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    • 1. 发明申请
    • METHOD AND SYSTEM FOR PROVIDING PROCESS TOOL CORRECTABLES USING AN OPTIMZED SAMPLING SCHEME WITH SMART INTERPOLATION
    • 使用优化采样方案与智能插值提供过程工具可修正性的方法和系统
    • WO2011103048A3
    • 2012-03-01
    • PCT/US2011024689
    • 2011-02-14
    • KLA TENCOR CORPIZIKSON PAVELKANDEL DANIELROBINSON JOHN
    • IZIKSON PAVELKANDEL DANIELROBINSON JOHN
    • H01L21/66H01L21/027
    • H01L22/20H01L2924/0002H01L2924/00
    • The present invention may include performing a first measurement on a wafer of a first lot of wafers via an omniscient sampling process, calculating a first set of process tool correctables utilizing one or more results of the measurement performed via an omniscient sampling process, randomly selecting a set of field sampling locations of the wafer of a first lot of wafers, calculating a second set of process tool correctables by applying an interpolation process to the randomly selected set of field sampling locations, wherein the interpolation process utilizes values from the first set of process tool correctables for the randomly selected set of field sampling locations in order to calculate correctables for fields of the wafer of the first lot not included in the set of randomly selected fields, and determining a sub-sampling scheme by comparing the first set of process tool correctables to the second set of correctables.
    • 本发明可以包括通过无所不在的采样处理在第一批晶片的晶片上进行第一测量,利用通过全方位采样过程执行的一个或多个测量结果来计算第一组处理工具校正值,随机选择 第一批晶片的晶片的一组场采样位置,通过对随机选择的一组场采样位置应用内插处理来计算第二组处理工具可校正值,其中所述内插处理利用来自第一组处理的值 用于随机选择的一组场采样位置的工具可校正,以便计算不包括在随机选择的场的集合中的第一批的晶片的场的可校正性,以及通过比较第一组处理工具来确定子采样方案 可纠正到第二组可纠正的。
    • 5. 发明申请
    • SCATTEROMETRY METROLOGY TARGET DESIGN OPTIMIZATION
    • 计量测量学目标设计优化
    • WO2010080732A3
    • 2010-10-07
    • PCT/US2010020046
    • 2010-01-04
    • KLA TENCOR CORPADEL MICHAEL EMANASSEN AMNONKANDEL DANIEL
    • ADEL MICHAEL EMANASSEN AMNONKANDEL DANIEL
    • H01L21/66
    • G03F7/70683G03F7/705G03F7/70633H01L22/12
    • A metrology target design may be optimized using inputs including metrology target design information, substrate information, process information, and metrology system information. Acquisition of a metrology signal with a metrology system may be modeled using the inputs to generate one or more optical characteristics of the metrology target. A metrology algorithm may be applied to the characteristics to determine a predicted accuracy and precision of measurements of the metrology target made by the metrology system. Part of the information relating to the metrology target design may be modified and the signal modeling and metrology algorithm may be repeated to optimize the accuracy and precision of the one or more measurements. The metrology target design may be displayed or stored after the accuracy and precision are optimized.
    • 度量目标设计可以使用包括度量衡目标设计信息,衬底信息,过程信息和度量衡系统信息的输入来优化。 采用计量系统采集计量信号可以使用输入来建模以产生计量目标的一个或多个光学特性。 计量算法可以应用于特征以确定由计量系统制造的计量目标的测量的预测精度和精度。 与计量目标设计有关的部分信息可能会被修改,信号建模和计量算法可能会重复,以优化一个或多个测量的准确度和精确度。 计量目标设计可以在精确度和精度得到优化之后显示或存储。
    • 6. 发明申请
    • MULTI-LAYER OVERLAY METROLOGY TARGET AND COMPLIMENTARY OVERLAY METROLOGY MEASUREMENT SYSTEMS
    • 多层叠加计量目标和综合覆盖度量度测量系统
    • WO2012018673A3
    • 2012-05-18
    • PCT/US2011045778
    • 2011-07-28
    • KLA TENCOR CORPKANDEL DANIELLEVINSKI VLADIMIRCOHEN GUY
    • KANDEL DANIELLEVINSKI VLADIMIRCOHEN GUY
    • H01L21/027
    • G03F7/70633G03F7/70683
    • A multi-layer overlay target for use in imaging based metrology is disclosed. The overlay target includes a plurality of target structures including three or more target structures, each target structure including a set of two or more pattern elements, wherein the target structures are configured to share a common center of symmetry upon alignment of the target structures, each target structure being invariant to N degree rotation about the common center of symmetry, wherein N is equal to or greater than 180 degrees, wherein each of the two or more pattern elements has an individual center of symmetry, wherein each of the two or more pattern elements of each target structure is invariant to M degree rotation about the individual center of symmetry, wherein M is equal to or greater than 180 degrees.
    • 公开了一种用于基于成像的计量学的多层覆盖目标。 覆盖目标包括包括三个或更多个目标结构的多个目标结构,每个目标结构包括一组两个或多个模式元素,其中目标结构被配置为在目标结构对准时共享公共对称中心,每个目标结构 目标结构相对于公共对称中心不变为N度旋转,其中N等于或大于180度,其中两个或更多个图案元素中的每一个具有单独的对称中心,其中两个或更多个图案 每个目标结构的元素对于单个对称中心的M度旋转是不变的,其中M等于或大于180度。
    • 9. 发明公开
    • 다층 오버레이 계측 타겟 및 상보적 오버레이 계측 측정 시스템
    • 多层覆盖计量目标和免费覆盖计量测量系统
    • KR20180026582A
    • 2018-03-12
    • KR20187006323
    • 2011-07-28
    • KLA TENCOR CORP
    • KANDEL DANIELLEVINSKI VLADIMIRCOHEN GUY
    • H01L21/027G03F7/20
    • G03F7/70633G03F7/70683
    • 촬상기반계측에서사용하기위한다층오버레이타겟이개시된다. 오버레이타겟은 3개이상의타겟구조물을포함한복수의타겟구조물을포함하고, 각타겟구조물은 2개이상의패턴요소들의집합을포함하며, 타겟구조물은타겟구조물의정렬시에공통대칭중심을공유하도록구성되고, 각타겟구조물은공통대칭중심에대한 N도(N도는 180도이상임) 회전에대하여불변체이며, 2개이상의패턴요소는각각개별적인대칭중심을갖고, 각타겟구조물의 2개이상의패턴요소들은각각개별적인대칭중심에대한 M도(M도는 180도이상임) 회전에대하여불변체이다.
    • 公开了用于基于成像的度量衡中的多层覆盖目标。 覆盖目标包括多个包括三个或更多个目标结构的目标结构,每个目标结构包括一组两个或更多个模式元素,其中目标结构被配置为在目标结构对齐时共享对称的共同中心,每个 目标结构围绕所述公共对称中心不变为N度旋转,其中N等于或大于180度,其中所述两个或更多个图案元件中的每一个具有单独的对称中心,其中所述两个或更多个图案中的每一个 每个目标结构的元素对于围绕单个对称中心的M度旋转是不变的,其中M等于或大于180度。