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1. 发明申请

US20050219786A1 Detachable electrostatic chuck 有权
标题翻译：可拆卸静电卡盘
公开(公告)号：US20050219786A1
公开(公告)日：2005-10-06
申请号：US10816152
申请日：2004-03-31
申请人： Karl Brown , Nora Arellano , Semyon Sherstinsky , Allen Lau , Cheng-Hsiung Tsai , Vineet Mehta , Steve Sansoni , Wei Wang
发明人： Karl Brown , Nora Arellano , Semyon Sherstinsky , Allen Lau , Cheng-Hsiung Tsai , Vineet Mehta , Steve Sansoni , Wei Wang
IPC分类号： H01H1/00 , H01L21/68 , H01L21/683
CPC分类号： H01L21/6831 , Y10T279/23
摘要： An electrostatic chuck is capable of attachment to a pedestal in a process chamber. The chuck has an electrostatic puck comprises a ceramic body with an embedded electrode. The ceramic body has a substrate support surface with an annular periphery. The chuck also has a base plate below the electrostatic puck that is a composite of a ceramic material and a metal. The base plate has an annular flange extending beyond the periphery of the ceramic body. The base plate and electrostatic puck can be supported by a support pedestal having a housing and an annular ledge that extends outwardly from the housing to attach to the annular flange of the base plate. A heat transfer plate having an embedded heat transfer fluid channel can also be provided.
摘要翻译：静电卡盘能够附着在处理室中的基座上。卡盘具有包括具有嵌入电极的陶瓷体的静电压盖。陶瓷体具有带有环形周边的基板支撑表面。卡盘还具有作为陶瓷材料和金属的复合材料的静电压盘下面的底板。基板具有延伸超过陶瓷体周边的环形凸缘。基板和静电圆盘可以由具有壳体的支撑基座支撑，并且环形凸缘从壳体向外延伸以附接到基板的环形凸缘。还可以提供具有嵌入式传热流体通道的传热板。

2. 发明授权

US07697260B2 Detachable electrostatic chuck 有权
标题翻译：可拆卸静电卡盘
公开(公告)号：US07697260B2
公开(公告)日：2010-04-13
申请号：US10816152
申请日：2004-03-31
申请人： Karl Brown , Nora Arellano , Semyon Sherstinsky , Allen Lau , Cheng-Hsiung Tsai , Vineet Mehta , Steve Sansoni , Wei W. Wang
发明人： Karl Brown , Nora Arellano , Semyon Sherstinsky , Allen Lau , Cheng-Hsiung Tsai , Vineet Mehta , Steve Sansoni , Wei W. Wang
IPC分类号： H01L21/683 , H01T23/00 , B23B31/28
CPC分类号： H01L21/6831 , Y10T279/23
摘要： An electrostatic chuck is capable of attachment to a pedestal in a process chamber. The chuck has an electrostatic puck comprises a ceramic body with an embedded electrode. The ceramic body has a substrate support surface with an annular periphery. The chuck also has a base plate below the electrostatic puck that is a composite of a ceramic material and a metal. The base plate has an annular flange extending beyond the periphery of the ceramic body. The base plate and electrostatic puck can be supported by a support pedestal having a housing and an annular ledge that extends outwardly from the housing to attach to the annular flange of the base plate. A heat transfer plate having an embedded heat transfer fluid channel can also be provided.
摘要翻译：静电卡盘能够附着在处理室中的基座上。卡盘具有包括具有嵌入电极的陶瓷体的静电压盖。陶瓷体具有带有环形周边的基板支撑表面。卡盘还具有作为陶瓷材料和金属的复合材料的静电压盘下面的底板。基板具有延伸超过陶瓷体周边的环形凸缘。基板和静电圆盘可以由具有壳体的支撑基座支撑，并且环形凸缘从壳体向外延伸以附接到基板的环形凸缘。还可以提供具有嵌入式传热流体通道的传热板。

3. 发明申请

US20060002053A1 Detachable electrostatic chuck for supporting a substrate in a process chamber 有权
公开(公告)号：US20060002053A1
公开(公告)日：2006-01-05
申请号：US11221169
申请日：2005-09-07
申请人： Karl Brown , Semyon Sherstinsky , Wei Wang , Cheng-Hsiung Tsai , Vineet Mehta , Allen Lau , Steve Sansoni
发明人： Karl Brown , Semyon Sherstinsky , Wei Wang , Cheng-Hsiung Tsai , Vineet Mehta , Allen Lau , Steve Sansoni
IPC分类号： H01T23/00
CPC分类号： H01L21/6831 , Y10T279/23
摘要： A detachable electrostatic chuck can be attached to a pedestal in a process chamber. The electrostatic chuck has an electrostatic puck comprising a dielectric covering at least one electrode and a frontside surface to receive a substrate. A backside surface of the chuck has a central protrusion that can be a D-shaped mesa to facilitate alignment with a mating cavity in the pedestal. The protrusion can also have asymmetrically offset apertures, which further assist alignment, and also serve to receive electrode terminal posts and a gas tube. A heat transfer plate having an embedded heat transfer fluid channel is spring loaded on the pedestal to press against the chuck for good heat transfer.

4. 发明授权

US07480129B2 Detachable electrostatic chuck for supporting a substrate in a process chamber 有权
标题翻译：用于在处理室中支撑基板的可拆卸静电卡盘
公开(公告)号：US07480129B2
公开(公告)日：2009-01-20
申请号：US11221169
申请日：2005-09-07
申请人： Karl Brown , Semyon Sherstinsky , Wei W. Wang , Cheng-Hsiung Tsai , Vineet Mehta , Allen Lau , Steve Sansoni
发明人： Karl Brown , Semyon Sherstinsky , Wei W. Wang , Cheng-Hsiung Tsai , Vineet Mehta , Allen Lau , Steve Sansoni
IPC分类号： H01L21/683
CPC分类号： H01L21/6831 , Y10T279/23
摘要： A detachable electrostatic chuck can be attached to a pedestal in a process chamber. The electrostatic chuck has an electrostatic puck comprising a dielectric covering at least one electrode and a frontside surface to receive a substrate. A backside surface of the chuck has a central protrusion that can be a D-shaped mesa to facilitate alignment with a mating cavity in the pedestal. The protrusion can also have asymmetrically offset apertures, which further assist alignment, and also serve to receive electrode terminal posts and a gas tube. A heat transfer plate having an embedded heat transfer fluid channel is spring loaded on the pedestal to press against the chuck for good heat transfer.
摘要翻译：可拆卸的静电卡盘可以附接到处理室中的基座。静电吸盘具有包括覆盖至少一个电极和前侧表面的电介质的静电压盘，用于接收衬底。卡盘的背面具有可以是D形台面的中心突起，以便于与基座中的配合腔体对准。突起还可以具有不对称偏移的孔，其进一步辅助对准，并且还用于接收电极端子柱和气体管。具有嵌入式传热流体通道的传热板弹簧加载在基座上以压靠卡盘以获得良好的热传递。

5. 发明授权

US07907384B2 Detachable electrostatic chuck for supporting a substrate in a process chamber 有权
标题翻译：用于在处理室中支撑基板的可拆卸静电卡盘
公开(公告)号：US07907384B2
公开(公告)日：2011-03-15
申请号：US12315679
申请日：2008-12-04
申请人： Karl Brown , Semyon Sherstinsky , Wei W. Wang , Cheng-Hsiung Tsai , Vineet Mehta , Allen Lau , Steve Sansoni
发明人： Karl Brown , Semyon Sherstinsky , Wei W. Wang , Cheng-Hsiung Tsai , Vineet Mehta , Allen Lau , Steve Sansoni
IPC分类号： H01L21/68 , H01L21/683
CPC分类号： H01L21/6831 , Y10T279/23
摘要： A substrate support has an electrostatic chuck comprising an electrostatic puck with a dielectric covering an electrode capable of being charged to energize a process gas. The chuck has a frontside surface to receive a substrate and a base plate having an annular flange. A spring loaded heat transfer plate contacts the base plate, and has a fluid channel comprising first and second spiral channels. A pedestal is below the heat transfer plate.
摘要翻译：基板支撑件具有静电卡盘，该静电卡盘包括具有电介质的静电托盘，该电介质覆盖能够被加电以对加工气体通电的电极。卡盘具有用于接收基板的前侧表面和具有环形凸缘的基板。弹簧加载的传热板接触基板，并且具有包括第一和第二螺旋通道的流体通道。底座位于传热板的下方。

6. 发明申请

US20090201622A1 Detachable electrostatic chuck for supporting a substrate in a process chamber 有权
标题翻译：用于在处理室中支撑基板的可拆卸静电卡盘
公开(公告)号：US20090201622A1
公开(公告)日：2009-08-13
申请号：US12315679
申请日：2008-12-04
申请人： Karl Brown , Semyon Sherstinsky , Wei W. Wang , Cheng-Hsiung Tsai , Vineet Mehta , Allen Lau , Steve Sansoni
发明人： Karl Brown , Semyon Sherstinsky , Wei W. Wang , Cheng-Hsiung Tsai , Vineet Mehta , Allen Lau , Steve Sansoni
IPC分类号： H01L21/683
CPC分类号： H01L21/6831 , Y10T279/23
摘要： A substrate support has an electrostatic chuck comprising an electrostatic puck with a dielectric covering an electrode capable of being charged to energize a process gas. The chuck has a frontside surface to receive a substrate and a base plate having an annular flange. A spring loaded heat transfer plate contacts the base plate, and has a fluid channel comprising first and second spiral channels. A pedestal is below the heat transfer plate.
摘要翻译：基板支撑件具有静电卡盘，该静电卡盘包括具有电介质的静电托盘，该电介质覆盖能够被加电以对加工气体通电的电极。卡盘具有用于接收基板的前侧表面和具有环形凸缘的基板。弹簧加载的传热板接触基板，并且具有包括第一和第二螺旋通道的流体通道。底座位于传热板的下方。

7. 发明授权

US06563686B2 Pedestal assembly with enhanced thermal conductivity 有权
公开(公告)号：US06563686B2
公开(公告)日：2003-05-13
申请号：US09812287
申请日：2001-03-19
申请人： Cheng-Hsiung Tsai , Karl Brown , Thomas Brezoczky
发明人： Cheng-Hsiung Tsai , Karl Brown , Thomas Brezoczky
IPC分类号： H05E2300
CPC分类号： H01L21/68785 , C23C16/4586 , H01L21/67103 , H01L21/67109 , H01L21/6831 , Y10T29/41
摘要： A pedestal assembly for supporting a substrate within a semiconductor process chamber is provided. In one embodiment, the pedestal assembly generally includes a ceramic body, a metallic housing and a cooling plate. The ceramic body is coupled to the housing and is adapted to support the substrate. The cooling plate is disposed against the ceramic body. A conformal graphite interstitial layer disposed between the cooling plate and the ceramic body to provide enhanced thermal conductivity therebetween over a thermal operating range of the pedestal assembly. In another embodiment, a pedestal assembly generally includes a removable ceramic body disposed on a cover. A conformal graphite interstitial layer disposed in a vacuum environment surrounding the pedestal assembly between the ceramic body and the cover. Optionally, a second conformal graphite interstitial layer disposed in an internal volume of the pedestal assembly between the cooling plate and the cover.

8. 发明申请

US20160293798A1 PVD BUFFER LAYERS FOR LED FABRICATION 审中-公开
公开(公告)号：US20160293798A1
公开(公告)日：2016-10-06
申请号：US15183594
申请日：2016-06-15
申请人： Mingwei Zhu , Rongjun Wang , Nag B. Patibandla , Xianmin Tang , Vivek Agrawal , Cheng-Hsiung Tsai , Muhammad Rasheed , Dinesh Saigal , Praburam Gopal Raja , Omkaram Nalamasu , Anantha Subramani
发明人： Mingwei Zhu , Rongjun Wang , Nag B. Patibandla , Xianmin Tang , Vivek Agrawal , Cheng-Hsiung Tsai , Muhammad Rasheed , Dinesh Saigal , Praburam Gopal Raja , Omkaram Nalamasu , Anantha Subramani
IPC分类号： H01L33/12 , H01L33/32 , H01L33/00 , H01L33/06
CPC分类号： H01L33/12 , C30B23/02 , C30B29/403 , H01L21/0237 , H01L21/02439 , H01L21/02458 , H01L21/02502 , H01L21/0254 , H01L21/02631 , H01L21/02661 , H01L29/205 , H01L33/007 , H01L33/06 , H01L33/32
摘要： Fabrication of gallium nitride-based light devices with physical vapor deposition (PVD)-formed aluminum nitride buffer layers is described. Process conditions for a PVD AlN buffer layer are also described. Substrate pretreatments for a PVD aluminum nitride buffer layer are also described. In an example, a method of fabricating a buffer layer above a substrate involves pre-treating a surface of a substrate. The method also involves, subsequently, reactive sputtering an aluminum nitride (AlN) layer on the surface of the substrate from an aluminum-containing target housed in a physical vapor deposition (PVD) chamber with a nitrogen-based gas or plasma.

9. 发明申请

US20140017894A1 Methods of Manufacturing Semiconductor Devices 有权
标题翻译：制造半导体器件的方法
公开(公告)号：US20140017894A1
公开(公告)日：2014-01-16
申请号：US13546800
申请日：2012-07-11
申请人： Cheng-Hsiung Tsai , Chung-Ju Lee , Hsin-Chieh Yao , Tien-I Bao
发明人： Cheng-Hsiung Tsai , Chung-Ju Lee , Hsin-Chieh Yao , Tien-I Bao
IPC分类号： H01L21/311
CPC分类号： H01L21/0337 , H01L21/02115 , H01L21/31144 , H01L21/76816
摘要： Methods of manufacturing semiconductor devices are disclosed. In one embodiment, a material layer is formed over a workpiece. The workpiece includes a first portion, a second portion, and a hard mask disposed between the first portion and the second portion. The material layer is patterned, and first spacers are formed on sidewalls of the patterned material layer. The patterned material layer is removed, and the second portion of the workpiece is patterned using the first spacers as an etch mask. The first spacers are removed, and second spacers are formed on sidewalls of the patterned second portion of the workpiece. The patterned second portion of the workpiece is removed, and the hard mask of the workpiece is patterned using the second spacers as an etch mask. The first portion of the workpiece is patterned using the hard mask as an etch mask.
摘要翻译：公开了制造半导体器件的方法。在一个实施例中，材料层形成在工件上。工件包括设置在第一部分和第二部分之间的第一部分，第二部分和硬掩模。图案化材料层，并且在图案化材料层的侧壁上形成第一间隔物。去除图案化的材料层，并且使用第一间隔件作为蚀刻掩模来对工件的第二部分进行图案化。去除第一间隔物，并且在工件的图案化第二部分的侧壁上形成第二间隔物。去除工件的图案化的第二部分，并且使用第二间隔件作为蚀刻掩模来对工件的硬掩模进行图案化。使用硬掩模作为蚀刻掩模来对工件的第一部分进行图案化。

10. 发明申请

US20130285065A1 PVD BUFFER LAYERS FOR LED FABRICATION 有权
标题翻译：用于LED制造的PVD缓冲层
公开(公告)号：US20130285065A1
公开(公告)日：2013-10-31
申请号：US13868385
申请日：2013-04-23
申请人： Mingwei Zhu , Rongjun Wang , Nag B. Patibandla , Xianmin Tang , Vivek Agrawal , Cheng-Hsiung Tsai , Muhammad Rasheed , Dinesh Saigal , Praburam Gopal Raja , Omkaram Nalamasu , Anantha Subramani
发明人： Mingwei Zhu , Rongjun Wang , Nag B. Patibandla , Xianmin Tang , Vivek Agrawal , Cheng-Hsiung Tsai , Muhammad Rasheed , Dinesh Saigal , Praburam Gopal Raja , Omkaram Nalamasu , Anantha Subramani
IPC分类号： H01L21/02 , H01L29/205
CPC分类号： H01L33/12 , C30B23/02 , C30B29/403 , H01L21/0237 , H01L21/02439 , H01L21/02458 , H01L21/02502 , H01L21/0254 , H01L21/02631 , H01L21/02661 , H01L29/205 , H01L33/007 , H01L33/06 , H01L33/32
摘要： Fabrication of gallium nitride-based light devices with physical vapor deposition (PVD)-formed aluminum nitride buffer layers is described. Process conditions for a PVD AlN buffer layer are also described. Substrate pretreatments for a PVD aluminum nitride buffer layer are also described. In an example, a method of fabricating a buffer layer above a substrate involves pre-treating a surface of a substrate. The method also involves, subsequently, reactive sputtering an aluminum nitride (AlN) layer on the surface of the substrate from an aluminum-containing target housed in a physical vapor deposition (PVD) chamber with a nitrogen-based gas or plasma.
摘要翻译：描述了具有物理气相沉积（PVD）形成的氮化铝缓冲层的氮化镓基光器件的制造。还描述了PVD AlN缓冲层的工艺条件。还描述了PVD氮化铝缓冲层的基板预处理。在一个实例中，在衬底上制造缓冲层的方法包括预处理衬底的表面。该方法还涉及从容纳在具有氮基气体或等离子体的物理气相沉积（PVD）室中的含铝靶反应溅射基板表面上的氮化铝（AlN）层。

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