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    • 1. 发明授权
    • Method to form liquid crystal displays using a triple damascene technique
    • 使用三重镶嵌技术形成液晶显示器的方法
    • US6159759A
    • 2000-12-12
    • US443423
    • 1999-11-19
    • Kai ShaoCerdin LeeYi XuShao-Fu Sanford Chu
    • Kai ShaoCerdin LeeYi XuShao-Fu Sanford Chu
    • G02F1/1335G02F1/1362H01L21/00
    • G02F1/133553G02F1/136277
    • A new method of forming liquid crystal displays has been achieved. Metal conductors are provided in an insulating layer overlying a semiconductor substrate. A first isolation layer is deposited. A first silicon nitride layer is deposited. The first silicon nitride layer is patterned to form openings for planned vias overlying the metal conductors. A second isolation layer is deposited. A second silicon nitride layer is deposited. The second silicon nitride layer is patterned to form masks overlying where dummy supports for the metal pixels are planned and to form openings to extend the planned vias. A third isolation layer is deposited. The third isolation layer is patterned to form openings for the planned metal pixels. The second isolation layer and the first isolation layer are etched through to complete the vias and the dummy supports. A metal layer is deposited filling the openings for the metal pixels, the dummy support, and the vias. The metal layer is polished down to the top surface of the third isolation layer to complete the metal pixels. A thin film passivation is deposited. A liquid crystal layer is deposited. A transparent image point electrode is formed to complete the liquid crystal display.
    • 已经实现了一种形成液晶显示器的新方法。 金属导体设置在覆盖半​​导体衬底的绝缘层中。 沉积第一隔离层。 沉积第一氮化硅层。 图案化第一氮化硅层以形成覆盖金属导体的计划通孔的开口。 沉积第二隔离层。 沉积第二氮化硅层。 图案化第二氮化硅层以形成掩模,覆盖着金属像素的虚拟支撑被设计并形成扩展计划的通孔的开口。 沉积第三个隔离层。 图案化第三隔离层以形成用于计划的金属像素的开口。 蚀刻第二隔离层和第一隔离层以完成通孔和虚拟支撑。 沉积金属层,填充用于金属像素,虚拟支撑件和通孔的开口。 金属层被抛光到第三隔离层的顶表面以完成金属像素。 沉积薄膜钝化。 沉积液晶层。 形成透明图像点电极以完成液晶显示器。
    • 3. 发明授权
    • Method of fabrication of anti-fuse integrated with dual damascene process
    • 与双镶嵌工艺集成的抗熔丝的制造方法
    • US6124194A
    • 2000-09-26
    • US439365
    • 1999-11-15
    • Kai ShaoYi XuCerdin LeeShao-Fu Sanford Chu
    • Kai ShaoYi XuCerdin LeeShao-Fu Sanford Chu
    • H01L21/768H01L23/525H07L29/00
    • H01L21/7681H01L23/5252H01L2924/0002
    • A method of fabricating an anti-fuse module and dual damascene interconnect structure comprises the following steps. A semiconductor structure having at least two exposed metal lines covered by a first dielectric layer is provided. A first metal line is within an anti-fuse area and a second metal line is within an interconnect area. A first metal via is formed within the first dielectric layer within the anti-fuse area with the first metal via contacting the first metal line. A SiN layer is deposited over the first dielectric layer and the first metal via. The SiN layer is patterned to form at least two openings. A first opening exposes the first metal via, and a second opening exposes a portion of the first dielectric layer above the second metal line. A fusing element layer is deposited and patterned over the patterned SiN layered structure to form a fusing element over the first metal via. Simultaneously, an anti-fuse metal line is formed over the fusing element to form an anti-fuse module within the anti-fuse area, and a dual damascene interconnect is formed over, and contacting with, the second metal line and within the interconnect area.
    • 一种制造抗熔丝模块和双镶嵌互连结构的方法包括以下步骤。 提供具有被第一介电层覆盖的至少两个暴露的金属线的半导体结构。 第一金属线在反熔丝区内,第二金属线在互连区内。 第一金属通孔形成在反熔丝区域内的第一电介质层内,第一金属通孔接触第一金属线。 在第一介电层和第一金属通孔上沉积SiN层。 图案化SiN层以形成至少两个开口。 第一开口暴露第一金属通孔,第二开口暴露第二电介质层的第二金属线上方的一部分。 在图案化的SiN层状结构上沉积并图案化定影元件层,以在第一金属通孔之上形成定影元件。 同时,在熔断元件上方形成抗熔丝金属线,以在反熔丝区域内形成反熔丝模块,并且在第二金属线之间和互连区内形成双面镶嵌互连 。