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1. 发明专利

JPH09330101A UNIT AND METHOD FOR CONTROL 失效
公开(公告)号：JPH09330101A
公开(公告)日：1997-12-22
申请号：JP15269796
申请日：1996-06-13
申请人： KOKUSAI CHODENDO SANGYO GIJUTS , ISHIKAWAJIMA HARIMA HEAVY IND , ISHIKAWAJIMA SYST TECH
发明人： EGAMI MASAHIRO , SHIOBARA TORU , MINEGISHI TETSUYA , HISA YASUYUKI , SATO YASUSHI , MORIMOTO HIROMITSU
IPC分类号： G05B7/02 , G05B19/042 , G05B19/05
摘要： PROBLEM TO BE SOLVED: To alter the control unit without stopping a controlled object by providing a switching means which outputs control logic data and manipulated variables selectively to the controlled object. SOLUTION: For example, the manipulated variable outputted from a switching means a3 is switched from a 1st manipulated variable to a 2nd manipulated variable. At this point of time, the entity of the controlled object B is switched from 1st control logic a1 to 2nd control logic a2. Then the program of the 1st control logic a1 is replaced with a program to newly be modified. The new program is executed, and the 1st control logic a1 is actuate to start parallel processing for an observed quantity together with the 2nd control logic a2. The manipulated variable outputted from the switching means a3 is switched from the 2nd manipulated variable to the 1st manipulated variable and the controlled object B is controlled by the 1st control logic al again.

2. 发明专利

JPH09110582A CRYSTAL PRODUCING APPARATUS 失效
公开(公告)号：JPH09110582A
公开(公告)日：1997-04-28
申请号：JP26328395
申请日：1995-10-11
申请人： KOKUSAI CHODENDO SANGYO GIJUTS , ISHIKAWAJIMA HARIMA HEAVY IND , SUMITOMO ELECTRIC INDUSTRIES
发明人： EGAMI MASAHIRO , SHIOBARA TORU , NAMIKAWA YASUO
IPC分类号： C30B15/00 , C30B15/26 , C30B29/22
摘要： PROBLEM TO BE SOLVED: To provide a crystal producing apparatus capable of producing a crystal having excellent quality in suppressing generation of a nucleus or a floating material on the surface and readily performable of an observation or a dimension measurement of a crystal. SOLUTION: This crystal producing apparatus has a cylindrical chamber 2, a crucible 3 provided at the center of the chamber 2, a cylindrical heater 5 surrounding the crucible 3, a heat insulating material 6 provided upper the crucible 3, first and second transparent boards 7 and 8 closing a central hole of the heat insulating material 6, a pulling up axis 4 piercing through central holes in the transparent boards 7 and 8, a crystal-irradiation mechanism 9 irradiating light to a crystal, a crystal dimension measuring device 10 measuring the dimension of the crystal and an atmosphere gas distributing mechanism 11 in the chamber 2.

3. 发明专利

JPH101389A AUTOMATIC PRODUCTION OF OXIDE CRYSTAL AND DEVICE THEREFOR 失效
公开(公告)号：JPH101389A
公开(公告)日：1998-01-06
申请号：JP15703096
申请日：1996-06-18
申请人： KOKUSAI CHODENDO SANGYO GIJUTS , ISHIKAWAJIMA HARIMA HEAVY IND
发明人： EGAMI MASAHIRO , SHIOBARA TORU
IPC分类号： C30B15/02 , C30B29/22 , C30B35/00
摘要： PROBLEM TO BE SOLVED: To provide the production method for performing a pulling-up production process of an oxide crystal or oxide superconductor crystal with automatic control and also to provide the device for the production. SOLUTION: In this production, at the time of performing the crystal growth of an oxide crystal, the composition for replenishing a liquid phase 3 with constituent elements of the oxide crystal includes the composition of a solid phase 2 that is located apart from the position where the oxide crystal is to be grown and has a different composition from that of the oxide crystal, and at least consists of the oxide crystal constituent elements and also, the liquid phase 2 having a different composition from that of the oxide crystal is used and accordingly, the oxide crystal having a composition different from those of the solid phase 2 and liquid phase 3 is grown. That is, this production comprises: using as the composition for replenishing a liquid phase 3 with constituent elements of an oxide crystal, a composition that includes the composition of a solid phase 2 which is located apart from the position where the oxide crystal is to be grown and has a composition different from that of the oxide crystal, and at least consists of the oxide crystal constituent elements; using the liquid phase 3 having a composition different from that of the oxide crystal; automatically controlling each of a seed crystal 5, the rotational speed and rotational direction of the seed crystal and the atmosphere inside a furnace; and growing the oxide crystal having a composition different from those of the solid phase 2 and liquid phase 3.

4. 发明专利

JPH09100193A PREPARATION OF OXIDE CRYSTAL 失效
公开(公告)号：JPH09100193A
公开(公告)日：1997-04-15
申请号：JP26047195
申请日：1995-10-06
申请人： SUMITOMO ELECTRIC INDUSTRIES , KOKUSAI CHODENDO SANGYO GIJUTS , ISHIKAWAJIMA HARIMA HEAVY IND
发明人： YAO SHIN , NAMIKAWA YASUO , EGAMI MASAHIRO , SHIOBARA TORU
IPC分类号： C01G1/00 , C01G3/00 , C30B15/00 , C30B29/22
摘要： PROBLEM TO BE SOLVED: To increase the crystal growth rate and prepare a large-sized oxide crystal of good quality in relation to a method for preparing the crystal for an oxide superconductor of a Y-based or a lanthanoid-based element by keeping the atmosphere for growing the oxide crystal under a higher pressure than oxygen partial pressure in the atmospheric air. SOLUTION: The atmosphere for growing an oxide crystal having a structure of R1+x Ba2-x Cu3 O7-z [R is Y or a lanthanoid-based element; 0 =0.8atm partial oxygen pressure. A crystal of Y123 (YBa2 Cu3 O7-x ) is prepared by using an apparatus in the figure. Y2 BaCuO5 is placed in the lower part of a crucible 6 made of a sintered compact of Y2 O3 . Barium carbonate is mixed with copper oxide so as to afford 3:5 molar ratio of Ba to Cu and the resultant mixture is then calcined to provide a substance, which is placed in the upper part of the crucible and used as a raw material for a melt 4. Supporting columns 7 made of an MgO single crystal are stood in a dish 8 made of Al2 O3 and Ag 9 is placed therein. The crucible 6 is then placed on the dish 8. Oxygen is introduced from an introduction port 14 is regulate the oxygen concentration at >=95%. The interior of an airtight chamber 13 is heated at >=1020 deg.C with a heater 11 to carry out the crystal growth while rotating the seed crystal 2.

5. 发明专利

JP2001101930A OXIDE SUPERCONDUCTING LAMINATED-SUBSTRATE AND MANUFACTURING METHOD THEREFOR AND MANUFACTURING METHOD FOR SUPERCONDUCTING INTEGRATED CIRCUIT 失效
公开(公告)号：JP2001101930A
公开(公告)日：2001-04-13
申请号：JP27761699
申请日：1999-09-29
申请人： INT SUPERCONDUCTIVITY TECH , ISHIKAWAJIMA HARIMA HEAVY IND , FUJITSU LTD , SUMITOMO ELECTRIC INDUSTRIES
发明人： IZUMI TERUO , KOYAMA SATOSHI , SHIOBARA TORU , TANAKA SHOJI , ENOMOTO YOICHI , EGAMI MASAHIRO , SUZUKI HIDEO , IIYAMA MICHITOMO
IPC分类号： H01B5/14 , H01L39/02 , H01L39/24
摘要： PROBLEM TO BE SOLVED: To provide an oxide superconducting crystalline substrate or a dielectric substrate used as substrate for electronic device, which is provided with an insulating film and a conductive film for circuit, having high flatness and high crystallinity, and to perform at least one of the followings: to avoid cracks on the oxide superconducting crystalline substrate due to a heat treatment performed during the formation of the insulating film and the conductive film and to enable connections between electrodes and wires provided on the upper and lower sides of substrates easily. SOLUTION: An oxide superconducting laminated substrate 1 comprises an oxide superconducting crystalline substrate 3 with a high flatness and a high crystallinity and a reinforcing crystalline substrate 1 with high strength, wherein the substrate 3 is bonded to the substrate 1 through a thermal application.

6. 发明专利

JP2003121076A ATMOSPHERE CONTROL TYPE HEAT TREATING FURNACE 审中-公开
公开(公告)号：JP2003121076A
公开(公告)日：2003-04-23
申请号：JP2001314737
申请日：2001-10-12
申请人： INT SUPERCONDUCTIVITY TECH , SHOWA ELECTRIC WIRE & CABLE CO , ISHIKAWAJIMA HARIMA HEAVY IND
发明人： HONJO AKISATO , EGAMI MASAHIRO , IZUMI TERUO , SHIOBARA TORU
IPC分类号： C03B23/043 , F27B9/04 , F27B9/30 , F27D7/02
摘要： PROBLEM TO BE SOLVED: To provide an atmosphere control type heat treating furnace capable of forming a stable atmosphere in the axial direction of a tubular furnace and having a simple structure. SOLUTION: A furnace tube is formed into a double structure, four partitioning plates are provided between an outer tube and an inner tube, and two sets of a gas feed passage and a gas exhaust passage are formed. The gas feed passage is provided with multiple gas outflow holes, while the gas exhaust passage is provided with multiple gas inflow holes. Different gases are fed to the gas feed passage and the gas exhaust passage at different velocities respectively, a pressure difference is formed between the gas outflow hole and the gas inflow hole, and the different gases are uniformly passed perpendicularly to the axial direction of the furnace tube respectively.

7. 发明专利

JP2001080994A OXIDE SUPERCONDUCTING LAMINATED SUBSTRATE AND ITS MANUFACTURING PROCESS 失效
公开(公告)号：JP2001080994A
公开(公告)日：2001-03-27
申请号：JP25230999
申请日：1999-09-06
申请人： INT SUPERCONDUCTIVITY TECH , ISHIKAWAJIMA HARIMA HEAVY IND
发明人： IZUMI TERUO , KOYAMA SATOSHI , SHIOBARA TORU , TANAKA SHOJI , EGAMI MASAHIRO
IPC分类号： C30B29/22 , H01L39/02 , H01L39/24
摘要： PROBLEM TO BE SOLVED: To provide a high strength oxide superconducting laminated substrate which has an oxide superconducting crystal substrate that is provided with high flatness and high crystal properties and used as an electronic device substrate for forming on it films such as insulation film and electrically conductive film for a circuit, and is capable of preventing cracks due to heat treatment in the formation of such an insulating film or conductive film on the oxide superconducting crystal substrate, from being caused in the crystal substrate. SOLUTION: This oxide superconducting laminated substrate 1 is manufactured by joining an oxide superconducting crystal substrate 3 having high flatness and high crystal properties to a high strength reinforcing crystal substrate 5, while interposing between them, an intermediate layer 7 consisting of a material having a lower melting point than that of the constituent oxide superconducting single crystal or polycrystal of the oxide superconducting crystal substrate 3.

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