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1. 发明授权

US08664516B2 Structure and method of solar cell efficiency improvement by strain technology 有权
标题翻译：应变技术提高太阳能电池效率的结构与方法
公开(公告)号：US08664516B2
公开(公告)日：2014-03-04
申请号：US12416369
申请日：2009-04-01
申请人： Jyun-Jhe Tsai , Ying-Jhe Yang , Chee Wee Liu
发明人： Jyun-Jhe Tsai , Ying-Jhe Yang , Chee Wee Liu
IPC分类号： H01L31/0203
CPC分类号： H01L31/04 , H01L31/0248 , H01L31/0264 , Y02E10/50
摘要： A structure and a method of the solar cell efficiency improvement by the strain technology are provided. The solar cell has a first surface and a second surfaces which at least a gasket is disposed thereon for supporting the solar cell and being the axle whiling stressing. The method includes the steps of: (a) applying at least a stress on the first surface; (b) generating a supporting force on the second surface; and (c) generating at least a strain in the solar cell. In addition, the present invention also includes a method involving a step of: (a) applying a mechanical stress to the solar cell; (b) generating a tension in the solar cell by at least two materials having different lattice constants; or (c) generating another tension in the solar cell by a shallow trench isolation filler, a high tensile/compressive stress silicon nitride layer and a combination thereof.
摘要翻译：提供了通过应变技术提高太阳能电池效率的结构和方法。太阳能电池具有第一表面和第二表面，至少垫圈设置在其上用于支撑太阳能电池并且是轴向应力。该方法包括以下步骤：（a）在第一表面上施加至少一个应力; （b）在第二表面上产生支撑力; 和（c）在太阳能电池中产生至少一个应变。另外，本发明还包括以下步骤的方法：（a）向太阳能电池施加机械应力; （b）通过具有不同晶格常数的至少两种材料在太阳能电池中产生张力; 或（c）通过浅沟槽隔离填料，高拉伸/压缩应力氮化硅层及其组合在太阳能电池中产生另一张力。

2. 发明申请

US20100024870A1 Structure And Method Of Solar Cell Efficiency Improvement By Strain Technology 有权
标题翻译：通过应变技术提高太阳能电池效率的结构与方法
公开(公告)号：US20100024870A1
公开(公告)日：2010-02-04
申请号：US12416369
申请日：2009-04-01
申请人： Jyun-Jhe Tsai , Ying-Jhe Yang , Chee Wee Liu
发明人： Jyun-Jhe Tsai , Ying-Jhe Yang , Chee Wee Liu
IPC分类号： H01L31/00 , H01L21/02
CPC分类号： H01L31/04 , H01L31/0248 , H01L31/0264 , Y02E10/50
摘要： A structure and a method of the solar cell efficiency improvement by the strain technology are provided. The solar cell has a first surface and a second surfaces which at least a gasket is disposed thereon for supporting the solar cell and being the axle whiling stressing. The method includes the steps of: (a) applying at least a stress on the first surface; (b) generating a supporting force on the second surface; and (c) generating at least a strain in the solar cell. In addition, the present invention also includes a method involving a step of: (a) applying a mechanical stress to the solar cell; (b) generating a tension in the solar cell by at least two materials having different lattice constants; or (c) generating another tension in the solar cell by a shallow trench isolation filler, a high tensile/compressive stress silicon nitride layer and a combination thereof.
摘要翻译：提供了通过应变技术提高太阳能电池效率的结构和方法。太阳能电池具有第一表面和第二表面，至少垫圈设置在其上用于支撑太阳能电池并且是轴向应力。该方法包括以下步骤：（a）在第一表面上施加至少一个应力; （b）在第二表面上产生支撑力; 和（c）在太阳能电池中产生至少一个应变。另外，本发明还包括以下步骤的方法：（a）向太阳能电池施加机械应力; （b）通过具有不同晶格常数的至少两种材料在太阳能电池中产生张力; 或（c）通过浅沟槽隔离填料，高拉伸/压缩应力氮化硅层及其组合在太阳能电池中产生另一张力。

3. 发明申请

US20130089943A1 METHOD OF MANUFACTURING A SOLAR CELL 审中-公开
标题翻译：制造太阳能电池的方法
公开(公告)号：US20130089943A1
公开(公告)日：2013-04-11
申请号：US13440951
申请日：2012-04-05
申请人： Yen-Yu Chen , Wei-Shuo Ho , Yu-Hung Huang , Y.Y. Chen , Chee Wee Liu
发明人： Yen-Yu Chen , Wei-Shuo Ho , Yu-Hung Huang , Y.Y. Chen , Chee Wee Liu
IPC分类号： H01L31/0232
CPC分类号： H01L31/02167 , H01L31/02168 , H01L31/068 , H01L31/1864 , H01L31/1868 , Y02E10/547 , Y02P70/521
摘要： An embodiment of the present disclosure provides method of manufacturing a solar cell. The method comprises the steps of providing a silicon substrate, forming a P-N junction structure in the silicon substrate, forming an oxide layer for passivating the surface defect of the substrate that has a low reflectivity for AM1.5G solar spectrum, and forming a plurality of metal electrodes on the silicon substrate.
摘要翻译：本公开的实施例提供了制造太阳能电池的方法。该方法包括以下步骤：提供硅衬底，在硅衬底中形成PN结结构，形成用于钝化对AM1.5G太阳光谱具有低反射率的衬底的表面缺陷的氧化物层，以及形成多个硅基板上的金属电极。

4. 发明授权

US08009479B2 Memory formed by using defects 有权
标题翻译：通过使用缺陷形成的记忆
公开(公告)号：US08009479B2
公开(公告)日：2011-08-30
申请号：US12617516
申请日：2009-11-12
申请人： Yen-Ting Chen , Ching-Fang Huang , Hung-Chang Sun , Chee Wee Liu
发明人： Yen-Ting Chen , Ching-Fang Huang , Hung-Chang Sun , Chee Wee Liu
IPC分类号： G11C16/06
CPC分类号： G11C16/0408 , G11C16/02 , G11C2211/4016 , H01L29/66825 , H01L29/685 , H01L29/788
摘要： A non-volatile memory is provided. The non-volatile memory comprises at least a silicon-on-insulator transistor including a substrate; an insulating layer disposed on the substrate; an active region disposed on the insulating layer; and an energy barrier device disposed in the active region and outputting a relatively small current when the non-volatile memory is read.
摘要翻译：提供非易失性存储器。非易失性存储器至少包括一个包括衬底的绝缘体上硅晶体管; 设置在所述基板上的绝缘层; 设置在绝缘层上的有源区; 以及设置在有源区域中并且在读取非易失性存储器时输出相对小的电流的能量屏障装置。

5. 发明申请

US20090302349A1 STRAINED GERMANIUM FIELD EFFECT TRANSISTOR AND METHOD OF FABRICATING THE SAME 审中-公开
标题翻译：应变锗场效应晶体管及其制造方法
公开(公告)号：US20090302349A1
公开(公告)日：2009-12-10
申请号：US12540216
申请日：2009-08-12
申请人： Min Hung Lee , Cheng Yeh Yu , Chee Wee Liu
发明人： Min Hung Lee , Cheng Yeh Yu , Chee Wee Liu
IPC分类号： H01L29/78 , H01L21/20
CPC分类号： H01L29/1054 , H01L21/02381 , H01L21/02532 , H01L21/02664
摘要： A strained germanium field effect transistor (FET) and method of fabricating the same is related to the strained Ge field effect transistor with a thin and pure Ge layer as a carrier channel. The pure Ge layer with the thickness between 1 nm and 10 nm is formed between an unstrained substrate and a gate insulation layer, and directly contacts with the unstrained substrate. The gate is disposed on the gate insulation layer. The germanium layer is used as a carrier transport channel of the strained Ge FET to improve the drive current and the carrier mobility, and to increase the devices performance effectively. Furthermore, a Si protective layer with extremely thin thickness can be deposed between and directly contacts with the gate insulation layer and the pure Ge layer.
摘要翻译：应变锗场效应晶体管（FET）及其制造方法涉及具有薄而纯的Ge层作为载流子通道的应变Ge场效应晶体管。在无应变衬底和栅极绝缘层之间形成厚度在1nm和10nm之间的纯Ge层，并且与无约束衬底直接接触。栅极设置在栅极绝缘层上。锗层用作应变Ge FET的载流子传输通道，以改善驱动电流和载流子迁移率，并有效提高器件性能。此外，具有极薄厚度的Si保护层可以被放置在栅绝缘层和纯Ge层之间并直接接触。

6. 发明申请

US20130221534A1 Through Silicon Via Layout Pattern 有权
标题翻译：通过硅通布局图案
公开(公告)号：US20130221534A1
公开(公告)日：2013-08-29
申请号：US13478815
申请日：2012-05-23
申请人： Sun-Rong Jan , Che-Yu Yeh , Chee Wee Liu , Chien-Hua Huang , Bing J. Sheu
发明人： Sun-Rong Jan , Che-Yu Yeh , Chee Wee Liu , Chien-Hua Huang , Bing J. Sheu
IPC分类号： H01L23/498
CPC分类号： H01L23/481 , H01L2924/0002 , H01L2924/00
摘要： A semiconductor device comprises a substrate with a first side and a second side, wherein a plurality of active circuits are formed adjacent to the first side of the substrate and a plurality of through silicon vias arranged in a polygon shape and extending from the first side of to the second side, wherein the polygon shape has more than six sides, and wherein each through silicon via is placed at a corresponding apex of the polygon shape.
摘要翻译：半导体器件包括具有第一侧和第二侧的衬底，其中在衬底的第一侧附近形成多个有源电路，并且多个通孔布置成多边形并从第一侧延伸的多个通孔硅通孔到所述第二面，其中所述多边形形状具有六个以上的边，并且其中每个通过硅通孔被放置在所述多边形形状的相应顶点处。

7. 发明申请

US20110053351A1 Solar Cell Defect Passivation Method 有权
标题翻译：太阳能电池缺陷钝化法
公开(公告)号：US20110053351A1
公开(公告)日：2011-03-03
申请号：US12853232
申请日：2010-08-09
申请人： Wen-Fa Tsai , Jyong-Fong Liao , Yen-Yu Chen , Chee Wee Liu , Chi-Fong Ai
发明人： Wen-Fa Tsai , Jyong-Fong Liao , Yen-Yu Chen , Chee Wee Liu , Chi-Fong Ai
IPC分类号： H01L21/30
CPC分类号： H01L31/1868 , Y02E10/50 , Y02P70/521
摘要： The present disclosure passivates solar cell defects. Plasma immersion ion implantation (PIII) is used to repair the defects during or after making the solar cell. Hydrogen ion is implanted into absorption layer with different sums of energy to fill gaps of defects or surface recombination centers. Thus, solar cell defects are diminished and carriers are transferred with improved photovoltaic conversion efficiency.
摘要翻译：本公开钝化太阳能电池缺陷。在制造太阳能电池期间或之后，使用等离子体浸没离子注入（PIII）来修复缺陷。将氢离子注入到具有不同的能量之和的吸收层中以填充缺陷或表面复合中心的间隙。因此，太阳能电池缺陷减少，并且载流子随着光伏转换效率的提高而被转移。

8. 发明申请

US20050082567A1 Structure of a relaxed Si/Ge epitaxial layer and fabricating method thereof 审中-公开
标题翻译：弛豫Si / Ge外延层的结构及其制造方法
公开(公告)号：US20050082567A1
公开(公告)日：2005-04-21
申请号：US10847913
申请日：2004-05-19
申请人： Peng Shiu Chen , Yang Tai Tseng , Chee Wee Liu
发明人： Peng Shiu Chen , Yang Tai Tseng , Chee Wee Liu
IPC分类号： H01L21/20 , H01L21/205 , H01L21/302 , H01L31/072
CPC分类号： H01L21/0245 , H01L21/02502 , H01L21/0251 , H01L21/02532
摘要： A structure of the relaxed SiGe epitaxial layer and a fabrication method comprises a Si substrate, a Si interfacial layer positioning on the substrate, a SiGe graded buffer layer positioning on the Si interfacial layer, and a uniform SiGe epitaxy layer positioning on the SiGe graded buffer layer. It uses a mesa structure and obtains a highly relaxed SiGe epitaxial layer with a low defect density of threading dislocations, a smooth surface. A strained Si can be formed on the strained relaxation layer. The strained Si, the strained Ge, the strained Si/Ge can apply to the high-speed planar electronic devices. By using a mesa structure, it can efficiently decrease the required growth time and cost in the conventional relaxed SiGe epitaxy layer.
摘要翻译：松弛SiGe外延层的结构和制造方法包括Si衬底，在衬底上定位的Si界面层，定位在Si界面层上的SiGe分级缓冲层，以及定位在SiGe分级缓冲层上的均匀SiGe外延层层。它采用台面结构，并获得具有低缺陷密度的穿透位错，光滑表面的高度松弛的SiGe外延层。可以在应变弛豫层上形成应变Si。应变Si，应变Ge，应变Si / Ge可应用于高速平面电子器件。通过使用台面结构，可以有效地减少传统的弛豫SiGe外延层所需的生长时间和成本。

9. 发明授权

US10002820B2 Through silicon via layout pattern 有权
公开(公告)号：US10002820B2
公开(公告)日：2018-06-19
申请号：US13478815
申请日：2012-05-23
申请人： Sun-Rong Jan , Che-Yu Yeh , Chee Wee Liu , Chien-Hua Huang , Bing J. Sheu
发明人： Sun-Rong Jan , Che-Yu Yeh , Chee Wee Liu , Chien-Hua Huang , Bing J. Sheu
IPC分类号： H01L23/48 , H01L23/52 , H01L29/40
CPC分类号： H01L23/481 , H01L2924/0002 , H01L2924/00
摘要： A semiconductor device comprises a substrate with a first side and a second side, wherein a plurality of active circuits are formed adjacent to the first side of the substrate and a plurality of through silicon vias arranged in a polygon shape and extending from the first side of to the second side, wherein the polygon shape has more than six sides, and wherein each through silicon via is placed at a corresponding apex of the polygon shape.

10. 发明申请

US20120024366A1 Thin film solar cell structure and fabricating method thereof 审中-公开
标题翻译：薄膜太阳能电池结构及其制造方法
公开(公告)号：US20120024366A1
公开(公告)日：2012-02-02
申请号：US12926089
申请日：2010-10-26
申请人： Chee Wee Liu , Wen Wei Hsu , Tzu Huan Cheng , Wei Shuo Ho
发明人： Chee Wee Liu , Wen Wei Hsu , Tzu Huan Cheng , Wei Shuo Ho
IPC分类号： H01L31/0216 , H01L31/18 , C23C14/35
CPC分类号： H01L31/0392 , H01L31/0322 , H01L31/03925 , H01L31/03928 , H01L31/0749 , H01L31/1868 , Y02E10/541 , Y02P70/521
摘要： A thin film solar cell structure and the fabricating method thereof are disclosed. A passivation layer is embedded into the thin film solar cell structure to be in contact with an absorbing layer. The interface trap density of the absorbing layer is reduced by the surface electric field of the passivation layer. The invention helps improve the power conversion efficiency and protect the absorbing layer.
摘要翻译：公开了一种薄膜太阳能电池结构及其制造方法。钝化层嵌入到薄膜太阳能电池结构中以与吸收层接触。通过钝化层的表面电场减小吸收层的界面陷阱密度。本发明有助于提高功率转换效率并保护吸收层。

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