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1. 发明申请

US20070042132A1 Method of forming plasma and method of forming a layer using the same 审中-公开
标题翻译：形成等离子体的方法和使用其形成层的方法
公开(公告)号：US20070042132A1
公开(公告)日：2007-02-22
申请号：US11450455
申请日：2006-06-12
申请人： Jung-Hun Seo , Young-Wook Park , JIn-Gi Hong , Kyung-Bum Koo , Eun-Taeck Lee , Yun-Ho Choi
发明人： Jung-Hun Seo , Young-Wook Park , JIn-Gi Hong , Kyung-Bum Koo , Eun-Taeck Lee , Yun-Ho Choi
IPC分类号： H05H1/24 , C03C15/00
CPC分类号： C23C16/5096 , C23C16/14 , C23C16/34 , H01L21/28556 , H01L21/76841 , H01L21/76856
摘要： A method of forming plasma used in a process of manufacturing a semiconductor device and a method of forming a layer for a semiconductor device using the plasma are disclosed. The plasma forming method includes forming a plasma region in a sealed space by supplying a plasma source gas into the sealed space at a first flow rate and maintaining the plasma region by supplying a plasma maintenance gas into the sealed space at a second flow rate higher than the first flow rate. The plasma source gas includes a first gas having a first atomic weight, and the plasma maintenance gas includes a second gas having a second atomic weight lower than the first atomic weight. The plasma source gas includes argon and the plasma maintenance gas includes helium. The method may further include forming the layer on a wafer by supplying a source gas into the sealed space.
摘要翻译：公开了一种在制造半导体器件的工艺中使用的形成等离子体的方法以及使用该等离子体形成半导体器件层的方法。等离子体形成方法包括在密封空间中形成等离子体区域，通过以等于第一流量的方式将密封空间中的等离子体源气体以第一流量提供，并通过以等于或等于第一流量。等离子体源气体包括具有第一原子量的第一气体，等离子体维持气体包括具有比第一原子量低的第二原子量的第二气体。等离子体源气体包括氩气，等离子体维持气体包括氦气。该方法还可以包括通过将源气体供应到密封空间中在晶片上形成该层。

2. 发明申请

US20060137607A1 Combination of showerhead and temperature control means for controlling the temperature of the showerhead, and deposition apparatus having the same 审中-公开
标题翻译：淋浴头和温度控制装置的组合，用于控制喷头的温度和具有该喷淋头的沉积设备
公开(公告)号：US20060137607A1
公开(公告)日：2006-06-29
申请号：US11317092
申请日：2005-12-27
申请人： Jung-Hun Seo , Young-Wook Park , Jin-Gi Hong , Kyung-Bum Koo , Eun-Taeck Lee , Yun-Ho Choi
发明人： Jung-Hun Seo , Young-Wook Park , Jin-Gi Hong , Kyung-Bum Koo , Eun-Taeck Lee , Yun-Ho Choi
IPC分类号： C23C16/00 , C23F1/00 , H01L21/306
CPC分类号： C23C16/5096 , C23C16/14 , C23C16/45565 , C23C16/4557 , C23C16/45572 , C23C16/56 , H01J37/3244 , H01J37/32522 , H01L21/32051
摘要： A chemical vapor deposition apparatus has a showerhead, and temperature control apparatus including a heater and a heat dissipation plate for regulating the temperature of the showerhead. The showerhead includes a bottom plate having gas spray openings, and an upper plate. The heater is disposed on an upper plate of the showerhead. The heat dissipation plate contacts an upper portion of the upper plate of the showerhead above the heater so that heat dissipates from the showerhead through the plate. The temperature control apparatus also includes a coolant system by which coolant is fed into a space defined between the heater and the heat dissipation plate. The temperature of the showerhead is precisely controlled using the heater, the heat dissipation plate and the coolant system.
摘要翻译：化学气相沉积装置具有喷头和温度控制装置，其包括用于调节喷头温度的加热器和散热板。喷头包括具有气体喷射开口的底板和上板。加热器设置在喷头的上板上。散热板在加热器上方接触喷头上部板的上部，从而从喷头通过板片散热。温度控制装置还包括冷却剂系统，通过该冷却剂系统将冷却剂供给到在加热器和散热板之间限定的空间中。使用加热器，散热板和冷却剂系统精确控制喷头的温度。

3. 发明申请

US20060128127A1 Method of depositing a metal compound layer and apparatus for depositing a metal compound layer 审中-公开
标题翻译：沉积金属化合物层的方法和沉积金属化合物层的装置
公开(公告)号：US20060128127A1
公开(公告)日：2006-06-15
申请号：US11290648
申请日：2005-12-01
申请人： Jung-Hun Seo , Young-Wook Park , Jin-Gi Hong , Kyung-Bum Koo , Eun-Taeck Lee
发明人： Jung-Hun Seo , Young-Wook Park , Jin-Gi Hong , Kyung-Bum Koo , Eun-Taeck Lee
IPC分类号： H01L21/20
CPC分类号： H01L21/28562 , C23C16/34 , C23C16/45523 , C23C16/45561 , C23C16/45565 , C23C16/45574
摘要： In a method and an apparatus for depositing a metal compound layer, a first source gas and a second source gas may be provided onto a substrate to deposit a first metal compound layer on the substrate. The first source gas may include a metal and halogen elements, and the second source gas may include a first material capable of being reacted with the metal and a second material capable of being reacted with the halogen element. The first and the second source gases may be provided at a first flow rate ratio. A second metal compound layer may be deposited on the first metal compound layer by providing the first and the second source gases with a second flow rate ratio different from the first flow rate ratio. The apparatus may include a process chamber configured to receive a substrate, a gas supply system, and a flow rate control device.
摘要翻译：在用于沉积金属化合物层的方法和装置中，可以将第一源气体和第二源气体提供到衬底上以在衬底上沉积第一金属化合物层。第一源气体可以包括金属和卤素元素，并且第二源气体可以包括能够与金属反应的第一材料和能够与卤素元素反应的第二材料。第一和第二源气体可以以第一流量比提供。可以通过使第一和第二源气体具有与第一流量比不同的第二流量比，将第二金属化合物层沉积在第一金属化合物层上。该装置可以包括被配置为接收基板，气体供应系统和流量控制装置的处理室。

4. 发明申请

US20060096541A1 Apparatus and method of forming a layer on a semiconductor substrate 审中-公开
标题翻译：在半导体衬底上形成层的装置和方法
公开(公告)号：US20060096541A1
公开(公告)日：2006-05-11
申请号：US11258673
申请日：2005-10-25
申请人： Jung-Hun Seo , Young-Wook Park , Jin-Gi Hong , Kyung-Bum Koo , Eun-Taeck Lee
发明人： Jung-Hun Seo , Young-Wook Park , Jin-Gi Hong , Kyung-Bum Koo , Eun-Taeck Lee
IPC分类号： C23C16/00
CPC分类号： C23C16/34 , C23C16/4408 , C23C16/4482 , C23C16/45561 , C23C16/45565
摘要： In an apparatus for forming a layer, the apparatus includes a processing chamber, a chuck, a gas-supplying unit, and a pipe unit. The chuck for supporting a substrate is disposed in the processing chamber. The gas-supplying unit supplies a source gas for forming a layer on the substrate and a purge gas for purging the inside of the processing chamber to the processing chamber. The pipe unit transfers the source gas and the purge gas to the processing chamber at a temperature that falls between the temperature of condensation and a reaction temperature for the source gas so that condensation or deposition reaction does not occur until the source gas enters the processing chamber. A heater located outside of the chamber heats the purge gas that is supplied to the processing chamber to a predetermined temperature.
摘要翻译：在用于形成层的装置中，该装置包括处理室，卡盘，气体供应单元和管道单元。用于支撑基板的卡盘设置在处理室中。气体供给单元将用于在基板上形成层的源气体和用于向处理室吹扫处理室内部的净化气体。管单元将源气体和净化气体以处于冷凝温度和源气体的反应温度之间的温度转移到处理室，使得在气体进入处理室之前不发生冷凝或沉积反应。位于室外的加热器将提供给处理室的吹扫气体加热到预定温度。

5. 发明申请

US20060045970A1 ALD thin film deposition apparatus and thin film deposition method using same 审中-公开
标题翻译： ALD薄膜沉积装置和使用其的薄膜沉积方法
公开(公告)号：US20060045970A1
公开(公告)日：2006-03-02
申请号：US11216431
申请日：2005-08-30
申请人： Jung-Hun Seo , Young-Wook Park , Jin-Gi Hong , Eun-Taeck Lee
发明人： Jung-Hun Seo , Young-Wook Park , Jin-Gi Hong , Eun-Taeck Lee
IPC分类号： C23C16/00
CPC分类号： C23C16/45544
摘要： An atomic layer deposition (ALD) thin film deposition apparatus is provided. The atomic layer deposition (ALD) thin film deposition apparatus comprises a reactor including a support on which at least one substrate is placed and a member from which gases are sprayed, a first reaction gas supply line which is coupled with a first reaction gas supply portion which allows a first reaction gas to flow from the first reaction gas supply portion to the reactor, a second reaction gas supply line which is coupled with a second reaction gas supply portion which allows a second reaction gas to flow from the second reaction gas supply portion to the reactor for reacting with the first reaction gas, a purge gas supply line which is coupled with a purge gas supply portion and allows a purge gas to flow from the purge gas supply portion to the reactor for conducting a purge step, and an exhaust line which exhausts a gas from within the reactor to a location outside the reactor. An ALD thin film deposition method is also provided.
摘要翻译：提供了一种原子层沉积（ALD）薄膜沉积装置。原子层沉积（ALD）薄膜沉积设备包括一个反应器，该反应器包括一个载体上至少有一个基底和一个被喷射气体的构件，第一反应气体供应管线与第一反应气体供应部分其允许第一反应气体从第一反应气体供给部流向反应器;第二反应气体供给管，其与第二反应气体供给部相连，允许第二反应气体从第二反应气体供给部与反应器反应，与第一反应气体反应，净化气体供应管线，其与净化气体供应部分相连，并允许净化气体从吹扫气体供应部分流到反应器进行吹扫步骤;以及排气将从反应器内的气体排出到反应器外部的位置。还提供了一种ALD薄膜沉积方法。

6. 发明申请

US20060292810A1 Method of manufacturing a capacitor 审中-公开
标题翻译：制造电容器的方法
公开(公告)号：US20060292810A1
公开(公告)日：2006-12-28
申请号：US11448769
申请日：2006-06-08
申请人： Jung-Hun Seo , Hyun-Young Kim , Young-Wook Park , Jin-Gi Hong , Kun-Sang Park , Jin-Ho Kim , Kyung-Bum Koo
发明人： Jung-Hun Seo , Hyun-Young Kim , Young-Wook Park , Jin-Gi Hong , Kun-Sang Park , Jin-Ho Kim , Kyung-Bum Koo
IPC分类号： H01L21/20
CPC分类号： H01L28/91 , H01L21/28562 , H01L27/10817 , H01L27/10852
摘要： In methods of manufacturing capacitors, a first metal compound may be deposited on a substrate using first and second source gases. The first and the second source gases may be provided onto the substrate by a first flow rate ratio in which a deposition rate of the first metal compound by surface reaction between the source gases is higher than that by mass transfer between the source gases. A second metal compound may be deposited on the first metal compound and undesired materials may be removed by providing the source gases with a second flow rate ratio different from the first flow rate ratio. Depositing the first and the second metal compounds may be repeated to form a lower electrode. A dielectric layer and an upper electrode may be formed on the lower electrode. Accordingly, permeation of an etching liquid or gas may be reduced during an etching process.
摘要翻译：在制造电容器的方法中，可以使用第一和第二源气体在基板上沉积第一金属化合物。可以通过第一流量比将第一和第二源气体提供到基底上，其中通过源气体之间的表面反应使第一金属化合物的沉积速率高于源气体之间的质量传递的沉积速率。可以将第二金属化合物沉积在第一金属化合物上，并且可以通过提供不同于第一流速比的第二流量比来提供源气体来除去不需要的物质。可以重复沉积第一和第二金属化合物以形成下电极。电介质层和上电极可以形成在下电极上。因此，在蚀刻过程中可能会减少蚀刻液体或气体的渗透。

7. 发明授权

US07902090B2 Method of forming a layer on a semiconductor substrate 失效
标题翻译：在半导体衬底上形成层的方法
公开(公告)号：US07902090B2
公开(公告)日：2011-03-08
申请号：US12212466
申请日：2008-09-17
申请人： Jung-Hun Seo , Young-Wook Park , Jin-Gi Hong
发明人： Jung-Hun Seo , Young-Wook Park , Jin-Gi Hong
IPC分类号： H01L21/336
CPC分类号： C23C16/45544 , C23C16/34 , C23C16/45565 , C23C16/45589
摘要： In a method of forming a thin layer for a semiconductor device through an ALD process and a CVD process in the same chamber, a semiconductor substrate is introduced into a processing chamber, and an interval between a showerhead and the substrate is adjusted to a first gap distance. A first layer is formed on the substrate at a first temperature through an ALD process. The interval between the showerhead and the substrate is additionally adjusted to a second gap distance, and a second layer is formed on the first layer at a second temperature through a CVD process. Accordingly, the thin layer has good current characteristics, and the manufacturing throughput of a semiconductor device is improved.
摘要翻译：在通过同一腔室中的ALD工艺和CVD工艺形成用于半导体器件的薄层的方法中，将半导体衬底引入到处理室中，将喷头与衬底之间的间隔调整到第一间隙距离。通过ALD工艺在第一温度下在衬底上形成第一层。喷淋头和基板之间的间隔被额外地调整到第二间隙距离，并且通过CVD工艺在第二温度下在第一层上形成第二层。因此，薄层具有良好的电流特性，提高了半导体器件的制造能力。

8. 发明申请

US20060000411A1 Method of forming a layer on a semiconductor substrate and apparatus for performing the same 失效
标题翻译：在半导体基板上形成层的方法及其制造方法
公开(公告)号：US20060000411A1
公开(公告)日：2006-01-05
申请号：US11154110
申请日：2005-06-15
申请人： Jung-Hun Seo , Young-Wook Park , Jin-Gi Hong
发明人： Jung-Hun Seo , Young-Wook Park , Jin-Gi Hong
IPC分类号： C23C16/00
CPC分类号： C23C16/45544 , C23C16/34 , C23C16/45565 , C23C16/45589
摘要： In a method of forming a thin layer for a semiconductor device through an ALD process and a CVD process in the same chamber, a semiconductor substrate is introduced into a processing chamber, and an interval between a showerhead and the substrate is adjusted to a first gap distance. A first layer is formed on the substrate at a first temperature through an ALD process. The interval between the showerhead and the substrate is additionally adjusted to a second gap distance, and a second layer is formed on the first layer at a second temperature through a CVD process. Accordingly, the thin layer has good current characteristics, and the manufacturing throughput of a semiconductor device is improved.
摘要翻译：在通过同一腔室中的ALD工艺和CVD工艺形成用于半导体器件的薄层的方法中，将半导体衬底引入到处理室中，将喷头与衬底之间的间隔调整到第一间隙距离。通过ALD工艺在第一温度下在衬底上形成第一层。喷淋头和基板之间的间隔被额外地调整到第二间隙距离，并且通过CVD工艺在第二温度下在第一层上形成第二层。因此，薄层具有良好的电流特性，提高了半导体器件的制造能力。

9. 发明申请

US20060024964A1 Method and apparatus of forming thin film using atomic layer deposition 审中-公开
标题翻译：使用原子层沉积法形成薄膜的方法和装置
公开(公告)号：US20060024964A1
公开(公告)日：2006-02-02
申请号：US11154045
申请日：2005-06-15
申请人： Jung-Hun Seo , Young-Wook Park , Jin-Gi Hong
发明人： Jung-Hun Seo , Young-Wook Park , Jin-Gi Hong
IPC分类号： H01L21/44 , C23C16/00
CPC分类号： H01L21/28562 , C23C16/34 , C23C16/452 , C23C16/45544
摘要： The method of forming a TiN thin film using an atomic layer deposition (ALD) method includes thermally decomposing TiCl4; introducing a pyrolyzed product of the TiCl4 into the chamber; supplying a first purge gas into the chamber; supplying a reactant gas into the chamber, thereby forming a TiN thin film; and supplying a second purge gas into the chamber. The apparatus of forming a TiN thin film includes a gas conduit having an entrance line into which a source gas, TiCl4 is introduced; a heater installed around the gas conduit and thermally decomposing the introduced source gas, TiCl4, in advance to make a secondary source gas; and a chamber being connected to the gas conduit and having a reaction room in which the TiN thin film is formed by the reaction of the secondary source gas and NH3 as a reactant gas. Therefore, a TiN thin film growth rate can be improved.
摘要翻译：使用原子层沉积（ALD）法形成TiN薄膜的方法包括：热分解TiCl 4; 将TiCl 4的热解产物引入室中; 将第一吹扫气体供应到所述室中; 将反应气体供应到室中，由此形成TiN薄膜; 以及将第二吹扫气体供应到所述室中。形成TiN薄膜的装置包括具有入口管的气体导管，引入源气体TiCl 4; 安装在气体管道周围的加热器，并预先将引入的源气体TiCl 4分解，以形成二次源气体; 以及与气体导管连接的室，具有反应室，在该反应室中，作为反应气体的二次气体和NH 3 3反应形成TiN薄膜。因此，可以提高TiN薄膜的生长速度。

10. 发明申请

US20060021578A1 Chemical vapor deposition apparatus 审中-公开
标题翻译：化学气相沉积装置
公开(公告)号：US20060021578A1
公开(公告)日：2006-02-02
申请号：US11155206
申请日：2005-06-16
申请人： Jung-Hun Seo , Young-Wook Park , Jin-Gi Hong
发明人： Jung-Hun Seo , Young-Wook Park , Jin-Gi Hong
IPC分类号： C23C16/00
CPC分类号： C23C16/4401 , H01L21/67109 , H01L21/67748
摘要： A chemical vapor deposition apparatus and method are provided. The apparatus includes a heater disposed on a bottom of a process chamber for heating a wafer laid on the heater. A shower head is disposed above the heater for injecting a reaction gas. The apparatus comprises a shutter chamber provided at an outer side of the process chamber. A transfer robot is installed in the shutter chamber having a blade at a front end thereof. The transfer robot is reciprocated within the process chamber by driving device. A shutter disk is laid on the blade of the transfer robot. The shutter disk is located on the heater of the process chamber by the transfer robot to prevent radiant heat generated from the heater from being transferred to the shower head.
摘要翻译：提供了一种化学气相沉积设备和方法。该设备包括设置在处理室底部的加热器的加热器的加热器。淋浴头设置在加热器上方，用于注入反应气体。该装置包括设置在处理室外侧的活门室。传送机器人安装在具有在其前端的叶片的快门室中。传送机器人通过驱动装置在处理室内往复运动。快门盘放置在传送机器人的刀片上。快门盘通过传送机器人位于处理室的加热器上，以防止加热器产生的辐射热被传送到淋浴喷头。

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