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1. 发明授权

US08846518B2 Multilayer construction 有权
标题翻译：多层建筑
公开(公告)号：US08846518B2
公开(公告)日：2014-09-30
申请号：US13805825
申请日：2011-06-01
申请人： Jun-Ying Zhang , Michael A. Haase , Todd A. Ballen , Terry L. Smith
发明人： Jun-Ying Zhang , Michael A. Haase , Todd A. Ballen , Terry L. Smith
IPC分类号： H01L21/3205 , H01L21/311 , C23C16/34 , H01L21/306 , H01L33/46 , C23C16/02 , B82Y20/00 , C23C14/02 , H01L21/46 , C23C14/06 , H01S5/347 , G02B6/44 , H01S5/183 , H01L33/28
CPC分类号： H01L33/06 , B82Y20/00 , C23C14/021 , C23C14/0652 , C23C16/0227 , C23C16/345 , G02B6/4439 , H01L21/30604 , H01L21/46 , H01L33/28 , H01L33/46 , H01S5/18369 , H01S5/347
摘要： A multilayer construction is disclosed. The multilayer construction includes a -II-VI semiconductor layer (110)x and a Si3N4 layer (120) disposed directly on the II-VI semiconductor layer. To improve the adhesion of the Si3N4 layer (120) a native oxide on the II-VI semiconductor layer is removed.
摘要翻译：公开了一种多层结构。多层结构包括直接设置在II-VI半导体层上的-II-VI半导体层（110）x和Si3N4层（120）。为了改善Si 3 N 4层（120）的附着力，去除了II-VI半导体层上的自然氧化物。

2. 发明申请

US20130109183A1 Multilayer Construction 有权
标题翻译：多层建筑
公开(公告)号：US20130109183A1
公开(公告)日：2013-05-02
申请号：US13805825
申请日：2011-06-01
申请人： Jun-Ying Zhang , Michael A. Haase , Todd A. Ballen , Terry L. Smith
发明人： Jun-Ying Zhang , Michael A. Haase , Todd A. Ballen , Terry L. Smith
IPC分类号： H01L21/306
CPC分类号： H01L33/06 , B82Y20/00 , C23C14/021 , C23C14/0652 , C23C16/0227 , C23C16/345 , G02B6/4439 , H01L21/30604 , H01L21/46 , H01L33/28 , H01L33/46 , H01S5/18369 , H01S5/347
摘要： A multilayer construction is disclosed. The multilayer construction includes a -II-VI semiconductor layer (110)x and a Si3N4 layer (120) disposed directly on the II-VI semiconductor layer. To improve the adhesion of the Si3N4 layer (120) a native oxide on the II-VI semiconductor layer is removed.
摘要翻译：公开了一种多层结构。多层结构包括直接设置在II-VI半导体层上的-II-VI半导体层（110）x和Si3N4层（120）。为了改善Si 3 N 4层（120）的附着力，去除了II-VI半导体层上的自然氧化物。

3. 发明授权

US09293622B2 Re-emitting semiconductor carrier devices for use with LEDs and methods of manufacture 有权
标题翻译：重新发射与LED一起使用的半导体载体装置和制造方法
公开(公告)号：US09293622B2
公开(公告)日：2016-03-22
申请号：US13264487
申请日：2010-05-03
申请人： Terry L. Smith , Catherine A. Leatherdale , Michael A. Haase , Thomas J. Miller , Xiaoguang Sun , Zhaohui Yang , Todd A. Ballen , Amy S. Barnes
发明人： Terry L. Smith , Catherine A. Leatherdale , Michael A. Haase , Thomas J. Miller , Xiaoguang Sun , Zhaohui Yang , Todd A. Ballen , Amy S. Barnes
IPC分类号： H01L31/055 , H05B33/10 , H01L33/00 , H01L33/50
CPC分类号： H01L31/055 , H01L33/0079 , H01L33/502 , H01L2224/48463 , H01L2933/0041 , H05B33/10 , Y02E10/52
摘要： Re-emitting semiconductor constructions (RSCs) for use with LEDs, and related devices, systems, and methods are disclosed. A method of fabrication includes providing a semiconductor substrate, forming on a first side of the substrate a semiconductor layer stack, attaching a carrier window to the stack, and removing the substrate after the attaching step. The stack includes an active region adapted to convert light at a first wavelength λ1 to visible light at a second wavelength λ2, the active region including at least a first potential well. The attaching step is carried out such that the stack is disposed between the substrate and the carrier window, which is transparent to the second wavelength λ2. The carrier window may also have a lateral dimension greater than that of the stack. The removal step is carried out so as to provide an RSC carrier device that includes the carrier window and the stack.
摘要翻译：公开了与LED一起使用的重新发射半导体结构（RSCs）以及相关的器件，系统和方法。一种制造方法包括提供半导体衬底，在衬底的第一侧上形成半导体层堆叠，将载体窗口附接到堆叠，以及在附接步骤之后移除衬底。所述堆叠包括适于将第一波长λ1的光转换成第二波长λ2的可见光的有源区，所述有源区至少包括第一势阱。执行安装步骤使得堆叠被布置在对第二波长λ2透明的基板和载体窗口之间。载体窗口也可以具有大于堆叠的横向尺寸的横向尺寸。执行去除步骤以提供包括载体窗口和堆叠的RSC载体装置。

4. 发明申请

US20120097983A1 RE-EMITTING SEMICONDUCTOR CARRIER DEVICES FOR USE WITH LEDS AND METHODS OF MANUFACTURE 有权
标题翻译：重新发射用于LED的半导体载体装置及其制造方法
公开(公告)号：US20120097983A1
公开(公告)日：2012-04-26
申请号：US13264487
申请日：2010-05-03
申请人： Terry L. Smith , Catherine A. Leatherdale , Michael A. Haase , Thomas J. Miller , Xiaoguang Sun , Zhaohui Yang , Todd A. Ballen , Amy S. Barnes
发明人： Terry L. Smith , Catherine A. Leatherdale , Michael A. Haase , Thomas J. Miller , Xiaoguang Sun , Zhaohui Yang , Todd A. Ballen , Amy S. Barnes
IPC分类号： H01L33/60 , H01L33/48
CPC分类号： H01L31/055 , H01L33/0079 , H01L33/502 , H01L2224/48463 , H01L2933/0041 , H05B33/10 , Y02E10/52
摘要： Re-emitting semiconductor constructions (RSCs) for use with LEDs, and related devices, systems, and methods are disclosed. A method of fabrication includes providing a semiconductor substrate, forming on a first side of the substrate a semiconductor layer stack, attaching a carrier window to the stack, and removing the substrate after the attaching step. The stack includes an active region adapted to convert light at a first wavelength λ1 to visible light at a second wavelength λ2, the active region including at least a first potential well. The attaching step is carried out such that the stack is disposed between the substrate and the carrier window, which is transparent to the second wavelength λ2. The carrier window may also have a lateral dimension greater than that of the stack. The removal step is carried out so as to provide an RSC carrier device that includes the carrier window and the stack.
摘要翻译：公开了与LED一起使用的重新发射半导体结构（RSCs）以及相关的器件，系统和方法。一种制造方法包括提供半导体衬底，在衬底的第一侧上形成半导体层堆叠，将载体窗口附接到堆叠，以及在附接步骤之后移除衬底。所述堆叠包括适于将第一波长λ1的光转换成第二波长λ2的可见光的有源区，所述有源区至少包括第一势阱。执行安装步骤使得堆叠被布置在对第二波长λ2透明的基板和载体窗口之间。载体窗口也可以具有大于堆叠的横向尺寸的横向尺寸。执行去除步骤以提供包括载体窗口和堆叠的RSC载体装置。

5. 发明申请

US20110117686A1 METHOD OF FABRICATING LIGHT EXTRACTOR 有权
标题翻译：制造光提取物的方法
公开(公告)号：US20110117686A1
公开(公告)日：2011-05-19
申请号：US13000604
申请日：2009-06-03
申请人： Jun-Ying Zhang , Michael A. Haase , Terry L. Smith
发明人： Jun-Ying Zhang , Michael A. Haase , Terry L. Smith
IPC分类号： H01L33/44
CPC分类号： H01L33/44 , H01L33/08 , H01L33/502 , H01L2933/0091
摘要： Methods of fabricating light extractors are disclosed. The method of fabricating an optical construction for extracting light from a substrate includes the steps of: (a) providing a substrate that has a surface; (b) disposing a plurality of structures on the surface of the substrate, where the plurality of structures form open areas that expose the surface of the substrate; (c) shrinking at least some of the structures; and (d) applying an overcoat to cover the shrunk structures and the surface of the substrate in the open areas.
摘要翻译：公开了提取光的方法。制造用于从衬底提取光的光学结构的方法包括以下步骤：（a）提供具有表面的衬底; （b）在所述基板的表面上设置多个结构，其中所述多个结构形成暴露所述基板的表面的敞开区域; （c）收缩至少一些结构物; 和（d）施加外涂层以覆盖开放区域中的收缩结构和基底表面。

6. 发明授权

US08765611B2 Etching process for semiconductors 失效
标题翻译：半导体蚀刻工艺
公开(公告)号：US08765611B2
公开(公告)日：2014-07-01
申请号：US12917826
申请日：2010-11-02
申请人： Michael A. Haase , Terry L. Smith , Jun-Ying Zhang
发明人： Michael A. Haase , Terry L. Smith , Jun-Ying Zhang
IPC分类号： H01L21/027
CPC分类号： H01L31/02363 , H01L21/465 , H01L33/0095 , H01L33/22 , H01L2933/0083 , Y02E10/50
摘要： A process for etching semiconductors, such as II-VI or III-V semiconductors is provided. The method includes sputter etching the semiconductor through an etching mask using a nonreactive gas, removing the semiconductor and cleaning the chamber with a reactive gas. The etching mask includes a photoresist. Using this method, light-emitting diodes with light extracting elements or nano/micro-structures etched into the semiconductor material can be fabricated.
摘要翻译：提供了蚀刻半导体的方法，例如II-VI或III-V半导体。该方法包括通过使用非反应性气体的蚀刻掩模溅射半导体蚀刻，去除半导体并用反应气体清洁室。蚀刻掩模包括光致抗蚀剂。使用这种方法，可以制造具有光提取元件的发光二极管或蚀刻到半导体材料中的纳米/微结构。

7. 发明申请

US20110101402A1 SEMICONDUCTOR LIGHT CONVERTING CONSTRUCTION 审中-公开
标题翻译：半导体光转换结构
公开(公告)号：US20110101402A1
公开(公告)日：2011-05-05
申请号：US13000592
申请日：2009-06-10
申请人： Jun-Ying Zhang , Terry L. Smith , Michael A. Haase
发明人： Jun-Ying Zhang , Terry L. Smith , Michael A. Haase
IPC分类号： H01L33/00
CPC分类号： H01L33/50 , H01L33/08 , H01L33/44 , H01L2933/0091
摘要： Semiconductor light converting constructions are disclosed. The semiconductor light converting construction includes a semiconductor potential well for converting at least a portion of light at a first wavelength to light at a longer second wavelength; an outer layer that is disposed on the semiconductor potential well and has a first index of refraction; and a structured layer that is disposed on the outer layer and has a second index of refraction that is smaller than the first index of refraction. The structured layer includes a plurality of structures that are disposed directly on the outer layer and a plurality of openings that expose the outer layer. The semiconductor light converting construction further includes a structured overcoat that is disposed directly on at least a portion of the structured layer and a portion of the outer layer in the plurality of openings. The overcoat has a third index of refraction that is greater than the second index of refraction.
摘要翻译：公开了半导体光转换结构。半导体光转换结构包括用于将第一波长的至少一部分光转换成较长第二波长的光的半导体势阱; 外层，其设置在所述半导体势阱上并具有第一折射率; 以及设置在外层上并且具有小于第一折射率的第二折射率的结构化层。结构化层包括直接设置在外层上的多个结构和暴露外层的多个开口。半导体光转换结构还包括直接设置在结构化层的至少一部分上的多个开口中的外层的一部分的结构化外涂层。外涂层具有大于第二折射率的第三折射率。

8. 发明申请

US20110101382A1 LIGHT CONVERTING CONSTRUCTION 有权
标题翻译：光转换结构
公开(公告)号：US20110101382A1
公开(公告)日：2011-05-05
申请号：US13000608
申请日：2009-06-03
申请人： Terry L. Smith , Michael A. Haase , Jun-Ying Zhang
发明人： Terry L. Smith , Michael A. Haase , Jun-Ying Zhang
IPC分类号： H01L31/173 , H01L31/0232
CPC分类号： H01L33/44 , H01L33/08 , H01L33/502 , H01L2924/0002 , H01L2933/0091 , H01L2924/00
摘要： Light converting constructions are disclosed. The light converting construction includes a phosphor slab that has a first index of refraction for converting at least a portion of light at a first wavelength to light at a longer second wavelength; and a structured layer that is disposed on the phosphor slab and has a second index of refraction that is smaller than the first index of refraction. The structured layer includes a plurality of structures that are disposed directly on the phosphor slab and a plurality of openings that expose the phosphor slab. The light converting construction further includes a structured overcoat that is disposed directly on at least a portion of the structured layer and a portion of the phosphor slab in the plurality of openings. The structured overcoat has a third index of refraction that is greater than the second index of refraction.
摘要翻译：公开了光转换结构。光转换结构包括：具有第一折射率的荧光体板，用于将第一波长的至少一部分光转换成较长的第二波长的光; 以及设置在所述荧光体板上并且具有小于所述第一折射率的第二折射率的结构化层。结构化层包括直接设置在荧光体板上的多个结构以及暴露荧光体板的多个开口。光转换结构还包括直接设置在结构化层的至少一部分上的结构化外涂层和多个开口中的荧光体板的一部分。结构化外涂层具有大于第二折射率的第三折射率。

9. 发明授权

US07532790B2 Method of coupling light into microresonators 失效
标题翻译：将光耦合到微谐振器的方法
公开(公告)号：US07532790B2
公开(公告)日：2009-05-12
申请号：US11277770
申请日：2006-03-29
申请人： Terry L. Smith , Barry J. Koch , Michael A. Haase , Jun-Ying Zhang , Robert W. Wilson , Xudong Fan
发明人： Terry L. Smith , Barry J. Koch , Michael A. Haase , Jun-Ying Zhang , Robert W. Wilson , Xudong Fan
IPC分类号： G02B6/42 , G02B6/12 , G02B6/10 , G02B6/00
CPC分类号： G02B6/122 , G02B6/12007 , G02B6/30 , G02B6/4204
摘要： A method of making a microresonator device includes the steps of providing at least a first substrate and providing a waveguide integrated on the substrate. The waveguide includes a core and a metal cladding layer on at least part of one boundary of the core. Another step is positioning a microresonator so that it is in an optically coupling relationship with the waveguide.
摘要翻译：制造微谐振器器件的方法包括提供至少第一衬底并提供集成在衬底上的波导的步骤。波导包括在芯的一个边界的至少一部分上的芯和金属覆层。另一步是定位微谐振器，使其与波导处于光学耦合关系。

10. 发明授权

US07389025B2 Coupling light into microresonators 有权
标题翻译：将光耦合到微谐振器中
公开(公告)号：US07389025B2
公开(公告)日：2008-06-17
申请号：US11277769
申请日：2006-03-29
申请人： Terry L. Smith , Barry J. Koch , Michael A. Haase , Jun-Ying Zhang , Robert W. Wilson , Xudong Fan
发明人： Terry L. Smith , Barry J. Koch , Michael A. Haase , Jun-Ying Zhang , Robert W. Wilson , Xudong Fan
IPC分类号： G02B6/26
CPC分类号： G02B6/34 , B82Y20/00 , G01N21/648 , G01N21/7746 , G01N2021/6439 , G02B6/1226 , G02B6/29341
摘要： An optical microresonator device is described including an optical waveguide and an optical microresonator positioned so as to optically couple to the waveguide. The waveguide includes a core and a metal cladding layer on at least part of one boundary of the core.
摘要翻译：描述了一种光学微谐振器装置，其包括光波导和光学微谐振器，其被定位成光耦合到波导。波导包括在芯的一个边界的至少一部分上的芯和金属覆层。

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