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    • 4. 发明授权
    • Compositions and methods for inhibiting vascular permeability
    • 抑制血管通透性的组合物和方法
    • US08309519B2
    • 2012-11-13
    • US13111776
    • 2011-05-19
    • Dean LiChristopher JonesNyall London
    • Dean LiChristopher JonesNyall London
    • A61K38/16A61K38/17C07K14/435
    • A61K38/17A61K38/00C07K14/70503G01N33/5023G01N2800/164
    • Compounds, compositions and methods for inhibiting vascular permeability and pathologic angiogenesis are described herein. Methods for producing and screening compounds and compositions capable of inhibiting vascular permeability and pathologic angiogenesis are also described herein. Pharmaceutical compositions are included in the compositions described herein. The compositions described herein are useful in, for example, methods of inhibiting vascular permeability and pathologic angiogenesis, including methods of inhibiting vascular permeability and pathologic angiogenesis induced by specific angiogenic, permeability and inflammatory factors, such as, for example VEGF, bFGF and thrombin. Methods for treating specific diseases and conditions are also provided herein.
    • 本文描述了用于抑制血管通透性和病理性血管生成的化合物,组合物和方法。 本文还描述了生产和筛选能够抑制血管通透性和病理性血管生成的化合物和组合物的方法。 药物组合物包括在本文所述的组合物中。 本文描述的组合物可用于例如抑制血管通透性和病理性血管生成的方法,包括抑制由特异性血管生成,通透性和炎性因子(例如VEGF,bFGF和凝血酶)诱导的血管通透性和病理性血管发生的方法。 本文还提供了治疗特定疾病和病症的方法。
    • 7. 发明授权
    • Method for etching silicon oxynitride and dielectric antireflection coatings
    • 蚀刻氮氧化硅和介电抗反射涂层的方法
    • US06291356B1
    • 2001-09-18
    • US09317655
    • 1999-05-24
    • Pavel IonovSung Ho KimDean LiChun YanJames Chang Wang
    • Pavel IonovSung Ho KimDean LiChun YanJames Chang Wang
    • H01L21302
    • H01L21/32139H01L21/0276H01L21/31116H01L21/3143
    • The present disclosure pertains to a method for plasma etching a semiconductor film stack. The film stack includes at least one layer comprising silicon oxynitride. The method includes etching the silicon oxynitride-comprising layer using an etchant gas mixture comprising chlorine and at least one compound containing fluorine and carbon. The atomic ratio of fluorine to chlorine in the etchant gas ranges between about 3:1 and about 0.01:1; preferably, between about 0.5:1 and about 0.01:1; most preferably, between about 0.25:1 and about 0.1:1. The etchant gas forms a fluorine-comprising polymer or species which deposits on exposed surfaces adjacent to the silicon oxynitride-comprising layer in an amount sufficient to reduce the etch rate of an adjacent material (such as a photoresist) while permitting the etching of the silicon oxynitride-comprising layer.
    • 本公开涉及用于等离子体蚀刻半导体膜堆叠的方法。 薄膜叠层包括至少一层包含氮氧化硅的层。 该方法包括使用包含氯和至少一种含氟和碳的化合物的蚀刻剂气体混合物来蚀刻含氧氮化硅层。 蚀刻剂气体中氟与氯的原子比范围为约3:1至约0.01:1; 优选约0.5:1至约0.01:1; 最优选在约0.25:1至约0.1:1之间。 蚀刻剂气体形成含氟聚合物或物质,它们以足以降低邻近材料(例如光致抗蚀剂)蚀刻速率的量沉积在与含氮氧化硅层相邻的暴露表面上,同时允许蚀刻硅 含氧氮化物的层。
    • 9. 发明申请
    • Mice which are +/- or -/- for the elastin gene as models for vascular disease
    • 作为血管疾病模型的弹性蛋白基因的+/-或 - / - 小鼠
    • US20050223419A1
    • 2005-10-06
    • US11046006
    • 2005-01-28
    • Mark KeatingDean Li
    • Mark KeatingDean Li
    • A61K38/39A61L31/04A61P9/10A01K67/027A61K38/54C12N5/06
    • A61L31/047A61K38/39A61L31/043
    • Elastin, the main component of arterial extracellular matrix, was thought to have a purely structural role. Consistent with this view, elastin hemizygous mice maintain arterial extensibility by increasing the number of elastic lamellae during development. However, mice lacking elastin die of obstructive arterial pathology. This pathology results from subendothelial proliferation and reorganization of smooth muscle, cellular changes similar to those observed in atherosclerosis. Thus, elastin is a molecular determinant of arterial morphogenesis and likely plays a central role in vascular disease. Mice which are heterozygous and null for the elastin gene have been developed. These mice are extremely useful for screening for drugs useful for treating persons with atherosclerosis, hypertension, SVAS or other vascular diseases.
    • 动弹性细胞外基质的主要成分弹性蛋白被认为具有纯粹的结构作用。 与此观点一致,弹性蛋白半合子小鼠通过在发育过程中增加弹性薄片的数量来维持动脉的伸展性。 然而,缺乏阻塞性动脉病理学弹性蛋白酶的小鼠。 这种病理学结果来自内皮细胞增殖和平滑肌重组,细胞变化与动脉粥样硬化中观察到的细胞变化相似。 因此,弹性蛋白是动脉形态发生的分子决定因素,并且可能在血管疾病中起核心作用。 已经开发了对于弹性蛋白基因是杂合的和无效的小鼠。 这些小鼠对于筛选可用于治疗动脉粥样硬化,高血压,SVAS或其他血管疾病的药物非常有用。
    • 10. 发明授权
    • Method for etching silicon oxynitride and dielectric antireflection coatings
    • 蚀刻氮氧化硅和介电抗反射涂层的方法
    • US06537918B2
    • 2003-03-25
    • US09920251
    • 2001-07-31
    • Pavel IonovSung Ho KimDean LiChun YanJames Chang Wang
    • Pavel IonovSung Ho KimDean LiChun YanJames Chang Wang
    • H01L21302
    • H01L21/32139H01L21/0276H01L21/31116H01L21/3143
    • A method for plasma etching a semiconductor film stack. The film stack includes at least one layer comprising silicon oxynitride. The method includes etching the silicon oxynitride-comprising layer using an etchant gas mixture comprising chlorine and at least one compound containing fluorine and carbon. The atomic ratio of fluorine to chlorine in the etchant gas ranges between about 3:1 and about 0.01:1; preferably, between about 0.5:1 and about 0.01:1; most preferably, between about 0.25:1 and about 0.1:1. The etchant gas forms a fluorine-comprising polymer or species which deposits on exposed surfaces adjacent to the silicon oxynitride-comprising layer in an amount sufficient to reduce the etch rate of an adjacent material (such as a photoresist) while permitting the etching of the silicon oxynitride-comprising layer.
    • 一种用于等离子体蚀刻半导体膜堆叠的方法。 薄膜叠层包括至少一层包含氮氧化硅的层。 该方法包括使用包含氯和至少一种含氟和碳的化合物的蚀刻剂气体混合物来蚀刻含氧氮化硅层。 蚀刻剂气体中氟与氯的原子比范围为约3:1至约0.01:1; 优选约0.5:1至约0.01:1; 最优选在约0.25:1至约0.1:1之间。 蚀刻剂气体形成含氟聚合物或物质,它们以足以降低邻近材料(例如光致抗蚀剂)蚀刻速率的量沉积在与含氮氧化硅层相邻的暴露表面上,同时允许蚀刻硅 含氧氮化物的层。