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1. 发明授权

US06955801B2 High-purity fluorine gas, production and use thereof, and method for analyzing trace impurities in high-purity fluorine gas 失效
标题翻译：高纯度氟气的生产和使用以及高纯度氟气中痕量杂质的分析方法
公开(公告)号：US06955801B2
公开(公告)日：2005-10-18
申请号：US10362876
申请日：2002-06-27
申请人： Junichi Torisu , Hitoshi Atobe , Yasuyuki Hoshino
发明人： Junichi Torisu , Hitoshi Atobe , Yasuyuki Hoshino
IPC分类号： C01B7/20 , G01N21/03 , G01N21/09 , G01N21/35 , G01N30/14 , H01S3/036 , H01S3/225 , G01N30/88
CPC分类号： G01N21/3504 , C01B7/20 , G01N21/0303 , G01N21/09 , G01N2030/143 , H01S3/036 , H01S3/225 , Y10T436/19
摘要： A step (1) of heating a fluoronickel compound to release a fluorine gas, a step (2) of allowing a fluorine gas to be occluded into a fluorinated compound, and a step (3) of heating the fluoronickel compound and reducing an inner pressure are conducted in a container, respectively, at least once, and thereafter a high-purity fluorine gas is obtained in the step (1). Also, a step (5) of heating a fluoronickel compound and reducing an inner pressure and a step (6) of allowing a fluorine gas reduced in a hydrogen fluoride content to be occluded into the fluoronickel compound are conducted in a container having a fluorinated layer formed on its surface, respectively, at least once, the step (5) is further conducted, and thereafter a fluorine gas containing impurity gases is contacted with the fluoronickel compound to fix and remove the fluorine gas, and the impurities are analyzed by gas chromatography.
摘要翻译：将氟化合物加热以释放氟气的步骤（1），允许氟气封闭到氟化合物中的步骤（2）和加热氟化合物并降低内部压力的步骤（3）分别在容器中进行至少一次，然后在步骤（1）中获得高纯度氟气。此外，将氟化合物的加热步骤（5）和内部压力降低，以及将氟化氢含量降低的氟气阻挡在氟化合物中的步骤（6）在具有氟化层的容器中进行在其表面上分别至少形成一次，进一步进行步骤（5），然后将含有杂质气体的氟气与氟化合物化合物接触以固定和除去氟气，并通过气相色谱分析杂质。

2. 发明授权

US06309618B1 Method for treating exhaust gas containing fluorine-containing interhalogen compound, and treating agent and treating apparatus 失效
标题翻译：含氟含卤化合物废气处理方法及处理剂及处理装置
公开(公告)号：US06309618B1
公开(公告)日：2001-10-30
申请号：US09429278
申请日：1999-10-28
申请人： Manabu Ohira , Junichi Torisu , Yasuyuki Hoshino , Yuji Sakai , Andrei S. Kuznetsov
发明人： Manabu Ohira , Junichi Torisu , Yasuyuki Hoshino , Yuji Sakai , Andrei S. Kuznetsov
IPC分类号： C01B700
CPC分类号： B01D53/685 , B01D2257/204 , C01B7/00 , C01B7/07 , Y10S588/90 , Y10S588/901
摘要： A treating method comprising contacting a fluorine-containing interhalogen compound first with a treating agent for the fluorine component and then with a treating agent for the halogen component, treating agents therefor, and a method for treating exhaust gas containing a fluorine-containing interhalogen compound, comprising filling a treating agent for the fluorine component into the internal cylinder of a treating apparatus having a double cylinder structure consisting of an internal cylinder and an external cylinder, filling a treating agent for the halogen component into the external cylinder, feeding exhaust gas containing a fluorine-containing interhalogen compound into the internal cylinder to travel the internal cylinder and the external cylinder in this order, and then discharging the treated gas from the external cylinder.
摘要翻译：一种处理方法，其特征在于，含氟化合物首先与氟组分的处理剂接触，然后与卤素组分的处理剂，其处理剂接触，以及含有含氟卤代化合物的废气的处理方法，包括将氟组分的处理剂填充到具有由内筒和外筒组成的双缸结构的处理装置的内筒中，将卤素组分的处理剂填充到外筒中，将含有含氟卤代化合物进入内筒，以此顺序将内筒和外筒移动，然后从外筒排出经处理的气体。

3. 发明授权

US06609540B1 Method and apparatus for supplying fluorine gas 失效
标题翻译：供应氟气的方法和装置
公开(公告)号：US06609540B1
公开(公告)日：2003-08-26
申请号：US09604016
申请日：2000-06-26
申请人： Junichi Torisu , Mituyoshi Yamazaki , Yasuyuki Hoshino , Yuji Sakai , Shunzou Nakagawa
发明人： Junichi Torisu , Mituyoshi Yamazaki , Yasuyuki Hoshino , Yuji Sakai , Shunzou Nakagawa
IPC分类号： H01S300
CPC分类号： H01S3/223 , H01S3/2258 , Y10T137/0329 , Y10T137/6525 , Y10T137/6606 , Y10T137/87652
摘要： A supplying method and a supplying apparatus for supplying fluorine gas, in which when a fluorine-occluding substance is used for the fluorine gas-generating means, a necessary amount of fluorine gas can be stably and swiftly supplied to have a uniform concentration to &a chamber of an excimer laser device or the like even at running, to say nothing of the gas exchange time. In a fluorine gas-generating means, fluorine gas is generated at the use point by controlling a fluorine-occluding substance to a predetermined temperature, the fluorine gas is introduced into a mixing container, a diluting gas is introduced into the mixing container to mix it with the fluorine gas to prepare a fluorine mixed gas having a predetermined pressure and a predetermined fluorine gas concentration, and the fluorine mixed gas reserved in the mixing container is supplied to a use side such as chamber, using the pressure difference.
摘要翻译：一种氟气的供给方法和供给装置，其中当氟气产生装置使用氟吸收物质时，可以稳定且快速地供给所需量的氟气以使其具有均匀的浓度的准分子激光装置等，即使在运行时也不说气体交换时间。在氟气产生装置中，通过将氟吸收物质控制到预定温度，在使用点产生氟气，将氟气引入混合容器中，将稀释气体引入混合容器中以混合用氟气制备具有预定压力和预定氟气浓度的氟混合气体，并且使用该压力差将保留在混合容器中的氟混合气体供应到使用侧，例如室。

4. 发明申请

US20080085604A1 Plasma Treatment Method and Plasma Etching Method 审中-公开
标题翻译：等离子体处理方法和等离子体蚀刻方法
公开(公告)号：US20080085604A1
公开(公告)日：2008-04-10
申请号：US11631597
申请日：2005-07-06
申请人： Yasuyuki Hoshino , Seiji Samukawa
发明人： Yasuyuki Hoshino , Seiji Samukawa
IPC分类号： H01L21/302
CPC分类号： H01L21/3065 , H01L21/31116 , H01L21/32137
摘要： The present invention develops a process for plasma treatment using a gas having no greenhouse effect in order to realize global environmental preservation and sophistication of plasma process performance and provides a process for plasma etching with high accuracy which process can depress damage to devices. The process for plasma treatment according to the present invention comprises the steps of feeding a treatment gas containing fluorine gas (F2) into a plasma generating chamber, alternately repeating application of high frequency electric field and stop of the application thereof to generate plasma, and carrying out substrate treatment by irradiating the plasma to a substrate. Furthermore, the substrate treatment may be carried out by individually or alternately extracting negative ions or positive ions from the plasma, or selectively extracting only negative ions, neutralizing them, to generate a neutral beam and irradiating the neutral beam to the substrate.
摘要翻译：本发明开发了一种使用不具有温室效应的气体进行等离子体处理的方法，以实现全球环境保持和等离子体处理性能的复杂化，并且以高精度提供等离子体蚀刻的方法，该方法可以抑制对器件的损害。根据本发明的等离子体处理方法包括以下步骤：将含氟气体（F 2 N 2）的处理气体进料到等离子体产生室中，交替重复施加高频电场并停止其用于产生等离子体，并通过将等离子体照射到基底上进行基板处理。此外，基板处理可以通过单独或交替地从等离子体中提取负离子或正离子，或者仅选择性地仅提取负离子，中和它们，以产生中性光束并将中性光束照射到衬底来进行。

5. 发明申请

US20050115674A1 Method for treating exhaust gas 审中-公开
标题翻译：废气处理方法
公开(公告)号：US20050115674A1
公开(公告)日：2005-06-02
申请号：US10474765
申请日：2003-02-13
申请人： Hiroyasu Taguchi , Yasuyuki Hoshino , Byoung-sup Park , Bingzhe Jin
发明人： Hiroyasu Taguchi , Yasuyuki Hoshino , Byoung-sup Park , Bingzhe Jin
IPC分类号： B01D53/68 , F23G7/06 , H01L21/302 , C23F1/00 , F23M5/00
CPC分类号： F23G7/065 , F23J2215/30
摘要： Exhaust gas containing fluorine gas or halogen fluoride gas emitted from etching or cleaning steps is burned in a combustion chamber having a fluoride passivation film formed on its surface. It is possible to treat exhaust gas emitted from semiconductor fabrication processes which contains fluorine gas or halogen fluoride gas in high concentrations or large volumes, while abatement treatment can be accomplished safely and efficiently with less energy usage.
摘要翻译：从蚀刻或清洗步骤排出的含有氟气或卤素氟化物气体的废气在其表面形成氟化物钝化膜的燃烧室中燃烧。可以以高浓度或大体积处理含有氟气或卤素氟化物气体的半导体制造工序排出的废气，同时减少能量消耗可以安全有效地实现减排处理。

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