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1. 发明申请

US20100080050A1 MAGNETORESISTIVE EFFECT DEVICE AND MAGNETIC MEMORY 有权
标题翻译：磁感应效应器和磁记忆
公开(公告)号：US20100080050A1
公开(公告)日：2010-04-01
申请号：US12556883
申请日：2009-09-10
申请人： Jyunichi OZEKI , Naoharu SHIMOMURA , Sumio IKEGAWA , Tadashi KAI , Masahiko NAKAYAMA , Hisanori AIKAWA , Tatsuya KISHI , Hiroaki YODA , Eiji KITAGAWA , Masatoshi YOSHIKAWA
发明人： Jyunichi OZEKI , Naoharu SHIMOMURA , Sumio IKEGAWA , Tadashi KAI , Masahiko NAKAYAMA , Hisanori AIKAWA , Tatsuya KISHI , Hiroaki YODA , Eiji KITAGAWA , Masatoshi YOSHIKAWA
IPC分类号： G11C11/00 , H01L29/82 , G11C11/14
CPC分类号： H01L27/228 , B82Y25/00 , G11C11/161 , G11C11/5607 , H01F10/123 , H01F10/3254 , H01F10/3277 , H01F10/3286 , H01F10/329 , H01L43/08
摘要： A magnetic memory includes a magnetoresistive effect device comprising: a first ferromagnetic layer that has magnetic anisotropy in a direction perpendicular to a film plane thereof; a first nonmagnetic layer that is provided on the first ferromagnetic layer; a first reference layer that is provided on the first nonmagnetic layer, has magnetic anisotropy in a direction perpendicular to a film plane thereof, has magnetization antiparallel to a magnetization direction of the first ferromagnetic layer, and has a film thickness that is 1/5.2 to 1/1.5 times as large as a film thickness of the first ferromagnetic layer in the direction perpendicular to the film plane; a second nonmagnetic layer that is provided on the first reference layer; and a storage layer that is provided on the second nonmagnetic layer, has magnetic anisotropy in a direction perpendicular to a film plane thereof, and has a magnetization direction varied by spin-polarized electrons caused by flowing the current to the magnetoresistive effect device.
摘要翻译：磁存储器包括磁阻效应器件，包括：在垂直于其膜平面的方向上具有磁各向异性的第一铁磁层; 设置在第一铁磁层上的第一非磁性层; 设置在第一非磁性层上的第一参考层在垂直于其膜平面的方向上具有磁各向异性，具有与第一铁磁层的磁化方向反平行的磁化，并且具有1 / 5.2〜在第一铁磁层的垂直于膜平面的方向上的膜厚度的1/15倍; 设置在第一参考层上的第二非磁性层; 并且设置在第二非磁性层上的存储层在垂直于其膜平面的方向上具有磁各向异性，并且由于使电流流向磁阻效应器而引起的由自旋极化电子变化的磁化方向。

2. 发明申请

US20120099369A1 MAGNETORESISTIVE ELEMENT AND MAGNETIC MEMORY 有权
标题翻译：磁性元件和磁记忆
公开(公告)号：US20120099369A1
公开(公告)日：2012-04-26
申请号：US13342324
申请日：2012-01-03
申请人： Tadashi KAI , Katsuya Nishiyama , Toshihiko Nagase , Masatoshi Yoshikawa , Eiji Kitagawa , Tadaomi Daibou , Makoto Nagamine , Masahiko Nakayama , Naoharu Shimomura , Hiroaki Yoda , Kei Yakushiji , Shinji Yuasa , Hitoshi Kubota , Taro Nagahama , Akio Fukushima , Koji Ando
发明人： Tadashi KAI , Katsuya Nishiyama , Toshihiko Nagase , Masatoshi Yoshikawa , Eiji Kitagawa , Tadaomi Daibou , Makoto Nagamine , Masahiko Nakayama , Naoharu Shimomura , Hiroaki Yoda , Kei Yakushiji , Shinji Yuasa , Hitoshi Kubota , Taro Nagahama , Akio Fukushima , Koji Ando
IPC分类号： G11C11/02 , H01L29/82
CPC分类号： H01L43/10 , G11C11/161 , G11C11/1659 , G11C11/1675 , H01L27/228 , Y10S977/935
摘要： According to one embodiment, a magnetoresistive element includes a first magnetic layer with a variable magnetization and an easy-axis in a perpendicular direction to a film surface, a second magnetic layer with an invariable magnetization and an easy-axis in the perpendicular direction, and a first nonmagnetic layer between the first and second magnetic layers. The first magnetic layer comprises a ferromagnetic material including an alloy in which Co and Pd, or Co and Pt are alternately laminated on an atomically close-packed plane thereof. The first magnetic layer has C-axis directing the perpendicular direction. And a magnetization direction of the first magnetic layer is changed by a current flowing through the first magnetic layer, the first nonmagnetic layer and the second magnetic layer.
摘要翻译：根据一个实施例，磁阻元件包括具有可变磁化的第一磁性层和在垂直于膜表面的垂直方向上的易轴，具有不变磁化的第二磁性层和垂直方向上的易轴，以及在第一和第二磁性层之间的第一非磁性层。第一磁性层包括铁磁材料，其包括Co和Pd或Co和Pt交替层压在原子紧密堆积的平面上的合金。第一磁性层具有指向垂直方向的C轴。并且通过流过第一磁性层，第一非磁性层和第二磁性层的电流改变第一磁性层的磁化方向。

3. 发明申请

US20090244792A1 MAGNETORESISTANCE EFFECT ELEMENT AND MAGNETIC RANDOM ACCESS MEMORY 有权
标题翻译：磁阻效应元件和磁性随机存取存储器
公开(公告)号：US20090244792A1
公开(公告)日：2009-10-01
申请号：US12396778
申请日：2009-03-03
申请人： Masahiko NAKAYAMA , Tadashi KAI , Sumio IKEGAWA , Hiroaki YODA , Tatsuya KISHI
发明人： Masahiko NAKAYAMA , Tadashi KAI , Sumio IKEGAWA , Hiroaki YODA , Tatsuya KISHI
IPC分类号： G11B5/33
CPC分类号： H01L43/08 , G11C11/161 , G11C11/1675 , H01L27/226
摘要： A magnetoresistance effect element includes: a first ferromagnetic layer having invariable magnetization perpendicular to a film plane; a second ferromagnetic layer having variable magnetization perpendicular to the film plane; a first nonmagnetic layer interposed between the first ferromagnetic layer and the second ferromagnetic layer; a third ferromagnetic layer provided on an opposite side of the second ferromagnetic layer from the first nonmagnetic layer, and having variable magnetization parallel to the film plane; and a second nonmagnetic layer interposed between the second and third ferromagnetic layers. Spin-polarized electrons are injected into the second ferromagnetic layer by flowing a current in the direction perpendicular to the film planes between the first and third ferromagnetic layers, precession movement is induced in the magnetization of the third ferromagnetic layer by injecting the spin-polarized electrons, and a microwave magnetic field of a frequency corresponding to the precession movement is applied to the second ferromagnetic layer.
摘要翻译：磁阻效应元件包括：具有垂直于膜平面的不变磁化的第一铁磁层; 具有垂直于膜平面的可变磁化的第二铁磁层; 介于所述第一铁磁层和所述第二铁磁层之间的第一非磁性层; 第三铁磁层，其设置在所述第二铁磁层的与所述第一非磁性层相反的一侧上，并且具有与所述膜平面平行的可变磁化强度; 以及插入在第二和第三铁磁层之间的第二非磁性层。通过在垂直于第一和第三铁磁层之间的膜平面的方向上流动电流，将旋转极化电子注入到第二铁磁层中，通过注入自旋极化电子在第三铁磁层的磁化中引起进动运动并且将对应于进动运动的频率的微波磁场施加到第二铁磁层。

4. 发明申请

US20150069552A1 MAGNETIC MEMORY DEVICE AND METHOD OF MANUFACTURING THE MAGNETIC MEMORY DEVICE 有权
标题翻译：磁记忆体装置及其制造方法
公开(公告)号：US20150069552A1
公开(公告)日：2015-03-12
申请号：US14200894
申请日：2014-03-07
申请人： Yutaka HASHIMOTO , Tadashi KAI , Masahiko NAKAYAMA , Hiroaki YODA , Toshihiko NAGASE , Masatoshi YOSHIKAWA , Yasuyuki SONODA
发明人： Yutaka HASHIMOTO , Tadashi KAI , Masahiko NAKAYAMA , Hiroaki YODA , Toshihiko NAGASE , Masatoshi YOSHIKAWA , Yasuyuki SONODA
IPC分类号： H01L43/02 , H01L43/12
CPC分类号： H01L43/12 , G11C11/161 , H01L43/08
摘要： According to one embodiment, a magnetic memory device includes a magnetoresistance effect element having a structure in which a first magnetic layer, a nonmagnetic layer, a second magnetic layer, and a third magnetic layer are stacked, wherein the third magnetic layer comprises a first region and a plurality of second regions, and each of the second regions is surrounded by the first region, has conductivity, and has a greater magnetic property than the first region.
摘要翻译：根据一个实施例，磁存储器件包括具有其中堆叠第一磁性层，非磁性层，第二磁性层和第三磁性层的结构的磁阻效应元件，其中第三磁性层包括第一区域和多个第二区域，并且每个第二区域被第一区域包围，具有导电性，并且具有比第一区域更大的磁特性。

5. 发明申请

US20150325785A1 MAGNETORESISTIVE ELEMENT AND METHOD OF MANUFACTURING THE SAME 有权
公开(公告)号：US20150325785A1
公开(公告)日：2015-11-12
申请号：US14807267
申请日：2015-07-23
申请人： Masahiko NAKAYAMA , Masatoshi YOSHIKAWA , Tadashi KAI , Yutaka HASHIMOTO , Masaru TOKO , Hiroaki YODA , Jae Geun OH , Keum Bum LEE , Choon Kun RYU , Hyung Suk LEE , Sook Joo KIM
发明人： Masahiko NAKAYAMA , Masatoshi YOSHIKAWA , Tadashi KAI , Yutaka HASHIMOTO , Masaru TOKO , Hiroaki YODA , Jae Geun OH , Keum Bum LEE , Choon Kun RYU , Hyung Suk LEE , Sook Joo KIM
IPC分类号： H01L43/12 , H01L43/10 , H01L43/02 , H01L43/08
CPC分类号： H01L43/02 , H01L27/222 , H01L27/224 , H01L27/226 , H01L43/08 , H01L43/10 , H01L43/12
摘要： According to one embodiment, a magnetoresistive element is disclosed. The magnetoresistive element includes a reference layer, a tunnel barrier layer, a storage layer. The storage layer includes a first region and a second region provided outside the first region to surround the first region, the second region including element included in the first region and another element being different from the element. The magnetoresistive element further includes a cap layer including a third region and a fourth region provided outside the third region to surround the third region, the fourth region including an element included in the third region and the another element.

6. 发明申请

US20150069557A1 MAGNETORESISTIVE ELEMENT AND METHOD OF MANUFACTURING THE SAME 有权
标题翻译：磁性元件及其制造方法
公开(公告)号：US20150069557A1
公开(公告)日：2015-03-12
申请号：US14202802
申请日：2014-03-10
申请人： Masahiko NAKAYAMA , Masatoshi YOSHIKAWA , Tadashi KAI , Yutaka HASHIMOTO , Masaru TOKO , Hiroaki YODA , Jae Geun OH , Keum Bum LEE , Choon Kun RYU , Hyung Suk LEE , Sook Joo KIM
发明人： Masahiko NAKAYAMA , Masatoshi YOSHIKAWA , Tadashi KAI , Yutaka HASHIMOTO , Masaru TOKO , Hiroaki YODA , Jae Geun OH , Keum Bum LEE , Choon Kun RYU , Hyung Suk LEE , Sook Joo KIM
IPC分类号： H01L43/02 , H01L43/12
CPC分类号： H01L43/02 , H01L27/222 , H01L27/224 , H01L27/226 , H01L43/08 , H01L43/10 , H01L43/12
摘要： According to one embodiment, a magnetoresistive element is disclosed. The magnetoresistive element includes a reference layer, a tunnel barrier layer, a storage layer. The storage layer includes a first region and a second region provided outside the first region to surround the first region, the second region including element included in the first region and another element being different from the element. The magnetoresistive element further includes a cap layer including a third region and a fourth region provided outside the third region to surround the third region, the fourth region including an element included in the third region and the another element.
摘要翻译：根据一个实施例，公开了一种磁阻元件。磁阻元件包括参考层，隧道势垒层，存储层。存储层包括第一区域和设置在第一区域外部以围绕第一区域的第二区域，第二区域包括包含在第一区域中的元素，而另一个元素不同于元件。磁阻元件进一步包括盖层，该盖层包括第三区域和设置在第三区域外部以包围第三区域的第四区域，第四区域包括包括在第三区域中的元件和另一元件。

7. 发明申请

US20150069554A1 MAGNETIC MEMORY AND METHOD OF MANUFACTURING THE SAME 审中-公开
标题翻译：磁记忆及其制造方法
公开(公告)号：US20150069554A1
公开(公告)日：2015-03-12
申请号：US14201263
申请日：2014-03-07
申请人： Masahiko NAKAYAMA , Yasuyuki SONODA , Hiroaki YODA , Makoto NAGAMINE , Masatoshi YOSHIKAWA , Masaru TOKO , Tadashi KAI , Daisuke WATANABE , Youngmin EEH , Koji UEDA , Kazuya SAWADA , Toshihiko NAGASE
发明人： Masahiko NAKAYAMA , Yasuyuki SONODA , Hiroaki YODA , Makoto NAGAMINE , Masatoshi YOSHIKAWA , Masaru TOKO , Tadashi KAI , Daisuke WATANABE , Youngmin EEH , Koji UEDA , Kazuya SAWADA , Toshihiko NAGASE
IPC分类号： H01L43/02 , H01L43/12
CPC分类号： H01L43/08 , H01L27/228 , H01L43/02 , H01L43/12
摘要： According to one embodiment, a magnetic memory is disclosed. The memory includes a conductive layer containing a first metallic material, a stacked body formed above the conductive layer and including a first magnetic layer containing a second metallic material, a second magnetic layer, and a tunnel barrier layer formed between the first magnetic layer and the second magnetic layer, and an insulating layer formed on a side face of the stacked body and containing an oxide of the first metallic material. A standard electrode potential of the first metallic material is lower than the standard electrode potential of the second metallic material.
摘要翻译：根据一个实施例，公开了一种磁存储器。存储器包括含有第一金属材料的导电层，形成在导电层之上的层叠体，并且包括形成在第一磁性层和第二磁性层之间的包含第二金属材料的第一磁性层，第二磁性层和隧道势垒层第二磁性层和形成在层叠体的侧面上并且包含第一金属材料的氧化物的绝缘层。第一金属材料的标准电极电位低于第二金属材料的标准电极电位。

8. 发明申请

US20080130176A1 MAGNETORESISTIVE EFFECT ELEMENT AND MAGNETIC MEMORY 有权
标题翻译：磁电效应元件和磁记忆
公开(公告)号：US20080130176A1
公开(公告)日：2008-06-05
申请号：US12019657
申请日：2008-01-25
申请人： Tadashi KAI , Masahiko Nakayama , Sumio Ikegawa , Yoshiaki Fukuzumi , Yoshihisa Iwata
发明人： Tadashi KAI , Masahiko Nakayama , Sumio Ikegawa , Yoshiaki Fukuzumi , Yoshihisa Iwata
IPC分类号： G11B5/33
CPC分类号： H01L43/08 , G11C11/16 , H01L27/222
摘要： A magnetoresistive effect element includes a nonmagnetic layer having mutually facing first and second surfaces. A reference layer is provided on the first surface and has a fixed magnetization direction. A magnetization variable layer is provided on the second surface, has variable magnetization direction, and has a planer shape including a rectangular part, a first projected part, and a second projected part. The rectangular part has mutually facing first and second longer sides and mutually facing first and second shorter sides. The first projected part projects from the first longer side at a position shifted from the center toward the first shorter side. The second projected part projects from the second longer side at a position shifted from the center toward the second shorter side.
摘要翻译：磁阻效应元件包括具有相互面对的第一和第二表面的非磁性层。参考层设置在第一表面上并具有固定的磁化方向。磁化变化层设置在第二表面上，具有可变的磁化方向，并且具有包括矩形部分，第一突出部分和第二突出部分的平面形状。矩形部分具有相互面对的第一和第二长边以及相互面对的第一和第二短边。第一突出部从第一长边突出的位置从中心向第一短边移动。第二突出部从第二长边突出的位置从中心向第二短边移动。

9. 发明申请

US20130056349A1 SPUTTERING TARGET AND METHOD OF MANUFACTURING MAGNETIC MEMORY USING THE SAME 审中-公开
标题翻译：溅射目标和使用其制造磁记忆的方法
公开(公告)号：US20130056349A1
公开(公告)日：2013-03-07
申请号：US13600812
申请日：2012-08-31
申请人： Eiji KITAGAWA , Tadaomi DAIBOU , Kenji NOMA , Tadashi KAI , Koji YAMAKAWA , Toshihiko NAGASE , Katsuya NISHIYAMA , Koji UEDA , Daisuke WATANABE , Hiroaki YODA , Satoru SANO , Yoshihiro NISHIMURA , Takayuki WATANABE , Yuzo KATO , Akira UEKI
发明人： Eiji KITAGAWA , Tadaomi DAIBOU , Kenji NOMA , Tadashi KAI , Koji YAMAKAWA , Toshihiko NAGASE , Katsuya NISHIYAMA , Koji UEDA , Daisuke WATANABE , Hiroaki YODA , Satoru SANO , Yoshihiro NISHIMURA , Takayuki WATANABE , Yuzo KATO , Akira UEKI
IPC分类号： C23C14/08 , C23C14/35
CPC分类号： C23C14/082 , C23C14/3414 , G11C11/161 , H01L27/228 , H01L43/12
摘要： Provided are a sputtering target including a target main body 10 that has MgO as a main component and a thickness of 3 mm or smaller, and a method of manufacturing a magnetic memory using the sputtering target which improves an MR ratio.
摘要翻译：提供一种溅射靶，其包括具有MgO作为主要成分并且厚度为3mm以下的靶主体10以及使用该溅射靶的磁性存储器的制造方法，其提高MR比。

10. 发明申请

US20110227179A1 MAGNETORESISTIVE ELEMENT, METHOD OF MANUFACTURING THE SAME, AND MAGNETIC MEMORY 有权
标题翻译：磁性元件，制造它们的方法和磁记忆
公开(公告)号：US20110227179A1
公开(公告)日：2011-09-22
申请号：US13050692
申请日：2011-03-17
申请人： Eiji KITAGAWA , Tadashi KAI , Tadaomi DAIBOU , Yutaka HASHIMOTO , Hiroaki YODA
发明人： Eiji KITAGAWA , Tadashi KAI , Tadaomi DAIBOU , Yutaka HASHIMOTO , Hiroaki YODA
IPC分类号： H01L29/82 , H01L21/8246
CPC分类号： H01L43/08 , H01L27/228 , H01L43/12
摘要： A magnetoresistive element according to an embodiment includes: a first magnetic layer; a tunnel barrier layer on the first magnetic layer; a second magnetic layer placed on the tunnel barrier layer and containing CoFe; and a nonmagnetic layer placed on the second magnetic layer, and containing nitrogen and at least one element selected from the group consisting of B, Ta, Zr, Al, and Ce.
摘要翻译：根据实施例的磁阻元件包括：第一磁性层; 在第一磁性层上的隧道阻挡层; 放置在隧道势垒层上并含有CoFe的第二磁性层; 以及放置在第二磁性层上的非磁性层，并含有氮和选自B，Ta，Zr，Al和Ce中的至少一种元素。

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