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1. 发明授权

US06572453B1 Multi-fluid polishing process 失效
标题翻译：多流体抛光工艺
公开(公告)号：US06572453B1
公开(公告)日：2003-06-03
申请号：US09575218
申请日：2000-05-18
申请人： Kapila Wijekoon , Stan D. Tsai , Yuchun Wang , Doyle E. Bennett , Fred C. Redeker , Madhavi Chandrachood , Brian J. Brown
发明人： Kapila Wijekoon , Stan D. Tsai , Yuchun Wang , Doyle E. Bennett , Fred C. Redeker , Madhavi Chandrachood , Brian J. Brown
IPC分类号： B24B100
CPC分类号： B24B37/04 , B08B1/04 , B24B57/02 , C11D7/06 , C11D7/08 , C11D7/265 , C11D7/3209 , C11D11/0047 , H01L21/3212
摘要： A polishing method is provided which simultaneously supplies both a polishing fluid and a conditioning fluid to a polishing pad, while a substrate is in moving contact with the polishing pad.
摘要翻译：提供了一种抛光方法，其同时将抛光液和调理流体同时供应到抛光垫，同时衬底与抛光垫移动接触。

2. 发明授权

US06921494B2 Backside etching in a scrubber 失效
标题翻译：洗涤器中的背面蚀刻
公开(公告)号：US06921494B2
公开(公告)日：2005-07-26
申请号：US10456723
申请日：2003-06-06
申请人： Brian J. Brown , Madhavi Chandrachood , Radha Nayak , Fred C. Redeker , Michael Sugarman , John M. White
发明人： Brian J. Brown , Madhavi Chandrachood , Radha Nayak , Fred C. Redeker , Michael Sugarman , John M. White
IPC分类号： B08B1/04 , B08B3/02 , B08B3/08 , B08B7/04 , H01L21/00 , H01L21/304 , H01L21/306 , B44C1/22 , C03C15/00 , C03C25/68 , C23F1/00
CPC分类号： H01L21/6708 , H01L21/67075 , Y10S134/902
摘要： A scrubber device is provided. The scrubber device may etch a backside of a wafer and may clean a frontside of the wafer simultaneously. The scrubber device may comprise a programmed controller adapted to supply a non-etching fluid to a frontside of the wafer whenever an etching fluid is supplied to the backside of the wafer.
摘要翻译：提供洗涤器装置。洗涤器装置可以蚀刻晶片的背面并且可以同时清洁晶片的前侧。洗涤器装置可以包括编程控制器，其适用于每当将蚀刻流体供应到晶片的背面时，将非蚀刻流体提供给晶片的前侧。

3. 发明授权

US07104267B2 Planarized copper cleaning for reduced defects 失效
标题翻译：平面化铜清洁减少缺陷
公开(公告)号：US07104267B2
公开(公告)日：2006-09-12
申请号：US09727133
申请日：2000-11-29
申请人： Ramin Emami , Shijian Li , Sen-Hou Ko , Fred C. Redeker , Madhavi Chandrachood
发明人： Ramin Emami , Shijian Li , Sen-Hou Ko , Fred C. Redeker , Madhavi Chandrachood
IPC分类号： H01L21/302
CPC分类号： H01L21/02074 , H01L21/3212 , H01L21/7684
摘要： A process for treating a copper or copper alloy substrate surface with a composition and corrosion inhibitor solution to minimize defect formation and surface corrosion, the method including applying a composition including one or more chelating agents, a pH adjusting agent to produce a pH between about 3 and about 11, and deionized water, and then applying a corrosion inhibitor solution. The composition may further comprise a reducing agent and/or corrosion inhibitor. The method may further comprise applying the corrosion inhibitor solution prior to treating the substrate surface with the composition.
摘要翻译：一种用组合物和腐蚀抑制剂溶液处理铜或铜合金基材表面以最小化缺陷形成和表面腐蚀的方法，该方法包括施加包含一种或多种螯合剂的组合物，pH调节剂以产生约3 约11，去离子水，然后涂上缓蚀剂溶液。组合物还可以包含还原剂和/或缓蚀剂。该方法还可以包括在用组合物处理基材表面之前施加腐蚀抑制剂溶液。

4. 发明授权

US06432826B1 Planarized Cu cleaning for reduced defects 失效
标题翻译：平面化的Cu清洁，减少缺陷
公开(公告)号：US06432826B1
公开(公告)日：2002-08-13
申请号：US09450479
申请日：1999-11-29
申请人： Ramin Emami , Shijian Li , Sen-Hou Ko , Fred C. Redeker , Madhavi Chandrachood
发明人： Ramin Emami , Shijian Li , Sen-Hou Ko , Fred C. Redeker , Madhavi Chandrachood
IPC分类号： H01L21302
CPC分类号： H01L21/02074 , H01L21/3212 , H01L21/7684
摘要： Cu metallization is treated to reduce defects and effect passivation by removing a thin surface layer or removing corrosion stains, subsequent to CMP and barrier layer removal, employing a cleaning composition comprising deionized water, an acid and ammonium hydroxide and/or an amine. Embodiments include removing up to about 100 Å of the Cu metallization surface in a damascene opening by sequentially treating the exposed Cu surface with: an optional corrosion inhibitor; a solution having a pH of about 4 to about 11 and containing an acid, ammonium hydroxide and/or an amine, and deionized water; and a corrosion inhibitor.
摘要翻译：通过使用包含去离子水，酸和氢氧化铵和/或胺的清洁组合物，在CMP和阻隔层去除之后，通过去除薄的表面层或去除腐蚀污渍来处理Cu金属化以减少缺陷并实现钝化。实施例包括通过用任意的腐蚀抑制剂依次处理暴露的Cu表面，在镶嵌开口中去除多达约100埃的Cu金属化表面; pH为约4至约11并含有酸，氢氧化铵和/或胺的溶液和去离子水; 和腐蚀抑制剂。

5. 发明授权

US06371836B1 Groove cleaning device for chemical-mechanical polishing 失效
标题翻译：用于化学机械抛光的槽清洁装置
公开(公告)号：US06371836B1
公开(公告)日：2002-04-16
申请号：US09666511
申请日：2000-09-20
申请人： Brian J. Brown , Robert Tolles , James C. Nystrom , Doyle Bennett , Madhavi Chandrachood
发明人： Brian J. Brown , Robert Tolles , James C. Nystrom , Doyle Bennett , Madhavi Chandrachood
IPC分类号： B24B100
CPC分类号： B24B53/017 , B24B37/26
摘要： An improved chemical-mechanical polishing method and apparatus is provided. A brush is employed to continually brush slurry particles from surface features, e.g., grooves, on a polishing pad. In this manner slurry is prevented from becoming compacted within the grooves as the slurry passes beneath and is subjected to compressive forces of a wafer polishing head. The invention may be practiced by use of a stationary brush operatively coupled to the polishing pad surface, or by an improved conditioning assembly having both a diamond surface for conditioning the polishing pad and a brush for cleaning the pad's surface features. The brush portion of the conditioning assembly may or may not rotate as it is scanned across the surface of the polishing pad.
摘要翻译：提供了改进的化学机械抛光方法和装置。使用刷子来持续地从抛光垫上的表面特征（例如凹槽）刷洗浆料颗粒。以这种方式，当浆料通过下方并且经受晶片抛光头的压缩力时，防止浆料在凹槽内变得压实。本发明可以通过使用可操作地耦合到抛光垫表面的固定刷或者通过改进的调节组件来实现，该调节组件具有用于调节抛光垫的金刚石表面和用于清洁垫的表面特征的刷子。当调整组件的刷部分扫过抛光垫的表面时，调节组件的刷部分可以或可以不旋转。

6. 发明授权

US6135868A Groove cleaning device for chemical-mechanical polishing 失效
公开(公告)号：US6135868A
公开(公告)日：2000-10-24
申请号：US21765
申请日：1998-02-11
申请人： Brian J. Brown , Robert Tolles , James C. Nystrom , Doyle Bennett , Madhavi Chandrachood
发明人： Brian J. Brown , Robert Tolles , James C. Nystrom , Doyle Bennett , Madhavi Chandrachood
IPC分类号： B24B37/26 , B24B53/007 , B24B53/017 , H01L21/304 , B24B21/18
CPC分类号： B24B53/017 , B24B37/26
摘要： An improved chemical-mechanical polishing method and apparatus is provided. A brush is employed to continually brush slurry particles from surface features, e.g., grooves, on a polishing pad. In this manner slurry is prevented from becoming compacted within the grooves as the slurry passes beneath and is subjected to compressive forces of a wafer polishing head. The invention may be practiced by use of a stationary brush operatively coupled to the polishing pad surface, or by an improved conditioning assembly having both a diamond surface for conditioning the polishing pad and a brush for cleaning the pad's surface features. The brush portion of the conditioning assembly may or may not rotate as it is scanned across the surface of the polishing pad.

7. 发明授权

US06558471B2 Scrubber operation 有权
标题翻译：洗衣机操作
公开(公告)号：US06558471B2
公开(公告)日：2003-05-06
申请号：US09771087
申请日：2001-01-26
申请人： Brian J. Brown , Yufei Chen , David G. Andeen , Madhavi Chandrachood
发明人： Brian J. Brown , Yufei Chen , David G. Andeen , Madhavi Chandrachood
IPC分类号： B08B100
CPC分类号： H01L21/67046 , B08B1/04 , B08B3/02
摘要： Methods and apparatuses are provided that remove a scrubber brush from contact with a wafer surface prior to slowing down the scrubber brush's rotational rate. The scrubbing method may include rotating a scrubber brush at a non-reduced rate, while the scrubber brush is in contact with the wafer and removing the scrubber brush from contact with the wafer while rotating the scrubber brush at the non-reduced rate. The scrubbing apparatus has a controller programmed to perform the scrubbing method.
摘要翻译：提供了方法和装置，其在减缓洗涤器刷的旋转速率之前，将洗涤器刷与晶片表面接触。洗涤方法可以包括以非降低的速率旋转洗涤器刷子，同时洗涤器刷子与晶片接触并且在以非减小的速率旋转洗涤器刷子的同时，使洗涤器刷子与晶片接触。洗涤装置具有被编程为执行洗涤方法的控制器。

8. 发明申请

US20070257009A1 Method of processing a workpiece in a plasma reactor employing a dynamically adjustable plasma source power applicator 有权
标题翻译：使用动态可调的等离子体源功率施加器在等离子体反应器中处理工件的方法
公开(公告)号：US20070257009A1
公开(公告)日：2007-11-08
申请号：US11416801
申请日：2006-05-03
申请人： Madhavi Chandrachood , Richard Lewington , Darin Bivens , Ajay Kumar , Ibrahim Ibrahim , Michael Grimbergen , Renee Koch , Sheeba Panayil
发明人： Madhavi Chandrachood , Richard Lewington , Darin Bivens , Ajay Kumar , Ibrahim Ibrahim , Michael Grimbergen , Renee Koch , Sheeba Panayil
IPC分类号： C23F1/00
CPC分类号： H01J37/321 , H01L21/67069
摘要： A method for processing a workpiece in a plasma reactor chamber having radially inner and outer source power applicators at a ceiling of the chamber facing the workpiece, the inner and outer source power applicators and the workpiece sharing a common axis of symmetry. The method includes applying RF source power to the source power applicator, and introducing a process gas into the reactor chamber so as to carry out a plasma process on the workpiece characterized by a plasma process parameter, the plasma process parameter having a spatial distribution across the surface of the workpiece. The method further includes rotating at least the outer RF source power applicator about a radial tilt axis to a position at which the spatial distribution of the plasma process parameter has at least a nearly minimal non-symmetry relative to the common axis of symmetry, and translating the inner source power applicator relative to the outer source power applicator along the axis of symmetry to a location at which the spatial distribution has at least a nearly minimal non-uniformity across the surface of the workpiece.
摘要翻译：一种用于在等离子体反应器室中处理工件的方法，该等离子体反应器腔室具有径向内部和外部源功率施加器，位于腔室的面向工件的顶板处，内部和外部源功率施加器和工件共享公共对称轴线。该方法包括将RF源功率应用于源功率施加器，以及将工艺气体引入反应室，以便在工件上进行等离子体处理，其特征在于等离子体工艺参数，等离子体工艺参数具有横跨工件表面。该方法还包括至少将外部RF源功率施加器围绕径向倾斜轴线旋转到等离子体处理参数的空间分布相对于公共对称轴线具有至少几乎最小的非对称性的位置，并且平移所述内源电源施加器相对于所述外源功率施加器沿着所述对称轴线到所述空间分布在所述工件的所述表面上具有至少几乎最小不均匀性的位置。

9. 发明申请

US20060166108A1 Method for etching a molybdenum layer suitable for photomask fabrication 失效
标题翻译：蚀刻适用于光掩模制造的钼层的方法
公开(公告)号：US20060166108A1
公开(公告)日：2006-07-27
申请号：US11044358
申请日：2005-01-27
申请人： Madhavi Chandrachood , Ajay Kumar , Wai-Fan Yau
发明人： Madhavi Chandrachood , Ajay Kumar , Wai-Fan Yau
IPC分类号： G03C5/00 , G03F1/00
CPC分类号： G03F1/32 , G03F1/54 , G03F1/80
摘要： Methods for fabricating a photomask are disclosed herein. In one embodiment, a method for fabricating a photomask includes providing a filmstack having a molybdenum layer and a light-shielding layer in a processing chamber, patterning a first resist layer on the light-shielding layer, etching the light-shielding layer using the first resist layer as an etch mask, and etching the molybdenum layer using the patterned light-shielding layer and the patterned first resist layer as a composite mask.
摘要翻译：本文公开了制造光掩模的方法。在一个实施例中，一种制造光掩模的方法包括在处理室中提供具有钼层和遮光层的薄膜层，对遮光层上的第一抗蚀剂层进行图案化，使用第一抗蚀剂层作为蚀刻掩模，并且使用图案化遮光层和图案化的第一抗蚀剂层作为复合掩模蚀刻钼层。

10. 发明申请

US20060000802A1 Method and apparatus for photomask plasma etching 审中-公开
标题翻译：光掩模等离子体蚀刻的方法和装置
公开(公告)号：US20060000802A1
公开(公告)日：2006-01-05
申请号：US10882084
申请日：2004-06-30
申请人： Ajay Kumar , Madhavi Chandrachood , Scott Anderson , Peter Satitpunwaycha , Wai Yau
发明人： Ajay Kumar , Madhavi Chandrachood , Scott Anderson , Peter Satitpunwaycha , Wai Yau
IPC分类号： B44C1/22
CPC分类号： H01J37/32651 , G03F1/80 , H01J37/32357 , H01J37/32422 , H01J37/32623 , H01J37/32871 , H01J2237/0225
摘要： A method and apparatus for etching photomasks is provided herein. In one embodiment, a method of etching a photomask includes providing a process chamber having a substrate support pedestal adapted to receive a photomask substrate thereon. An ion-radical shield is disposed above the pedestal. A substrate is placed upon the pedestal beneath the ion-radical shield. A process gas is introduced into the process chamber and a plasma is formed from the process gas. The substrate is etched predominantly with radicals that pass through the shield.
摘要翻译：本文提供了蚀刻光掩模的方法和设备。在一个实施例中，蚀刻光掩模的方法包括提供具有适于在其上接收光掩模基板的基板支撑基座的处理室。离子基屏蔽设置在基座上方。将衬底放置在离子基屏蔽下方的基座上。工艺气体被引入到处理室中，并且从处理气体形成等离子体。基底主要用通过屏蔽的自由基进行蚀刻。

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