会员体验
专利管家(专利管理)
工作空间(专利管理)
风险监控(情报监控)
数据分析(专利分析)
侵权分析(诉讼无效)
联系我们
交流群
官方交流:
QQ群: 891211   
微信请扫码    >>>
现在联系顾问~
热词
    • 1. 发明申请
    • Nanotemplate arbitrary-imprint lithography
    • 纳米模板任意刻印光刻
    • US20100078854A1
    • 2010-04-01
    • US11542474
    • 2006-10-03
    • Karl K. BerggrenStefan HarrerGiovanni A. SalvatoreJoel K. Yang
    • Karl K. BerggrenStefan HarrerGiovanni A. SalvatoreJoel K. Yang
    • B29C59/02
    • G03F7/0002B82Y10/00B82Y40/00
    • In a method for imprinting a layer of material, a nanotemplate is impressed into a material layer, and the nanotemplate is maintained impressed in the material layer until a geometric trench corresponding to geometry of the nanotemplate is formed in the layer, and the nanotemplate is then removed from the material layer. A nanotemplate geometric trench is repeatedly formed in the material layer by nanotemplate impressions in the layer, until a final desired imprint pattern is produced in the layer. Each nanotemplate geometric trench is characterized by an extent that is a fraction of an extent of the final desired imprint pattern. The material layer is maintained in a condition for accepting nanotemplate impressions continuously throughout the nanotemplate impression repetition.
    • 在用于压印材料层的方法中,将纳米模板压入材料层中,并且将纳米模板保持印在材料层中,直到在层中形成对应于纳米模板的几何形状的几何沟槽,然后将纳米模板 从材料层中移除。 通过层中的纳米模板印模在材料层中重复地形成纳米模板几何沟槽,直到在该层中产生最终期望的压印图案。 每个纳米模板几何沟槽的特征在于最终所需压印图案的程度的一部分。 材料层保持在整个纳米模板印象重复中连续地接纳纳米模板印象的条件。
    • 2. 发明授权
    • Nanotemplate arbitrary-imprint lithography
    • 纳米模板任意刻印光刻
    • US08603381B2
    • 2013-12-10
    • US11542474
    • 2006-10-03
    • Karl K. BerggrenStefan HarrerGiovanni A. SalvatoreJoel K. Yang
    • Karl K. BerggrenStefan HarrerGiovanni A. SalvatoreJoel K. Yang
    • B28B3/00
    • G03F7/0002B82Y10/00B82Y40/00
    • In a method for imprinting a layer of material, a nanotemplate is impressed into a material layer, and the nanotemplate is maintained impressed in the material layer until a geometric trench corresponding to geometry of the nanotemplate is formed in the layer, and the nanotemplate is then removed from the material layer. A nanotemplate geometric trench is repeatedly formed in the material layer by nanotemplate impressions in the layer, until a final desired imprint pattern is produced in the layer. Each nanotemplate geometric trench is characterized by an extent that is a fraction of an extent of the final desired imprint pattern. The material layer is maintained in a condition for accepting nanotemplate impressions continuously throughout the nanotemplate impression repetition.
    • 在用于压印材料层的方法中,将纳米模板压入材料层中,并且将纳米模板保持印在材料层中,直到在层中形成对应于纳米模板的几何形状的几何沟槽,然后将纳米模板 从材料层中移除。 通过层中的纳米模板印模在材料层中重复地形成纳米模板几何沟槽,直到在该层中产生最终期望的压印图案。 每个纳米模板几何沟槽的特征在于最终所需压印图案的程度的一部分。 材料层保持在整个纳米模板印象重复中连续地接纳纳米模板印象的条件。