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1. 发明申请

US20060292810A1 Method of manufacturing a capacitor 审中-公开
标题翻译：制造电容器的方法
公开(公告)号：US20060292810A1
公开(公告)日：2006-12-28
申请号：US11448769
申请日：2006-06-08
申请人： Jung-Hun Seo , Hyun-Young Kim , Young-Wook Park , Jin-Gi Hong , Kun-Sang Park , Jin-Ho Kim , Kyung-Bum Koo
发明人： Jung-Hun Seo , Hyun-Young Kim , Young-Wook Park , Jin-Gi Hong , Kun-Sang Park , Jin-Ho Kim , Kyung-Bum Koo
IPC分类号： H01L21/20
CPC分类号： H01L28/91 , H01L21/28562 , H01L27/10817 , H01L27/10852
摘要： In methods of manufacturing capacitors, a first metal compound may be deposited on a substrate using first and second source gases. The first and the second source gases may be provided onto the substrate by a first flow rate ratio in which a deposition rate of the first metal compound by surface reaction between the source gases is higher than that by mass transfer between the source gases. A second metal compound may be deposited on the first metal compound and undesired materials may be removed by providing the source gases with a second flow rate ratio different from the first flow rate ratio. Depositing the first and the second metal compounds may be repeated to form a lower electrode. A dielectric layer and an upper electrode may be formed on the lower electrode. Accordingly, permeation of an etching liquid or gas may be reduced during an etching process.
摘要翻译：在制造电容器的方法中，可以使用第一和第二源气体在基板上沉积第一金属化合物。可以通过第一流量比将第一和第二源气体提供到基底上，其中通过源气体之间的表面反应使第一金属化合物的沉积速率高于源气体之间的质量传递的沉积速率。可以将第二金属化合物沉积在第一金属化合物上，并且可以通过提供不同于第一流速比的第二流量比来提供源气体来除去不需要的物质。可以重复沉积第一和第二金属化合物以形成下电极。电介质层和上电极可以形成在下电极上。因此，在蚀刻过程中可能会减少蚀刻液体或气体的渗透。

2. 发明申请

US20060128127A1 Method of depositing a metal compound layer and apparatus for depositing a metal compound layer 审中-公开
标题翻译：沉积金属化合物层的方法和沉积金属化合物层的装置
公开(公告)号：US20060128127A1
公开(公告)日：2006-06-15
申请号：US11290648
申请日：2005-12-01
申请人： Jung-Hun Seo , Young-Wook Park , Jin-Gi Hong , Kyung-Bum Koo , Eun-Taeck Lee
发明人： Jung-Hun Seo , Young-Wook Park , Jin-Gi Hong , Kyung-Bum Koo , Eun-Taeck Lee
IPC分类号： H01L21/20
CPC分类号： H01L21/28562 , C23C16/34 , C23C16/45523 , C23C16/45561 , C23C16/45565 , C23C16/45574
摘要： In a method and an apparatus for depositing a metal compound layer, a first source gas and a second source gas may be provided onto a substrate to deposit a first metal compound layer on the substrate. The first source gas may include a metal and halogen elements, and the second source gas may include a first material capable of being reacted with the metal and a second material capable of being reacted with the halogen element. The first and the second source gases may be provided at a first flow rate ratio. A second metal compound layer may be deposited on the first metal compound layer by providing the first and the second source gases with a second flow rate ratio different from the first flow rate ratio. The apparatus may include a process chamber configured to receive a substrate, a gas supply system, and a flow rate control device.
摘要翻译：在用于沉积金属化合物层的方法和装置中，可以将第一源气体和第二源气体提供到衬底上以在衬底上沉积第一金属化合物层。第一源气体可以包括金属和卤素元素，并且第二源气体可以包括能够与金属反应的第一材料和能够与卤素元素反应的第二材料。第一和第二源气体可以以第一流量比提供。可以通过使第一和第二源气体具有与第一流量比不同的第二流量比，将第二金属化合物层沉积在第一金属化合物层上。该装置可以包括被配置为接收基板，气体供应系统和流量控制装置的处理室。

3. 发明申请

US20070042132A1 Method of forming plasma and method of forming a layer using the same 审中-公开
标题翻译：形成等离子体的方法和使用其形成层的方法
公开(公告)号：US20070042132A1
公开(公告)日：2007-02-22
申请号：US11450455
申请日：2006-06-12
申请人： Jung-Hun Seo , Young-Wook Park , JIn-Gi Hong , Kyung-Bum Koo , Eun-Taeck Lee , Yun-Ho Choi
发明人： Jung-Hun Seo , Young-Wook Park , JIn-Gi Hong , Kyung-Bum Koo , Eun-Taeck Lee , Yun-Ho Choi
IPC分类号： H05H1/24 , C03C15/00
CPC分类号： C23C16/5096 , C23C16/14 , C23C16/34 , H01L21/28556 , H01L21/76841 , H01L21/76856
摘要： A method of forming plasma used in a process of manufacturing a semiconductor device and a method of forming a layer for a semiconductor device using the plasma are disclosed. The plasma forming method includes forming a plasma region in a sealed space by supplying a plasma source gas into the sealed space at a first flow rate and maintaining the plasma region by supplying a plasma maintenance gas into the sealed space at a second flow rate higher than the first flow rate. The plasma source gas includes a first gas having a first atomic weight, and the plasma maintenance gas includes a second gas having a second atomic weight lower than the first atomic weight. The plasma source gas includes argon and the plasma maintenance gas includes helium. The method may further include forming the layer on a wafer by supplying a source gas into the sealed space.
摘要翻译：公开了一种在制造半导体器件的工艺中使用的形成等离子体的方法以及使用该等离子体形成半导体器件层的方法。等离子体形成方法包括在密封空间中形成等离子体区域，通过以等于第一流量的方式将密封空间中的等离子体源气体以第一流量提供，并通过以等于或等于第一流量。等离子体源气体包括具有第一原子量的第一气体，等离子体维持气体包括具有比第一原子量低的第二原子量的第二气体。等离子体源气体包括氩气，等离子体维持气体包括氦气。该方法还可以包括通过将源气体供应到密封空间中在晶片上形成该层。

4. 发明申请

US20060137607A1 Combination of showerhead and temperature control means for controlling the temperature of the showerhead, and deposition apparatus having the same 审中-公开
标题翻译：淋浴头和温度控制装置的组合，用于控制喷头的温度和具有该喷淋头的沉积设备
公开(公告)号：US20060137607A1
公开(公告)日：2006-06-29
申请号：US11317092
申请日：2005-12-27
申请人： Jung-Hun Seo , Young-Wook Park , Jin-Gi Hong , Kyung-Bum Koo , Eun-Taeck Lee , Yun-Ho Choi
发明人： Jung-Hun Seo , Young-Wook Park , Jin-Gi Hong , Kyung-Bum Koo , Eun-Taeck Lee , Yun-Ho Choi
IPC分类号： C23C16/00 , C23F1/00 , H01L21/306
CPC分类号： C23C16/5096 , C23C16/14 , C23C16/45565 , C23C16/4557 , C23C16/45572 , C23C16/56 , H01J37/3244 , H01J37/32522 , H01L21/32051
摘要： A chemical vapor deposition apparatus has a showerhead, and temperature control apparatus including a heater and a heat dissipation plate for regulating the temperature of the showerhead. The showerhead includes a bottom plate having gas spray openings, and an upper plate. The heater is disposed on an upper plate of the showerhead. The heat dissipation plate contacts an upper portion of the upper plate of the showerhead above the heater so that heat dissipates from the showerhead through the plate. The temperature control apparatus also includes a coolant system by which coolant is fed into a space defined between the heater and the heat dissipation plate. The temperature of the showerhead is precisely controlled using the heater, the heat dissipation plate and the coolant system.
摘要翻译：化学气相沉积装置具有喷头和温度控制装置，其包括用于调节喷头温度的加热器和散热板。喷头包括具有气体喷射开口的底板和上板。加热器设置在喷头的上板上。散热板在加热器上方接触喷头上部板的上部，从而从喷头通过板片散热。温度控制装置还包括冷却剂系统，通过该冷却剂系统将冷却剂供给到在加热器和散热板之间限定的空间中。使用加热器，散热板和冷却剂系统精确控制喷头的温度。

5. 发明申请

US20060096541A1 Apparatus and method of forming a layer on a semiconductor substrate 审中-公开
标题翻译：在半导体衬底上形成层的装置和方法
公开(公告)号：US20060096541A1
公开(公告)日：2006-05-11
申请号：US11258673
申请日：2005-10-25
申请人： Jung-Hun Seo , Young-Wook Park , Jin-Gi Hong , Kyung-Bum Koo , Eun-Taeck Lee
发明人： Jung-Hun Seo , Young-Wook Park , Jin-Gi Hong , Kyung-Bum Koo , Eun-Taeck Lee
IPC分类号： C23C16/00
CPC分类号： C23C16/34 , C23C16/4408 , C23C16/4482 , C23C16/45561 , C23C16/45565
摘要： In an apparatus for forming a layer, the apparatus includes a processing chamber, a chuck, a gas-supplying unit, and a pipe unit. The chuck for supporting a substrate is disposed in the processing chamber. The gas-supplying unit supplies a source gas for forming a layer on the substrate and a purge gas for purging the inside of the processing chamber to the processing chamber. The pipe unit transfers the source gas and the purge gas to the processing chamber at a temperature that falls between the temperature of condensation and a reaction temperature for the source gas so that condensation or deposition reaction does not occur until the source gas enters the processing chamber. A heater located outside of the chamber heats the purge gas that is supplied to the processing chamber to a predetermined temperature.
摘要翻译：在用于形成层的装置中，该装置包括处理室，卡盘，气体供应单元和管道单元。用于支撑基板的卡盘设置在处理室中。气体供给单元将用于在基板上形成层的源气体和用于向处理室吹扫处理室内部的净化气体。管单元将源气体和净化气体以处于冷凝温度和源气体的反应温度之间的温度转移到处理室，使得在气体进入处理室之前不发生冷凝或沉积反应。位于室外的加热器将提供给处理室的吹扫气体加热到预定温度。

6. 发明授权

US08366827B2 Chamber inserts and apparatuses for processing a substrate 有权
标题翻译：腔体插入件和用于处理衬底的装置
公开(公告)号：US08366827B2
公开(公告)日：2013-02-05
申请号：US11447933
申请日：2006-06-07
申请人： Jung-Hun Seo , Jin-Gi Hong , Kyung-Bum Koo , Yun-Ho Choi , Eun-Taeck Lee , Hyun Chul Kwun
发明人： Jung-Hun Seo , Jin-Gi Hong , Kyung-Bum Koo , Yun-Ho Choi , Eun-Taeck Lee , Hyun Chul Kwun
IPC分类号： C23C16/00 , C23F1/00 , H01L21/306
CPC分类号： H01L21/68721 , C23C16/44 , C23C16/4408 , C23C16/45519 , C23C16/45591 , Y10T29/41
摘要： Disclosed are chamber inserts and apparatuses using the chamber inserts. A chamber insert may include a cylindrical body portion including a top end portion and a bottom end portion, a first protruding portion extending outwardly from a first portion of the cylindrical body portion, the first portion positioned circumferentially along the cylindrical body portion and a second protruding portion extending outwardly from a second portion of the cylindrical body portion, the second portion positioned circumferentially along less than all of the cylindrical body portion. In another example, the chamber insert may include a cylindrical body portion including a top end portion and a bottom end portion, the cylindrical body portion including a slit and at least one hole, the slit and the at least one hole positioned circumferentially along the cylindrical body portion and a first protruding portion extending outwardly from a first portion of the cylindrical body portion.
摘要翻译：公开了使用腔室插入件的腔室插入件和装置。腔室插入件可以包括包括顶端部分和底端部分的圆柱形主体部分，从圆柱形主体部分的第一部分向外延伸的第一突出部分，沿着圆柱形主体部分周向定位的第一部分和第二突出部分该部分从圆柱形主体部分的第二部分向外延伸，第二部分沿着比圆柱形主体部分的全部圆周方向定位。在另一示例中，腔室插入件可以包括包括顶端部分和底端部分的圆柱体部分，该圆柱形主体部分包括狭缝和至少一个孔，所述狭缝和至少一个孔沿着圆柱形主体部分和从圆柱形主体部分的第一部分向外延伸的第一突出部分。

7. 发明申请

US20070000109A1 Chamber inserts and apparatuses for processing a substrate 有权
标题翻译：腔体插入件和用于处理衬底的装置
公开(公告)号：US20070000109A1
公开(公告)日：2007-01-04
申请号：US11447933
申请日：2006-06-07
申请人： Jung-Hun Seo , Jin-Gi Hong , Kyung-Bum Koo , Yun-Ho Choi , Eun-Taeck Lee , Hyun Kwun
发明人： Jung-Hun Seo , Jin-Gi Hong , Kyung-Bum Koo , Yun-Ho Choi , Eun-Taeck Lee , Hyun Kwun
IPC分类号： H01L21/00
CPC分类号： H01L21/68721 , C23C16/44 , C23C16/4408 , C23C16/45519 , C23C16/45591 , Y10T29/41
摘要： Chamber inserts and apparatuses for processing a substrate. In an example, the chamber insert may include a cylindrical body portion including an open top end portion and an open bottom end portion, a first protruding portion extending outwardly from a first portion of the cylindrical body portion, the first portion positioned circumferentially along the cylindrical body portion and a second protruding portion extending outwardly from a second portion of the cylindrical body portion, the second portion positioned circumferentially along less than all of the cylindrical body portion. In another example, the chamber insert may include a cylindrical body portion including an open top end portion and an open bottom end portion, the cylindrical body portion including a slit and at least one hole, the slit and the at least one hole positioned circumferentially along the cylindrical body portion and a first protruding portion extending outwardly from a first portion of the cylindrical body portion. The apparatuses may include the chamber inserts according to either of the above-described examples.
摘要翻译：腔体插入件和用于处理衬底的装置。在一个示例中，腔室插入件可以包括圆柱形主体部分，其包括敞开的顶端部分和敞开的底部端部，从圆柱形主体部分的第一部分向外延伸的第一突出部分，沿着圆柱体主体部分和从圆柱形主体部分的第二部分向外延伸的第二突出部分，第二部分沿着小于全部圆柱形主体部分周向定位。在另一示例中，腔室插入件可以包括圆柱形主体部分，其包括敞开的顶端部分和敞开的底端部分，所述圆柱形主体部分包括狭缝和至少一个孔，所述狭缝和所述至少一个孔周向沿着圆柱体部分和从圆柱形主体部分的第一部分向外延伸的第一突出部分。这些装置可以包括根据上述示例中的任一个的腔室插入件。

8. 发明申请

US20050118806A1 Method for forming an electrical interconnection providing improved surface morphology of tungsten 有权
标题翻译：形成提供钨的改进的表面形态的电互连的方法
公开(公告)号：US20050118806A1
公开(公告)日：2005-06-02
申请号：US11028348
申请日：2005-01-03
申请人： Kyung-Bum Koo
发明人： Kyung-Bum Koo
IPC分类号： H01L21/285 , H01L21/3205 , H01L21/20 , H01L21/44
CPC分类号： H01L21/28556 , H01L21/32051
摘要： In a fabrication method for forming an electrical interconnection of CVD tungsten film, a contact hole is formed in a dielectric layer. A lower conductive layer is formed in the contact hole and over the dielectric layer. A portion of the lower conductive layer is removed. As a result, the dielectric layer is exposed. An upper conductive layer is formed over the lower conductive layer and over the dielectric layer. The lower conductive layer has a rough surface and the upper conductive layer has a smooth surface. In this manner, following patterning of conductive stripes over the conductive layer, residue is mitigated, and thus, inadvertent interconnection of neighboring stripes is eliminated.
摘要翻译：在形成CVD钨膜的电互连的制造方法中，在电介质层中形成接触孔。在接触孔中和介电层上形成下导电层。去除下导电层的一部分。结果，电介质层被暴露。上导电层形成在下导电层上方和介电层上。下导电层具有粗糙表面，上导电层具有光滑的表面。以这种方式，在导电层之上的导电条纹图案化之后，残留物被减轻，因此消除了相邻条纹的无意互连。

9. 发明授权

US06908848B2 Method for forming an electrical interconnection providing improved surface morphology of tungsten 有权
公开(公告)号：US06908848B2
公开(公告)日：2005-06-21
申请号：US10385077
申请日：2003-03-10
申请人： Kyung-Bum Koo
发明人： Kyung-Bum Koo
IPC分类号： H01L21/285 , H01L21/3205 , H01L21/4763
CPC分类号： H01L21/28556 , H01L21/32051
摘要： In a fabrication method for forming an electrical interconnection of CVD tungsten film, a contact hole is formed in a dielectric layer. A lower conductive layer is formed in the contact hole and over the dielectric layer. A portion of the lower conductive layer is removed. As a result, the dielectric layer is exposed. An upper conductive layer is formed over the lower conductive layer and over the dielectric layer. The lower conductive layer has a rough surface and the upper conductive layer has a smooth surface. In this manner, following patterning of conductive stripes over the conductive layer, residue is mitigated, and thus, inadvertent interconnection of neighboring stripes is eliminated.

10. 发明授权

US06451691B2 Methods of manufacturing a metal pattern of a semiconductor device which include forming nitride layer at exposed sidewalls of Ti layer of the pattern 失效
标题翻译：制造半导体器件的金属图案的方法，其包括在图案的Ti层的暴露的侧壁处形成氮化物层
公开(公告)号：US06451691B2
公开(公告)日：2002-09-17
申请号：US09794616
申请日：2001-02-28
申请人： Won-Sang Song , In-Sun Park , Kyung-Bum Koo , Young-Cheon Kim
发明人： Won-Sang Song , In-Sun Park , Kyung-Bum Koo , Young-Cheon Kim
IPC分类号： H01L2144
CPC分类号： H01L21/76885 , H01L21/76834 , H01L21/76838 , H01L21/76843 , H01L21/76852 , H01L21/76856 , H01L21/76867
摘要： A method of manufacturing a metal pattern of a semiconductor device. A Ti layer and a metal layer are successively formed on a semiconductor substrate or on an insulating layer. Then, a wiring pattern including a Ti layer pattern and a metal layer pattern is formed by patterning said Ti layer and the metal layer. Heat treating is employed under an atmosphere of a compound including nitrogen in order to react an exposed portion of the Ti layer pattern to form TiN as a main product, thereby increasing the stability and adhesiveness of the metal layer for subsequent processes.
摘要翻译：一种制造半导体器件的金属图案的方法。在半导体衬底或绝缘层上依次形成Ti层和金属层。然后，通过图案化所述Ti层和金属层来形成包括Ti层图案和金属层图案的布线图案。在包括氮的化合物的气氛下进行热处理，以使Ti层图案的暴露部分反应形成TiN作为主要产物，从而提高后续工艺中金属层的稳定性和粘附性。

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