Semkow
发明人： Kathleen L. Covert , Lisa J. Jimarez , Krystyna W. Semkow
IPC分类号： C23F1/28 , C23F1/44 , H05K3/06 , H05K3/44 , C23F1/00
CPC分类号： C23F1/44 , C23F1/28 , H05K3/44 , H05K2201/0338 , H05K2203/0361 , H05K3/062 , H05K3/067
摘要： The present invention provides a novel method of etching nickle/iron alloy which employs a novel etchant. The novel etchant, which etches nickle/iron alloy but not copper, comprises an aqueous solution of ferric ammonium sulfate, and an acid selected from the group consisting of: sulfuric acid; phosphoric acid; and mixtures thereof.

7. 发明授权

US5221420A Etching method for increased circuitized line width and uniformity 失效
标题翻译：蚀刻方法增加了电路线宽和均匀性
公开(公告)号：US5221420A
公开(公告)日：1993-06-22
申请号：US912067
申请日：1992-07-08
申请人： Kathleen L. Covert , Jennette E. Kingsley , David N. Light , Richard A. Schumacher
发明人： Kathleen L. Covert , Jennette E. Kingsley , David N. Light , Richard A. Schumacher
IPC分类号： C23F1/02 , C23F1/08 , H01L21/48 , H05K3/06
CPC分类号： H01L21/4846 , C23F1/02 , C23F1/08 , H05K3/068 , H05K2203/1563
摘要： Disclosed is a method of fabricating a microelectronic package, especially a microelectronic package having copper circuitization on a dielectric substrate. The method includes depositing copper on opposite surfaces of the package, and then depositing resist atop the copper. The resist is patterned, e.g., by photolithography or screening so that intended circuitization traces are covered by the resist. The exposed copper is etched, and the resist is stripped off of the unexposed copper. The process is characterized in that the etchant is upwardly sprayed onto a downwardly facing first surface of the package for half of the etching cycle, and then the package is rotated so that etchant is upwardly sprayed onto the downwardly facing second surface of the package.
摘要翻译：公开了一种制造微电子封装的方法，特别是在电介质基片上具有铜电路化的微电子封装。该方法包括在封装的相对表面上沉积铜，然后在铜上沉积抗蚀剂。抗蚀剂被图案化，例如通过光刻或筛选，使得预期的电路迹线被抗蚀剂覆盖。暴露的铜被蚀刻，并且抗蚀剂被剥离未曝光的铜。该方法的特征在于，将蚀刻剂向上喷涂到包装的向下的第一表面上一半的蚀刻循环，然后旋转包装，使得蚀刻剂向上喷涂到包装的向下的第二表面上。

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