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1. 发明授权

US06605414B2 Method for manufacturing magnetoresistance head 失效
标题翻译：磁阻头制造方法
公开(公告)号：US06605414B2
公开(公告)日：2003-08-12
申请号：US09439724
申请日：1999-11-12
申请人： Keiji Watanabe , Koji Nozaki , Miwa Igarashi , Yoko Kuramitsu , Ei Yano , Takahisa Namiki , Hiroshi Shirataki , Keita Ohtsuka , Michiaki Kanamine , Yuji Uehara
发明人： Keiji Watanabe , Koji Nozaki , Miwa Igarashi , Yoko Kuramitsu , Ei Yano , Takahisa Namiki , Hiroshi Shirataki , Keita Ohtsuka , Michiaki Kanamine , Yuji Uehara
IPC分类号： G03F730
CPC分类号： G11B5/3903 , G11B5/3116 , G11B5/3163 , G11B5/3906 , G11B5/398 , Y10S438/911
摘要： A method for manufacturing a magnetoresistance head of the present invention comprises the steps of forming an organic film on a multilayered film constituting a magnetoresistance device, forming an upper film formed of resist or inorganic film on the organic film, patterning the organic film and the upper film, cutting into edges of the organic film patterns from edges of the upper film patterns inwardly to such an extent that particles of the thin film being formed on the upper film and the multilayered film do not contact to side portions of the organic film patterns.
摘要翻译：本发明的磁电阻头的制造方法包括以下步骤：在构成磁阻器件的多层膜上形成有机膜，在有机膜上形成由抗蚀剂或无机膜形成的上层膜，使有机膜和上层薄膜，从上部膜图案的边缘向内切割成有机膜图案的边缘，使得形成在上部膜和多层膜上的薄膜的颗粒不与有机膜图案的侧部接触。

2. 发明授权

US6052261A Method for manufacturing magnetoresistance head 失效
公开(公告)号：US6052261A
公开(公告)日：2000-04-18
申请号：US669610
申请日：1996-06-24
申请人： Keiji Watanabe , Koji Nozaki , Miwa Igarashi , Yoko Kuramitsu , Ei Yano , Takahisa Namiki , Hiroshi Shirataki , Keita Ohtsuka , Michiaki Kanamine , Yuji Uehara
发明人： Keiji Watanabe , Koji Nozaki , Miwa Igarashi , Yoko Kuramitsu , Ei Yano , Takahisa Namiki , Hiroshi Shirataki , Keita Ohtsuka , Michiaki Kanamine , Yuji Uehara
IPC分类号： G11B5/31 , G11B5/39 , G11B5/127
CPC分类号： G11B5/3903 , G11B5/3906 , G11B5/3116 , G11B5/3163 , G11B5/398 , Y10S438/911
摘要： A method for manufacturing a magnetoresistance head of the present invention comprises the steps of forming an organic film on a multilayered film constituting a magnetoresistance device, forming an upper film formed of resist or inorganic film on the organic film, patterning the organic film and the upper film, cutting into edges of the organic film patterns from edges of the upper film patterns inwardly to such an extent that particles of the thin film being formed on the upper film and the multilayered film do not contact to side portions of the organic film patterns.

3. 发明授权

US5968713A Chemically amplified resist compositions and process for the formation of resist patterns 失效
公开(公告)号：US5968713A
公开(公告)日：1999-10-19
申请号：US896833
申请日：1997-07-18
申请人： Koji Nozaki , Ei Yano , Keiji Watanabe , Takahisa Namiki , Miwa Igarashi , Yoko Kuramitsu , Satoshi Takechi , Akiko Kotachi , Makoto Takahashi
发明人： Koji Nozaki , Ei Yano , Keiji Watanabe , Takahisa Namiki , Miwa Igarashi , Yoko Kuramitsu , Satoshi Takechi , Akiko Kotachi , Makoto Takahashi
IPC分类号： G03F7/004 , G03F7/039 , G03F7/30 , G03F7/32 , G03F7/38 , G03F7/40
CPC分类号： G03F7/039 , G03F7/0045
摘要： Alkali-developable, chemically amplified resist composition which comprises an alkali-insoluble, film-forming compound having a structural unit containing a protected alkali-soluble group in which unit a protective moiety of said protected alkali-soluble group is cleaved upon action of an acid generated from a photoacid generator used in combination with said compound, thereby releasing a protective moiety from the alkali-soluble group and converting said compound to an alkali-soluble one, and a photoacid generator capable of being decomposed upon exposure to a patterning radiation to thereby produce an acid capable of causing cleavage of said protective moiety. The resist composition is particularly suitable for excimer laser lithography using an alkaline developer, and the formed resist patterns can exhibit a high sensitivity and excellent dry etch resistance without swelling.

4. 发明授权

US06582878B2 Chemical amplification resist compositions and process for the formation of resist patterns 失效
标题翻译：化学放大抗蚀剂组合物和形成抗蚀剂图案的方法
公开(公告)号：US06582878B2
公开(公告)日：2003-06-24
申请号：US09757476
申请日：2001-01-11
申请人： Takahisa Namiki , Ei Yano , Keiji Watanabe , Koji Nozaki , Miwa Igarashi , Yoko Kuramitsu
发明人： Takahisa Namiki , Ei Yano , Keiji Watanabe , Koji Nozaki , Miwa Igarashi , Yoko Kuramitsu
IPC分类号： G03F7004
CPC分类号： G03F7/0045 , G03F7/039
摘要： A novel chemical amplification resist composition which comprises an alkali-soluble base resin, a photoacid generator and a dissolution inhibitor and in which a cyclic or acyclic structure constituting a matrix portion of the molecule of said dissolution inhibitor contains at least one lone pair-containing portion which can provide a hydrogen bond sufficient to shift and gather an alkali-soluble moiety of said base resin to and on a side of said molecule of the dissolution inhibitor compound. The resist composition can exhibit both excellent sensitivity and resolution and accordingly can be utilized in the formation of very fine resist patterns in a lithographic process. A method for forming such resist patterns is also disclosed.
摘要翻译：一种新颖的化学增幅抗蚀剂组合物，其包含碱溶性基础树脂，光致酸产生剂和溶解抑制剂，其中构成所述溶解抑制剂分子的基质部分的环状或非环状结构含有至少一个含有孤对的部分其可以提供足以将所述基础树脂的碱溶性部分移动并收集在所述溶解抑制剂化合物的所述分子的一侧上和在所述分子的一侧上的氢键。抗蚀剂组合物可以表现出优异的灵敏度和分辨率，因此可以用于在光刻工艺中形成非常精细的抗蚀剂图案。还公开了形成这种抗蚀剂图案的方法。

5. 发明授权

US06200724B1 Chemical amplification resist compositions and process for the formation of resist patterns 失效
标题翻译：化学放大抗蚀剂组合物和形成抗蚀剂图案的方法
公开(公告)号：US06200724B1
公开(公告)日：2001-03-13
申请号：US08715880
申请日：1996-09-19
申请人： Takahisa Namiki , Ei Yano , Keiji Watanabe , Koji Nozaki , Miwa Igarashi , Yoko Kuramitsu
发明人： Takahisa Namiki , Ei Yano , Keiji Watanabe , Koji Nozaki , Miwa Igarashi , Yoko Kuramitsu
IPC分类号： G03C173
CPC分类号： G03F7/0045 , G03F7/039
摘要： A novel chemical amplification resist composition which comprises an alkali-soluble base resin, a photoacid generator and a dissolution inhibitor and in which a cyclic or acyclic structure constituting a matrix portion of the molecule of said dissolution inhibitor contains at least one lone pair-containing portion which can provide a hydrogen bond sufficient to shift and gather an alkali-soluble moiety of said base resin to and on a side of said molecule of the dissolution inhibitor compound. The resist composition can exhibit both excellent sensitivity and resolution and accordingly can be utilized in the formation of very fine resist patterns in a lithographic process. A method for forming such resist patterns is also disclosed.
摘要翻译：一种新颖的化学增幅抗蚀剂组合物，其包含碱溶性基础树脂，光致酸产生剂和溶解抑制剂，其中构成所述溶解抑制剂分子的基质部分的环状或非环状结构含有至少一个含有孤对的部分其可以提供足以将所述基础树脂的碱溶性部分移动并收集在所述溶解抑制剂化合物的所述分子的一侧上和在所述分子的一侧上的氢键。抗蚀剂组合物可以表现出优异的灵敏度和分辨率，因此可用于在光刻工艺中形成非常精细的抗蚀剂图案。还公开了形成这种抗蚀剂图案的方法。

6. 发明授权

US5962191A Resist compositions for forming resist patterns 失效
标题翻译：用于形成抗蚀剂图案的抗蚀剂组合物
公开(公告)号：US5962191A
公开(公告)日：1999-10-05
申请号：US132891
申请日：1998-08-12
申请人： Koji Nozaki , Ei Yano , Keiji Watanabe , Takahisa Namiki , Miwa Igarashi , Yoko Kuramitsu
发明人： Koji Nozaki , Ei Yano , Keiji Watanabe , Takahisa Namiki , Miwa Igarashi , Yoko Kuramitsu
IPC分类号： G03F7/027 , C08F20/52 , C08F220/04 , C08F220/06 , C08F220/10 , C08F220/18 , C08F220/56 , C08K5/00 , C08L33/02 , C08L33/04 , C08L33/10 , C08L33/24 , C08L33/26 , G03F7/012 , G03F7/038 , H01L21/027 , H01L21/312 , G03C1/725
CPC分类号： G03F7/0125 , Y10S430/111 , Y10S430/128
摘要： The negative-working resist composition which comprises a (meth)acrylate copolymer comprising (a) a vinyl monomer unit which contains in a side chain thereof at least one carbon--carbon double bond which does not concern itself with any polymerization reaction, but is able to be crosslinked with a crosslinking agent, (b) an acrylamide or methacrylamide monomer unit, (c) an acrylic acid or methacrylic acid monomer unit and (d) an acrylic acid or methacrylic acid adamantyl monomer unit as well as a crosslinking agent capable of being decomposed upon exposure to a patterning radiation and then causing crosslinking of said copolymer upon heating. The resist composition is particularly suitable for excimer laser lithography using an aqueous basic solution as a developer, and the formed resist patterns can exhibit a high sensitivity and excellent dry etch resistance without swelling.
摘要翻译：负极抗蚀剂组合物，其包含（甲基）丙烯酸酯共聚物，其包含（a）乙烯基单体单元，其侧链含有至少一个不涉及任何聚合反应的碳 - 碳双键，但是能够与交联剂交联，（b）丙烯酰胺或甲基丙烯酰胺单体单元，（c）丙烯酸或甲基丙烯酸单体单元和（d）丙烯酸或甲基丙烯酸金刚烷基单体单元以及能够在暴露于图案化辐射下分解，然后在加热时引起所述共聚物的交联。抗蚀剂组合物特别适合于使用碱性水溶液作为显影剂的准分子激光光刻，并且所形成的抗蚀剂图案可以表现出高灵敏度和优异的耐干蚀刻性而不溶胀。

7. 发明授权

US5824452A Resist compositions and process for the formation of resist patterns 失效
标题翻译：抗蚀剂图案形成的抗蚀剂组合物和方法
公开(公告)号：US5824452A
公开(公告)日：1998-10-20
申请号：US610345
申请日：1996-03-04
申请人： Koji Nozaki , Ei Yano , Keiji Watanabe , Takahisa Namiki , Miwa Igarashi , Yoko Kuramitsu
发明人： Koji Nozaki , Ei Yano , Keiji Watanabe , Takahisa Namiki , Miwa Igarashi , Yoko Kuramitsu
IPC分类号： G03F7/027 , C08F20/52 , C08F220/04 , C08F220/06 , C08F220/10 , C08F220/18 , C08F220/56 , C08K5/00 , C08L33/02 , C08L33/04 , C08L33/10 , C08L33/24 , C08L33/26 , G03F7/012 , G03F7/038 , H01L21/027 , H01L21/312 , G03C5/00 , G03C1/725
CPC分类号： G03F7/0125 , Y10S430/111 , Y10S430/128
摘要： The negative-working resist composition which comprises a (meth)acrylate copolymer comprising (a) a vinyl monomer unit which contains in a side chain thereof at least one carbon--carbon double bond which does not concern itself with any polymerization reaction, but is able to be crosslinked with a crosslinking agent, (b) an acrylamide or methacrylamide monomer unit, (c) an acrylic acid or methacrylic acid monomer unit and (d) an acrylic acid or methacrylic acid adamantyl monomer unit as well as a crosslinking agent capable of being decomposed upon exposure to a patterning radiation and then causing crosslinking of said copolymer upon heating. The resist composition is particularly suitable for excimer laser lithography using an aqueous basic solution as a developer, and the formed resist patterns can exhibit a high sensitivity and excellent dry etch resistance without swelling.
摘要翻译：负极抗蚀剂组合物，其包含（甲基）丙烯酸酯共聚物，其包含（a）乙烯基单体单元，其侧链含有至少一个不涉及任何聚合反应的碳 - 碳双键，但是能够与交联剂交联，（b）丙烯酰胺或甲基丙烯酰胺单体单元，（c）丙烯酸或甲基丙烯酸单体单元和（d）丙烯酸或甲基丙烯酸金刚烷基单体单元以及能够在暴露于图案化辐射下分解，然后在加热时引起所述共聚物的交联。抗蚀剂组合物特别适合于使用碱性水溶液作为显影剂的准分子激光光刻，并且所形成的抗蚀剂图案可以表现出高灵敏度和优异的耐干蚀刻性而不溶胀。

8. 发明授权

US06013416A Chemically amplified resist compositions and process for the formation of resist patterns 失效
标题翻译：化学扩增抗蚀剂组合物和形成抗蚀剂图案的方法
公开(公告)号：US06013416A
公开(公告)日：2000-01-11
申请号：US673739
申请日：1996-06-27
申请人： Koji Nozaki , Ei Yano , Keiji Watanabe , Takahisa Namiki , Miwa Igarashi , Yoko Kuramitsu , Satoshi Takechi , Akiko Kotachi , Makoto Takahashi
发明人： Koji Nozaki , Ei Yano , Keiji Watanabe , Takahisa Namiki , Miwa Igarashi , Yoko Kuramitsu , Satoshi Takechi , Akiko Kotachi , Makoto Takahashi
IPC分类号： G03F7/004 , G03F7/039
CPC分类号： G03F7/039 , G03F7/0045
摘要： Alkali-developable, chemically amplified resist composition which comprises an alkali-insoluble, film-forming compound having a structural unit containing a protected alkali-soluble group in which unit a protective moiety of said protected alkali-soluble group is cleaved upon action of an acid generated from a photoacid generator used in combination with said compound, thereby releasing a protective moiety from the alkali-soluble group and converting said compound to an alkali-soluble one, and a photoacid generator capable of being decomposed upon exposure to a patterning radiation to thereby produce an acid capable of causing cleavage of said protective moiety. The resist composition is particularly suitable for excimer laser lithography using an alkaline developer, and the formed resist patterns can exhibit a high sensitivity and excellent dry etch resistance without swelling.
摘要翻译：碱可显影的化学放大抗蚀剂组合物，其包含具有包含受保护的碱溶性基团的结构单元的碱不溶性成膜化合物，其中所述受保护的碱溶性基团的保护部分在酸的作用下被切割由与所述化合物组合使用的光致酸产生剂产生，从而从碱溶性基团释放保护部分并将所述化合物转化为碱溶性化合物，以及能够在曝光于图案化辐射时分解的光致酸产生剂产生能够导致所述保护部分裂解的酸。抗蚀剂组合物特别适合于使用碱性显影剂的准分子激光光刻，并且所形成的抗蚀剂图案可以表现出高灵敏度和优异的耐干蚀刻性而不膨胀。

9. 发明授权

US5804354A Composition for forming conductivity imparting agent and pattern forming method 失效
标题翻译：用于形成导电性赋予剂的组合物和图案形成方法
公开(公告)号：US5804354A
公开(公告)日：1998-09-08
申请号：US876794
申请日：1997-06-16
申请人： Keiji Watanabe , Yasuhiro Yoneda , Takashi Maruyama , Keiko Yano , Tomio Nakamura , Shigeru Shimizu , Takashi Saitoh , Takahisa Namiki , Ei Yano , Miwa Igarashi , Yoko Kuramitsu
发明人： Keiji Watanabe , Yasuhiro Yoneda , Takashi Maruyama , Keiko Yano , Tomio Nakamura , Shigeru Shimizu , Takashi Saitoh , Takahisa Namiki , Ei Yano , Miwa Igarashi , Yoko Kuramitsu
IPC分类号： C08G73/02 , H01B1/12 , G03C5/00
CPC分类号： H01B1/128 , C08G73/0266 , Y10S430/143
摘要： A composition for forming a conductivity imparting agent comprising: (a) 0.1 to 20 parts by weight of sulfonated polyaniline having a content of a sulfonic acid group of 20 to 80% with respect to an aromatic ring of the sulfonated polyaniline; (b) 100 parts by weight of a solvent; (c) 0.01 to 10 parts by weight of an amine and/or quaternary ammonium salt; and (d) 0.001 to 100 parts by weight of at least one kind of a sulfonic acid group-containing component selected from the following (A) and (B); (A) compounds having a sulfonic acid group; and (B) polymers having a sulfonic acid group.
摘要翻译：一种用于形成导电性赋予剂的组合物，其包含：（a）相对于所述磺化聚苯胺的芳环，为0.1〜20重量份磺酸基含量为20〜80％的磺化聚苯胺; （b）100重量份溶剂; （c）0.01至10重量份的胺和/或季铵盐; 和（d）0.001至100重量份选自以下（A）和（B）的至少一种含磺酸基的组分; （A）具有磺酸基的化合物; 和（B）具有磺酸基的聚合物。

10. 发明授权

US06200725B1 Chemically amplified resist compositions and process for the formation of resist patterns 失效
标题翻译：化学扩增抗蚀剂组合物和形成抗蚀剂图案的方法
公开(公告)号：US06200725B1
公开(公告)日：2001-03-13
申请号：US08969368
申请日：1997-11-28
申请人： Satoshi Takechi , Akiko Kotachi , Koji Nozaki , Ei Yano , Keiji Watanabe , Takahisa Namiki , Miwa Igarashi , Yoko Makino , Makoto Takahashi
发明人： Satoshi Takechi , Akiko Kotachi , Koji Nozaki , Ei Yano , Keiji Watanabe , Takahisa Namiki , Miwa Igarashi , Yoko Makino , Makoto Takahashi
IPC分类号： G03F7039
CPC分类号： G03F7/039 , G03F7/0045
摘要： Alkali-developable, chemically amplified resist composition which comprises an alkali-insoluble compound having a structural unit containing a protected alkali-soluble group in which unit a protective moiety of said protected alkali-soluble group contains an alicyclic hydrocarbon group having bonded to a carbon atom thereof a —CH2—R1′ group wherein R1′ is methyl, ethyl, propyl or isopropyl, and said alkali-soluble group is cleaved upon action of an acid generated from a photoacid generator used in combination with said compound, thereby releasing said protective moiety from the alkali-soluble group and converting said compound to an alkali-soluble one, and a photoacid generator capable of being decomposed upon exposure to a patterning radiation to thereby produce an acid capable of causing cleavage of said protective moiety. The resist composition can exhibit a high sensitivity (not more than 5 mJ/cm2) and therefore is particularly suitable for ArF lithography and also can exhibit stable patterning properties.
摘要翻译：碱可显影的化学增幅抗蚀剂组合物，其包含具有包含受保护的碱溶性基团的结构单元的碱不溶性化合物，其中所述被保护的碱溶性基团的保护部分含有与碳原子键合的脂环族烃基其中R 1'是甲基，乙基，丙基或异丙基，并且所述碱溶性基团在与所述化合物组合使用的光致酸产生剂产生的酸作用下被切割，由此释放所述保护部分从碱溶性基团中转化为碱溶性化合物，以及光致酸发生剂，其能够在暴露于图案化辐射时分解，从而产生能够导致所述保护部分裂解的酸。抗蚀剂组合物可以表现出高灵敏度（不大于5mJ / cm 2），因此特别适用于ArF光刻，并且还可呈现稳定的图案化性能。

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