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    • 1. 发明申请
    • RADIATION DETECTOR ASSEMBLY WITH TEST CIRCUITRY
    • 辐射检测器总成与测试电路
    • WO2011077302A2
    • 2011-06-30
    • PCT/IB2010055633
    • 2010-12-07
    • KONINKL PHILIPS ELECTRONICS NVPHILIPS INTELLECTUAL PROPERTYHERRMANN CHRISTOPHSTEADMAN ROGERMUELHENS OLIVER
    • HERRMANN CHRISTOPHSTEADMAN ROGERMUELHENS OLIVER
    • G01T1/17
    • G01T1/243G01T1/247G01T7/005H01J49/0009H04N5/32H04N5/378H04N17/002
    • A radiation detector assembly (20) includes a detector array module (40) configured to convert radiation particles to electrical detection pulses, and an application specific integrated circuit (ASIC) (42) operatively connected with the detector array. The ASIC includes signal processing circuitry (60) configured to digitize an electrical detection pulse received from the detector array, and test circuitry (80) configured to inject a test electrical pulse into the signal processing circuitry. The test circuitry includes a current meter (84) configured to measure the test electrical pulse injected into the signal processing circuitry, and a charge pulse generator (82) configured to generate a test electrical pulse that is injected into the signal processing circuitry. The radiation detector assembly (20) is assembled by operatively connecting the ASIC (42) with the detector array module (40), and the signal processing circuitry (60) of the ASIC of the assembled radiation detector assembly is tested without the use of radiation.
    • 辐射检测器组件(20)包括被配置为将辐射粒子转换成电检测脉冲的检测器阵列模块(40)以及与检测器阵列可操作地连接的专用集成电路(ASIC)(42)。 ASIC包括被配置为数字化从检测器阵列接收的电检测脉冲的信号处理电路(60),以及配置成将测试电脉冲注入到信号处理电路中的测试电路(80)。 测试电路包括配置成测量注入到信号处理电路中的测试电脉冲的电流计(84)和被配置为产生被注入到信号处理电路中的测试电脉冲的充电脉冲发生器(82)。 通过将ASIC(42)与检测器阵列模块(40)可操作地连接来组装放射线检测器组件(20),并且组装的辐射探测器组件的ASIC的信号处理电路(60)被测试而不使用辐射 。
    • 3. 发明申请
    • SPECTRAL IMAGING
    • 光谱成像
    • WO2010119358A3
    • 2011-08-25
    • PCT/IB2010051101
    • 2010-03-15
    • KONINKL PHILIPS ELECTRONICS NVPHILIPS INTELLECTUAL PROPERTYBAEUMER CHRISTIANHERRMANN CHRISTOPHSTEADMAN ROGERRUETTEN WALTER
    • BAEUMER CHRISTIANHERRMANN CHRISTOPHSTEADMAN ROGERRUETTEN WALTER
    • G01T1/164
    • G01T1/1647G01T1/2985
    • An imaging system includes a scintillator array (202) and a digital photomultiplier array (204). A photon counting channel (212), an integrating channel (210), and a moment generating channel (214) process the output signal of the digital photomultiplier array (204). A reconstructor (122) spectrally resolves the first, the second and the third output signals. In one embodiment, a controller (232) activates the photon counting channel (212) to process the digital signal only if a radiation flux is below a predetermined threshold. An imaging system includes at least one direct conversion layer (302) and at least two scintillator layers (304) and corresponding photosensors (306). A photon counting channel (212) processes an output of the at least one direct conversion layer (302), and an integrating channel (210) and a moment generating channel (214) process respective outputs of the photosensors (306). A reconstructor (122) spectrally resolves the first, the second and the third output signals.
    • 成像系统包括闪烁体阵列(202)和数字光电倍增管阵列(204)。 光子计数通道(212),积分通道(210)和力矩产生通道(214)处理数字光电倍增管阵列(204)的输出信号。 重建器(122)对第一,第二和第三输出信号进行光谱解析。 在一个实施例中,仅当辐射通量低于预定阈值时,控制器(232)激活光子计数通道(212)才能处理数字信号。 成像系统包括至少一个直接转换层(302)和至少两个闪烁体层(304)和对应的光电传感器(306)。 光子计数通道(212)处理至少一个直接转换层(302)的输出,并且积分通道(210)和力矩产生通道(214)处理光电传感器(306)的相应输出。 重建器(122)对第一,第二和第三输出信号进行光谱解析。
    • 9. 发明申请
    • LOW OHMIC THROUGH SUBSTRATE INTERCONNECTION FOR SEMICONDUCTOR CARRIERS
    • 通过半导体载体的基板互连的低OHMIC
    • WO2007110799A3
    • 2007-12-13
    • PCT/IB2007050914
    • 2007-03-16
    • PHILIPS INTELLECTUAL PROPERTYKONINKL PHILIPS ELECTRONICS NVVOGTMEIER GEREONSTEADMAN ROGERDORSCHEID RALFJONKERS JEROEN
    • VOGTMEIER GEREONSTEADMAN ROGERDORSCHEID RALFJONKERS JEROEN
    • H01L23/48
    • H01L21/76898H01L23/481H01L2224/0401H01L2224/05H01L2224/131H01L2924/014
    • It is described a low ohmic Through Wafer Interconnection (TWI) for electronic chips formed on a semiconductor substrate (600). The TWI comprises a first connection (610) extending between a front surface and a back surface of the substrate (600). The first connection (610) comprises a through hole filled with a low ohmic material having a specific resistivity lower than poly silicon. The TWI further comprises a second connection (615) also extending between the front surface and the back surface. The second connection (615) is spatially separated from the first connection (610) by at least a portion of the semiconductor substrate (600). The front surface is provided with a integrated circuit arrangement (620) wherein the first connection (610) is electrically coupled to at least one node of the integrated circuit arrangement (620) without penetrating the integrated circuit arrangement (620). During processing the TWI the through hole may be filled first with a non-metallic material, e.g. poly silicon. After forming integrated components (620) on top of the front surface the substrate (600) may be thinned and the non-metallic material may be substituted with the low ohmic material, which is in particular a metallic material.
    • 描述了形成在半导体衬底(600)上的电子芯片的低欧姆通晶片互连(TWI)。 TWI包括在基板(600)的前表面和后表面之间延伸的第一连接(610)。 第一连接(610)包括填充有低于多晶硅的比电阻率的低欧姆材料的通孔。 TWI还包括也在前表面和后表面之间延伸的第二连接(615)。 第二连接(615)通过半导体衬底(600)的至少一部分在空间上与第一连接(610)分离。 前表面设置有集成电路装置(620),其中第一连接(610)电耦合到集成电路装置(620)的至少一个节点而不穿透集成电路装置(620)。 在处理TWI期间,通孔可以首先用非金属材料填充,例如, 多晶硅。 在前表面顶部形成集成组件(620)之后,可以使衬底(600)变薄并且非金属材料可以被低欧姆材料代替,这是特别是金属材料。