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1. 发明授权

US07532790B2 Method of coupling light into microresonators 失效
标题翻译：将光耦合到微谐振器的方法
公开(公告)号：US07532790B2
公开(公告)日：2009-05-12
申请号：US11277770
申请日：2006-03-29
申请人： Terry L. Smith , Barry J. Koch , Michael A. Haase , Jun-Ying Zhang , Robert W. Wilson , Xudong Fan
发明人： Terry L. Smith , Barry J. Koch , Michael A. Haase , Jun-Ying Zhang , Robert W. Wilson , Xudong Fan
IPC分类号： G02B6/42 , G02B6/12 , G02B6/10 , G02B6/00
CPC分类号： G02B6/122 , G02B6/12007 , G02B6/30 , G02B6/4204
摘要： A method of making a microresonator device includes the steps of providing at least a first substrate and providing a waveguide integrated on the substrate. The waveguide includes a core and a metal cladding layer on at least part of one boundary of the core. Another step is positioning a microresonator so that it is in an optically coupling relationship with the waveguide.
摘要翻译：制造微谐振器器件的方法包括提供至少第一衬底并提供集成在衬底上的波导的步骤。波导包括在芯的一个边界的至少一部分上的芯和金属覆层。另一步是定位微谐振器，使其与波导处于光学耦合关系。

2. 发明授权

US07389025B2 Coupling light into microresonators 有权
标题翻译：将光耦合到微谐振器中
公开(公告)号：US07389025B2
公开(公告)日：2008-06-17
申请号：US11277769
申请日：2006-03-29
申请人： Terry L. Smith , Barry J. Koch , Michael A. Haase , Jun-Ying Zhang , Robert W. Wilson , Xudong Fan
发明人： Terry L. Smith , Barry J. Koch , Michael A. Haase , Jun-Ying Zhang , Robert W. Wilson , Xudong Fan
IPC分类号： G02B6/26
CPC分类号： G02B6/34 , B82Y20/00 , G01N21/648 , G01N21/7746 , G01N2021/6439 , G02B6/1226 , G02B6/29341
摘要： An optical microresonator device is described including an optical waveguide and an optical microresonator positioned so as to optically couple to the waveguide. The waveguide includes a core and a metal cladding layer on at least part of one boundary of the core.
摘要翻译：描述了一种光学微谐振器装置，其包括光波导和光学微谐振器，其被定位成光耦合到波导。波导包括在芯的一个边界的至少一部分上的芯和金属覆层。

3. 发明申请

US20120012739A1 OPTICAL MICRORESONATOR SYSTEM 审中-公开
标题翻译：光学微型放大器系统
公开(公告)号：US20120012739A1
公开(公告)日：2012-01-19
申请号：US13142019
申请日：2009-12-17
申请人： Barry J. Koch , Terry L. Smith , Jun-Ying Zhang , Yasha Yi
发明人： Barry J. Koch , Terry L. Smith , Jun-Ying Zhang , Yasha Yi
IPC分类号： G01J1/04
CPC分类号： G01N21/77 , G01N2021/7789 , G02B6/12007 , G02B6/29341
摘要： An optical device includes a light source (102), an optical microresonator (118) that supports at least a first optical guided mode (128) propagating along a first direction and at least a second optical guided mode (164) propagating along a second direction different from the first direction, and a detector (110,114). At least the first optical guided mode is excited by the emitted broadband light without the second optical guided mode being excited by the emitted broadband light. In some embodiments The detector receives and wavelength-averages light from the at least a second optical guided mode of the optical microresonator. In some embodiments, at least one of the light source, the microresonator and the detector is tunable.
摘要翻译：光学装置包括光源（102），光学微谐振器（118），其支撑沿着第一方向传播的至少第一光学引导模式（128）和沿着第二方向传播的至少第二光学引导模式（164）与第一方向不同，以及检测器（110,114）。至少第一光导模式被发射的宽带光激励，而第二光导模式不被发射的宽带光激励。在一些实施例中，检测器接收并波长平均来自光学微谐振器的至少第二光学引导模式的光。在一些实施例中，光源，微谐振器和检测器中的至少一个是可调谐的。

4. 发明授权

US08538223B2 Method for making optical waveguides 失效
标题翻译：制造光波导的方法
公开(公告)号：US08538223B2
公开(公告)日：2013-09-17
申请号：US12744589
申请日：2008-11-21
申请人： Jun-Ying Zhang , Terry L. Smith , Barry J. Koch , Yasha Yi
发明人： Jun-Ying Zhang , Terry L. Smith , Barry J. Koch , Yasha Yi
IPC分类号： G02B6/10 , G02B6/26
CPC分类号： G02B6/132 , B82Y20/00 , G02B6/1223 , G02B2006/12061 , G02B2006/12097
摘要： A method for making a waveguide comprises (a) providing a waveguide structure comprising a substrate (22), a lower cladding (20) layer on the substrate, and a core layer (24) comprising silicon nitride, amorphous silicon, or amorphous silicon-germanium alloy on the lower cladding layer; (b) patterning the core layer; and (c) annealing (28) the waveguide structure.
摘要翻译：一种制造波导的方法包括（a）提供包括衬底（22），衬底上的下包层（20）层和包括氮化硅，非晶硅或非晶硅层的芯层（24）的波导结构，锗合金在下包层上; （b）图案化芯层; 和（c）退火（28）波导结构。

5. 发明申请

US20100260462A1 Method for Making Optical Waveguides 失效
标题翻译：制造光波导的方法
公开(公告)号：US20100260462A1
公开(公告)日：2010-10-14
申请号：US12744589
申请日：2008-11-21
申请人： Jun-Ying Zhang , Terry L. Smith , Barry J. Koch , Yasha Yi
发明人： Jun-Ying Zhang , Terry L. Smith , Barry J. Koch , Yasha Yi
IPC分类号： G02B6/132 , G02B6/02 , B05D5/06
CPC分类号： G02B6/132 , B82Y20/00 , G02B6/1223 , G02B2006/12061 , G02B2006/12097
摘要： A method for making a waveguide comprises (a) providing a waveguide structure comprising a substrate (22), a lower cladding (20) layer on the substrate, and a core layer (24) comprising silicon nitride, amorphous silicon, or amorphous silicon-germanium alloy on the lower cladding layer; (b) patterning the core layer; and (c) annealing (28) the waveguide structure.
摘要翻译：一种制造波导的方法包括（a）提供包括衬底（22），衬底上的下包层（20）层和包括氮化硅，非晶硅或非晶硅层的芯层（24）的波导结构，锗合金在下包层上; （b）图案化芯层; 和（c）退火（28）波导结构。

6. 发明授权

US06946238B2 Process for fabrication of optical waveguides 有权
标题翻译：光波导制造工艺
公开(公告)号：US06946238B2
公开(公告)日：2005-09-20
申请号：US10328766
申请日：2002-12-24
申请人： Jun-Ying Zhang , Brian J. Gates , Jeremy K. Larsen , Barry J. Koch , Terry L. Smith
发明人： Jun-Ying Zhang , Brian J. Gates , Jeremy K. Larsen , Barry J. Koch , Terry L. Smith
IPC分类号： G02B6/122 , G02B6/132 , G02B6/136 , G02B6/138 , G02F1/01 , H01S3/063 , H01S3/0941 , H01S3/16 , H01S3/17 , H01S5/026 , H01S5/10 , H01S5/14 , H01S5/20 , H01S5/327 , H01S5/343 , H01S5/50 , G03C5/00
CPC分类号： H01S5/026 , G02B6/132 , G02B6/136 , G02B6/138 , G02F1/011 , H01S3/0632 , H01S3/09415 , H01S3/1603 , H01S3/17 , H01S5/10 , H01S5/1014 , H01S5/1064 , H01S5/14 , H01S5/327
摘要： A method for manufacturing an optical waveguide device in accordance with the present invention includes the steps of depositing a lower cladding layer; coating a photoresist layer directly on the lower cladding layer; patterning the photoresist layer to create channels; depositing a core layer, wherein a first portion of the core layer is deposited inside the channels and a second portion overlays the patterned photoresist layer; removing the patterned photoresist layer and the second portions of the core layer overlaying the patterned photoresist layer; and depositing an upper cladding layer.
摘要翻译：根据本发明的光波导器件的制造方法包括以下步骤：沉积下包层; 在下包层上直接涂布光致抗蚀剂层; 图案化光致抗蚀剂层以产生通道; 沉积核心层，其中芯层的第一部分沉积在沟道内部，第二部分覆盖图案化的光致抗蚀剂层; 去除图案化的光致抗蚀剂层和覆盖图案化的光致抗蚀剂层的芯层的第二部分; 并沉积上覆层。

7. 发明申请

US20110117686A1 METHOD OF FABRICATING LIGHT EXTRACTOR 有权
标题翻译：制造光提取物的方法
公开(公告)号：US20110117686A1
公开(公告)日：2011-05-19
申请号：US13000604
申请日：2009-06-03
申请人： Jun-Ying Zhang , Michael A. Haase , Terry L. Smith
发明人： Jun-Ying Zhang , Michael A. Haase , Terry L. Smith
IPC分类号： H01L33/44
CPC分类号： H01L33/44 , H01L33/08 , H01L33/502 , H01L2933/0091
摘要： Methods of fabricating light extractors are disclosed. The method of fabricating an optical construction for extracting light from a substrate includes the steps of: (a) providing a substrate that has a surface; (b) disposing a plurality of structures on the surface of the substrate, where the plurality of structures form open areas that expose the surface of the substrate; (c) shrinking at least some of the structures; and (d) applying an overcoat to cover the shrunk structures and the surface of the substrate in the open areas.
摘要翻译：公开了提取光的方法。制造用于从衬底提取光的光学结构的方法包括以下步骤：（a）提供具有表面的衬底; （b）在所述基板的表面上设置多个结构，其中所述多个结构形成暴露所述基板的表面的敞开区域; （c）收缩至少一些结构物; 和（d）施加外涂层以覆盖开放区域中的收缩结构和基底表面。

8. 发明申请

US20110101382A1 LIGHT CONVERTING CONSTRUCTION 有权
标题翻译：光转换结构
公开(公告)号：US20110101382A1
公开(公告)日：2011-05-05
申请号：US13000608
申请日：2009-06-03
申请人： Terry L. Smith , Michael A. Haase , Jun-Ying Zhang
发明人： Terry L. Smith , Michael A. Haase , Jun-Ying Zhang
IPC分类号： H01L31/173 , H01L31/0232
CPC分类号： H01L33/44 , H01L33/08 , H01L33/502 , H01L2924/0002 , H01L2933/0091 , H01L2924/00
摘要： Light converting constructions are disclosed. The light converting construction includes a phosphor slab that has a first index of refraction for converting at least a portion of light at a first wavelength to light at a longer second wavelength; and a structured layer that is disposed on the phosphor slab and has a second index of refraction that is smaller than the first index of refraction. The structured layer includes a plurality of structures that are disposed directly on the phosphor slab and a plurality of openings that expose the phosphor slab. The light converting construction further includes a structured overcoat that is disposed directly on at least a portion of the structured layer and a portion of the phosphor slab in the plurality of openings. The structured overcoat has a third index of refraction that is greater than the second index of refraction.
摘要翻译：公开了光转换结构。光转换结构包括：具有第一折射率的荧光体板，用于将第一波长的至少一部分光转换成较长的第二波长的光; 以及设置在所述荧光体板上并且具有小于所述第一折射率的第二折射率的结构化层。结构化层包括直接设置在荧光体板上的多个结构以及暴露荧光体板的多个开口。光转换结构还包括直接设置在结构化层的至少一部分上的结构化外涂层和多个开口中的荧光体板的一部分。结构化外涂层具有大于第二折射率的第三折射率。

9. 发明授权

US08846518B2 Multilayer construction 有权
标题翻译：多层建筑
公开(公告)号：US08846518B2
公开(公告)日：2014-09-30
申请号：US13805825
申请日：2011-06-01
申请人： Jun-Ying Zhang , Michael A. Haase , Todd A. Ballen , Terry L. Smith
发明人： Jun-Ying Zhang , Michael A. Haase , Todd A. Ballen , Terry L. Smith
IPC分类号： H01L21/3205 , H01L21/311 , C23C16/34 , H01L21/306 , H01L33/46 , C23C16/02 , B82Y20/00 , C23C14/02 , H01L21/46 , C23C14/06 , H01S5/347 , G02B6/44 , H01S5/183 , H01L33/28
CPC分类号： H01L33/06 , B82Y20/00 , C23C14/021 , C23C14/0652 , C23C16/0227 , C23C16/345 , G02B6/4439 , H01L21/30604 , H01L21/46 , H01L33/28 , H01L33/46 , H01S5/18369 , H01S5/347
摘要： A multilayer construction is disclosed. The multilayer construction includes a -II-VI semiconductor layer (110)x and a Si3N4 layer (120) disposed directly on the II-VI semiconductor layer. To improve the adhesion of the Si3N4 layer (120) a native oxide on the II-VI semiconductor layer is removed.
摘要翻译：公开了一种多层结构。多层结构包括直接设置在II-VI半导体层上的-II-VI半导体层（110）x和Si3N4层（120）。为了改善Si 3 N 4层（120）的附着力，去除了II-VI半导体层上的自然氧化物。

10. 发明授权

US08765611B2 Etching process for semiconductors 失效
标题翻译：半导体蚀刻工艺
公开(公告)号：US08765611B2
公开(公告)日：2014-07-01
申请号：US12917826
申请日：2010-11-02
申请人： Michael A. Haase , Terry L. Smith , Jun-Ying Zhang
发明人： Michael A. Haase , Terry L. Smith , Jun-Ying Zhang
IPC分类号： H01L21/027
CPC分类号： H01L31/02363 , H01L21/465 , H01L33/0095 , H01L33/22 , H01L2933/0083 , Y02E10/50
摘要： A process for etching semiconductors, such as II-VI or III-V semiconductors is provided. The method includes sputter etching the semiconductor through an etching mask using a nonreactive gas, removing the semiconductor and cleaning the chamber with a reactive gas. The etching mask includes a photoresist. Using this method, light-emitting diodes with light extracting elements or nano/micro-structures etched into the semiconductor material can be fabricated.
摘要翻译：提供了蚀刻半导体的方法，例如II-VI或III-V半导体。该方法包括通过使用非反应性气体的蚀刻掩模溅射半导体蚀刻，去除半导体并用反应气体清洁室。蚀刻掩模包括光致抗蚀剂。使用这种方法，可以制造具有光提取元件的发光二极管或蚀刻到半导体材料中的纳米/微结构。

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