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1. 发明申请

WO2010080732A3 SCATTEROMETRY METROLOGY TARGET DESIGN OPTIMIZATION 审中-公开
标题翻译：计量测量学目标设计优化
公开(公告)号：WO2010080732A3
公开(公告)日：2010-10-07
申请号：PCT/US2010020046
申请日：2010-01-04
申请人： KLA TENCOR CORP , ADEL MICHAEL E , MANASSEN AMNON , KANDEL DANIEL
发明人： ADEL MICHAEL E , MANASSEN AMNON , KANDEL DANIEL
IPC分类号： H01L21/66
CPC分类号： G03F7/70683 , G03F7/705 , G03F7/70633 , H01L22/12
摘要： A metrology target design may be optimized using inputs including metrology target design information, substrate information, process information, and metrology system information. Acquisition of a metrology signal with a metrology system may be modeled using the inputs to generate one or more optical characteristics of the metrology target. A metrology algorithm may be applied to the characteristics to determine a predicted accuracy and precision of measurements of the metrology target made by the metrology system. Part of the information relating to the metrology target design may be modified and the signal modeling and metrology algorithm may be repeated to optimize the accuracy and precision of the one or more measurements. The metrology target design may be displayed or stored after the accuracy and precision are optimized.
摘要翻译：度量目标设计可以使用包括度量衡目标设计信息，衬底信息，过程信息和度量衡系统信息的输入来优化。采用计量系统采集计量信号可以使用输入来建模以产生计量目标的一个或多个光学特性。计量算法可以应用于特征以确定由计量系统制造的计量目标的测量的预测精度和精度。与计量目标设计有关的部分信息可能会被修改，信号建模和计量算法可能会重复，以优化一个或多个测量的准确度和精确度。计量目标设计可以在精确度和精度得到优化之后显示或存储。

2. 发明申请

WO2011028807A3 METROLOGY SYSTEMS AND METHODS 审中-公开
标题翻译：计量系统与方法
公开(公告)号：WO2011028807A3
公开(公告)日：2011-06-16
申请号：PCT/US2010047539
申请日：2010-09-01
申请人： KLA TENCOR CORP , KANDEL DANIEL , LEVINSKI VLADIMIR , SVIZHER ALEXANDER , SELIGSON JOEL , HILL ANDREW , BACHAR OHAD , MANASSEN AMNON , CHUANG YUNG-HO ALEX , SELA ILAN , MARKOWITZ MOSHE , NEGRI DARIA , ROTEM EFRAIM
发明人： KANDEL DANIEL , LEVINSKI VLADIMIR , SVIZHER ALEXANDER , SELIGSON JOEL , HILL ANDREW , BACHAR OHAD , MANASSEN AMNON , CHUANG YUNG-HO ALEX , SELA ILAN , MARKOWITZ MOSHE , NEGRI DARIA , ROTEM EFRAIM
IPC分类号： H01L21/66
CPC分类号： G01N21/47 , G01B11/02 , G01B11/0641 , G01B2210/56 , G01N21/211 , G01N21/9501 , G01N21/956 , G01N2021/4792 , G01N2201/06113 , G01N2201/105 , G03F7/70625 , G03F7/70633
摘要： Various metrology systems and methods are provided.
摘要翻译：提供了各种计量系统和方法。

3. 发明申请

WO2011159725A3 DISCRETE POLARIZATION SCATTEROMETRY 审中-公开
标题翻译：离散极化分析
公开(公告)号：WO2011159725A3
公开(公告)日：2012-04-26
申请号：PCT/US2011040389
申请日：2011-06-14
申请人： KLA TENCOR CORP , HILL ANDREW V , MANASSEN AMNON , KANDEL DANIEL , LEVINSKI VLADIMIR , SELIGSON JOEL , SVIZHER ALEXANDER , WANG DAVID Y , ROTTER LAWRENCE D , DE VEER JOHANNES D
发明人： HILL ANDREW V , MANASSEN AMNON , KANDEL DANIEL , LEVINSKI VLADIMIR , SELIGSON JOEL , SVIZHER ALEXANDER , WANG DAVID Y , ROTTER LAWRENCE D , DE VEER JOHANNES D
IPC分类号： H01L21/027 , H01L21/66
CPC分类号： G02B27/141 , G01N21/474 , G01N21/4788 , G01N2021/4792 , G02B27/145 , G03F7/70633
摘要： Systems and methods for discrete polarization scatterometry are provided. One embodiment relates to an optical subsystem of a scatterometer. The optical subsystem includes one or more light sources configured to produce light having different polarizations. The optical subsystem also includes a polarizing beam splitter configured to separate the light into two different light beams having orthogonal and mutually exclusive polarizations. The optical subsystem further includes one or more second optical elements configured to control which one of the two different light beams illuminates the wafer during measurements. The optical subsystem also includes a detection subsystem configured to separately detect two different scattered light beams resulting from illumination of the wafer. The two different scattered light beams have orthogonal and mutually exclusive polarizations. All optical surfaces of the optical subsystem used for the measurements are stationary during the measurements.
摘要翻译：提供了离散极化散射法的系统和方法。一个实施例涉及一种散射仪的光学子系统。光学子系统包括被配置为产生具有不同偏振的光的一个或多个光源。光学子系统还包括偏振分束器，其被配置为将光分离成具有正交和相互排斥的极化的两个不同光束。光学子系统还包括一个或多个第二光学元件，其被配置为在测量期间控制两个不同光束中的哪一个照射晶片。光学子系统还包括被配置为分别检测由晶片的照明产生的两个不同散射光束的检测子系统。两个不同的散射光束具有正交和相互排斥的偏振。用于测量的光学子系统的所有光学表面在测量期间是静止的。

4. 发明申请

WO2009143200A3 SUBSTRATE MATRIX TO DECOUPLE TOOL AND PROCESS EFFECTS 审中-公开
标题翻译：基板矩阵对工具和过程效应
公开(公告)号：WO2009143200A3
公开(公告)日：2010-03-04
申请号：PCT/US2009044594
申请日：2009-05-20
申请人： KLA TENCOR CORP , IZIKSON PAVEL , ADEL MICHAEL E , KANDEL DANIEL
发明人： IZIKSON PAVEL , ADEL MICHAEL E , KANDEL DANIEL
IPC分类号： H01L21/66
CPC分类号： G03F7/70641 , G05B19/41845 , G05B2219/32187 , G05B2219/36307 , H01L22/20 , Y02P90/16 , Y02P90/22
摘要： A method of characterizing a process by selecting the process to characterize, selecting a parameter of the process to characterize, determining values of the parameter to use in a test matrix, specifying an eccentricity for the test matrix, selecting test structures to be created in cells on a substrate, processing the substrate through the process using in each cell the value of the parameter as determined by the eccentric test matrix, measuring a property of the test structures in the cells, and developing a correlation between the parameter and the property.
摘要翻译：一种通过选择表征过程来表征过程的方法，选择过程的参数来表征，确定在测试矩阵中使用的参数的值，指定测试矩阵的偏心度，选择要在单元格中创建的测试结构在基板上，通过在每个单元中使用由偏心测试矩阵确定的参数值来处理基板，测量单元中的测试结构的性质，以及发展参数与特性之间的相关性。

5. 发明申请

WO2011103048A3 METHOD AND SYSTEM FOR PROVIDING PROCESS TOOL CORRECTABLES USING AN OPTIMZED SAMPLING SCHEME WITH SMART INTERPOLATION 审中-公开
标题翻译：使用优化采样方案与智能插值提供过程工具可修正性的方法和系统
公开(公告)号：WO2011103048A3
公开(公告)日：2012-03-01
申请号：PCT/US2011024689
申请日：2011-02-14
申请人： KLA TENCOR CORP , IZIKSON PAVEL , KANDEL DANIEL , ROBINSON JOHN
发明人： IZIKSON PAVEL , KANDEL DANIEL , ROBINSON JOHN
IPC分类号： H01L21/66 , H01L21/027
CPC分类号： H01L22/20 , H01L2924/0002 , H01L2924/00
摘要： The present invention may include performing a first measurement on a wafer of a first lot of wafers via an omniscient sampling process, calculating a first set of process tool correctables utilizing one or more results of the measurement performed via an omniscient sampling process, randomly selecting a set of field sampling locations of the wafer of a first lot of wafers, calculating a second set of process tool correctables by applying an interpolation process to the randomly selected set of field sampling locations, wherein the interpolation process utilizes values from the first set of process tool correctables for the randomly selected set of field sampling locations in order to calculate correctables for fields of the wafer of the first lot not included in the set of randomly selected fields, and determining a sub-sampling scheme by comparing the first set of process tool correctables to the second set of correctables.
摘要翻译：本发明可以包括通过无所不在的采样处理在第一批晶片的晶片上进行第一测量，利用通过全方位采样过程执行的一个或多个测量结果来计算第一组处理工具校正值，随机选择第一批晶片的晶片的一组场采样位置，通过对随机选择的一组场采样位置应用内插处理来计算第二组处理工具可校正值，其中所述内插处理利用来自第一组处理的值用于随机选择的一组场采样位置的工具可校正，以便计算不包括在随机选择的场的集合中的第一批的晶片的场的可校正性，以及通过比较第一组处理工具来确定子采样方案可纠正到第二组可纠正的。

6. 发明申请

WO2012018674A3 OPTICS SYMMETRIZATION FOR METROLOGY 审中-公开
标题翻译： OPTICS SYMPETRIZATION FOR METROLOGY
公开(公告)号：WO2012018674A3
公开(公告)日：2012-05-18
申请号：PCT/US2011045784
申请日：2011-07-28
申请人： KLA TENCOR CORP , MANASSEN AMMON , KANDEL DANIEL , BARUCH MOSHE , SELIGSON JOEL , SVIZHER ALEXANDER , COHEN GUY , ROTEM EFRAIM , BACHAR OHAD , NEGRI DARIA , SAPIENS NOAM
发明人： MANASSEN AMMON , KANDEL DANIEL , BARUCH MOSHE , SELIGSON JOEL , SVIZHER ALEXANDER , COHEN GUY , ROTEM EFRAIM , BACHAR OHAD , NEGRI DARIA , SAPIENS NOAM
IPC分类号： H01L21/027
CPC分类号： G03F7/70633 , G01N21/55 , G03F7/70616
摘要： The present invention includes an illumination source, at least one illumination symmetrization module (ISM) configured to symmetrize at least a portion of light emanating from the illumination source, a first beam splitter configured to direct a first portion of light processed by the ISM along an object path to a surface of one or more specimens and a second portion of light processed by the ISM along a reference path, and a detector disposed along a primary optical axis, wherein the detector is configured to collect a portion of light reflected from the surface of the one or more specimens.
摘要翻译：本发明包括照明源，至少一个照明对称化模块（ISM），被配置为对来自照明源发出的光的至少一部分进行对称;第一分束器，被配置为将由ISM处理的光的第一部分沿着一个或多个样本的表面的物体路径和沿着基准路径由ISM处理的光的第二部分以及沿着主光轴布置的检测器，其中检测器被配置为收集从表面反射的光的一部分的一个或多个标本。

7. 发明申请

WO2012018673A3 MULTI-LAYER OVERLAY METROLOGY TARGET AND COMPLIMENTARY OVERLAY METROLOGY MEASUREMENT SYSTEMS 审中-公开
标题翻译：多层叠加计量目标和综合覆盖度量度测量系统
公开(公告)号：WO2012018673A3
公开(公告)日：2012-05-18
申请号：PCT/US2011045778
申请日：2011-07-28
申请人： KLA TENCOR CORP , KANDEL DANIEL , LEVINSKI VLADIMIR , COHEN GUY
发明人： KANDEL DANIEL , LEVINSKI VLADIMIR , COHEN GUY
IPC分类号： H01L21/027
CPC分类号： G03F7/70633 , G03F7/70683
摘要： A multi-layer overlay target for use in imaging based metrology is disclosed. The overlay target includes a plurality of target structures including three or more target structures, each target structure including a set of two or more pattern elements, wherein the target structures are configured to share a common center of symmetry upon alignment of the target structures, each target structure being invariant to N degree rotation about the common center of symmetry, wherein N is equal to or greater than 180 degrees, wherein each of the two or more pattern elements has an individual center of symmetry, wherein each of the two or more pattern elements of each target structure is invariant to M degree rotation about the individual center of symmetry, wherein M is equal to or greater than 180 degrees.
摘要翻译：公开了一种用于基于成像的计量学的多层覆盖目标。覆盖目标包括包括三个或更多个目标结构的多个目标结构，每个目标结构包括一组两个或多个模式元素，其中目标结构被配置为在目标结构对准时共享公共对称中心，每个目标结构目标结构相对于公共对称中心不变为N度旋转，其中N等于或大于180度，其中两个或更多个图案元素中的每一个具有单独的对称中心，其中两个或更多个图案每个目标结构的元素对于单个对称中心的M度旋转是不变的，其中M等于或大于180度。

8. 发明申请

WO2011159625A3 ADVANCED PROCESS CONTROL OPTIMIZATION 审中-公开
标题翻译：高级过程控制优化
公开(公告)号：WO2011159625A3
公开(公告)日：2012-04-05
申请号：PCT/US2011040216
申请日：2011-06-13
申请人： KLA TENCOR CORP , CHOI DONGSUB , WIDMANN AMIR , KANDEL DANIEL , TIEN DAVID
发明人： CHOI DONGSUB , WIDMANN AMIR , KANDEL DANIEL , TIEN DAVID
IPC分类号： H01L21/027
CPC分类号： G03F7/70525
摘要： A method for automatic process control (APC) performance monitoring may include, but is not limited to: computing one or more APC performance indicators for one or more production lots of semiconductor devices; and displaying a mapping of the one or more APC performance indicators to the one or more production lots of semiconductor devices.
摘要翻译：用于自动过程控制（APC）性能监控的方法可以包括但不限于：计算一个或多个半导体器件生产批次的一个或多个APC性能指标; 以及将所述一个或多个APC性能指示符的映射显示给所述一个或多个半导体器件的生产批次。

9. 发明申请

WO2007053376A2 METHODS AND APPARATUS FOR DESIGNING AND USING MICRO-TARGETS IN OVERLAY METROLOGY 审中-公开
标题翻译：用于设计和使用覆盖层计量中的微目标的方法和装置
公开(公告)号：WO2007053376A2
公开(公告)日：2007-05-10
申请号：PCT/US2006041514
申请日：2006-10-23
申请人： KLA TENCOR TECH CORP , LEVINSKI VLADIMIR , ADEL MICHAEL E , FROMMER AVIV , KANDEL DANIEL
发明人： LEVINSKI VLADIMIR , ADEL MICHAEL E , FROMMER AVIV , KANDEL DANIEL
IPC分类号： H01L23/58 , H01L21/66
CPC分类号： H01L23/544 , G03F7/70633 , H01L22/12 , H01L2223/54453 , H01L2223/5448 , H01L2924/0002 , H01L2924/00
摘要： Methods and apparatus for fabricating a semiconductor die including several target structures. A first layer is formed that includes one or more line or trench structures that extend in a first direction. A second layer is formed that includes one or more line or trench structures that extend in a second direction that is perpendicular to the first structure, such that a projection of the target structure along the first direction is independent of the second direction and a projection of the target structure along the second direction is independent of the first direction. A target structure and a method for generating a calibration curve are also described.
摘要翻译：用于制造包括几个目标结构的半导体管芯的方法和装置。形成第一层，其包括在第一方向上延伸的一个或多个线或沟槽结构。形成第二层，其包括在垂直于第一结构的第二方向上延伸的一个或多个线或沟槽结构，使得目标结构沿着第一方向的突起独立于第二方向和投影沿着第二方向的目标结构与第一方向无关。还描述了用于产生校准曲线的目标结构和方法。

10. 发明申请

WO2005079498A3 CONTINUOUSLY VARYING OFFSET MARK AND METHODS OF DETERMINING OVERLAY 审中-公开
标题翻译：连续不断变化的标记和确定覆盖方法
公开(公告)号：WO2005079498A3
公开(公告)日：2006-08-03
申请号：PCT/US2005005253
申请日：2005-02-17
申请人： KLA TENCOR TECH CORP , ADEL MICHAEL E , SELIGSON JOEL L , KANDEL DANIEL
发明人： ADEL MICHAEL E , SELIGSON JOEL L , KANDEL DANIEL
IPC分类号： G01B11/00 , G03F7/00 , G03F7/20 , H01L21/66 , H01L21/76 , H01L23/544
CPC分类号： G03F7/70683 , B82Y10/00 , B82Y40/00 , G03F7/0002 , G03F7/70633 , H01L22/12
摘要： The present invention relates to overlay marks and methods for determining overlay error. One aspect of the present invention relates to a continuously varying offset mark. The continuously varying offset mark is a single mark that includes over laid periodic structures, which have offsets that vary as a function of position. By way of example, the periodic structures may correspond to gratings with different values of a grating characteristic such as pitch. Another aspect of the present invention relates to methods for determining overlay error from the continuously varying offset mark. The method generally includes determining the center of symmetry of the continuously varying offset mark and comparing it to the geometric center of the mark. If there is zero overlay, the center of symmetry tends to coincide with the geometric center of the mark. If overlay is non zero (e.g., misalignment between two layers), the center of symmetry is displaced from the geometric center of the mark. The displacement in conjunction with the preset gain of the continuously varying offset mark is used to calculate the overlay error.
摘要翻译：本发明涉及用于确定覆盖误差的覆盖标记和方法。本发明的一个方面涉及连续变化的偏移标记。连续变化的偏移标记是单个标记，其包括覆盖周期性结构，其具有作为位置的函数而变化的偏移。作为示例，周期性结构可以对应于具有诸如间距的光栅特性的不同值的光栅。本发明的另一方面涉及用于从连续变化的偏移标记确定覆盖误差的方法。该方法通常包括确定连续变化的偏移标记的对称中心并将其与标记的几何中心进行比较。如果零覆盖，则对称中心倾向于与标记的几何中心一致。如果覆盖层不为零（例如，两层之间的未对准），则对称中心从标记的几何中心位移。结合连续变化的偏移标记的预设增益的位移用于计算重叠误差。

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