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1. 发明申请

US20090128962A1 READ-HEAD, MAGNETIC HEAD AND MAGNETIC STORAGE APPARATUS 审中-公开
标题翻译：读头，磁头和磁储存装置
公开(公告)号：US20090128962A1
公开(公告)日：2009-05-21
申请号：US12271473
申请日：2008-11-14
申请人： Junichirou Murai , Masanori Akie , Hitoshi Kanai , Kazuo Kobayashi , Yuji Uehara , Xiaoxi Liu , Akimitsu Morisako
发明人： Junichirou Murai , Masanori Akie , Hitoshi Kanai , Kazuo Kobayashi , Yuji Uehara , Xiaoxi Liu , Akimitsu Morisako
IPC分类号： G11B5/33
CPC分类号： G11B5/3909 , B82Y10/00 , B82Y25/00 , G01R33/093 , G01R33/098 , G11B5/3912 , G11B5/3932 , G11B2005/3996
摘要： The read-head is capable of corresponding to high recording density without deteriorating characteristics even if a small size read-element is used. The read-head of the present invention comprises: a read-element including a free layer; and a magnetic domain control layer for domain-controlling the free layer. The magnetic domain control layer is composed of a soft magnetic material including at least one substance selected from the group consisting of Fe, Co and Ni. A ratio (a/b) of a length (a) of the magnetic domain control layer in the core width direction to a length (b) thereof in the height direction is 5 or more, and the length (b) is 100 nm or less.
摘要翻译：即使使用小尺寸的读取元件，读取头能够对应于高记录密度而不劣化特性。本发明的读取头包括：包含自由层的读取元件; 以及用于域控制自由层的磁畴控制层。磁畴控制层由包含选自Fe，Co和Ni中的至少一种物质的软磁性材料构成。磁畴控制层的芯宽方向的长度（a）与高度方向的长度（b）的比（a / b）为5以上，长度（b）为100nm，减。

2. 发明授权

US5792546A Magneto-resistive head and method of producing the same 失效
标题翻译：磁阻头及其制造方法
公开(公告)号：US5792546A
公开(公告)日：1998-08-11
申请号：US289204
申请日：1994-08-12
申请人： Michiaki Kanamine , Hitoshi Kanai , Junichi Kane , Junzo Toda , Yuji Uehara
发明人： Michiaki Kanamine , Hitoshi Kanai , Junichi Kane , Junzo Toda , Yuji Uehara
IPC分类号： G11B5/31 , G11B5/39 , G11B5/66
CPC分类号： G11B5/3932 , G11B5/3903 , G11B5/3912 , G11B5/3967 , G11B5/3163 , Y10S428/90 , Y10T428/1171 , Y10T428/24942 , Y10T428/2495
摘要： A magneto-resistive head is provided with a substrate, a lower shield layer made of a Fe-system magnetic material and provided above the substrate, and a non-magnetic insulator layer provided above the lower shield layer. The non-magnetic insulator layer has a function of suppressing deterioration of surface roughness of the lower shield layer when subjected to an annealing process under a magnetic field in order to improve magnetic characteristics of the lower shield layer to desired magnetic characteristics.
摘要翻译：磁阻头设置有基板，由Fe系磁性材料制成并设置在基板上方的下屏蔽层，以及设置在下屏蔽层上方的非磁性绝缘体层。非磁性绝缘体层具有在磁场下进行退火处理时抑制下屏蔽层的表面粗糙度劣化的功能，以便将下屏蔽层的磁特性改善为期望的磁特性。

3. 发明授权

US5771141A Magnetoresistive head and magnetic recording/reproducing apparatus 失效
标题翻译：磁阻磁头和磁记录/重放装置
公开(公告)号：US5771141A
公开(公告)日：1998-06-23
申请号：US766511
申请日：1996-12-13
申请人： Yoshinori Ohtsuka , Takao Koshikawa , Yoshifumi Mizoshita , Yuji Uehara , Eiichi Kanda , Ken-ichi Aoshima , Hitoshi Kanai , Junichi Kane
发明人： Yoshinori Ohtsuka , Takao Koshikawa , Yoshifumi Mizoshita , Yuji Uehara , Eiichi Kanda , Ken-ichi Aoshima , Hitoshi Kanai , Junichi Kane
IPC分类号： G11B5/39
CPC分类号： G11B5/39
摘要： A magnetoresistive head comprises a magnetoresistive layer having an axis of easy magnetization in the direction parallel to an air bearing surface, a first electrode formed on the magnetoresistive layer on the air bearing surface side and an oblique side portion with respect to the air bearing surface, and a second electrode formed to be separated at a distance from the first electrode and having a side portion substantially parallel to the oblique side portion of the first electrode on the magnetoresistive layer.
摘要翻译：磁阻头包括在平行于空气轴承表面的方向上具有容易磁化的轴的磁阻层，形成在空气轴承表面侧的磁阻层上的第一电极和相对于空气轴承表面的倾斜侧部，以及第二电极，其形成为与所述第一电极隔开一定距离，并且具有与所述磁阻层上的所述第一电极的所述倾斜侧部大致平行的侧部。

4. 发明授权

US5092680A Device for measuring temperature of object in vacuum environment 失效
标题翻译：真空环境下物体温度测量装置
公开(公告)号：US5092680A
公开(公告)日：1992-03-03
申请号：US527307
申请日：1990-05-23
申请人： Kazuo Kobayashi , Ayahiko Sato , Yuji Uehara , Shigetomo Sawada
发明人： Kazuo Kobayashi , Ayahiko Sato , Yuji Uehara , Shigetomo Sawada
IPC分类号： G01J5/04 , G01J5/08
CPC分类号： G01J5/0003 , G01J5/041 , G01J5/061 , G01J5/08 , G01J5/0806 , G01J5/0809 , G01J5/0821 , G01J5/084 , G01J5/0868 , G01J5/0875 , G01J5/046
摘要： A device for the measurement of a temperature in a relatively low range having the lower limit of below 100.degree. C. is proposed. The device is suitably used for measuring a temperature of a substrate 4 during a sputtering treatment in a vacuum environment. Infrared rays radiated from the substrate 4 in a vacuum chamber 1 are collected by an optical lens 13 mounted in a freely movable probe 10 via a mirror (15) provided in a hood 14 attached to a front end of the probe (10) for deflecting the incident rays to the lens 13. The collected rays are led outside the chamber 1 to a sensor through a fluoride fiber 8 optically connected to the lens 13. The fiber 8 is enveloped in an air-tight manner within a metal bellows 9. A pipe 20, 24 for feeding a coolant extends in a circulating manner through the interior of the bellows 9 between a coolant source 30 and the probe 10, to suppress the radiation of infrared rays from the probe 10, hood 14 and mirror 15, and to reduce disturbance to the detected substrate temperature value. A combination of an MCT sensor composed of Hg, Cd and Te and a chalcogen fiber composed of Ge, As, Se and Te is also proposed for the measurement of relatively low temperature ranges. A system for controlling a substrate temperature during the sputtering process while using the above device is also proposed.
摘要翻译：提出了用于测量具有低于100℃的下限的较低范围内的温度的装置。该装置适用于在真空环境中的溅射处理期间测量基板4的温度。在真空室1中从基板4辐射的红外线通过安装在可自由移动的探针10中的光学透镜13收集，所述光学透镜13经由设置在附接到探针（10）的前端的罩14中的反射镜（15）入射到透镜13的光线。收集的光线通过光学连接到透镜13的氟化纤维8被引导到室1外面到传感器。光纤8以气密的方式包围在金属波纹管9内。用于供给冷却剂的管20,24以循环的方式延伸穿过冷却剂源30和探针10之间的波纹管9的内部，以抑制来自探针10，罩14和反射镜15的红外线的辐射，并且减少对检测到的基板温度值的干扰。还提出了由Hg，Cd和Te组成的MCT传感器和由Ge，As，Se和Te组成的硫族元素纤维的组合，用于测量相对较低的温度范围。还提出了一种用于在使用上述装置的溅射过程中控制衬底温度的系统。

5. 发明申请

US20090207532A1 MAGNETO RESISTANCE EFFECT DEVICE, HEAD SLIDER, MAGNETIC INFORMATION STORAGE APPARATUS, AND MAGNETO RESISTANCE EFFECT MEMORY 审中-公开
标题翻译：磁阻电阻装置，头滑块，磁信息存储装置和磁阻电阻效应存储器
公开(公告)号：US20090207532A1
公开(公告)日：2009-08-20
申请号：US12371011
申请日：2009-02-13
申请人： Atsushi Furuya , Yuji Uehara , Kenji Noma
发明人： Atsushi Furuya , Yuji Uehara , Kenji Noma
IPC分类号： G11B5/33
CPC分类号： G11B5/3909 , B82Y10/00 , B82Y25/00 , G01R33/093 , G11B5/3906 , G11B2005/3996 , G11C11/161 , G11C11/1673 , H01F10/3254 , H01F10/3268 , H01F41/307
摘要： A magneto resistance effect device includes a fixed magnetization portion including a ferromagnetic material, in which the magnetization direction can be fixed, and a tunnel barrier layer including high band gap metal oxide and low band gap metal oxide, and arranged on the fixed magnetization portion. The device includes a free magnetization portion including a ferromagnetic material, arranged on the tunnel barrier layer, in which the magnetization can be changed.
摘要翻译：磁阻效应器件包括固定磁化部分，该固定磁化部分包括其中可固定磁化方向的铁磁材料和包括高带隙金属氧化物和低带隙金属氧化物的隧道势垒层，并且布置在固定磁化部分上。该装置包括布置在隧道势垒层上的铁磁材料的自由磁化部分，其中磁化可以改变。

6. 发明申请

US20090169915A1 METHOD OF PRODUCING MAGNETORESISTANCE EFFECT ELEMENT AND MAGNETORESISTANCE EFFECT ELEMENT 失效
标题翻译：生产磁阻效应元件和磁阻效应元件的方法
公开(公告)号：US20090169915A1
公开(公告)日：2009-07-02
申请号：US12340236
申请日：2008-12-19
申请人： Migaku Takahashi , Masakiyo Tsunoda , Koujiro Komagaki , Yuji Uehara , Kazuyuki Sunaga
发明人： Migaku Takahashi , Masakiyo Tsunoda , Koujiro Komagaki , Yuji Uehara , Kazuyuki Sunaga
IPC分类号： B32B37/14 , B32B15/00
CPC分类号： B32B37/06 , B32B2307/208 , B32B2309/02 , B32B2309/105 , B32B2309/68 , B32B2311/00 , B32B2457/00 , H01L43/08 , H01L43/12 , Y10T29/49041 , Y10T29/49043 , Y10T29/49044 , Y10T29/49046 , Y10T156/10 , Y10T428/12465
摘要： The method of the present invention provides a magnetoresistance effect element, which is capable of having a high MR ratio, corresponding to high density recording and being suitably applied to a magnetoresistance device even though a barrier layer is thinned to reduce resistance of the magnetoresistance effect element. The method of producing the magnetoresistance effect element, which includes the barrier layer composed of an oxidized metal, a first magnetic layer contacting one of surfaces of the barrier layer and a second magnetic layer contacting the other surface thereof, comprises the steps of: laminating the barrier layer on the first magnetic layer with using a target composed of the oxidized metal; and laminating the second magnetic layer on the barrier layer. The barrier layer is annealed before laminating the second magnetic layer thereon.
摘要翻译：本发明的方法提供了一种磁阻效应元件，其能够具有对应于高密度记录的高MR比，并且适当地应用于磁阻器件，即使势垒层变薄以降低磁阻效应元件的电阻。制造磁阻效应元件的方法，其包括由氧化金属构成的阻挡层，与阻挡层的一个表面接触的第一磁性层和与其另一个表面接触的第二磁性层，包括以下步骤：使用由氧化金属构成的靶，在第一磁性层上形成阻挡层; 并将第二磁性层层叠在阻挡层上。在层叠第二磁性层之前对阻挡层进行退火。

7. 发明申请

US20090168270A1 EXCHANGE-COUPLED ELEMENT AND MAGNETORESISTANCE EFFECT ELEMENT 审中-公开
标题翻译：交换耦合元件和磁阻效应元件
公开(公告)号：US20090168270A1
公开(公告)日：2009-07-02
申请号：US12342419
申请日：2008-12-23
申请人： Migaku Takahashi , Masakiyo Tsunoda , Koujiro Komagaki , Yuji Uehara
发明人： Migaku Takahashi , Masakiyo Tsunoda , Koujiro Komagaki , Yuji Uehara
IPC分类号： G11B5/33
CPC分类号： H01L43/08 , B82Y25/00 , G01R33/093 , G11B5/3906 , H01F10/3254 , H01F10/3272 , H01F10/3295
摘要： In comparison with conventional exchange-coupled elements, the exchange-coupled element of the present invention has greater unidirectional magnetization anisotropy. The exchange-coupled element comprises: an ordered antiferromagnetic layer; and a pinned magnetic layer being exchange-coupled with the ordered antiferromagnetic layer, the pinned magnetic layer having unidirectional magnetization anisotropy. The pinned magnetic layer is constituted by a first pinned magnetic layer having a composition, which can have a face-centered cubic lattice structure, and a second pinned magnetic layer having a composition, which can have a body-centered cubic lattice structure.
摘要翻译：与传统的交换耦合元件相比，本发明的交换耦合元件具有更大的单向磁化各向异性。交换耦合元件包括：有序反铁磁层; 并且被钉扎的磁性层与有序的反铁磁层交换耦合，钉扎的磁性层具有单向磁化各向异性。钉扎磁性层由具有面心立方晶格结构的组成的第一固定磁性层和具有体心立方晶格结构的具有组成的第二固定磁性层构成。

8. 发明申请

US20060209458A1 Soft magnetic film and thin film magnetic head 审中-公开
标题翻译：软磁膜和薄膜磁头
公开(公告)号：US20060209458A1
公开(公告)日：2006-09-21
申请号：US11158257
申请日：2005-06-21
申请人： Junichi Kane , Yuji Uehara , Kenji Noma , Akifumi Chikazawa
发明人： Junichi Kane , Yuji Uehara , Kenji Noma , Akifumi Chikazawa
IPC分类号： G11B5/147
CPC分类号： G11B5/3116 , B82Y10/00 , B82Y25/00 , G11B5/3146 , H01F10/14 , H01F10/16 , H01F10/265
摘要： The soft magnetic film has superior soft magnetic characteristics and is suitable for a thin film magnetic head. The soft magnetic film of the present invention comprises: a magnetic base layer including a ferromagnetic element; and a ferromagnetic layer being piled on the magnetic base layer. The soft magnetic film has uniaxial magnetic anisotropy. The magnetic base layer includes at least one element selected from Fe, Ni and Co as the ferromagnetic element.
摘要翻译：软磁膜具有优良的软磁特性，适用于薄膜磁头。本发明的软磁性膜包括：包含铁磁性元件的磁性基层; 并且铁磁层堆叠在磁性基底层上。软磁膜具有单轴磁各向异性。磁性基层包括选自Fe，Ni和Co中的至少一种元素作为铁磁性元素。

9. 发明授权

US06970324B2 Thin film head with nickel-iron alloy non-magnetic substratum between non-magnetic gap layer and upper magnetic pole layer 失效
标题翻译：薄膜头与镍 - 铁合金非磁性基底之间的非磁隙层和上磁极层之间
公开(公告)号：US06970324B2
公开(公告)日：2005-11-29
申请号：US10299177
申请日：2002-11-19
申请人： Shoji Ikeda , Takayuki Kubomiya , Ikuya Tagawa , Yuji Uehara
发明人： Shoji Ikeda , Takayuki Kubomiya , Ikuya Tagawa , Yuji Uehara
IPC分类号： G11B5/31 , G11B5/39 , H01F10/16 , H01F10/26
CPC分类号： H01F10/26 , G11B5/3109 , G11B5/313 , G11B5/3967 , H01F10/16
摘要： A soft magnetic film includes a ferromagnetic layer. The ferromagnetic layer is laid over a non-magnetic substructure including ferromagnetic atoms. The uniaxial magnetic anisotropy may be established in the ferromagnetic layer. Since a magnetic property is not required in the substructure under the ferromagnetic layer, the soft magnetic film of this type may be utilized for purposes of wider variations.
摘要翻译：软磁性膜包括铁磁层。铁磁层铺设在包括铁磁原子的非磁性子结构之上。可以在铁磁层中建立单轴磁各向异性。由于在铁磁层下的亚结构中不需要磁性，所以这种类型的软磁膜可以用于较宽的变化。

10. 发明授权

US06605414B2 Method for manufacturing magnetoresistance head 失效
标题翻译：磁阻头制造方法
公开(公告)号：US06605414B2
公开(公告)日：2003-08-12
申请号：US09439724
申请日：1999-11-12
申请人： Keiji Watanabe , Koji Nozaki , Miwa Igarashi , Yoko Kuramitsu , Ei Yano , Takahisa Namiki , Hiroshi Shirataki , Keita Ohtsuka , Michiaki Kanamine , Yuji Uehara
发明人： Keiji Watanabe , Koji Nozaki , Miwa Igarashi , Yoko Kuramitsu , Ei Yano , Takahisa Namiki , Hiroshi Shirataki , Keita Ohtsuka , Michiaki Kanamine , Yuji Uehara
IPC分类号： G03F730
CPC分类号： G11B5/3903 , G11B5/3116 , G11B5/3163 , G11B5/3906 , G11B5/398 , Y10S438/911
摘要： A method for manufacturing a magnetoresistance head of the present invention comprises the steps of forming an organic film on a multilayered film constituting a magnetoresistance device, forming an upper film formed of resist or inorganic film on the organic film, patterning the organic film and the upper film, cutting into edges of the organic film patterns from edges of the upper film patterns inwardly to such an extent that particles of the thin film being formed on the upper film and the multilayered film do not contact to side portions of the organic film patterns.
摘要翻译：本发明的磁电阻头的制造方法包括以下步骤：在构成磁阻器件的多层膜上形成有机膜，在有机膜上形成由抗蚀剂或无机膜形成的上层膜，使有机膜和上层薄膜，从上部膜图案的边缘向内切割成有机膜图案的边缘，使得形成在上部膜和多层膜上的薄膜的颗粒不与有机膜图案的侧部接触。

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