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1. 发明申请

WO2013014943A2 DIODE, SEMICONDUCTOR DEVICE, AND MOSFET 审中-公开
标题翻译：二极管，半导体器件和MOSFET
公开(公告)号：WO2013014943A2
公开(公告)日：2013-01-31
申请号：PCT/JP2012/004804
申请日：2012-07-27
申请人： KABUSHIKI KAISHA TOYOTA CHUO KENKYUSHO , TOYOTA JIDOSHA KABUSHIKI KAISHA , YAMASHITA, Yusuke , MACHIDA, Satoru , SUGIYAMA, Takahide , SAITO, Jun
发明人： YAMASHITA, Yusuke , MACHIDA, Satoru , SUGIYAMA, Takahide , SAITO, Jun
IPC分类号： H01L29/872 , H01L29/08
CPC分类号： H01L29/7813 , H01L27/0629 , H01L29/0619 , H01L29/0623 , H01L29/0642 , H01L29/0692 , H01L29/0696 , H01L29/08 , H01L29/0834 , H01L29/0847 , H01L29/0878 , H01L29/1095 , H01L29/1608 , H01L29/20 , H01L29/2003 , H01L29/36 , H01L29/407 , H01L29/41766 , H01L29/7393 , H01L29/7397 , H01L29/7806 , H01L29/7839 , H01L29/8611 , H01L29/872
摘要： Disclosed is a technique capable of reducing loss at the time of switching in a diode. A diode disclosed in the present specification includes a cathode electrode, a cathode region made of a first conductivity type semiconductor, a drift region made of a low concentration first conductivity type semiconductor, an anode region made of a second conductivity type semiconductor, an anode electrode made of metal, a barrier region formed between the drift region and the anode region and made of a first conductivity type semiconductor having a concentration higher than that of the drift region, and a pillar region formed so as to connect the barrier region to the anode electrode and made of a first conductivity type semiconductor having a concentration higher than that of the barrier region. The pillar region and the anode are connected through a Schottky junction.
摘要翻译：公开了能够在二极管切换时减少损耗的技术。本说明书中公开的二极管包括阴极电极，由第一导电类型半导体制成的阴极区域，由低浓度第一导电类型半导体制成的漂移区域，由第二导电类型半导体制成的阳极区域，阳极电极由金属制成的阻挡区域，形成在漂移区域和阳极区域之间并且由具有高于漂移区域的浓度的第一导电型半导体形成的势垒区域和形成为将阻挡区域连接到阳极的柱状区域电极，并且由具有比屏障区域的浓度高的浓度的第一导电型半导体制成。柱区域和阳极通过肖特基结连接。

2. 发明申请

WO2015133087A1 POWER SUPPLY SYSTEM HAVING TWO DC POWER SUPPLIES 审中-公开
标题翻译：具有两个直流电源的电源系统
公开(公告)号：WO2015133087A1
公开(公告)日：2015-09-11
申请号：PCT/JP2015/000899
申请日：2015-02-24
申请人： KABUSHIKI KAISHA TOYOTA CHUO KENKYUSHO , TOYOTA JIDOSHA KABUSHIKI KAISHA
发明人： GOTO, Shigeaki , ISHIGAKI, Masanori , TOMURA, Shuji , SUGIYAMA, Takahide , UMENO, Takaji , OKAMURA, Masaki , TAKAMATSU, Naoyoshi
IPC分类号： B60L11/18 , B60L15/00 , H02M3/158 , H02J1/10 , H02M1/00
CPC分类号： H02M3/158 , B60L11/1855 , B60L11/1866 , B60L15/007 , B60L2210/10 , H02M1/088 , H02M3/1584 , H02M2001/0003 , H02M2001/0077 , Y02T10/645 , Y02T10/7005 , Y02T10/705 , Y02T10/92
摘要： A power supply system (5) includes first and second DC power supplies (B1, B2) and a power converter (10) having first to fifth semiconductor elements (S1-S5) and first and second reactors (L1, L2). The first and fourth semiconductor elements (S1, S4) are electrically connected between a first node (N1) and a second node (N2), and a first power line (PL), respectively. Second and third switching elements (S2, S3) are electrically connected between the first node (N1) and the second node (N2), and a second power line (GL), respectively. A fifth switching element (S5) is electrically connected between the first node (N1) and the second node (N2). The first reactor (L1) is electrically connected in series with the first DC power supply (B1), between the first node (N1) and the second power line (GL). The second reactor (L2) is electrically connected in series with the second DC power supply (B2), between the first power line PL and the second node (N2).
摘要翻译：电源系统（5）包括第一和第二DC电源（B1，B2）和具有第一至第五半导体元件（S1-S5）和第一和第二电抗器（L1，L2）的功率转换器（10）。第一和第四半导体元件（S1，S4）分别电连接在第一节点（N1）和第二节点（N2）之间，以及第一电力线（PL）。第二和第三开关元件（S2，S3）分别电连接在第一节点（N1）和第二节点（N2）之间，以及第二电力线（GL）。第五开关元件（S5）电连接在第一节点（N1）和第二节点（N2）之间。第一电抗器（L1）在第一节点（N1）和第二电力线（GL）之间与第一直流电源（B1）串联电连接。第二电抗器（L2）在第一电力线PL和第二节点（N2）之间与第二直流电源（B2）串联电连接。

3. 发明申请

WO2005048352A1 TRENCH GATE FIELD EFFECT DEVICES 审中-公开
标题翻译： TRENCH门式场效应器件
公开(公告)号：WO2005048352A1
公开(公告)日：2005-05-26
申请号：PCT/JP2004/016792
申请日：2004-11-05
申请人： TOYOTA JIDOSHA KABUSHIKI KAISHA , HOTTA, Koji , KAWAJI, Sachiko , USUI, Masanori , SUGIYAMA, Takahide
发明人： HOTTA, Koji , KAWAJI, Sachiko , USUI, Masanori , SUGIYAMA, Takahide
IPC分类号： H01L29/739
CPC分类号： H01L29/7813 , H01L29/0696 , H01L29/1095 , H01L29/4236 , H01L29/4238 , H01L29/7397 , H01L2924/0002 , H01L2924/00
摘要： The present invention provides a technique for accumulating minority carriers in the body region, that is, the intermediate region interposed between the top region and the deep region, and thus increasing the concentration of minority carriers in the intermediate region. A semiconductor device has a top region (34) of a second conductivity type, a deep region (26) of the second conductivity type, and an intermediate region (28) of a first conductivity type for isolating the top region and the deep region. The semiconductor device further has a trench gate (32) facing a portion of the intermediate region via an insulating layer (33). The portion facing the trench gate isolates the top region and the deep region. The trench gate extends along a longitudinal direction. The width of the trench gate is not uniform along the longitudinal direction; instead the width of the trench gate varies along the longitudinal direction.
摘要翻译：本发明提供一种用于在身体区域中累积少数载流子的技术，即介于顶部区域和深部区域之间的中间区域，从而增加中间区域中的少数载流子的浓度。半导体器件具有第二导电类型的顶部区域（34），第二导电类型的深度区域（26）和用于隔离顶部区域和深度区域的第一导电类型的中间区域（28）。半导体器件还具有通过绝缘层（33）与中间区域的一部分相对的沟槽栅极（32）。面向沟槽栅的部分隔离了顶部区域和深部区域。沟槽门沿纵向方向延伸。沟槽栅的宽度沿纵向不均匀; 相反，沟槽栅的宽度沿着纵向方向变化。

4. 发明申请

WO2005062385A1 TRENCH GATE FIELD EFFECT DEVICES 审中-公开
标题翻译： TRENCH门式场效应器件
公开(公告)号：WO2005062385A1
公开(公告)日：2005-07-07
申请号：PCT/JP2004/018432
申请日：2004-12-03
申请人： TOYOTA JIDOSHA KABUSHIKI KAISHA , HOTTA, Koji , KAWAJI, Sachiko , SUGIYAMA, Takahide , USUI, Masanori
发明人： HOTTA, Koji , KAWAJI, Sachiko , SUGIYAMA, Takahide , USUI, Masanori
IPC分类号： H01L29/739
CPC分类号： H01L29/7397 , H01L29/0619 , H01L29/0634 , H01L29/1095 , H01L29/7813
摘要： The present invention relates to a technique for reducing the on-voltage of the semiconductor device by increasing the concentration of minority carriers in the deep region (26) and the intermediate region (28). A semiconductor device according to the invention comprises an electrode, a top region (36) of a second conductivity type connected to the electrode, a deep region of the second conductivity type, and an intermediate region of a first conductivity type connected to the electrode. A portion of the intermediate region isolates the top region and the deep region. The semiconductor device further comprises a gate electrode (32) facing the portion of the intermediate region via an insulating layer. The portion facing the gate electrode isolates the top region and the deep region. The semiconductor device according to the invention further comprises a barrier region (40) that is formed within the intermediate region and/or the top region.
摘要翻译：本发明涉及通过增加深区域（26）和中间区域（28）中的少数载流子的浓度来降低半导体器件的导通电压的技术。根据本发明的半导体器件包括电极，连接到电极的第二导电类型的顶部区域（36），第二导电类型的深区域和连接到电极的第一导电类型的中间区域。中间区域的一部分隔离顶部区域和深部区域。半导体器件还包括经由绝缘层面对中间区域的部分的栅电极（32）。面对栅电极的部分隔离顶部区域和深部区域。根据本发明的半导体器件还包括形成在中间区域和/或顶部区域内的阻挡区域（40）。

5. 发明公开

EP3073626A2 ELECTRIC POWER CONVERSION CIRCUIT SYSTEM 有权
标题翻译：电力转换电路系统
公开(公告)号：EP3073626A2
公开(公告)日：2016-09-28
申请号：EP16159317.3
申请日：2016-03-09
申请人： Toyota Jidosha Kabushiki Kaisha
发明人： TAKAGI, Kenichi , INOUE, Shuntaro , SUGIYAMA, Takahide , NAGASHITA, Kenichiro , NIIMI, Yoshitaka , OKAMURA, Masaki
IPC分类号： H02M3/335
CPC分类号： H02M3/33546 , H02M3/158 , H02M3/33561 , H02M3/33576 , H02M3/33584 , H02M2001/0032 , H02M2001/0048 , Y02B70/1491 , Y02B70/16
摘要： An electric power conversion circuit system for reducing core loss in a transformer particularly during light loading and improving conversion efficiency during light loading comprising an electric power conversion circuit composed of a primary side conversion circuit having a left arm and a right arm and a secondary side conversion circuit having a left arm and a right arm, and a control circuit for controlling switching of switching transistors of the first side conversion circuit and the secondary side conversion circuit. When the output voltage is at a relatively light load, the control circuit controls to change the duty of the transmitting side among the primary side conversion circuit and the secondary side conversion circuit and controls to change the half-bridge phase differences of the left arm and the right arm of the primary side conversion circuit and the secondary side conversion circuit, respectively.
摘要翻译：一种电力变换电路系统，特别是在轻负载时降低变压器的铁损，提高轻负载时的变换效率，其特征在于，具备由具有左臂和右臂的一次侧变换电路和二次侧变换电路构成的电力变换电路具有左臂和右臂的电路以及用于控制第一侧转换电路和次级侧转换电路的开关晶体管的切换的控制电路。当输出电压处于相对较轻的负载时，控制电路进行控制以改变初级侧转换电路和次级侧转换电路中的发送侧的占空比，并且进行控制以改变左臂的半桥相位差和初级侧转换电路和次级侧转换电路的右臂。

6. 发明授权

EP3073626B1 ELECTRIC POWER CONVERSION CIRCUIT SYSTEM 有权
公开(公告)号：EP3073626B1
公开(公告)日：2018-06-20
申请号：EP16159317.3
申请日：2016-03-09
申请人： Toyota Jidosha Kabushiki Kaisha
发明人： TAKAGI, Kenichi , INOUE, Shuntaro , SUGIYAMA, Takahide , NAGASHITA, Kenichiro , NIIMI, Yoshitaka , OKAMURA, Masaki
IPC分类号： H02M3/335 , H02M3/158
CPC分类号： H02M3/33546 , H02M3/158 , H02M3/33561 , H02M3/33576 , H02M3/33584 , H02M2001/0032 , H02M2001/0048 , Y02B70/1491 , Y02B70/16
摘要： An electric power conversion circuit system for reducing core loss in a transformer particularly during light loading and improving conversion efficiency during light loading comprising an electric power conversion circuit composed of a primary side conversion circuit having a left arm and a right arm and a secondary side conversion circuit having a left arm and a right arm, and a control circuit for controlling switching of switching transistors of the first side conversion circuit and the secondary side conversion circuit. When the output voltage is at a relatively light load, the control circuit controls to change the duty of the transmitting side among the primary side conversion circuit and the secondary side conversion circuit and controls to change the half-bridge phase differences of the left arm and the right arm of the primary side conversion circuit and the secondary side conversion circuit, respectively.

7. 发明授权

EP1760790B1 SEMICONDUCTOR DEVICE 有权
公开(公告)号：EP1760790B1
公开(公告)日：2019-04-03
申请号：EP05739273.0
申请日：2005-05-12
申请人： TOYOTA JIDOSHA KABUSHIKI KAISHA
发明人： KAWAJI, Sachiko , ISHIKO, Masayasu , SUGIYAMA, Takahide , USUI, Masanori , SAITO, Jun , HOTTA, Koji
IPC分类号： H01L29/739 , H01L29/10 , H01L29/40 , H01L29/06

8. 发明公开

EP3073626A3 ELECTRIC POWER CONVERSION CIRCUIT SYSTEM 有权
标题翻译： STROMWANDLUNGSSCHALTSYSTEM
公开(公告)号：EP3073626A3
公开(公告)日：2016-10-19
申请号：EP16159317.3
申请日：2016-03-09
申请人： Toyota Jidosha Kabushiki Kaisha
发明人： TAKAGI, Kenichi , INOUE, Shuntaro , SUGIYAMA, Takahide , NAGASHITA, Kenichiro , NIIMI, Yoshitaka , OKAMURA, Masaki
IPC分类号： H02M3/335 , H02M3/158
CPC分类号： H02M3/33546 , H02M3/158 , H02M3/33561 , H02M3/33576 , H02M3/33584 , H02M2001/0032 , H02M2001/0048 , Y02B70/1491 , Y02B70/16
摘要： An electric power conversion circuit system for reducing core loss in a transformer particularly during light loading and improving conversion efficiency during light loading comprising an electric power conversion circuit composed of a primary side conversion circuit having a left arm and a right arm and a secondary side conversion circuit having a left arm and a right arm, and a control circuit for controlling switching of switching transistors of the first side conversion circuit and the secondary side conversion circuit. When the output voltage is at a relatively light load, the control circuit controls to change the duty of the transmitting side among the primary side conversion circuit and the secondary side conversion circuit and controls to change the half-bridge phase differences of the left arm and the right arm of the primary side conversion circuit and the secondary side conversion circuit, respectively.
摘要翻译：一种电力转换电路系统，用于减轻变压器中的磁芯损耗，特别是在轻载时，提高了轻载时的转换效率，包括由具有左臂和右臂的一次侧转换电路和二次侧转换组成的电力转换电路具有左臂和右臂的电路，以及用于控制第一侧转换电路和次级侧转换电路的开关晶体管的开关的控制电路。当输出电压处于相对较轻的负载时，控制电路控制改变初级侧转换电路和次级侧转换电路中的发送侧的占空比，并且控制以改变左臂的半桥相位差初级侧转换电路的右臂和次级侧转换电路。

9. 发明公开

EP2234163A1 SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE DEVICE, AND METHOD OF MANUFACTURING TRENCH GATE 审中-公开
标题翻译：半导体器件及其制造方法，并产生沟槽栅方法
公开(公告)号：EP2234163A1
公开(公告)日：2010-09-29
申请号：EP08859002.1
申请日：2008-12-02
申请人： Toyota Jidosha Kabushiki Kaisha
发明人： AOI, Sachiko , SUGIYAMA, Takahide , SUZUKI, Takashi , SOENO, Akitaka , NISHIWAKI, Tsuyoshi
IPC分类号： H01L29/739 , H01L21/336 , H01L29/12 , H01L29/78
CPC分类号： H01L29/7397 , H01L29/0834 , H01L29/4236 , H01L29/42364 , H01L29/66348 , H01L29/66734
摘要： IGBT 10 comprises an n + -type emitter region 34, an n - -type drift region 26, a p-type body region 28 disposed between the emitter region 34 and the drift region 26, a trench gate 40 extending in the body region 28 from the emitter region 34 toward the drift region 26, and a projecting portion 60 of an insulating material being in contact with a surface of the trench gate 40. At least a part of the projecting portion 60 projects within the drift region 26.
摘要翻译： IGBT 10包括n +型发射极区域34，n - 型漂移区26中，发射极区34和漂移区26中，沟槽栅极40的体区28延伸之间设置的p型体区28 从发射区34朝向漂移区26，以及由绝缘材料在接触与沟槽栅极40的至少漂移区26日60个内突出的突出部的一部分的表面上的凸部60

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