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1. 发明公开

US20230154824A1 SEMICONDUCTOR DEVICE AND METHOD OF FORMING THE SAME 审中-公开
公开(公告)号：US20230154824A1
公开(公告)日：2023-05-18
申请号：US18155322
申请日：2023-01-17
申请人： Chee-Wee LIU , MEDIATEK INC.
发明人： Ming-Tzong YANG , Hsien-Hsin LIN , Wen-Kai WAN , Chia-Che CHUNG , Chee-Wee LIU
IPC分类号： H01L23/373 , H01L21/768 , H01L29/78 , H01L29/66
CPC分类号： H01L23/373 , H01L21/768 , H01L29/785 , H01L29/66795 , H01L2029/7858
摘要： A semiconductor device and method for forming same. According to an embodiment. The method provides a base substrate, forms a heat dissipation substrate on the base substrate, wherein a thermal conductivity of the heat dissipation substrate is between 200 Wm−1K−1and 1200 Wm−1K−1. This method further forms a device layer on the heat dissipation substrate, wherein the device layer comprises a transistor. The method further removes the base substrate.

2. 发明授权

US08664516B2 Structure and method of solar cell efficiency improvement by strain technology 有权
标题翻译：应变技术提高太阳能电池效率的结构与方法
公开(公告)号：US08664516B2
公开(公告)日：2014-03-04
申请号：US12416369
申请日：2009-04-01
申请人： Jyun-Jhe Tsai , Ying-Jhe Yang , Chee Wee Liu
发明人： Jyun-Jhe Tsai , Ying-Jhe Yang , Chee Wee Liu
IPC分类号： H01L31/0203
CPC分类号： H01L31/04 , H01L31/0248 , H01L31/0264 , Y02E10/50
摘要： A structure and a method of the solar cell efficiency improvement by the strain technology are provided. The solar cell has a first surface and a second surfaces which at least a gasket is disposed thereon for supporting the solar cell and being the axle whiling stressing. The method includes the steps of: (a) applying at least a stress on the first surface; (b) generating a supporting force on the second surface; and (c) generating at least a strain in the solar cell. In addition, the present invention also includes a method involving a step of: (a) applying a mechanical stress to the solar cell; (b) generating a tension in the solar cell by at least two materials having different lattice constants; or (c) generating another tension in the solar cell by a shallow trench isolation filler, a high tensile/compressive stress silicon nitride layer and a combination thereof.
摘要翻译：提供了通过应变技术提高太阳能电池效率的结构和方法。太阳能电池具有第一表面和第二表面，至少垫圈设置在其上用于支撑太阳能电池并且是轴向应力。该方法包括以下步骤：（a）在第一表面上施加至少一个应力; （b）在第二表面上产生支撑力; 和（c）在太阳能电池中产生至少一个应变。另外，本发明还包括以下步骤的方法：（a）向太阳能电池施加机械应力; （b）通过具有不同晶格常数的至少两种材料在太阳能电池中产生张力; 或（c）通过浅沟槽隔离填料，高拉伸/压缩应力氮化硅层及其组合在太阳能电池中产生另一张力。

3. 发明申请

US20130087191A1 POINT-CONTACT SOLAR CELL STRUCTURE 审中-公开
标题翻译：点接触太阳能电池结构
公开(公告)号：US20130087191A1
公开(公告)日：2013-04-11
申请号：US13341526
申请日：2011-12-30
申请人： Seow-Wei TAN , Yen-Yu Chen , Wei-Shuo Ho , Yu-Hung Huang , Chee-Wee Liu
发明人： Seow-Wei TAN , Yen-Yu Chen , Wei-Shuo Ho , Yu-Hung Huang , Chee-Wee Liu
IPC分类号： H01L31/0224 , H01L31/0216
CPC分类号： H01L31/022425 , H01L31/1804 , Y02E10/547 , Y02P70/521
摘要： A point-contact solar cell structure includes a semiconductor substrate, a front electrode, a first passivation layer, a second passivation layer, and a rear electrode. The semiconductor substrate includes an upper surface, a lower surface, and an emitter layer, a base layer, and a plurality of locally doped regions located between the upper surface and the lower surface. The plurality of locally doped regions is located on the lower surface at intervals. The second passivation layer is located on the lower surface, and has a plurality of openings disposed respectively corresponding to the locally doped regions. The rear electrode is located on one side of the second passivation layer opposite to the semiconductor substrate, and passes through the second passivation layer via the openings to contact the locally doped regions. The width of at least one opening corresponding to the front electrode is greater than that of the remaining openings.
摘要翻译：点接触太阳能电池结构包括半导体衬底，前电极，第一钝化层，第二钝化层和后电极。半导体衬底包括位于上表面和下表面之间的上表面，下表面和发射极层，基底层和多个局部掺杂区域。多个局部掺杂区域间隔地位于下表面上。第二钝化层位于下表面，并且具有分别对应于局部掺杂区域设置的多个开口。后电极位于与半导体衬底相对的第二钝化层的一侧上，并且经由开口穿过第二钝化层以接触局部掺杂区域。对应于前电极的至少一个开口的宽度大于其余开口的宽度。

4. 发明申请

US20070045610A1 Transistor device with strained germanium (Ge) layer by selectively growth and fabricating method thereof 审中-公开
标题翻译：具有应变锗（Ge）层的晶体管器件通过选择性生长及其制造方法
公开(公告)号：US20070045610A1
公开(公告)日：2007-03-01
申请号：US11293275
申请日：2005-12-05
申请人： Min-Hung Lee , Cheng-Yeh Yu , Chee-Wee Liu
发明人： Min-Hung Lee , Cheng-Yeh Yu , Chee-Wee Liu
IPC分类号： H01L31/109
CPC分类号： H01L29/1054 , H01L21/02381 , H01L21/0245 , H01L21/02532 , H01L21/0262 , H01L21/02636 , H01L29/66583 , H01L29/78
摘要： A transistor device with strained Ge layer by selectively growth and a fabricating method thereof are provided. A strained Ge layer is selectively grown on a substrate, so that the material of source/drain region is still the same as that of the substrate, and the strained Ge layer serves as a carry transport channel. Therefore, the performance of the device characteristics can be improved and the leakage current of the transistor may be approximately commensurate with that of a Si substrate field effect transistor (FET).
摘要翻译：提供了通过选择性生长具有应变Ge层的晶体管器件及其制造方法。应变Ge层选择性地生长在衬底上，使得源极/漏极区的材料与衬底的材料仍然相同，并且应变Ge层用作携带传输沟道。因此，可以提高器件特性的性能，并且晶体管的漏电流可以与Si衬底场效应晶体管（FET）的漏电流近似相当。

5. 发明申请

US20140008726A1 SEMICONDUCTOR STRUCTURE AND METHOD OF FABRICATING THE SAME 审中-公开
标题翻译：半导体结构及其制造方法
公开(公告)号：US20140008726A1
公开(公告)日：2014-01-09
申请号：US13541751
申请日：2012-07-04
申请人： Yu-Jen HSIAO , Ting-Jen HSUEH , Jia-Min SHIEH , Yu-Ming YEH , Chee-Wee LIU , Bau-Tong DAI , Fu-Liang YANG
发明人： Yu-Jen HSIAO , Ting-Jen HSUEH , Jia-Min SHIEH , Yu-Ming YEH , Chee-Wee LIU , Bau-Tong DAI , Fu-Liang YANG
IPC分类号： H01L29/772 , H01L21/336
CPC分类号： H01L29/34 , H01L27/142 , H01L29/045 , H01L31/0322 , H01L31/078 , H01L31/1804 , Y02E10/541 , Y02E10/547 , Y02P70/521
摘要： A semiconductor structure fabricating method includes the following steps. Firstly, a silicon substrate is provided. The silicon substrate has a first surface and a second surface. In addition, a first semiconductor structure is formed on the first surface of the silicon substrate. Then, the second surface of the silicon substrate is textured as a rough surface. Then, a first electrode layer is formed on the rough surface.
摘要翻译：半导体结构制造方法包括以下步骤。首先，提供硅基板。硅衬底具有第一表面和第二表面。此外，在硅衬底的第一表面上形成第一半导体结构。然后，硅衬底的第二表面作为粗糙表面被纹理化。然后，在粗糙表面上形成第一电极层。

6. 发明申请

US20130168696A1 Silicon Carbide Schottky Diode Device with Mesa Termination and Manufacturing Method Thereof 审中-公开
标题翻译：具有Mesa终止的碳化硅肖特基二极管器件及其制造方法
公开(公告)号：US20130168696A1
公开(公告)日：2013-07-04
申请号：US13458926
申请日：2012-04-27
申请人： Hui-Hsuan WANG , Hao-Chen HUANG , Chee-Wee LIU
发明人： Hui-Hsuan WANG , Hao-Chen HUANG , Chee-Wee LIU
IPC分类号： H01L29/161 , H01L21/329
CPC分类号： H01L29/66143 , H01L29/2003 , H01L29/861 , H01L29/872
摘要： A silicon carbide Schottky diode device with mesa terminations and the manufacturing method thereof are provided. The silicon carbide Schottky diode device includes an n-type epitaxial silicon carbide layer with mesa terminations on an n-type silicon carbide substrate, two p-type regions in the n-type epitaxial silicon carbide layer and a Schottky metal contact on the n-type epitaxial silicon carbide layer and the p-type regions, a dielectric layer on sidewalls and planes of the mesa terminations.
摘要翻译：提供具有台面端接的碳化硅肖特基二极管器件及其制造方法。碳化硅肖特基二极管器件包括在n型碳化硅衬底上具有台面端接的n型外延碳化硅层，n型外延碳化硅层中的两个p型区域和n型外延碳化硅层上的肖特基金属接触，型外延碳化硅层和p型区域，在台面的侧壁和平面上的介电层。

7. 发明申请

US20130089943A1 METHOD OF MANUFACTURING A SOLAR CELL 审中-公开
标题翻译：制造太阳能电池的方法
公开(公告)号：US20130089943A1
公开(公告)日：2013-04-11
申请号：US13440951
申请日：2012-04-05
申请人： Yen-Yu Chen , Wei-Shuo Ho , Yu-Hung Huang , Y.Y. Chen , Chee Wee Liu
发明人： Yen-Yu Chen , Wei-Shuo Ho , Yu-Hung Huang , Y.Y. Chen , Chee Wee Liu
IPC分类号： H01L31/0232
CPC分类号： H01L31/02167 , H01L31/02168 , H01L31/068 , H01L31/1864 , H01L31/1868 , Y02E10/547 , Y02P70/521
摘要： An embodiment of the present disclosure provides method of manufacturing a solar cell. The method comprises the steps of providing a silicon substrate, forming a P-N junction structure in the silicon substrate, forming an oxide layer for passivating the surface defect of the substrate that has a low reflectivity for AM1.5G solar spectrum, and forming a plurality of metal electrodes on the silicon substrate.
摘要翻译：本公开的实施例提供了制造太阳能电池的方法。该方法包括以下步骤：提供硅衬底，在硅衬底中形成PN结结构，形成用于钝化对AM1.5G太阳光谱具有低反射率的衬底的表面缺陷的氧化物层，以及形成多个硅基板上的金属电极。

8. 发明授权

US07579668B2 Method for photo-detecting and apparatus for the same 有权
标题翻译：光电检测方法及其设备
公开(公告)号：US07579668B2
公开(公告)日：2009-08-25
申请号：US11875287
申请日：2007-10-19
申请人： Chee-Wee Liu , Chun-Hung Lai , Meng-kun Chen , Wei-Shuo Ho
发明人： Chee-Wee Liu , Chun-Hung Lai , Meng-kun Chen , Wei-Shuo Ho
IPC分类号： H01L31/06 , H01L27/148 , H01L29/768 , H01L31/062 , H01L31/113
CPC分类号： H01L31/103 , H01L27/1446
摘要： A method for photo-detecting and an apparatus for the same are provided. The apparatus for photo-detecting includes a first P-N diode and a second P-N diode. The first P-N diode, has a first P-N junction which has a first thickness, by which a first electrical signal is generated when irradiated by light, and the second P-N diode has a second P-N junction which has a second thickness, by which a second electrical signal is generated when irradiated by light. The second thickness is larger than the first thickness and an operation of the first electrical signal and the second electrical signal is proceeded for obtaining a third electrical signal.
摘要翻译：提供了一种用于光电检测的方法及其装置。用于光检测的装置包括第一P-N二极管和第二P-N二极管。第一PN二极管具有第一PN结，其具有第一厚度，当被光照射时，第一PN信号产生第一电信号，并且第二PN二极管具有第二PN结，第二PN结具有第二厚度，第二PN 当光照射时产生信号。第二厚度大于第一厚度，并且进行第一电信号和第二电信号的操作以获得第三电信号。

9. 发明申请

US20080217651A1 Photodetector 审中-公开
标题翻译：光电检测器
公开(公告)号：US20080217651A1
公开(公告)日：2008-09-11
申请号：US11829257
申请日：2007-07-27
申请人： Chee-Wee Liu , Chu-Hsuan Lin , Cheng-The Yu
发明人： Chee-Wee Liu , Chu-Hsuan Lin , Cheng-The Yu
IPC分类号： H01L31/028 , H01L31/0224
CPC分类号： H01L31/113 , H01L31/1804 , Y02E10/547 , Y02P70/521
摘要： A photodetector is provided. The photodetector includes a base piece; a germanium layer mounted on the base piece and including a first area and a second area; a first metal electrode mounted on the first area; an insulation layer mounted on the second area; and a second metal electrode mounted on the insulation layer.
摘要翻译：提供光电检测器。光检测器包括基片; 安装在所述基片上并包括第一区域和第二区域的锗层; 安装在第一区域上的第一金属电极; 安装在所述第二区域上的绝缘层; 以及安装在所述绝缘层上的第二金属电极。

10. 发明申请

US20080142908A1 METHOD OF USING III-V SEMICONDUCTOR MATERIAL AS GATE ELECTRODE 审中-公开
标题翻译：使用III-V族半导体材料作为门电极的方法
公开(公告)号：US20080142908A1
公开(公告)日：2008-06-19
申请号：US11877812
申请日：2007-10-24
申请人： Chih-Hung Tseng , Hsien-Ta Wu , Cheng-Yi Peng , Chee-Wee Liu
发明人： Chih-Hung Tseng , Hsien-Ta Wu , Cheng-Yi Peng , Chee-Wee Liu
IPC分类号： H01L29/78 , H01L21/3205
CPC分类号： H01L21/28088 , H01L29/4966
摘要： A method of using an III-V semiconductor material as a gate electrode is provided. The method includes steps of providing a substrate; forming a gate dielectric layer on the substrate; and forming the III-V semiconductor material on the gate dielectric layer.
摘要翻译：提供了使用III-V族半导体材料作为栅电极的方法。该方法包括提供衬底的步骤; 在所述基板上形成栅介电层; 以及在栅介质层上形成III-V族半导体材料。

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