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    • 1. 发明申请
    • LOW OHMIC THROUGH SUBSTRATE INTERCONNECTION FOR SEMICONDUCTOR CARRIERS
    • 通过半导体载体的基板互连的低OHMIC
    • WO2007110799A3
    • 2007-12-13
    • PCT/IB2007050914
    • 2007-03-16
    • PHILIPS INTELLECTUAL PROPERTYKONINKL PHILIPS ELECTRONICS NVVOGTMEIER GEREONSTEADMAN ROGERDORSCHEID RALFJONKERS JEROEN
    • VOGTMEIER GEREONSTEADMAN ROGERDORSCHEID RALFJONKERS JEROEN
    • H01L23/48
    • H01L21/76898H01L23/481H01L2224/0401H01L2224/05H01L2224/131H01L2924/014
    • It is described a low ohmic Through Wafer Interconnection (TWI) for electronic chips formed on a semiconductor substrate (600). The TWI comprises a first connection (610) extending between a front surface and a back surface of the substrate (600). The first connection (610) comprises a through hole filled with a low ohmic material having a specific resistivity lower than poly silicon. The TWI further comprises a second connection (615) also extending between the front surface and the back surface. The second connection (615) is spatially separated from the first connection (610) by at least a portion of the semiconductor substrate (600). The front surface is provided with a integrated circuit arrangement (620) wherein the first connection (610) is electrically coupled to at least one node of the integrated circuit arrangement (620) without penetrating the integrated circuit arrangement (620). During processing the TWI the through hole may be filled first with a non-metallic material, e.g. poly silicon. After forming integrated components (620) on top of the front surface the substrate (600) may be thinned and the non-metallic material may be substituted with the low ohmic material, which is in particular a metallic material.
    • 描述了形成在半导体衬底(600)上的电子芯片的低欧姆通晶片互连(TWI)。 TWI包括在基板(600)的前表面和后表面之间延伸的第一连接(610)。 第一连接(610)包括填充有低于多晶硅的比电阻率的低欧姆材料的通孔。 TWI还包括也在前表面和后表面之间延伸的第二连接(615)。 第二连接(615)通过半导体衬底(600)的至少一部分在空间上与第一连接(610)分离。 前表面设置有集成电路装置(620),其中第一连接(610)电耦合到集成电路装置(620)的至少一个节点而不穿透集成电路装置(620)。 在处理TWI期间,通孔可以首先用非金属材料填充,例如, 多晶硅。 在前表面顶部形成集成组件(620)之后,可以使衬底(600)变薄并且非金属材料可以被低欧姆材料代替,这是特别是金属材料。
    • 7. 发明申请
    • METHOD AND APPARATUS FOR APPLYING MATERIAL TO A SURFACE OF AN ANODE OF AN X-RAY SOURCE, ANODE AND X-RAY SOURCE
    • 将材料应用于X射线源,阳极和X射线源的阳极表面的方法和装置
    • WO2009019645A2
    • 2009-02-12
    • PCT/IB2008053102
    • 2008-08-04
    • PHILIPS INTELLECTUAL PROPERTYKONINKL PHILIPS ELECTRONICS NVDORSCHEID RALFVOGTMEIER GEREONPIETIG RAINER
    • DORSCHEID RALFVOGTMEIER GEREONPIETIG RAINER
    • H01J35/08
    • H01J35/08H01J2235/083H01J2235/085
    • A method and an apparatus for locally applying material to the surface of an anode of an X-ray source as well as a corresponding anode is presented. Anode material such as a repair material for filling a recess (121) in an X-ray emitting surface (115) is applied to the X-ray emitting surface of an anode (101). The location where such material is to be applied may be detected using a laser beam (133). The applied repair material including particles (41) of anode material such as tungsten, rhenium or molybdenum, is subsequently locally sintered using a high-energy laser beam (151). The sintered material may then be melted using a high-energy electron beam (163). Using such method, a damaged surface of an anode may be locally repaired. Alternatively, structures of different anode materials or of protrusions having different levels can be provided on the X-ray emitting surface (115) in order to selectively manipulate the X-ray emitting characteristics of the anode (101).
    • 提出了一种用于将材料局部施加到X射线源的阳极表面以及相应阳极的方法和装置。 向阳极(101)的X射线发射面施加阳极材料,例如用于填充X射线发射表面(115)中的凹部(121)的修复材料。 可以使用激光束(133)来检测施加这种材料的位置。 随后使用高能激光束局部烧结包括诸如钨,铼或钼的阳极材料的颗粒(41)的施加的修复材料。 然后可以使用高能电子束(163)熔化烧结材料。 使用这种方法,可以局部地修复阳极损坏的表面。 或者,可以在X射线发射表面(115)上提供不同阳极材料或具有不同水平的突起的结构,以选择性地操纵阳极(101)的X射线发射特性。
    • 9. 发明申请
    • DETECTOR ARRANGEMENT, ESPECIALLY FOR A COMPUTER TOMOGRAPH
    • 探测器安排,特别是计算机断层扫描
    • WO2005052635A3
    • 2005-10-20
    • PCT/IB2004052489
    • 2004-11-19
    • PHILIPS INTELLECTUAL PROPERTYKONINKL PHILIPS ELECTRONICS NVVOGTMEIER GEREON
    • VOGTMEIER GEREON
    • G01T1/20G01T1/29
    • G01T1/2985G01T1/2018
    • A detector arrangement (10) for detecting and transferring detector signals to a processing unit is described. This detector arrangement is provided in particular for use in a computer tomograph for high-resolution detection of X-rays, the processing unit being in the form of a central processing unit or buffer memory (Z) on a rotatable portion of a gantry (1). To transfer the detector signals with the minimum number of contacts or plug-in connectors also in the case of a high-resolution detector arrangement (10), this comprises at least one detector module having a plurality of individual detector elements as well as an electrical unit having an electro-optical transducer for processing the signals of the detector elements and for generating optical detector module output signals.
    • 描述了用于检测检测器信号并将其传送到处理单元的检测器装置(10)。 该检测器装置尤其用于在X射线高分辨率检测的计算机断层摄影装置中使用,该处理单元以机架(1)的可旋转部分上的中央处理单元或缓冲存储器(Z)的形式存在 )。 为了在高分辨率检测器装置(10)的情况下也用最少数量的触点或插入式连接器传送检测器信号,这包括至少一个检测器模块,其具有多个单独的检测器元件以及电气 具有用于处理检测器元件的信号并用于产生光学检测器模块输出信号的电光转换器的单元。