专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US6035804A Process chamber apparatus 有权
标题翻译：处理室装置
公开(公告)号：US6035804A
公开(公告)日：2000-03-14
申请号：US186328
申请日：1998-11-05
申请人： Junichi Arami , Shosuke Endo
发明人： Junichi Arami , Shosuke Endo
IPC分类号： C23C14/00 , C23C16/44 , C23F4/00 , H01L21/00 , H01L21/203 , H01L21/205 , H01L21/302 , H01L21/3065 , C23C16/00
CPC分类号： H01L21/6719 , C23C16/44
摘要： A process chamber apparatus includes a process chamber for processing a target such as a semiconductor wafer contained therein. The chamber includes an upper process chamber section having an annular contact surface at a lower end thereof and a lower process chamber section having an annular contact surface at an upper end thereof. A support mechanism supports the process chamber such that the lower section is movable against the upper section in a lateral direction between a process position where both sections are combined with each other and a separation position where both of the sections are separated apart from each other in a lateral direction. The contact surfaces of the upper and lower process chamber sections are inclined with respect to a plane including a movement direction of the lower process chamber section and are brought into contact with each other throughout entire circumferences of the contact surfaces at the process position.
摘要翻译：处理室装置包括用于处理诸如其中所包含的半导体晶片的靶的处理室。所述腔室包括在其下端处具有环形接触表面的上处理室部分和在其上端处具有环形接触表面的下处理室部分。支撑机构支撑处理室，使得下部在两个部分彼此组合的过程位置和两个部分彼此分离的分离位置之间沿横向移动抵靠上部区域横向。上处理室部分和下处理室部分的接触表面相对于包括下处理室部分的移动方向的平面倾斜，并且在处理位置处的接触表面的整个周边彼此接触。

2. 发明申请

US20130344244A1 METHOD FOR CLEANING GAS CONVEYING DEVICE, AND METHOD AND REACTION DEVICE FOR FILM GROWTH 审中-公开
标题翻译：清洁气体输送装置的方法，以及用于膜生长的方法和反应装置
公开(公告)号：US20130344244A1
公开(公告)日：2013-12-26
申请号：US14003787
申请日：2012-03-23
申请人： Zhiyou Du , Junichi Arami , Yijun Sun
发明人： Zhiyou Du , Junichi Arami , Yijun Sun
IPC分类号： C23C16/44
CPC分类号： C23C16/4407 , B08B1/04
摘要： A method for cleaning a gas conveying device in a film growth reaction chamber is provided. The gas conveying device comprises a gas conveying surface for releasing reaction gas to the film growth reaction chamber. The film growth reaction chamber comprises a support device. The method comprises that a) a cleaning device is provided and separably installed on the support device, said cleaning device comprising a surface which is facing to the gas conveying surface and on which multiple scraping structures are distributed; b) a rotation drive device is provided, which is connected to the support device and can selectively drive the support device to rotate; c) the position of the cleaning device is adjusted so that the scraping structures contact with, at least in part, the gas conveying surface of the gas conveying device; and d) the rotation drive device is rotated to drive the cleaning device to rotate, and the scraping structures contact the gas conveying surface and remove attachments from the gas conveying surface.
摘要翻译：提供一种清洗膜生长反应室中的气体输送装置的方法。气体输送装置包括用于将反应气体释放到膜生长反应室的气体输送表面。膜生长反应室包括支撑装置。该方法包括：a）提供清洁装置并可分离地安装在支撑装置上，所述清洁装置包括面向气体输送表面并在其上分布有多个刮削结构的表面; b）提供旋转驱动装置，其连接到支撑装置并且可以选择性地驱动支撑装置旋转; c）调节清洁装置的位置，使得刮擦结构至少部分地与气体输送装置的气体输送表面接触; 以及d）旋转驱动装置旋转以驱动清洁装置旋转，并且刮削结构接触气体输送表面并从气体输送表面移除附件。

3. 发明授权

US06764575B1 Magnetron plasma processing apparatus 有权
标题翻译：磁控管等离子体处理装置
公开(公告)号：US06764575B1
公开(公告)日：2004-07-20
申请号：US10069512
申请日：2002-03-04
申请人： Tomomi Yamasaki , Hidetoshi Kimura , Junichi Arami , Hiroo Ono , Akira Koshiishi , Koji Miyata
发明人： Tomomi Yamasaki , Hidetoshi Kimura , Junichi Arami , Hiroo Ono , Akira Koshiishi , Koji Miyata
IPC分类号： C23C1434
CPC分类号： H01J37/3266 , H01J37/3408
摘要： When a substrate 30 is to be subjected to a magnetron plasma process, a dipole ring magnet 21 is provided, in which a large number of anisotropic segment magnets 22 are arranged in a ring-like shape around the outer wall of a chamber 1. A magnetic field gradient, wherein the magnetic field strength decreases from the E pole side toward the W pole side in a direction perpendicular to a magnetic field direction B, is formed in a plane perpendicular to the direction of an electric field between a pair of electrodes separated from each other. The anisotropic segment magnets have a first section a including anisotropic segment magnets arranged in the vicinity of a region A located outside an E pole side end of the process substrate with an N pole thereof being directed toward this region, and a second portion b including anisotropic segment magnets arranged with an S pole thereof being directed toward this region, to locally increase the magnetic field strengths of the first and second regions.
摘要翻译：当对基板30进行磁控管等离子体处理时，设置偶极环磁体21，其中大量的各向异性磁体22围绕室1的外壁排列成环状。其磁场强度在与磁场方向B垂直的方向从E极侧朝向W极侧的磁场强度形成在与分离的一对电极之间的电场方向垂直的面内从彼此。各向异性区段磁体具有第一区段a，其包括各向异性区段磁体，其布置在位于处理衬底的E极侧端外侧的区域A的附近，其N极指向该区域，第二部分b包括各向异性将其S极布置的段磁体指向该区域，以局部地增加第一和第二区域的磁场强度。

4. 发明授权

US5888338A Magnetron plasma processing apparatus and processing method 失效
标题翻译：磁控管等离子体处理装置及加工方法
公开(公告)号：US5888338A
公开(公告)日：1999-03-30
申请号：US827439
申请日：1997-03-27
申请人： Hiromi Harada , Sinji Kubota , Hiromi Kumagai , Junichi Arami , Keiji Horioka , Isahiro Hasegawa , Haruo Okano , Katsuya Okumura , Yukimasa Yoshida
发明人： Hiromi Harada , Sinji Kubota , Hiromi Kumagai , Junichi Arami , Keiji Horioka , Isahiro Hasegawa , Haruo Okano , Katsuya Okumura , Yukimasa Yoshida
IPC分类号： H01J37/32 , H01J37/34 , H01L21/302
CPC分类号： H01J37/32623 , H01J37/3266 , H01J37/3408 , H01J37/3452 , H01J37/3494 , H01J2237/3344
摘要： The invention provides a novel magnetron plasma processing apparatus comprising the following, a vacuum chamber storing an etching object, the first electrode which is provided in the vacuum chamber and holds the etching object, the second electrode which is disposed in opposition from the first electrode, where the first and second electrodes are in parallel with each other, a gas-supply unit feeding etching gas to the vacuum chamber, a magnetic-field generating means which is disposed on the part opposite from the first electrode in opposition from the second electrode, and a power-supply unit which feeds power to either of these first and second electrodes and generates discharge between these parallel electrodes. Magnetic-field generating means is provided with a magnetic block whose both-end surfaces are provided with magnetic poles having polarity inverse from each other, and in addition, a plane recess opposite from the second electrode is provided between both-end surfaces of the magnetic block.
摘要翻译：本发明提供了一种新颖的磁控管等离子体处理装置，其特征在于包括：存储蚀刻对象的真空室，设置在真空室中并保持蚀刻对象物的第一电极，与第一电极相对配置的第二电极，其中所述第一和第二电极彼此平行;供给单元，向所述真空室供给蚀刻气体;磁场产生装置，设置在与所述第一电极相对的与所述第二电极相对的部分上; 以及向这些第一和第二电极中的任一个供电的电源单元，并在这些平行电极之间产生放电。磁场产生装置设置有磁性块，其两端表面设置有彼此极性相反的磁极，此外，与磁体的两端面之间设置与第二电极相对的平面凹部块。

5. 发明授权

US5665260A Ceramic electrostatic chuck with built-in heater 失效
标题翻译：陶瓷静电吸盘内置加热器
公开(公告)号：US5665260A
公开(公告)日：1997-09-09
申请号：US364196
申请日：1994-12-27
申请人： Nobuo Kawada , Shoji Kano , Koji Hagiwara , Nobuo Arai , Junichi Arami , Kenji Ishikawa
发明人： Nobuo Kawada , Shoji Kano , Koji Hagiwara , Nobuo Arai , Junichi Arami , Kenji Ishikawa
IPC分类号： B23Q3/15 , C04B37/00 , C04B41/89 , H01L21/027 , H01L21/265 , H01L21/324 , H01L21/683 , H01L23/34 , H02N13/00 , H05B3/14 , H05B3/68 , H05B3/44
CPC分类号： H01L23/345 , H01L21/6833 , H05B3/143 , H01L2924/0002
摘要： A ceramic electrostatic chuck with a built-in heater having electrodes of an electroconductive ceramic bonded to a surface of a supporting substrate of an electrically conducting ceramic. A heat generating layer of an electroconductive ceramic is bonded to the other surface of the supporting substrate and a covering layer of an electrically insulating ceramic is provided thereon. Each of the supporting substrate, electrode for the electrostatic chuck and heat generating layer has a surface roughness Rmax of 5 .mu.m or larger.
摘要翻译：一种具有内置加热器的陶瓷静电卡盘，其具有与导电陶瓷的支撑基板的表面结合的导电陶瓷电极。导电陶瓷的发热层与支撑基板的另一个表面接合，并且在其上提供电绝缘陶瓷的覆盖层。支撑基板，静电卡盘和发热层用电极的表面粗糙度Rmax为5μm以上。

6. 发明授权

US5240556A Surface-heating apparatus and surface-treating method 失效
标题翻译：表面处理装置和表面处理方法
公开(公告)号：US5240556A
公开(公告)日：1993-08-31
申请号：US893018
申请日：1992-06-03
申请人： Yoshio Ishikawa , Junichi Arami , Towl Ikeda , Teruo Iwata
发明人： Yoshio Ishikawa , Junichi Arami , Towl Ikeda , Teruo Iwata
IPC分类号： C23C16/54 , H01L21/00
CPC分类号： H01L21/67207 , C23C16/54 , H01L21/67069 , H01L21/67115
摘要： According to this invention, a surface-treating apparatus capable of etching an object to be treated with high accuracy, suppressing discharging of a harmful gas deposited on the etched object in the air, and preventing the surface of the object from deposition/ attachment of reaction products and droplets is disclosed. The surface-treating apparatus includes a first process chamber for etching a loaded object to be treated by an activated etching gas, an exhausting member for setting the first process chamber at a low pressure, a cooling means for cooling the object loaded in the first process chamber, a second process chamber in which the object etched by the first process chamber is loaded, an exhausting member for setting the second process chamber at a low pressure, and an heating member for annealing the object loaded in the second process chamber.
摘要翻译：根据本发明，能够高精度地蚀刻被处理物的表面处理装置，抑制在空气中沉积在被蚀刻物上的有害气体的排出，防止物体的表面沉积/附着反应产品和液滴被公开。表面处理装置包括用于蚀刻被激活的蚀刻气体处理的被加载物体的第一处理室，用于将第一处理室设置在低压的排出构件，用于冷却在第一处理中加载的物体的冷却装置第二处理室，其中装载有由第一处理室蚀刻的物体，用于将第二处理室设置在低压的排气构件，以及用于对装载在第二处理室中的物体进行退火的加热构件。

7. 发明授权

US07481902B2 Substrate processing apparatus and method, high speed rotary valve and cleaning method 失效
标题翻译：基板加工装置及方法，高速旋转阀及清洗方法
公开(公告)号：US07481902B2
公开(公告)日：2009-01-27
申请号：US10946511
申请日：2004-09-20
申请人： Hiroshi Shinriki , Junichi Arami
发明人： Hiroshi Shinriki , Junichi Arami
IPC分类号： H01L21/00 , C23C16/00 , C23C14/00
CPC分类号： H01L21/0228 , B08B7/0035 , C23C16/4405 , C23C16/4412 , C23C16/45504 , C23C16/45536 , C23C16/45548 , F16K5/0407 , F16K5/0414 , F16K51/02 , H01L21/02277 , H01L21/31691
摘要： A substrate processing apparatus includes a processing vessel provided with a stage holding thereon a substrate to be processed and evacuated at an evacuation port, and a source gas supplying system that supplies plural source gases to the processing vessel separately in the form of a laminar flow, wherein the evacuation port has a slit-form shape extending in a direction generally intersecting perpendicularly to a direction of the laminar flow, the evacuation port is engaged with a valve having a valve body formed with a slit-form opening corresponding to the slit-form shape of the evacuation port, the slit-form opening being provided so as to cause a displacement with respect to the evacuation port in a direction generally intersecting perpendicularly to an extending direction of the evacuation port, the valve changing a degree of valve opening thereof via displacement of said slit-form opening.
摘要翻译：基板处理装置包括：处理容器，其设置有在其上排出的待处理和抽真空基板的台，以及以层流形式分别供给到处理容器中的多个源气体的源气体供给系统，其特征在于，所述排气口具有沿着与所述层流方向大致垂直的方向延伸的狭缝形状，所述排气口与具有形成有与所述狭缝形状对应的狭缝状开口的阀体的阀卡合排气口的形状，狭缝形状的开口被设置成在垂直于抽空口的延伸方向大致相交的方向上引起相对于排气口的位移，阀改变其开阀程度，经由所述狭缝形开口的位移。

8. 发明申请

US20050074983A1 Substrate processing apparatus and substrate processing method, high speed rotary valve, and cleaning method 失效
标题翻译：基板加工装置和基板处理方法，高速旋转阀和清洗方法
公开(公告)号：US20050074983A1
公开(公告)日：2005-04-07
申请号：US10946511
申请日：2004-09-20
申请人： Hiroshi Shinriki , Junichi Arami
发明人： Hiroshi Shinriki , Junichi Arami
IPC分类号： H01L21/31 , B08B7/00 , C23C16/44 , C23C16/455 , F16K5/04 , F16K51/02 , H01L21/316 , C23C16/00
CPC分类号： H01L21/0228 , B08B7/0035 , C23C16/4405 , C23C16/4412 , C23C16/45504 , C23C16/45536 , C23C16/45548 , F16K5/0407 , F16K5/0414 , F16K51/02 , H01L21/02277 , H01L21/31691
摘要： A substrate processing apparatus includes a processing vessel provided with a stage holding thereon a substrate to be processed and evacuated at an evacuation port, and a source gas supplying system that supplies plural source gases to the processing vessel separately in the form of a laminar flow, wherein the evacuation port has a slit-form shape extending in a direction generally intersecting perpendicularly to a direction of the laminar flow, the evacuation port is engaged with a valve having a valve body formed with a slit-form opening corresponding to the slit-form shape of the evacuation port, the slit-form opening being provided so as to cause a displacement with respect to the evacuation port in a direction generally intersecting perpendicularly to an extending direction of the evacuation port, the valve changing a degree of valve opening thereof via displacement of said slit-form opening.
摘要翻译：基板处理装置包括：处理容器，其设置有在其上排出的待处理和抽真空基板的台，以及以层流形式分别供给到处理容器中的多个源气体的源气体供给系统，其特征在于，所述排气口具有沿着与所述层流方向大致垂直的方向延伸的狭缝形状，所述排气口与具有形成有与所述狭缝形状对应的狭缝状开口的阀体的阀卡合排气口的形状，狭缝形状的开口被设置成在垂直于抽空口的延伸方向大致相交的方向上引起相对于排气口的位移，阀改变其开阀程度，经由所述狭缝形开口的位移。

9. 发明授权

US6014943A Plasma process device 失效
标题翻译：等离子体处理装置
公开(公告)号：US6014943A
公开(公告)日：2000-01-18
申请号：US928026
申请日：1997-09-11
申请人： Junichi Arami , Hiroo Ono , Tomomi Kondo , Koji Miyata
发明人： Junichi Arami , Hiroo Ono , Tomomi Kondo , Koji Miyata
IPC分类号： H01J37/32 , C23C16/00
CPC分类号： H01J37/32082 , H01J37/32623 , H01J37/3266
摘要： A plasma process device includes a process vessel having a plasma generating area therein, a susceptor provided in the process vessel for supporting a substrate having a process surface, and a gas inlet means for introducing a process gas into the plasma generating area. A dipole ring magnet is arranged around the outer periphery of the process vessel, for generating a magnetic field having a magnetic line of force in the plasma generating area, so that a plasma of the process gas is generated in the plasma generating area. The dipole ring magnet has a plurality of anisotropic segment magnets arranged on an oval track, which are cylindrical permanent magnets having the same shape and size and magnetized in the diameter direction.
摘要翻译：等离子体处理装置包括其中具有等离子体产生区域的处理容器，设置在处理容器中的基座，用于支撑具有工艺表面的衬底，以及用于将工艺气体引入等离子体产生区域的气体入口装置。偶极环磁体布置在处理容器的外周周围，用于在等离子体产生区域中产生具有磁力线的磁场，从而在等离子体产生区域中产生处理气体的等离子体。偶极环磁体具有设置在椭圆形轨道上的多个各向异性分段磁体，它们是具有相同形状和尺寸的圆柱形永磁体，并且在直径方向上被磁化。

10. 发明授权

US5904872A Heating device, method of manufacturing the same, and processing apparatus using the same 失效
标题翻译：加热装置及其制造方法以及使用其的加工装置
公开(公告)号：US5904872A
公开(公告)日：1999-05-18
申请号：US534312
申请日：1995-09-27
申请人： Junichi Arami , Kenji Ishikawa , Harunori Ushikawa , Isao Yanagisawa , Nobuo Kawada , Hiroshi Mogi
发明人： Junichi Arami , Kenji Ishikawa , Harunori Ushikawa , Isao Yanagisawa , Nobuo Kawada , Hiroshi Mogi
IPC分类号： C23C16/46 , H01L21/00 , H05B3/26 , H05B3/28 , H05B3/68 , C23C16/00 , H05B3/00
CPC分类号： C23C16/466 , C23C16/46 , H01L21/67103 , H05B3/265 , H05B3/283 , Y10T29/49083
摘要： A heating device is formed by a heating plate formed of silica and having a heating surface for heating an object to be heated, a heating element having a predetermined pattern and fixed to a surface opposing the heating surface of the heating plate, and a reflecting plate formed of silica and brought into tight contact with the surface of the heating plate on which the heating element is formed. This heating device is arranged in a processing vessel in a CVD apparatus, and a semiconductor wafer is placed on the heating device. A process gas is supplied into the processing vessel while the semiconductor wafer is heated, thereby forming a predetermined film on the semiconductor wafer.
摘要翻译：加热装置由二氧化硅形成的加热板形成，具有用于加热待加热物体的加热面，具有预定图案的加热元件，并固定在与加热板的加热面相对的面上，反射板由二氧化硅形成并与形成有加热元件的加热板的表面紧密接触。该加热装置配置在CVD装置的处理容器中，将半导体晶片放置在加热装置上。在加热半导体晶片的同时，将处理气体供给到处理容器中，从而在半导体晶片上形成规定的膜。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式