专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明申请

US20040189295A1 Magnetic sensor and method of producing the same 审中-公开
公开(公告)号：US20040189295A1
公开(公告)日：2004-09-30
申请号：US10821913
申请日：2004-04-12
发明人： Hideki Sato , Toshiyuki Oohashi , Yukio Wakui , Susumu Yoshida , Kokichi Aiso
IPC分类号： G01R033/09 , H01L043/00
CPC分类号： B82Y25/00 , B82Y40/00 , G01R33/09 , G01R33/093 , H01F41/302 , Y10T29/49002 , Y10T29/49037 , Y10T428/32
摘要： On a single chip are formed a plurality of magnetoresistance effect elements provided with pinned layers having fixed magnetization axes in the directions that cross each other. On a substrate 10 are formed magnetic layers that will become two magnetic tunnel effect elements 11, 21 as magnetoresistance effect elements. Magnetic-field-applying magnetic layers made of NiCo are formed to sandwich the magnetic layers in plan view. A magnetic field is applied to the magnetic-field-applying magnetic layers. The magnetic field is removed after the magnetic-field-applying magnetic layers are magnetized in the direction shown by arrow A. As a result of this, by the residual magnetization of the magnetic-field-applying magnetic layers, magnetic fields in the directions shown by arrows B are applied to the magnetic layers that will become magnetic tunnel effect elements 11, 21, whereby the magnetization of the pinned layers of the magnetic layers that will become magnetic tunnel effect elements 11, 21 is pinned in the directions shown by arrows B.

2. 发明申请

US20040150397A1 Magnetic sensor and method for manufacturing the same 失效
标题翻译：磁传感器及其制造方法
公开(公告)号：US20040150397A1
公开(公告)日：2004-08-05
申请号：US10478136
申请日：2003-11-20
发明人： Akio Kuroe , Sayuri Muramatsu , Akio Murata , Ken Takahashi , Yoshihiro Tosaki
IPC分类号： G01R033/02 , H01L043/00 , G11B005/33
CPC分类号： G11B5/332 , G01R33/02 , G11B5/335 , Y10T29/49002 , Y10T428/1171
摘要： In order to obtain a magneto-impedance type magnetic sensor having a soft magnetic film facing to a conductive nonmagnetic film, and available a large impedance change with a carrier signal at a relatively low frequency, the magnetic sensor comprises a meander type conductive nonmagnetic thin film of zigzag shape formed with at least one pair of electrode terminals at both ends and a soft magnetic film which is strip-shaped so as to face thereto at a plurality of regions and has an easy axis of magnetization in a width direction of the strip shape, a high frequency carrier signal is applied to the above-mentioned electrode terminals and further a direct current bias magnetic field is applied. By performing AM detection of an AM modulation signal output from the above-mentioned electrode terminals, an impedance change of the conductive nonmagnetic film which is changed by external magnetic field is detected as a change of the high frequency carrier signal, thereby the external magnetic field can be detected.
摘要翻译：为了获得具有面向导电非磁性膜的软磁性膜的磁阻型磁传感器，并且以较低频率的载波信号具有较大的阻抗变化，磁传感器包括弯曲型导电非磁性薄膜在两端形成有至少一对电极端子的锯齿形状，以及在多个区域呈带状的软磁性膜，并且在带状的宽度方向上具有容易的磁化轴，向上述电极端子施加高频载波信号，并施加直流偏置磁场。通过对从上述电极端子输出的AM调制信号进行AM检测，检测由外部磁场变化的导电性非磁性膜的阻抗变化，作为高频载波信号的变化，由此外部磁场可以检测。

3. 发明申请

US20040041685A1 Magnetoresistive based electronic switch 有权
标题翻译：基于磁阻的电子开关
公开(公告)号：US20040041685A1
公开(公告)日：2004-03-04
申请号：US10234962
申请日：2002-09-04
发明人： David R. McCollum , Wayne L. Ehlers , Michael J. Skarlupka
IPC分类号： H01L043/00
CPC分类号： H03K17/97
摘要： A magnetoresistive-based electronic switching apparatus and method. A housing having a first compartment contains switching electronics and a second compartment contains an actuation assembly. A barrier can separate the first compartment from the second compartment. An actuating magnet can be associated with the actuation assembly within the second compartment. The actuating magnet provides a magnetic field that can activate a magnetoresistive device located within the first compartment. Additionally, a magnetoresistive device responsive to the magnetic field of the actuating magnet can be utilized, wherein the magnetoresistive device located within the first compartment in association with the switching electronics provides a solid-state magnetoresistive switch thereof.
摘要翻译：一种基于磁阻的电子开关装置和方法。具有第一隔室的壳体包含开关电子设备，第二隔间包含致动组件。障碍物可以将第一隔室与第二隔室分开。致动磁体可以与第二隔室内的致动组件相关联。致动磁体提供可以激活位于第一隔室内的磁阻装置的磁场。此外，可以利用响应于致动磁体的磁场的磁阻器件，其中与开关电子器件相关联的位于第一隔室内的磁阻器件提供其固态磁阻开关。

4. 发明申请

US20030209770A1 Unipolar spin transistor and the applications of the same 失效
标题翻译：单极自旋晶体管与其应用相同
公开(公告)号：US20030209770A1
公开(公告)日：2003-11-13
申请号：US10455766
申请日：2003-06-04
发明人： Michael Edward Flatte , Giovanni Vignale
IPC分类号： H01L029/82 , H01L043/00
CPC分类号： B82Y25/00 , G01R33/06 , G11C11/36 , H01F10/3213 , H01F10/3254 , H01L29/66984
摘要： The unipolar spin transistor includes a first semiconductor region having a conductivity type and a first spin polarization, and a second semiconductor region having a conductivity type that is the same conductivity type of the first semiconductor region and a second spin polarization that is different from the first spin polarization of the first semiconductor region, and a third semiconductor region having a conductivity type that is the same conductivity type of the first semiconductor region and the first spin polarization. The unipolar spin transistor can also include a magnetic semiconductor wherein the semiconductor material is in a high-resistance state when the second spin polarization of the second region is opposite to the first spin polarization of the first and third regions, and wherein the semiconductor material is in a low-resistance state when the second spin polarization of the second region is aligned to the first spin polarization of the first and third regions.
摘要翻译：单极自旋晶体管包括具有导电类型和第一自旋极化的第一半导体区域，以及第二半导体区域，其具有与第一半导体区域相同的导电类型的导电类型和与第一半导体区域不同的第二自旋极化第一半导体区域的自旋极化和具有与第一半导体区域和第一自旋极化相同的导电类型的导电类型的第三半导体区域。单极自旋晶体管还可以包括磁性半导体，其中当第二区域的第二自旋极化与第一和第三区域的第一自旋极化相反时，半导体材料处于高电阻状态，并且其中半导体材料是当第二区域的第二自旋极化与第一和第三区域的第一自旋极化对准时处于低电阻状态。

5. 发明申请

US20030179071A1 Magnetoresistive element 审中-公开
标题翻译：磁阻元件
公开(公告)号：US20030179071A1
公开(公告)日：2003-09-25
申请号：US10344296
申请日：2003-02-07
发明人： Masayoshi Hiramoto , Nozomu Matsukawa , Akihiro Odagawa , Kenji Iijima , Hiroshi Sakakima
IPC分类号： H01L043/00
CPC分类号： B82Y25/00 , B82Y10/00 , G01R33/06 , G01R33/093 , G11B5/3903 , G11B5/3909 , H01F10/3254 , H01F10/3295 , H01L43/08
摘要： The present invention provides a tunnel magnetoresistive (TMR) element that increases a MR ratio and suppresses the unevenness in resistance. In an embodiment of the present invention, a surface property-controlling layer is arranged between the substrate and the tunnel layer. In another embodiment, at least one of the magnetic layers sandwiching the tunnel layer has an oriented crystal plane other than the closest packed plane. In still another embodiment, the at least one of the magnetic layers includes a magnetic element and a non-magnetic element and has an average electron number of 23.5 to 25.5 or 26.5 to 36. In still another embodiment, the TMR element includes an excess-element capturing layer. This layer includes an alloy or a compound that contains the excess element. The content of the excess element in the capturing layer is higher than those in the magnetic layers.
摘要翻译：本发明提供了增加MR比并抑制电阻不均匀性的隧道磁阻（TMR）元件。在本发明的实施例中，表面性质控制层被布置在基板和隧道层之间。在另一个实施例中，夹着隧道层的磁性层中的至少一个具有除最接近的填充平面以外的取向晶面。在另一个实施例中，至少一个磁性层包括磁性元件和非磁性元件，并且具有23.5至25.5或26.5至36的平均电子数。在另一个实施例中，TMR元件包括：元素捕获层。该层包括含有多余元素的合金或化合物。捕获层中的过量元素的含量高于磁性层中的含量。

6. 发明申请

US20030169147A1 Magnetoresistive effect element and magnetic memory device 有权
标题翻译：磁阻效应元件和磁存储器件
公开(公告)号：US20030169147A1
公开(公告)日：2003-09-11
申请号：US10360166
申请日：2003-02-06
发明人： Yutaka Higo
IPC分类号： H01L043/00
CPC分类号： G11C11/16 , B82Y10/00 , H01L27/228 , H01L43/08
摘要： In a magnetoresistive effect element in which at least a free layer (12) made of a ferromagnetic material, a nonmagnetic layer (13) made of a nonmagnetic material and a fixed layer (11) made of a ferromagnetic material and of which the magnetization direction is fixed are laminated in that order and in which information can be recorded by the use of a change of magnetization direction in the free layer (12), the free layer (12) is divided into a plurality of regions (12a), (12b), these regions (12a), (12b) are located around a write electrode (8) extending along the direction in which these respective layers (11) to (13) are laminated so as to surround the write electrode (8) and the respective regions (12a), (12b) surrounding the write electrode (8) constitute a magnetic field returning structure for returning a magnetic field.
摘要翻译：在其中至少由铁磁材料制成的自由层（12），由非磁性材料制成的非磁性层（13）和由铁磁材料制成的固定层（11）的磁阻效应元件中，其磁化方向固定的顺序层叠，并且其中可以通过使用自由层（12）中的磁化方向的变化来记录信息，自由层（12）被分成多个区域（12a），（12b ），这些区域（12a），（12b）位于沿着这些各层（11）〜（13）的层叠方向延伸的写入电极（8）的周围，以包围写入电极（8）围绕写入电极（8）的各个区域（12a），（12b）构成用于返回磁场的磁场返回结构。

7. 发明申请

US20020153580A1 Semiconductor memory device using megneto resistive element and method of manufacturing the same 有权
标题翻译：使用兆欧电阻元件的半导体存储器件及其制造方法
公开(公告)号：US20020153580A1
公开(公告)日：2002-10-24
申请号：US10125374
申请日：2002-04-19
发明人： Keiji Hosotani , Kentaro Nakajima
IPC分类号： H01L043/00
CPC分类号： H01L27/228 , B82Y10/00 , G11C11/15 , G11C11/16 , H01L27/224
摘要： A semiconductor memory device includes a first wiring extending in a first direction, a second wiring extending in a second direction differing from the first direction, and a magneto resistive element arranged between the first and second wirings and comprising a first portion and a second portion, the second portion being in contact with the second wiring and extending along the second wiring to reach an outside region positioned outside the first portion.
摘要翻译：半导体存储器件包括沿第一方向延伸的第一布线，沿与第一方向不同的第二方向延伸的第二布线和布置在第一和第二布线之间并包括第一部分和第二部分的磁阻元件，所述第二部分与所述第二布线接触并且沿着所述第二布线延伸以到达位于所述第一部分外侧的外部区域。

8. 发明申请

US20010026947A1 Thin-film magnetic head material and method of manufacturing same and method of manufacturing thin-film magnetic head 失效
标题翻译：薄膜磁头材料及其制造方法及制造薄膜磁头的方法
公开(公告)号：US20010026947A1
公开(公告)日：2001-10-04
申请号：US09865445
申请日：2001-05-29
申请人： TDK CORPORATION
发明人： Yoshitaka Sasaki , Hiroyuki Itoh
IPC分类号： H01L043/00 , G11B005/70 , G11B005/31 , H01L021/00
CPC分类号： G11B5/3173 , G11B5/3103 , G11B5/3116 , G11B5/3163 , G11B5/3166 , G11B5/3967 , Y10S428/90 , Y10T29/49004 , Y10T29/49021 , Y10T29/49032 , Y10T29/49036 , Y10T29/49037 , Y10T29/49041 , Y10T29/49046 , Y10T29/49789 , Y10T29/49792 , Y10T29/49794 , Y10T29/49798 , Y10T428/11 , Y10T428/1171 , Y10T428/24355
摘要： An object of the invention is to increase the number of thin-film magnetic heads obtained. In a wafer a plurality of rows of head-to-be sections to be thin-film magnetic heads are aligned. The wafer includes: an inter-row cutting section provided to be a position at which adjacent ones of the rows are to be separated; and an intra-row cutting section provided to be a position at which adjacent ones of the head-to be sections in each of the rows are to be separated. In the wafer a detection element for detecting an amount of processing is formed near the medium-facing surface-side end of the intra-row cutting section. An electrode for monitoring is formed in the inter-row cutting section in the wafer for electrically connecting the detection element to an external device. Furthermore, a lead for monitoring is formed in the intra-row cutting section for electrically connecting the electrode to the detection element.
摘要翻译：本发明的目的是增加获得的薄膜磁头的数量。在晶片中，将要排列成为薄膜磁头的多行首要部分对齐。该晶片包括：排列间切割部，设置成相邻的行分离的位置; 以及设置成作为要分离每行中的相邻的头部的部分的位置的行内切割部。在晶片中，在行内切割部的中间表面侧端附近形成有用于检测处理量的检测元件。用于监视的电极形成在用于将检测元件电连接到外部装置的晶片中的行间切割部分中。此外，在用于将电极与检测元件电连接的行内切割部分中形成用于监视的引线。

9. 发明申请

US20040262627A1 Magnetic device with improved antiferromagnetically coupling film 有权
标题翻译：具有改进的反铁磁耦合膜的磁性装置
公开(公告)号：US20040262627A1
公开(公告)日：2004-12-30
申请号：US10602504
申请日：2003-06-24
发明人： Mary F. Doerner , Eric Edward Fullerton
IPC分类号： H01L029/88 , H01L043/00
CPC分类号： B82Y25/00 , B82Y10/00 , G01R33/093 , G11B5/3903 , G11B5/3909 , G11B5/66 , G11B2005/001 , G11C11/15 , H01F10/324 , H01L43/10 , Y10T428/12875 , Y10T428/12931 , Y10T428/2495
摘要： The invention is a magnetic device, i.e., a magnetoresistive sensor or a magnetic tunnel junction device, that has a ferromagnetic structure of two ferromagnetic layers antiferromagnetically coupled together with an improved antiferromagnetically coupling (AFC) film. The AFC film is an alloy of Ru100-xFex where x is between approximately 10 and 60 atomic percent. This AFC film increases the exchange coupling by up to a factor or two and has an hcp crystalline structure making it compatible with Co alloy ferromagnetic layers.
摘要翻译：本发明是具有与改进的反铁磁耦合（AFC）膜反铁磁耦合在一起的两个铁磁层的铁磁结构的磁性装置，即磁阻传感器或磁性隧道结装置。 AFC膜是Ru100-xFex的合金，其中x在约10和60原子％之间。这种AFC膜将交换耦合增加高达一个或两个，并且具有hcp晶体结构，使其与Co合金铁磁层相容。

10. 发明申请

US20040041218A1 Magnetic shielding for reducing magnetic interference 有权
公开(公告)号：US20040041218A1
公开(公告)日：2004-03-04
申请号：US10233110
申请日：2002-08-30
发明人： Manish Sharma , Manoj Bhattacharyya
IPC分类号： H01L043/00
CPC分类号： H01L27/222
摘要： A magnetic memory array comprises a plurality of magnetic memory cells, a magnetic shielding disposed adjacent to at least one of the magnetic memory cells to reduce magnetic interference with respect to another of the magnetic memory cells, and an insulator disposed as to separate at least a portion of the magnetic shielding from the at least one magnetic memory cell. The magnetic shielding may be a magnetic shield layer, patterned magnetic shield materials, and/or magnetic particles embedded in the insulator.

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式