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1. 发明授权

US6154349A Magnetoresistive transducer including CoFeZ soft magnetic layer 失效
标题翻译：磁阻换能器包括CoFeZ软磁层
公开(公告)号：US6154349A
公开(公告)日：2000-11-28
申请号：US783464
申请日：1997-01-16
申请人： Hitoshi Kanai , Junichi Kane , Ken'ichiro Yamada
发明人： Hitoshi Kanai , Junichi Kane , Ken'ichiro Yamada
IPC分类号： G01R33/09 , G11B5/39 , H01F10/08 , H01F10/32 , H01L43/08
CPC分类号： B82Y25/00 , B82Y10/00 , G01R33/093 , G11B5/3903 , G11B5/3967 , H01F10/3268 , G11B2005/3996
摘要： A magnetoresistive transducer includes a multilayer provided with a first soft magnetic layer, a conductive nonmagnetic layer, a second soft magnetic layer, and a biasing magnetic layer giving a magnetization of a predetermined direction to the second soft magnetic layer, in that order of superposition. The first soft magnetic layer is a multilayer superposed structure including a (Co.sub.y Fe.sub.100-y).sub.100-x Z.sub.x alloy layer where Z represents boron and x and y represent atomic fractions (at %), and an alloy layer containing at least Ni and Fe. The (Co.sub.y Fe.sub.100-y).sub.100-x Z.sub.x alloy layer ofthe first soft magnetic layer borders on the nonmagnetic layer and has a face-centered cubic lattice structure with a d spacing smaller than a d spacing of a Co.sub.y Fe.sub.100-y alloy. A pair of electrodes are formed on the multilayer for allowing a sense current to pass through the multilayer.
摘要翻译：磁阻换能器包括按照叠加次序设置有第一软磁层，导电非磁性层，第二软磁层和给予第二软磁层预定方向的磁化的偏置磁性层的多层。第一软磁层是包括（CoyFe100-y）100-xZx合金层，其中Z表示硼，x和y表示原子级分（at％））的多层重叠结构，以及至少含有Ni和Fe的合金层。第一软磁层的（CoyFe100-y）100-xZx合金层与非磁性层相邻，并且具有d间距小于CoyFe100-y合金的d间距的面心立方晶格结构。在多层上形成一对电极，以使感测电流通过多层。

2. 发明授权

US07116533B2 Magnetoresistive sensor 失效
标题翻译：磁阻传感器
公开(公告)号：US07116533B2
公开(公告)日：2006-10-03
申请号：US11327676
申请日：2006-01-06
申请人： Yoshihiko Seyama , Atsushi Tanaka , Keiichi Nagasaka , Yutaka Shimizu , Shin Eguchi , Hitoshi Kanai , Reiko Kondo , Hitoshi Kishi , Junya Ikeda
发明人： Yoshihiko Seyama , Atsushi Tanaka , Keiichi Nagasaka , Yutaka Shimizu , Shin Eguchi , Hitoshi Kanai , Reiko Kondo , Hitoshi Kishi , Junya Ikeda
IPC分类号： G11B5/127
CPC分类号： B82Y25/00 , B82Y10/00 , G01R33/093 , G11B5/3903 , G11B2005/3996 , H01F10/3259 , H01F10/3268 , H01F10/3295
摘要： A magnetoresistive sensor including the following layers, in order: a first conductor layer; a first antiferromagnetic layer; a first pinned ferromagnetic layer; a first nonmagnetic intermediate layer; a free ferromagnetic layer; a second nonmagnetic intermediate layer; a second pinned ferromagnetic layer; a second antiferromagnetic layer; and a second conductor layer. Alternatively, the magnetoresistive sensor may include the following layers, in order: a first conductor layer; a first free ferromagnetic layer; a first nonmagnetic intermediate layer; a first pinned ferromagnetic layer; an antiferromagnetic layer; a second pinned ferromagnetic layer; a second nonmagnetic intermediate layer; a second free ferromagnetic layer; and a second conductor layer.
摘要翻译：一种磁阻传感器，包括以下层：第一导体层; 第一反铁磁层; 第一固定铁磁层; 第一非磁性中间层; 自由铁磁层; 第二非磁性中间层; 第二钉扎铁磁层; 第二反铁磁层; 和第二导体层。或者，磁阻传感器可以依次包括以下层：第一导体层; 第一自由铁磁层; 第一非磁性中间层; 第一固定铁磁层; 反铁磁层; 第二钉扎铁磁层; 第二非磁性中间层; 第二自由铁磁层; 和第二导体层。

3. 发明申请

US20060078762A1 Magnetic film for a magnetic device, magnetic head for a hard disk drive, and solid-state device 审中-公开
标题翻译：用于磁性装置的磁性膜，用于硬盘驱动器的磁头和固态装置
公开(公告)号：US20060078762A1
公开(公告)日：2006-04-13
申请号：US11290747
申请日：2005-11-30
申请人： Kenji Noma , Masaaki Matsuoka , Hitoshi Kanai
发明人： Kenji Noma , Masaaki Matsuoka , Hitoshi Kanai
IPC分类号： G11B5/33
CPC分类号： H01F10/16 , G11B5/187 , G11B5/3113 , G11C11/16 , H01F10/30 , H01F41/18 , H01F41/20 , H01F41/22 , Y10T428/115 , Y10T428/32
摘要： There is provided a magnetic material with a high saturation magnetization of 2.46 teslas or above. By using this magnetic material in a recording head, it is possible to record information with a higher density on a recording medium. The magnetic material can also be applied to various kinds of solid-state devices. The magnetic material is composed of an alloy film made of iron, cobalt, and palladium, wherein a mole percentage content of palladium is set equal to 0.7% or greater but less than 1.0%, and the magnetic material is formed by dry processing.
摘要翻译：提供了具有2.46特斯拉或以上的高饱和磁化强度的磁性材料。通过在记录头中使用该磁性材料，可以在记录介质上记录更高密度的信息。磁性材料也可以应用于各种固态器件。磁性材料由铁，钴和钯制成的合金膜构成，其中钯的摩尔百分含量设定为0.7％以上且小于1.0％，磁性材料通过干式加工形成。

4. 发明授权

US06829122B2 Magnetic head of a magnetoresistance type having an underlying layer having a laminated structure of a tungsten-group metal layer formed on a tantalum-group metal layer 失效
标题翻译：磁阻型磁头，其具有在钽基金属层上形成的钨族金属层的层叠结构的下层
公开(公告)号：US06829122B2
公开(公告)日：2004-12-07
申请号：US09961594
申请日：2001-09-24
申请人： Kenichiro Yamada , Naoki Mukoyama , Hidehiko Suzuki , Hitoshi Kanai
发明人： Kenichiro Yamada , Naoki Mukoyama , Hidehiko Suzuki , Hitoshi Kanai
IPC分类号： G11B539
CPC分类号： B82Y10/00 , G11B5/3113 , G11B5/3903 , G11B5/3929 , G11B5/3932
摘要： A magnetic head of a magnetoresistance type is provided. The magnetic head comprises a magnetoresistance film, an underlying layer formed on each of both sides of the magnetoresistance film, and a magnetic-domain regulating film formed on the underlying layer so as to regulate a magnetic domain of a free magnetic layer in the magnetoresistance film. The underlying layer has a laminated structure of a tungsten-(W)-group metal layer formed on a tantalum-(Ta)-group metal layer. The underlying layer is formed so thick as to arrange the magnetic-domain regulating film at a position corresponding to the free magnetic layer.
摘要翻译：提供磁阻型磁头。磁头包括磁阻膜，形成在磁阻膜的两侧的每一侧上的下层，以及形成在下层上的磁畴调节膜，以调节磁阻膜中的自由磁性层的磁畴。下层具有在钽 - （Ta） - 金属层上形成的钨 - （W） - 金属层的叠层结构。底层形成得如此厚以便将磁畴调节膜布置在与自由磁性层相对应的位置。

5. 发明授权

US06690552B2 Magnetoresistive film, head, and information regeneration apparatus having improved current flow characteristics 失效
标题翻译：具有改善的电流流动特性的磁阻膜，头和信息再生装置
公开(公告)号：US06690552B2
公开(公告)日：2004-02-10
申请号：US09729392
申请日：2000-12-04
申请人： Kenji Noma , Hitoshi Kanai
发明人： Kenji Noma , Hitoshi Kanai
IPC分类号： G11B539
CPC分类号： B82Y25/00 , B82Y10/00 , G11B5/3903 , G11B2005/3996 , H01F10/3268
摘要： There is provided a magnetoresistive film high in resistance to destruction. The magnetoresistive film is a multilayered film including: an antiferromagnetic layer 2 for generating a bias magnetic field; a pinned magnetic layer 3 having magnetization whose direction is fixed by the bias magnetic field; a free magnetic layer 5 having magnetization whose direction changes in accordance with an external magnetic field; and a nonmagnetic middle layer 4 held between the pinned magnetic layer and the free magnetic layer, and is held by a pair of insulation layers (not shown). When a current is passed parallel to the magnetoresistive film, a current center as a position of the thickness direction for dividing the current into two so as to obtain respective equal current amounts is positioned on a side including the pinned magnetic layer during dividing of the magnetoresistive film into two in a center position of a layer thickness of the nonmagnetic middle layer in the thickness direction.
摘要翻译：提供了耐破坏性高的磁阻膜。磁阻膜是一种多层膜，包括：用于产生偏磁场的反铁磁层2; 具有通过偏置磁场固定其方向的磁化的钉扎磁性层3; 具有根据外部磁场的方向变化的磁化的自由磁性层5; 以及保持在钉扎磁性层和自由磁性层之间的非磁性中间层4，并且被一对绝缘层（未示出）保持。当电流平行于磁阻膜通过时，作为用于将电流分成二个以获得相应电流量的电流的厚度方向的位置的电流中心位于包含磁化层的磁性层的一侧在厚度方向上将非磁性中间层的层厚度的中心位置分成两层。

6. 发明授权

US06671138B2 Multi-layer magnetoresistive head and information-reproducing system 失效
标题翻译：具有不同材料反平行耦合自由层的旋转阀
公开(公告)号：US06671138B2
公开(公告)日：2003-12-30
申请号：US10033602
申请日：2001-12-27
申请人： Kenji Noma , Hitoshi Kanai , Kenichi Aoshima
发明人： Kenji Noma , Hitoshi Kanai , Kenichi Aoshima
IPC分类号： G11B539
CPC分类号： B82Y25/00 , B82Y10/00 , G11B5/3903 , G11B2005/3996
摘要： An object of the present invention is to provide a magnetoresistive effect type of head that is high in the magnetoresistive rate while including the laminated ferrimagnetic film. The fixed magnetic layer of the magnetoresistive effect type of head has a first fixed magnetic layer, a second fixed magnetic layer laminated at a position farther from the free magnetic layer as compared with the first fixed magnetic layer, and an opposite-parallel-coupling intermediate layer interposed between the first fixed magnetic layer and the second fixed magnetic layer, in which magnetizations of the first and second fixed magnetic layers are coupled with one another in such a manner that the magnetizations are pointed in directions which are substantially parallel and mutually opposite. The second fixed magnetic layer is formed with a material that is different from a material of said first fixed magnetic layer, and has a resistivity higher than that of said first fixed magnetic layer.
摘要翻译：本发明的目的是提供一种磁阻效应型磁头，其磁阻率高，同时包含叠层铁氧体膜。磁阻效应型磁头的固定磁性层具有与第一固定磁性层相比层压在离自由磁性层更远的位置的第一固定磁性层，第二固定磁性层和相对平行耦合中间体介于第一固定磁性层和第二固定磁性层之间的层，其中第一和第二固定磁性层的磁化彼此耦合，使得磁化指向基本平行且相互相反的方向。第二固定磁性层由不同于所述第一固定磁性层的材料的材料形成，并且具有高于所述第一固定磁性层的电阻率的电阻率。

7. 发明授权

US06501627B2 Spin-valve magnetoresistive head, and composite-type magnetic head and magnetic recording medium drive using the same 失效
公开(公告)号：US06501627B2
公开(公告)日：2002-12-31
申请号：US09994262
申请日：2001-11-26
申请人： Kenji Noma , Hitoshi Kanai , Junichi Kane , Kenichi Aoshima
发明人： Kenji Noma , Hitoshi Kanai , Junichi Kane , Kenichi Aoshima
IPC分类号： G11B539
CPC分类号： B82Y25/00 , B82Y10/00 , G11B5/3903 , G11B5/3967 , G11B2005/3996
摘要： A spin-valve magnetoresistive head having end parts of a free magnetic layer insensitive to an external magnetic field so as to improve sensitivity is provided. The spin-valve magnetoresistive head includes, at least on the terminal part sides, a lamination formed of a first antiferromagnetic layer, a soft magnetic layer, an antiparallel coupling intermediate layer, and a first free magnetic layer.

8. 发明授权

US06493197B2 Magneto-resistance effect type head and information reproducing apparatus 失效
标题翻译：垂直偏置底层和磁阻效应型头
公开(公告)号：US06493197B2
公开(公告)日：2002-12-10
申请号：US09955358
申请日：2001-09-18
申请人： Junichi Ito , Michiaki Kanamine , Hitoshi Kanai
发明人： Junichi Ito , Michiaki Kanamine , Hitoshi Kanai
IPC分类号： G11B539
CPC分类号： B82Y25/00 , B82Y10/00 , G11B5/00 , G11B5/3113 , G11B5/3903 , G11B5/3932 , G11B2005/3996
摘要： The present invention provides a magneto-resistance effect type head for reproducing, with a high sensitivity, information recorded at a high recording density on a recording medium while inhibiting occurrence of the Barkhausen noise, including a magneto-resistance effect element comprised of a multi-layer film containing a free magnetic layer having its magnetization direction changing in correspondence with an external magnetic field, an insulating film, a non-magnetic underlying layer formed on the insulating film, and one pair of magnetic domain-wall control layers formed on the underlying layer in its in-face direction with a predetermined spacing therebetween, for inhibiting movement of magnetic domain wall of the free magnetic layer, in such a configuration that the free magnetic layer has its both ends directly stacked on the pair of the magnetic domain-wall control layers and also has its middle part directly stacked on the underlying layer.
摘要翻译：本发明提供了一种用于以高灵敏度将以高记录密度记录在信息记录介质上的信息同时抑制巴克豪森噪声的发生的磁阻效应型磁头，包括由多声道组成的磁阻效应元件，其包含其磁化方向与外部磁场相对应地变化的自由磁性层，绝缘膜，形成在绝缘膜上的非磁性下层，以及形成在底层上的一对磁畴壁控制层层之间以预定的间隔在其面内方向上，用于抑制自由磁性层的磁畴壁的移动，使得自由磁性层的两端直接堆叠在一对磁畴壁上控制层并且其中间部分直接堆叠在下层上。

9. 发明授权

US06483674B1 Spin valve head, production process thereof and magnetic disk device 失效
标题翻译：旋转阀头，其生产工艺和磁盘装置
公开(公告)号：US06483674B1
公开(公告)日：2002-11-19
申请号：US09707179
申请日：2000-11-06
申请人： Hitoshi Kanai , Junichi Ito
发明人： Hitoshi Kanai , Junichi Ito
IPC分类号： G11B5127
CPC分类号： B82Y25/00 , B82Y10/00 , G11B5/3163 , G11B5/3903 , G11B5/3932 , G11B5/3967 , H01F10/3268
摘要： A spin valve head comprises a spin valve film comprising a regular antiferromagnetic layer, a pinned magnetic layer, an intermediate layer and a free magnetic layer; a pair of electrodes arranged at both ends of the spin valve film; and a pair of exchange bias magnetic field impressing layers arranged at both ends of the free magnetic layer of the spin valve film, wherein the exchange bias magnetic field impressing layers are made of antiferromagnetic material, and the spin valve film extends over the exchange bias magnetic field impressing layers. The spin valve head is characterized in that the abutted junction region is extended so that the occurrence of Barkhausen noise can be more effectively suppressed; and the abutted junction region is stably formed without being affected by the film formation process.
摘要翻译：自旋阀头包括自旋阀膜，其包括规则反铁磁层，钉扎磁性层，中间层和自由磁性层; 布置在自旋阀膜两端的一对电极; 以及布置在自旋阀膜的自由磁性层的两端的一对交换偏置磁场施加层，其中交换偏置磁场施加层由反铁磁材料制成，并且自旋阀膜延伸超过交换偏压磁现场打印层。自旋阀头的特征在于，邻接接合区域延伸，从而可以更有效地抑制巴克豪森噪声的发生; 并且在不受膜形成过程的影响的情况下稳定地形成邻接接合区域。

10. 发明授权

US06295175B1 Apparatus for recognizing spin valve head failure due to pin layer magnetic field offset 失效
标题翻译：用于识别由于针层磁场偏移引起的自旋阀头故障的装置
公开(公告)号：US06295175B1
公开(公告)日：2001-09-25
申请号：US09218494
申请日：1998-12-22
申请人： Isamu Tomita , Takao Koshikawa , Toshinori Hoshino , Tadashi Nakamura , Hitoshi Kanai , Hiroaki Ueno
发明人： Isamu Tomita , Takao Koshikawa , Toshinori Hoshino , Tadashi Nakamura , Hitoshi Kanai , Hiroaki Ueno
IPC分类号： G11B2736
CPC分类号： B82Y25/00 , B82Y10/00 , G11B5/00 , G11B5/012 , G11B5/3903 , G11B5/3967 , G11B5/40 , G11B5/455 , G11B5/465 , G11B5/54 , G11B33/14 , G11B2005/0008 , G11B2005/0018 , G11B2005/3996
摘要： When a pin layer magnetic field offset judgment unit judges that a magnetic field in a pin layer of a spin valve head through which a sense current flows in the interference direction has been deviated from a normal direction, a recovery processing unit allows a recovery from the abnormality arising from the magnetic field offset. For example, the direction of the sense current is switched from the interference direction to the assist direction, and the sense current larger than that upon the ordinary reading action is allowed to flow so that the temperature of an antiferromagnetic layer exceeds the blocking temperature, whereby the direction of the magnetic field in the pin layer is modified to the normal direction by the action of a magnetic field generated from the sense current. After the modification, the sense current is returned to have its ordinary value in the interference direction.
摘要翻译：当针层磁场偏移判断单元判断出感测电流沿着干涉方向流动的自旋阀头的针层中的磁场已经从正常方向偏离时，恢复处理单元允许从由磁场偏移引起的异常。例如，感测电流的方向从干涉方向切换到辅助方向，并且允许大于普通读取动作的感测电流流动，使得反铁磁层的温度超过阻塞温度，由此通过由感应电流产生的磁场的作用，将销层中的磁场的方向修正为法线方向。修改后，检测电流返回到干涉方向上的普通值。

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