基本信息:
- 专利标题： MAGNETORESISTIVE EFFECT ELEMENT
- 申请号：JP2007019973 申请日：2007-01-30
- 公开(公告)号：JP2008187048A 公开(公告)日：2008-08-14
- 发明人： YOSHIKAWA MASAHISA , KITAGAWA EIJI , SHIMOMURA NAOHARU , IKEGAWA SUMIO , KISHI TATSUYA , YODA HIROAKI , UEDA TOMOMASA
- 申请人： TOSHIBA CORP
- 专利权人： TOSHIBA CORP
- 当前专利权人： TOSHIBA CORP
- 优先权： JP2007019973 2007-01-30
- 主分类号： H01L43/08
- IPC分类号： H01L43/08 ; H01L21/8246 ; H01L27/105
摘要：
PROBLEM TO BE SOLVED: To achieve both reduction in writing currents and improvement in MR ratio at reading. SOLUTION: The magnetoresistive effect element comprises first and second ferromagnetic layers 11A and 11B of which magnetizing directions are fixed mutually opposite; a third ferromagnetic layer 12, which is arranged between the first and second ferromagnetic layers 11A and 11B with magnetizing direction changing; a first non magnetic layer 13A arranged between the first ferromagnetic layer 11A and the third ferromagnetic layer 12; and a second non magnetic layer 13B arranged between the second ferromagnetic layer 11B and the third ferromagnetic layer 12. When a reading voltage Ir is biased, MR ratio of a first unit U1 is in inverse state, while the MR ratio of a second unit U2 is in normal state. When writing voltages Iw"0" and Iw"1" are biased, the MR ratio of the first and second units U1 and U2 are both in the normal state. COPYRIGHT: (C)2008,JPO&INPIT
信息查询:
EspacenetIPC结构图谱:
| H | 电学 |
| --H01 | 基本电气元件 |
| ----H01L | 半导体器件；其他类目未包含的电固体器件 |
| ------H01L43/00 | 应用电—磁或者类似磁效应的器件；专门适用于制造或处理这些器件或其部件的方法或设备 |
| --------H01L43/08 | .磁场控制的电阻器 |