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1. 发明专利

JP2007207737A Electron beam dose control for scanning electron microscopy and critical dimension measurement equipment 审中-公开
标题翻译：用于扫描电子显微镜和关键尺寸测量设备的电子束控制
公开(公告)号：JP2007207737A
公开(公告)日：2007-08-16
申请号：JP2006071831
申请日：2006-03-15
申请人： Kla-Tencor Corp , クラ−テンコールコーポレイション
发明人： RICHARDSON NEIL , ASKARY FARID , CONCINA STEFANO E , MONAHAN KEVIN M , ADLER DAVID L
IPC分类号： H01J37/20 , H01J37/28 , H01J37/147
CPC分类号： H01J37/28 , H01J2237/004 , H01J2237/2817
摘要： PROBLEM TO BE SOLVED: To provide a system and method for controlling electron exposure on image specimens by adjusting a raster scan area in-between scan frame cycles.
SOLUTION: A small, zoomed-in, scan area and the surrounding area are flooded with positive charge for a number of frame cycles between scan frames to reduce the voltage differential between the scan area and surrounding area, thereby reducing the positive charge build-up which tends to obscure small features in scanned images. The peak current into a pixel element on the specimen is reduced by scanning the beam with a line period that is very short compared to regular video. Frames of image data may further be acquired non-sequentially, in arbitrarily programmable patterns. Alternatively, an inert gas can be injected into the scanning electron microscope at the point where the electron beam impinges the specimen to neutralize a charge build-up on the specimen by the ionization of the inert gas by the electron beam.
COPYRIGHT: (C)2007,JPO&INPIT
摘要翻译：要解决的问题：提供通过调整扫描帧周期之间的光栅扫描区域来控制图像样本上的电子曝光的系统和方法。
解决方案：扫描区域之间的一个小的，放大的扫描区域和周围区域充满了正电荷，以减少扫描区域和周围区域之间的电压差，从而减少正电荷这种积累倾向于掩盖扫描图像中的小特征。通过以与常规视频相比非常短的线周期扫描光束来减小进入样品中的像素元件的峰值电流。图像数据的帧可以以任意可编程的模式进一步非依次获取。或者，可以在电子束照射样品的点处将惰性气体注入到扫描电子显微镜中，以通过电子束电离惰性气体来中和样品上的电荷积累。版权所有（C）2007，JPO＆INPIT

2. 发明申请

WO0180304A8 IMPROVED TEST STRUCTURES AND METHODS FOR INSPECTING AND UTILIZING THE SAME 审中-公开
标题翻译：改进的检查和使用它们的测试结构和方法
公开(公告)号：WO0180304A8
公开(公告)日：2001-12-27
申请号：PCT/US0034086
申请日：2000-12-14
申请人： KLA TENCOR CORP , SATYA AKELLA V S , PINTO GUSTAVO A , ADLER DAVID L , LONG ROBERT THOMAS , RICHARDSON NEIL , WEINER KURT H , WALKER DAVID J , MANTALAS LYNDA C
发明人： SATYA AKELLA V S , PINTO GUSTAVO A , ADLER DAVID L , LONG ROBERT THOMAS , RICHARDSON NEIL , WEINER KURT H , WALKER DAVID J , MANTALAS LYNDA C
IPC分类号： H01L21/66 , H01L23/544
CPC分类号： H01L22/34 , H01L22/12 , H01L2924/0002 , H01L2924/00
摘要： A sample is inspected by moving to a first field associated with a first group of test structures, which are partially within the first field, which is scanned to determine whether there are any defects present. If defects are present a specific defect location is determined by repeatedly stepping to areas and scanning such areas within the first group of test structures. In a second method, a sample is scanned in a first direction and in a second direction at an angle to the first direction with at least one particle beam. The number of defects per area of the sample are found as a result of the first scan, and the position of one or more of the found defects is determined from the second scan. A semiconductor die includes test structures located entirely within a scanning area and only partially within the scanning area. The test structures are arranged so that a scan of the scanning area results in detection of defects outside of the scanning area.
摘要翻译：通过移动到与第一组测试结构相关联的第一场来检查样本，该第一场是部分地在第一场内，其被扫描以确定是否存在任何缺陷。如果存在缺陷，则通过反复步进到区域并扫描第一组测试结构内的这些区域来确定特定缺陷位置。在第二种方法中，使用至少一个粒子束，在第一方向和第二方向上以与第一方向成一定角度扫描样品。作为第一扫描的结果，发现样品的每个区域的缺陷数，并且从第二扫描确定发现的一个或多个缺陷的位置。半导体管芯包括完全位于扫描区域内并且仅部分地位于扫描区域内的测试结构。测试结构被布置成使得扫描区域的扫描导致检测到扫描区域外的缺陷。

3. 发明专利

AU5919498A Electron beam dose control for scanning electron microscopy and critical dimension measurement instruments 未知
公开(公告)号：AU5919498A
公开(公告)日：1998-08-07
申请号：AU5919498
申请日：1998-01-16
申请人： KLA TENCOR CORP
发明人： RICHARDSON NEIL , ASKARY FARID , CONCINA STEFANO E , MONAHAN KEVIN M , ADLER DAVID L
IPC分类号： H01J37/20 , H01J37/147 , H01J37/28
摘要： A system and method for controlling electron exposure on image specimens by adjusting a raster scan area in-between scan frame cycles. A small, zoomed-in, scan area and the surrounding area are flooded with positive charge for a number of frame cycles between scan frames to reduce the voltage differential between the scan area and surrounding area, thereby reducing the positive charge buildup which tends to obscure small features in scanned images. The peak current into a pixel element on the specimen is reduced by scanning the beam with a line period that is very short compared to regular video. Frames of image data may further be acquired non-sequentially, in arbitrarily programmable patterns. Alternatively, an inert gas can be injected into the scanning electron microscope at the point where the electron beam impinges the specimen to neutralize a charge build-up on the specimen by the ionization of the inert gas by the electron beam.

4. 发明申请

WO0180304A3 IMPROVED TEST STRUCTURES AND METHODS FOR INSPECTING AND UTILIZING THE SAME 审中-公开
标题翻译：改进的检查和使用它们的测试结构和方法
公开(公告)号：WO0180304A3
公开(公告)日：2003-05-15
申请号：PCT/US0034086
申请日：2000-12-14
申请人： KLA TENCOR CORP , SATYA AKELLA V S , PINTO GUSTAVO A , ADLER DAVID L , LONG ROBERT THOMAS , RICHARDSON NEIL , WEINER KURT H , WALKER DAVID J , MANTALAS LYNDA C
发明人： SATYA AKELLA V S , PINTO GUSTAVO A , ADLER DAVID L , LONG ROBERT THOMAS , RICHARDSON NEIL , WEINER KURT H , WALKER DAVID J , MANTALAS LYNDA C
IPC分类号： H01L21/66 , H01L23/544
CPC分类号： H01L22/34 , H01L22/12 , H01L2924/0002 , H01L2924/00
摘要： A sample is inspected by moving to a first field associated with a first group of test structures, which are partially within the first field, which is scanned to determine whether there are any defects present. If defects are present a specific defect location is determined by repeatedly stepping to areas and scanning such areas within the first group of test structures. In a second method, a sample is scanned in a first direction and in a second direction at an angle to the first direction with at least one particle beam. The number of defects per area of the sample are found as a result of the first scan, and the position of one or more of the found defects is determined from the second scan. A semiconductor die includes test structures located entirely within a scanning area and only partially within the scanning area. The test structures are arranged so that a scan of the scanning area results in detection of defects outside of the scanning area.
摘要翻译：通过移动到与第一组测试结构相关联的第一场来检查样本，该第一场是部分地在第一场内，其被扫描以确定是否存在任何缺陷。如果存在缺陷，则通过反复步进到区域并扫描第一组测试结构内的这些区域来确定特定缺陷位置。在第二种方法中，使用至少一个粒子束，在第一方向和第二方向上以与第一方向成一定角度扫描样品。作为第一扫描的结果，发现样品的每个区域的缺陷数，并且从第二扫描确定发现的一个或多个缺陷的位置。半导体管芯包括完全位于扫描区域内并且仅部分地位于扫描区域内的测试结构。测试结构被布置成使得扫描区域的扫描导致检测到扫描区域外的缺陷。

5. 发明申请

WO2010104799A3 SYSTEMS AND METHODS FOR DETERMINING ONE OR MORE CHARACTERISTICS OF A SPECIMEN USING RADIATION IN THE TERAHERTZ RANGE 审中-公开
标题翻译：用于确定在TERAHERTZ范围内使用辐射的样本的一个或多个特征的系统和方法
公开(公告)号：WO2010104799A3
公开(公告)日：2011-01-27
申请号：PCT/US2010026557
申请日：2010-03-08
申请人： KLA TENCOR CORP , LEVY ADY , NGAI SAMUEL , BEVIS CHRISTOPHER F , CONCINA STEFANO , FIELDEN JOHN , MIEHER WALTER , MUELLER DIETER , RICHARDSON NEIL , WACK DAN , WAGNER LARRY
发明人： LEVY ADY , NGAI SAMUEL , BEVIS CHRISTOPHER F , CONCINA STEFANO , FIELDEN JOHN , MIEHER WALTER , MUELLER DIETER , RICHARDSON NEIL , WACK DAN , WAGNER LARRY
IPC分类号： H01L21/66
CPC分类号： G01N21/9505 , G01N21/3581 , H01L22/12
摘要： Systems and methods for determining one or more characteristics of a specimen using radiation in the terahertz range are provided. One system includes an illumination subsystem configured to illuminate the specimen with radiation. The system also includes a detection subsystem configured to detect radiation propagating from the specimen in response to illumination of the specimen and to generate output responsive to the detected radiation. The detected radiation includes radiation in the terahertz range. In addition, the system includes a processor configured to determine the one or more characteristics of the specimen using the output.
摘要翻译：提供了使用太赫兹范围内的辐射来确定样本的一个或多个特征的系统和方法。一个系统包括被配置为用辐射照射样本的照明子系统。该系统还包括检测子系统，该检测子系统被配置为响应于样本的照射来检测从样本传播的辐射，并响应于检测到的辐射产生输出。检测到的辐射包括太赫兹范围内的辐射。另外，该系统包括配置成使用该输出来确定样本的一个或多个特性的处理器。

6. 发明申请

WO02075772A3 SIMULTANEOUS FLOODING AND INSPECTION FOR CHARGE CONTROL IN AN ELECTRON BEAM INSPECTION MACHINE 审中-公开
标题翻译：电子束检测机器同时进行充电控制的检测和检查
公开(公告)号：WO02075772A3
公开(公告)日：2003-03-06
申请号：PCT/US0208630
申请日：2002-03-19
申请人： KLA TENCOR CORP
发明人： MCCORD MARK A , WALKER DAVID , RICHARDSON NEIL , PEI JUN
IPC分类号： G01N23/225 , G01Q30/20 , H01J37/28 , H01J37/02
CPC分类号： H01J37/28 , G01N23/225 , H01J2237/004 , H01J2237/2817
摘要： Disclosed are methods and apparatus for simultaneously flooding a sample 224 (e.g., a semiconductor wafer) to control charge and inspecting the sample 224. The apparatus 200 includes a charged particle beam generator (202-216) arranged to generate a charged particle beam 201 substantially towards a first portion of the sample and a flood gun 230 for generating a second beam towards a second portion of the sample. The second beam is generated substantially simultaneously with the inspection beam 201. The apparatus 200 further includes a detector 226 arranged to detect charged particles 205 originating from the sample portion. In a further implementation, the apparatus 200 further includes an image generator for generating an image of the first portion of the sample from the detected particles. In one embodiment, the sample is a semiconductor wafer. In a method aspect, a first area of a sample is flooded with a flood beam to control charge on a surface of the sample. A second area of the sample is inspected with an inspection beam. The second area comprises at least a portion of the first area flooded by the flood beam. The inspection beam moves in tandem with the flood beam. In another aspect of the present invention, methods and apparatus are provided for controlling the charge buildup of an area of the sample by an electrode 220 having a voltage applied to it and through which the flood beam and charged particles emitted from the area of the sample can pass.
摘要翻译：公开了用于同时淹没样品224（例如，半导体晶片）以控制电荷并检查样品224的方法和装置。装置200包括带电粒子束发生器（202-216），其被布置成基本上产生带电粒子束201 朝向样品的第一部分，以及用于朝向样品的第二部分产生第二束的喷枪230。第二光束基本上与检查光束201同时产生。装置200还包括检测器226，检测器226布置成检测源自样品部分的带电粒子205。在另一实施方式中，装置200还包括图像发生器，用于从检测到的颗粒生成样品的第一部分的图像。在一个实施例中，样品是半导体晶片。在方法方面，样品的第一区域用泛光束淹没以控制样品表面上的电荷。用检查梁检查样品的第二个区域。第二区域包括由洪水束淹没的第一区域的至少一部分。检查梁与洪水束一起移动。在本发明的另一方面，提供了一种方法和装置，用于通过具有施加到其上的电压的电极220来控制样品区域的电荷积累，通过该电极220从样品区域发射的泛光束和带电粒子可以通过

7. 发明专利

DE69841559D1 未知
公开(公告)号：DE69841559D1
公开(公告)日：2010-04-29
申请号：DE69841559
申请日：1998-01-16
申请人： KLA TENCOR CORP
发明人： RICHARDSON NEIL , ASKARY FARID , CONCINA STEFANO E , MONAHAN KEVIN M , ADLER DAVID L
IPC分类号： H01J37/20 , H01J37/28 , H01J37/147
摘要： A system and method for controlling electron exposure on image specimens by adjusting a raster scan area in-between scan frame cycles. A small, zoomed-in, scan area and the surrounding area are flooded with positive charge for a number of frame cycles between scan frames to reduce the voltage differential between the scan area and surrounding area, thereby reducing the positive charge buildup which tends to obscure small features in scanned images. The peak current into a pixel element on the specimen is reduced by scanning the beam with a line period that is very short compared to regular video. Frames of image data may further be acquired non-sequentially, in arbitrarily programmable patterns. Alternatively, an inert gas can be injected into the scanning electron microscope at the point where the electron beam impinges the specimen to neutralize a charge build-up on the specimen by the ionization of the inert gas by the electron beam.

8. 发明专利

AU2580401A Improved test structures and methods for inspecting and utilizing the same 未知
公开(公告)号：AU2580401A
公开(公告)日：2001-10-30
申请号：AU2580401
申请日：2000-12-14
申请人： KLA TENCOR CORP
发明人： SATYA AKELLA V S , PINTO GUSTAVO A , ADLER DAVID L , LONG ROBERT THOMAS , RICHARDSON NEIL , WEINER KURT H , WALKER DAVID J , MANTALAS LYNDA C
IPC分类号： H01L21/66 , H01L23/544

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