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1. 发明专利

JP2001101930A OXIDE SUPERCONDUCTING LAMINATED-SUBSTRATE AND MANUFACTURING METHOD THEREFOR AND MANUFACTURING METHOD FOR SUPERCONDUCTING INTEGRATED CIRCUIT 失效
公开(公告)号：JP2001101930A
公开(公告)日：2001-04-13
申请号：JP27761699
申请日：1999-09-29
申请人： INT SUPERCONDUCTIVITY TECH , ISHIKAWAJIMA HARIMA HEAVY IND , FUJITSU LTD , SUMITOMO ELECTRIC INDUSTRIES
发明人： IZUMI TERUO , KOYAMA SATOSHI , SHIOBARA TORU , TANAKA SHOJI , ENOMOTO YOICHI , EGAMI MASAHIRO , SUZUKI HIDEO , IIYAMA MICHITOMO
IPC分类号： H01B5/14 , H01L39/02 , H01L39/24
摘要： PROBLEM TO BE SOLVED: To provide an oxide superconducting crystalline substrate or a dielectric substrate used as substrate for electronic device, which is provided with an insulating film and a conductive film for circuit, having high flatness and high crystallinity, and to perform at least one of the followings: to avoid cracks on the oxide superconducting crystalline substrate due to a heat treatment performed during the formation of the insulating film and the conductive film and to enable connections between electrodes and wires provided on the upper and lower sides of substrates easily. SOLUTION: An oxide superconducting laminated substrate 1 comprises an oxide superconducting crystalline substrate 3 with a high flatness and a high crystallinity and a reinforcing crystalline substrate 1 with high strength, wherein the substrate 3 is bonded to the substrate 1 through a thermal application.

2. 发明专利

JP2001080994A OXIDE SUPERCONDUCTING LAMINATED SUBSTRATE AND ITS MANUFACTURING PROCESS 失效
公开(公告)号：JP2001080994A
公开(公告)日：2001-03-27
申请号：JP25230999
申请日：1999-09-06
申请人： INT SUPERCONDUCTIVITY TECH , ISHIKAWAJIMA HARIMA HEAVY IND
发明人： IZUMI TERUO , KOYAMA SATOSHI , SHIOBARA TORU , TANAKA SHOJI , EGAMI MASAHIRO
IPC分类号： C30B29/22 , H01L39/02 , H01L39/24
摘要： PROBLEM TO BE SOLVED: To provide a high strength oxide superconducting laminated substrate which has an oxide superconducting crystal substrate that is provided with high flatness and high crystal properties and used as an electronic device substrate for forming on it films such as insulation film and electrically conductive film for a circuit, and is capable of preventing cracks due to heat treatment in the formation of such an insulating film or conductive film on the oxide superconducting crystal substrate, from being caused in the crystal substrate. SOLUTION: This oxide superconducting laminated substrate 1 is manufactured by joining an oxide superconducting crystal substrate 3 having high flatness and high crystal properties to a high strength reinforcing crystal substrate 5, while interposing between them, an intermediate layer 7 consisting of a material having a lower melting point than that of the constituent oxide superconducting single crystal or polycrystal of the oxide superconducting crystal substrate 3.

3. 发明专利

DE69503305T2 未知
公开(公告)号：DE69503305T2
公开(公告)日：1999-03-25
申请号：DE69503305
申请日：1995-04-13
申请人： SUMITOMO ELECTRIC INDUSTRIES , INT SUPERCONDUCTIVITY TECH
发明人： NAMIKAWA YASUO , YAMADA YASUJI , KOYAMA SATOSHI , SHIOHARA YUH , TANAKA SHOJI
IPC分类号： C30B9/00 , C30B15/00 , C30B15/12 , C30B29/22 , H01B13/00 , H01L21/208

4. 发明专利

DE69503305D1 未知
公开(公告)号：DE69503305D1
公开(公告)日：1998-08-13
申请号：DE69503305
申请日：1995-04-13
申请人： SUMITOMO ELECTRIC INDUSTRIES , INT SUPERCONDUCTIVITY TECH
发明人： NAMIKAWA YASUO , YAMADA YASUJI , KOYAMA SATOSHI , SHIOHARA YUH , TANAKA SHOJI
IPC分类号： C30B9/00 , C30B15/00 , C30B15/12 , C30B29/22 , H01B13/00 , H01L21/208

5. 发明专利

JPH11130596A RE123-BASED SINGLE CRYSTAL, RE123-BASED SUPERCONDUCTIVE SINGLE CRYSTAL, SUPERCONDUCTIVE DEVICE SUBSTRATE AND PRODUCTION OF OXIDE SINGLE CRYSTAL 失效
公开(公告)号：JPH11130596A
公开(公告)日：1999-05-18
申请号：JP29260397
申请日：1997-10-24
申请人： INT SUPERCONDUCTIVITY TECH , KANSAI ELECTRIC POWER CO
发明人： HATTORI OSAMU , KOYAMA SATOSHI , SHIOBARA TORU
IPC分类号： C01G1/00 , C01G3/00 , C30B29/22
摘要： PROBLEM TO BE SOLVED: To provide a method for producing RE123-based single crystal or the like, excellent in crystallinity, having definite single crystal composition before and after production of crystal, capable of continuously producing for a long time and simply controlling temperature. SOLUTION: This method for producing RE123-based single crystal comprises continuously pulling and growing RE123-based single crystal at solution surface temperature which is a temperature lower by 2-20 deg.C than peritectic crystallization temperature from the surface of solution obtained by dissolving a solution raw material such as 1 or 2 or more RE elements (RE element is Y, La, Nd, Sm, Eu, Gd, Ho or Yb) as a solute into solvent melt of the formula nBaO-mCuO in which (n/m) ratio is (3/7) to (4/5). In this case, the solution surface temperature in melting of solution raw material is set so as to be same as solution surface temperature in pulling up and growing and oxygen partial pressure in melting is set to be lower than oxygen partial pressure in pulling up and growing.

6. 发明专利

JPH11340534A OXIDE-BASED SUPERCONDUCTING DEVICE 失效
公开(公告)号：JPH11340534A
公开(公告)日：1999-12-10
申请号：JP24809098
申请日：1998-09-02
申请人： HITACHI LTD , INT SUPERCONDUCTIVITY TECH
发明人： USAGAWA TOSHIYUKI , BUN TAKEKUNI , KOYAMA SATOSHI , UTAGAWA TADASHI , TANABE KEIICHI
IPC分类号： H01L39/22 , H01L39/24
摘要： PROBLEM TO BE SOLVED: To substantially remove a grain boundary in a Josephson junction, by jointing a superconducting body to a normal conducting body in the single crystal grain of a substrate to make the Josephson junction. SOLUTION: A Josephson junction is formed on the YBCO single-crystal region (oxide-based superconducting body) of a substrate formed in a plane, and superconducting wirings 5, 6 and taking-out parts 7, 8 are formed on the YBCO single-crystal region. That is, a YBCO single-crystal in cut away at a (110) crystal plane direction in a wafer shape to remove the incompleteness of a YBCO single-crystal substrate 20' doped at 3 to 14% Zn, a grain of YBCFO 31 is grown homoeptaxially, and then the superconducting wiring 5, a YBCO layer 21 and a PCB 22 (normal conducting body) to be the underlayer superconducting layer 21 of Josephson junctions 300, 301 are formed. Also, an interlayer separating film 40 is formed over the whole surface, and then contact holes 9 are formed in the Josephson junctions 300, 301 to form the superconcuting wiring 6.

7. 发明专利

JPH08259394A PRODUCTION OF SUPERCONDUCTING OXIDE CRYSTAL 失效
公开(公告)号：JPH08259394A
公开(公告)日：1996-10-08
申请号：JP6631795
申请日：1995-03-24
申请人： ISHIKAWAJIMA HARIMA HEAVY IND , KOKUSAI CHODENDO SANGYO GIJUTS
发明人： YAMADA YASUSHI , KOYAMA SATOSHI , TAGAMI MINORU , KOSHIZUKA NAOKI , SHIOBARA TORU
IPC分类号： C01G1/00 , C01G3/00 , C30B29/22 , H01B12/00 , H01B13/00
摘要： PURPOSE: To provide a method for producing a superconducting oxide crystal, capable of continuously producing the crystal and controlling the physical properties of the crystal, such as the superconduction transition temperature, by producing the crystal having a Y1 Ba2 Cu3 O6+d type structure from a liquid phase which has a solid phase for supplying crystal-composing elements, contains the same composing elements as those of the crystal and is different in the composition. CONSTITUTION: The method for producing a superconducting oxide crystal is a solution method comprising rotating a rod 8 at a place apart from a solid phase 2 in a liquid phase 3 having the solid phase 2 on the bottom of a crucible 1 and simultaneously lifting the rod 8 to produce the superconducting oxide crystal 4. The structure of the superconducting oxide 4 in the same structure as a Y1 Ba2 Cu3 O6+x and has a composition: (Re1-x Prx )Ba2 Cu3 O6+d (Re is one or more kinds of elements selected from among Y, Nd, Sm, Eu, Gd, Dy, Ho, Er, Tm and Yb; 0

8. 发明专利

JPH07277894A METHOD FOR HOLDING MELT OF OXIDE AND PRODUCTION OF OXIDE CRYSTAL 失效
公开(公告)号：JPH07277894A
公开(公告)日：1995-10-24
申请号：JP7579294
申请日：1994-04-14
申请人： SUMITOMO ELECTRIC INDUSTRIES , ASAHI GLASS CO LTD , KOKUSAI CHODENDO SANGYO GIJUTS
发明人： NAMIKAWA YASUO , YAMADA YOUSHI , KOYAMA SATOSHI , SHIOBARA TORU , TANAKA SHOJI
IPC分类号： C30B9/00 , C30B15/00 , C30B15/12 , C30B29/22 , H01B13/00 , H01L21/208
摘要： PURPOSE:To stably hold the melt of an oxide system consisting of yttrium or lanthanoid elements, barium, copper and oxygen without allowing impurities to intrude therein at a prescribed temp. and to produce a large-sized oxide crystal having good quality therefrom. CONSTITUTION:The melt 23 of the oxide system is put into a first crucible 21 and the first crucible 21 is held in a second crucible 22. The first crucible 21 is composed of a material which is the oxide of one or '.2 elements constituting the melt, has a m. p. higher by >=10 deg.C than a melt holding temp., does not cause a structural phase transition up to a temp. higher by 10 deg.C than the melt holding temp. and is

9. 发明专利

JP2019004296A 光送信器、及びスキュー補償方法审中-公开
公开(公告)号：JP2019004296A
公开(公告)日：2019-01-10
申请号：JP2017117116
申请日：2017-06-14
申请人： FUJITSU LTD
发明人： NOMURA YOSHITAKA , KOYAMA SATOSHI , NAKAJIMA HISAO , AKIYAMA YUICHI , HOSHIDA GOJI
IPC分类号： H04B10/516 , G02F1/01 , H04B10/079
摘要：【課題】光通信の送信側でI軸とQ軸の間の送信スキューを精度良く補償する。【解決手段】マッハツェンダ型の変調器を有する光送信器は、前記変調器のI軸とQ軸に入力される信号として同振幅かつ同じ周波数の同相または逆相のスキュー調整用の信号を生成する信号生成部と、前記信号にスキュー調整を与えるスキュー調整部と、前記変調器に光を入射する光源と、前記スキュー調整用の信号で変調されて前記変調器から出力される光をモニタするモニタ回路と、モニタ光の電力を検出する電力検出部と、前記スキュー調整部のスキュー調整量を変化させながら、前記モニタ光の平均電力が最適レベルとなるときのスキュー調整量を最適なスキュー調整値として決定する制御部と、を有する。【選択図】図4

10. 发明专利

JP2003330445A Display device 审中-公开
标题翻译：显示设备
公开(公告)号：JP2003330445A
公开(公告)日：2003-11-19
申请号：JP2002140321
申请日：2002-05-15
申请人： Fujitsu Ltd , Fujitsu Peripherals Ltd , 富士通周辺機株式会社 , 富士通株式会社
发明人： KOYAMA SATOSHI
IPC分类号： H04N5/21 , G09G3/20 , G09G5/00
CPC分类号： G09G5/006 , G09G5/008
摘要： PROBLEM TO BE SOLVED: To provide a display device capable of outputting satisfactory pictures appropriately suppressing a noise signal which is superimposed on a video signal in accordance with its noise frequency component.
SOLUTION: This display device has a variable filter part 11 for eliminating the noise signal superimposed on the video signal and converts video signals into pictures to output and display them. The variable filter part 11 obtains the frequency component of the noise signal superimposed on the video signal to change a filter characteristic based on the obtained frequency component of the noise signal.
COPYRIGHT: (C)2004,JPO

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