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1. 发明申请

US20020048128A1 Magnetoresistance effect element, magnetic head and magnetic recording and/or reproducing system 有权
标题翻译：磁阻效应元件，磁头和磁记录和/或再现系统
公开(公告)号：US20020048128A1
公开(公告)日：2002-04-25
申请号：US09981987
申请日：2001-10-19
申请人： KABUSHIKI KAISHA TOSHIBA
发明人： Yuuzo Kamiguchi , Hiromi Yuasa , Tomohiko Nagata , Hiroaki Yoda , Katsuhiko Koui , Masatoshi Yoshikawa , Hitoshi Iwasaki , Masashi Sahashi , Masayuki Takagishi
IPC分类号： G11B005/39
CPC分类号： H01L43/08 , B82Y10/00 , B82Y25/00 , G01R33/093 , G11B5/3133 , G11B5/3143 , G11B5/39 , G11B5/3903 , G11B5/3929 , G11B2005/3996 , H01F10/3259 , H01F10/3272 , Y10T428/1114
摘要： There is provided a practical magnetoresistance effect element which has an appropriate value of resistance, which can be sensitized and which has a small number of magnetic layers to be controlled, and a magnetic head and magnetic recording and/or reproducing system using the same. In a magnetoresistance effect element wherein a sense current is caused to flow in a direction perpendicular to the plane of the film, a resistance regulating layer is provided in at least one of a pinned layer, a free layer and an non-magnetic intermediate layer. The resistance regulating layer contains, as a principal component, an oxide, a nitride, a fluoride, a carbide or a boride. The resistance regulating layer may be a continuous film or may have pin holes. Thus, it is possible to provide a practical magnetoresistance effect element which has an appropriate value of resistance, which can be sensitized and which has a small number of magnetic layers, while effectively utilizing the scattering effect depending on spin.
摘要翻译：提供了一种具有适当的电阻值的实用磁阻效应元件，其可以被敏化并且具有少量的要控制的磁性层，以及使用该电阻的磁头和磁记录和/或再现系统。在使感应电流沿与膜的平面垂直的方向流动的磁阻效应元件中，电阻调节层设置在被钉扎层，自由层和非磁性中间层中的至少一个中。电阻调节层含有氧化物，氮化物，氟化物，碳化物或硼化物作为主要成分。电阻调节层可以是连续的膜或者可以具有针孔。因此，可以提供具有适当的电阻值的实用的磁阻效应元件，其可以被敏化并且具有少量的磁性层，同时有效地利用依赖于自旋的散射效应。

2. 发明申请

US20040201929A1 Magnetoresistance effect element, magnetic head, and magnetic reproducing apparatus 有权
标题翻译：磁阻效应元件，磁头和磁再现装置
公开(公告)号：US20040201929A1
公开(公告)日：2004-10-14
申请号：US10659299
申请日：2003-09-11
申请人： KABUSHIKI KAISHA TOSHIBA
发明人： Susumu Hashimoto , Katsuhiko Koui , Masashi Sahashi , Hitoshi Iwasaki
IPC分类号： G11B005/39
CPC分类号： H01L43/08 , G11B5/3906 , H01L43/12 , Y10T428/1121
摘要： A magnetoresistance effect element comprises: a magnetoresistance effect film, a pair of electrodes, and a phase separation layer. The magnetoresistance effect film includes a first ferromagnetic layer whose direction of magnetization is pinned substantially in one direction, a second ferromagnetic layer whose direction of magnetization changes in response to an external magnetic field, and an intermediate layer provided between the first and second ferromagnetic layers. The pair of electrodes are electrically coupled to the magnetoresistance effect film and configured to supply a sense current perpendicularly to a film plane of the magnetoresistance effect film. The phase separation layer is provided between the pair of electrodes. The phase separation layer has a first phase and a second phase formed by a phase separation in a solid phase from an alloy including a plurality of elements. One of the first and second phases includes at least one element selected from the group consisting of oxygen, nitrogen, fluorine and carbon in higher concentration than other of the first and second phases.
摘要翻译：磁阻效应元件包括：磁阻效应膜，一对电极和相分离层。磁阻效应膜包括其磁化方向基本上被固定在一个方向上的第一铁磁层，其磁化方向响应于外部磁场而变化的第二铁磁性层和设置在第一和第二铁磁层之间的中间层。一对电极电耦合到磁阻效应膜并且被配置为提供垂直于磁阻效应膜的膜平面的感测电流。相分离层设置在该对电极之间。相分离层具有通过从包含多个元素的合金固相中相分离而形成的第一相和第二相。第一和第二相中的一个包括选自氧，氮，氟和碳中的至少一种元素，其浓度高于第一相和第二相中的其它相。

3. 发明申请

US20020048690A1 Magnetoresistance effect element, magnetic head, magnetic head assembly, magnetic storage system 审中-公开
公开(公告)号：US20020048690A1
公开(公告)日：2002-04-25
申请号：US09973053
申请日：2001-10-10
申请人： Kabushiki Kaisha Toshiba
发明人： Hideaki Fukuzawa , Yuzo Kamiguchi , Katsuhiko Koui , Shin-ichi Nakamura , Hitoshi Iwasaki , Kazuhiro Saito , Hiromi Fuke , Masatoshi Yoshikawa , Susumu Hashimoto , Masashi Sahashi
IPC分类号： G11B005/39
CPC分类号： H01F10/30 , B82Y10/00 , B82Y25/00 , G01R33/093 , G11B5/3906 , G11B5/3932 , G11B5/66 , G11B2005/3996 , H01F10/3272 , H01F10/3295 , H01F41/325 , Y10S428/90 , Y10T428/1107 , Y10T428/1121 , Y10T428/1143 , Y10T428/115 , Y10T428/1171 , Y10T428/1193 , Y10T428/12326 , Y10T428/12465 , Y10T428/12986 , Y10T428/265
摘要： Disclosed are a high-sensitivity and high-reliability magnetoresistance effect device (MR device) in which bias point designing is easy, and also a magnetic head, a magnetic head assembly and a magnetic recording/reproducing system incorporating the MR device. In the MR device incorporating a spin valve film, the magnetization direction of the free layer is at a certain angle to the magnetization direction of a second ferromagnetic layer therein when the applied magnetic field is zero. In this, the pinned magnetic layer comprises a pair of ferromagnetic films as antiferromagnetically coupled to each other via a coupling film existing therebetween. The device is provided with a means of keeping the magnetization direction of either one of the pair of ferromagnetic films constituting the pinned magnetic layer, and with a nonmagnetic high-conductivity layer as disposed adjacent to a first ferromagnetic layer on the side opposite to the side on which the first ferromagnetic layer is contacted with a nonmagnetic spacer layer. With that constitution, the device has extremely high sensitivity, and the bias point in the device is well controlled.

4. 发明申请

US20040246634A1 Magnetoresistance effect element, magnetic head and magnetic reproducing apparatus 失效
公开(公告)号：US20040246634A1
公开(公告)日：2004-12-09
申请号：US10887080
申请日：2004-07-09
申请人： KABUSHIKI KAISHA TOSHIBA
发明人： Hiromi Yuasa , Yuzo Kamiguchi , Masatoshi Yoshikawa , Katsuhiko Koui , Hitoshi Iwasaki , Tomohiko Nagata , Takeo Sakakubo , Masashi Sahashi
IPC分类号： G11B005/127 , G11B005/33
CPC分类号： B82Y25/00 , B82Y10/00 , G01R33/093 , G11B5/00 , G11B5/3903 , G11B2005/3996 , H01F10/30 , H01F10/3227 , H01F10/3272 , H01F10/3295 , H01L43/08 , H01L43/10
摘要： In a spin valve type element, an interface insertion layer (32, 34) of a material exhibiting large spin-dependent interface scattering is inserted in a location of a magnetically pinned layer (16) or a magnetically free layer (20) closer to a nonmagnetic intermediate layer (18). A nonmagnetic back layer (36) may be additionally inserted as an interface not in contact with the nonmagnetic intermediate layer to increase the output by making use of spin-dependent interface scattering along the interface between the pinned layer and the nonmagnetic back layer or between the free layer and the nonmagnetic back layer.

5. 发明申请

US20040121185A1 Magnetoresistance effect element, magnetic head, magnetic head assembly, magnetic storage system 失效
标题翻译：磁阻效应元件，磁头，磁头组件，磁存储系统
公开(公告)号：US20040121185A1
公开(公告)日：2004-06-24
申请号：US09973235
申请日：2001-10-10
申请人： Kabushiki Kaisha Toshiba
发明人： Hideaki Fukuzawa , Yuzo Kamiguchi , Katsuhiko Koui , Shin-ichi Nakamura , Hitoshi Iwasaki , Kazuhiro Saito , Hiromi Fuke , Masatshi Yoshikawa , Susumu Hashimoto , Masashi Sahashi
IPC分类号： H01L043/00
CPC分类号： H01F10/30 , B82Y10/00 , B82Y25/00 , G01R33/093 , G11B5/3906 , G11B5/3932 , G11B5/66 , G11B2005/3996 , H01F10/3272 , H01F10/3295 , H01F41/325 , Y10S428/90 , Y10T428/1107 , Y10T428/1121 , Y10T428/1143 , Y10T428/115 , Y10T428/1171 , Y10T428/1193 , Y10T428/12326 , Y10T428/12465 , Y10T428/12986 , Y10T428/265
摘要： Disclosed are a high-sensitivity and high-reliability magnetoresistance effect device (MR device) in which bias point designing is easy, and also a magnetic head, a magnetic head assembly and a magnetic recording/reproducing system incorporating the MR device. In the MR device incorporating a spin valve film, the magnetization direction of the free layer is at a certain angle to the magnetization direction of a second ferromagnetic layer therein when the applied magnetic field is zero. In this, the pinned magnetic layer comprises a pair of ferromagnetic films as antiferromagnetically coupled to each other via a coupling film existing therebetween. The device is provided with a means of keeping the magnetization direction of either one of the pair of ferromagnetic films constituting the pinned magnetic layer, and with a nonmagnetic high-conductivity layer as disposed adjacent to a first ferromagnetic layer on the side opposite to the side on which the first ferromagnetic layer is contacted with a nonmagnetic spacer layer. With that constitution, the device has extremely high sensitivity, and the bias point in the device is well controlled.
摘要翻译：公开了一种容易进行偏置设计的高灵敏度和高可靠性磁阻效应器件（MR器件），以及包含MR器件的磁头，磁头组件和磁记录/再现系统。在包含自旋阀膜的MR装置中，当施加的磁场为零时，自由层的磁化方向与其中第二铁磁性层的磁化方向成一定角度。在此，被钉扎的磁性层包括通过其间存在的耦合膜彼此反铁磁耦合的一对铁磁膜。该装置设置有保持构成被钉扎磁性层的一对铁磁膜中的任一个的磁化方向以及与侧面相反侧的第一铁磁层相邻设置的非磁性高导电性层第一铁磁层与非磁性间隔层接触。利用该结构，该器件具有极高的灵敏度，并且器件中的偏置点被良好地控制。

6. 发明申请

US20030011463A1 Magnetoresistive effect element, magnetic head and magnetic reproducing apparatus 有权
标题翻译：磁阻效应元件，磁头和磁再生装置
公开(公告)号：US20030011463A1
公开(公告)日：2003-01-16
申请号：US10178023
申请日：2002-06-24
申请人： KABUSHIKI KAISHA TOSHIBA
发明人： Hitoshi Iwasaki , Katsuhiko Koui , Masatoshi Yoshikawa , Hiromi Yuasa , Hideaki Fukuzawa , Masashi Sahashi
IPC分类号： H01L043/00
CPC分类号： B82Y25/00 , B82Y10/00 , G11B5/012 , G11B5/3903 , G11B5/3909 , G11B2005/3996 , H01F10/3254 , H01L43/10
摘要： In a CPP element using a metal intermediate layer excellent in shot noise and response to high frequencies unlike a TMR element, its magnetoresistive effect film includes a magnetic layer mainly made of a half-metal exhibiting ferromagnetism, ferrimagnetism or antiferromagnetism, and largely variable in way of conduction in response to spin direction of electrons.
摘要翻译：在使用与TMR元件不同的散粒噪声和高频响应的金属中间层的CPP元件中，其磁阻效应膜包括主要由呈现铁磁性，亚铁磁性或反铁磁性的半金属形成的磁性层，并且在很大程度上可变的响应于电子自旋方向的传导。

7. 发明申请

US20040021990A1 Magnetoresistance effect element, magnetic head, magnetic reproducing apparatus, and magnetic memory 有权
标题翻译：磁阻效应元件，磁头，磁再现装置和磁存储器
公开(公告)号：US20040021990A1
公开(公告)日：2004-02-05
申请号：US10400638
申请日：2003-03-28
申请人： Kabushiki Kaisha Toshiba
发明人： Katsuhiko Koui , Masatoshi Yoshikawa , Masayuki Takagishi , Masashi Sahashi , Takeo Sakakubo , Hitoshi Iwasaki
IPC分类号： G11B005/39 , G11C011/15
CPC分类号： H01L43/08 , B82Y10/00 , B82Y25/00 , G11B5/3903 , G11B5/3909 , G11B2005/3996 , H01F10/3254 , H01F10/3259 , H01F10/3268 , H01L27/224 , H01L27/228
摘要： A magnetoresistance effect element comprises a magnetoresistance effect film including a magnetically pinned layer whose direction of magnetization is pinned substantially in one direction, a magnetically free layer whose direction of magnetization changes in response to an external magnetic field, and a nonmagnetic intermediate layer located between the pinned layer and the free layer; and a pair of electrodes electrically connected to said magnetoresistance effect film to supply a sense current perpendicularly to a film plane of said magnetoresistance effect film, The intermediate layer has a first layer including a first region whose resistance is relatively high and second regions whose resistance is relatively low. The sense current preferentially flows through the second regions when the current passes the first layer. Alternatively, the concentration of oxygen in the first layer may have a two-dimensional fluctuation, and a first region where the concentration of oxygen is equal to or higher than 40 atomic % and a second region where the concentration of oxygen is equal to or lower than 35 atomic % may be provided in the first layer.
摘要翻译：磁阻效应元件包括磁阻效应膜，该磁阻效应膜包括磁性钉扎层，其磁化方向基本上被固定在一个方向上，磁化方向随着外部磁场而变化的磁性层以及位于其间的非磁性中间层固定层和自由层; 以及一对电极，电连接到所述磁阻效应膜，以提供垂直于所述磁阻效应膜的膜平面的感测电流。中间层具有包括第一区域的第一层，第一区域的电阻相对较高，第二区域的电阻为比较低当电流通过第一层时，感测电流优先流过第二区域。或者，第一层中的氧浓度可以具有二维波动，以及氧浓度等于或高于40原子％的第一区域和氧浓度等于或低于其的第二区域可以在第一层中设置35原子％以上。

8. 发明申请

US20030168673A1 Magnetoresistance effect element, magnetic head and magnetic reproducing apparatus 有权
标题翻译：磁阻效应元件，磁头和磁再现装置
公开(公告)号：US20030168673A1
公开(公告)日：2003-09-11
申请号：US10217410
申请日：2002-08-14
申请人： KABUSHIKI KAISHA TOSHIBA
发明人： Hiromi Yuasa , Yuzo Kamiguchi , Masatoshi Yoshikawa , Katsuhiko Koui , Hitoshi Iwasaki , Tomohiko Nagata , Takeo Sakakubo , Masashi Sahashi
IPC分类号： H01L031/0328
CPC分类号： B82Y25/00 , B82Y10/00 , G01R33/093 , G11B5/00 , G11B5/3903 , G11B2005/3996 , H01F10/30 , H01F10/3227 , H01F10/3272 , H01F10/3295 , H01L43/08 , H01L43/10
摘要： In a spin valve type element, an interface insertion layer (32, 34) of a material exhibiting large spin-dependent interface scattering is inserted in a location of a magnetically pinned layer (16) or a magnetically free layer (20) closer to a nonmagnetic intermediate layer (18). A nonmagnetic back layer (36) may be additionally inserted as an interface not in contact with the nonmagnetic intermediate layer to increase the output by making use of spin-dependent interface scattering along the interface between the pinned layer and the nonmagnetic back layer or between the free layer and the nonmagnetic back layer.
摘要翻译：在自旋阀型元件中，将表现出大的自旋相关界面散射的材料的界面插入层（32,34）插入到更靠近磁性固定层（16）或磁性层（20）的位置非磁性中间层（18）。可以另外插入非磁性背层（36）作为不与非磁性中间层接触的界面，以通过利用沿被钉扎层和非磁性背层之间的界面处的自旋相关界面散射来增加输出，自由层和非磁背层。

9. 发明申请

US20030011945A1 Magnetoresistive effect element, magnetic head and magnetic reproducing apparatus 有权
公开(公告)号：US20030011945A1
公开(公告)日：2003-01-16
申请号：US10175960
申请日：2002-06-21
申请人： KABUSHIKI KAISHA TOSHIBA
发明人： Hiromi Yuasa , Masatoshi Yoshikawa , Katsuhiko Koui , Hitoshi Iwasaki , Masashi Sahashi
IPC分类号： G11B005/39
CPC分类号： H01L43/08 , B82Y10/00 , B82Y25/00 , B82Y40/00 , G01R33/093 , G11B5/3903 , G11B5/3906 , G11B5/3909 , G11B5/3929 , G11B2005/3996 , H01F10/1936 , H01F10/3254 , H01F10/3259 , H01F10/3272 , H01F10/3281 , H01F41/305
摘要： A spin valve type magnetoresistive effect element for vertical electric conduction includes a magnetoresistive effect film in which a resistance adjustment layer made of a material containing conductive carriers not more than 1022/cm3 is inserted. Thus the resistance value of a portion in change of spin-relied conduction is raised to an adequate value, thereby to increase the resistance variable amount.

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