专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US09293622B2 Re-emitting semiconductor carrier devices for use with LEDs and methods of manufacture 有权
标题翻译：重新发射与LED一起使用的半导体载体装置和制造方法
公开(公告)号：US09293622B2
公开(公告)日：2016-03-22
申请号：US13264487
申请日：2010-05-03
申请人： Terry L. Smith , Catherine A. Leatherdale , Michael A. Haase , Thomas J. Miller , Xiaoguang Sun , Zhaohui Yang , Todd A. Ballen , Amy S. Barnes
发明人： Terry L. Smith , Catherine A. Leatherdale , Michael A. Haase , Thomas J. Miller , Xiaoguang Sun , Zhaohui Yang , Todd A. Ballen , Amy S. Barnes
IPC分类号： H01L31/055 , H05B33/10 , H01L33/00 , H01L33/50
CPC分类号： H01L31/055 , H01L33/0079 , H01L33/502 , H01L2224/48463 , H01L2933/0041 , H05B33/10 , Y02E10/52
摘要： Re-emitting semiconductor constructions (RSCs) for use with LEDs, and related devices, systems, and methods are disclosed. A method of fabrication includes providing a semiconductor substrate, forming on a first side of the substrate a semiconductor layer stack, attaching a carrier window to the stack, and removing the substrate after the attaching step. The stack includes an active region adapted to convert light at a first wavelength λ1 to visible light at a second wavelength λ2, the active region including at least a first potential well. The attaching step is carried out such that the stack is disposed between the substrate and the carrier window, which is transparent to the second wavelength λ2. The carrier window may also have a lateral dimension greater than that of the stack. The removal step is carried out so as to provide an RSC carrier device that includes the carrier window and the stack.
摘要翻译：公开了与LED一起使用的重新发射半导体结构（RSCs）以及相关的器件，系统和方法。一种制造方法包括提供半导体衬底，在衬底的第一侧上形成半导体层堆叠，将载体窗口附接到堆叠，以及在附接步骤之后移除衬底。所述堆叠包括适于将第一波长λ1的光转换成第二波长λ2的可见光的有源区，所述有源区至少包括第一势阱。执行安装步骤使得堆叠被布置在对第二波长λ2透明的基板和载体窗口之间。载体窗口也可以具有大于堆叠的横向尺寸的横向尺寸。执行去除步骤以提供包括载体窗口和堆叠的RSC载体装置。

2. 发明申请

US20120097983A1 RE-EMITTING SEMICONDUCTOR CARRIER DEVICES FOR USE WITH LEDS AND METHODS OF MANUFACTURE 有权
标题翻译：重新发射用于LED的半导体载体装置及其制造方法
公开(公告)号：US20120097983A1
公开(公告)日：2012-04-26
申请号：US13264487
申请日：2010-05-03
申请人： Terry L. Smith , Catherine A. Leatherdale , Michael A. Haase , Thomas J. Miller , Xiaoguang Sun , Zhaohui Yang , Todd A. Ballen , Amy S. Barnes
发明人： Terry L. Smith , Catherine A. Leatherdale , Michael A. Haase , Thomas J. Miller , Xiaoguang Sun , Zhaohui Yang , Todd A. Ballen , Amy S. Barnes
IPC分类号： H01L33/60 , H01L33/48
CPC分类号： H01L31/055 , H01L33/0079 , H01L33/502 , H01L2224/48463 , H01L2933/0041 , H05B33/10 , Y02E10/52
摘要： Re-emitting semiconductor constructions (RSCs) for use with LEDs, and related devices, systems, and methods are disclosed. A method of fabrication includes providing a semiconductor substrate, forming on a first side of the substrate a semiconductor layer stack, attaching a carrier window to the stack, and removing the substrate after the attaching step. The stack includes an active region adapted to convert light at a first wavelength λ1 to visible light at a second wavelength λ2, the active region including at least a first potential well. The attaching step is carried out such that the stack is disposed between the substrate and the carrier window, which is transparent to the second wavelength λ2. The carrier window may also have a lateral dimension greater than that of the stack. The removal step is carried out so as to provide an RSC carrier device that includes the carrier window and the stack.
摘要翻译：公开了与LED一起使用的重新发射半导体结构（RSCs）以及相关的器件，系统和方法。一种制造方法包括提供半导体衬底，在衬底的第一侧上形成半导体层堆叠，将载体窗口附接到堆叠，以及在附接步骤之后移除衬底。所述堆叠包括适于将第一波长λ1的光转换成第二波长λ2的可见光的有源区，所述有源区至少包括第一势阱。执行安装步骤使得堆叠被布置在对第二波长λ2透明的基板和载体窗口之间。载体窗口也可以具有大于堆叠的横向尺寸的横向尺寸。执行去除步骤以提供包括载体窗口和堆叠的RSC载体装置。

3. 发明授权

US08338838B2 Down-converted light source with uniform wavelength emission 有权
标题翻译：具有均匀波长发射的下变频光源
公开(公告)号：US08338838B2
公开(公告)日：2012-12-25
申请号：US12810052
申请日：2008-12-09
申请人： Xiaoguang Sun , Michael A. Haase , Thomas J. Miller , Terry L. Smith , Tommie W. Kelley , Catherine A. Leatherdale
发明人： Xiaoguang Sun , Michael A. Haase , Thomas J. Miller , Terry L. Smith , Tommie W. Kelley , Catherine A. Leatherdale
IPC分类号： H01L33/00
CPC分类号： H01L27/156 , H01L33/0079 , H01L33/505
摘要： An arrangement of light sources is attached to a semiconductor wavelength converter. Each light source emits light at a respective peak wavelength, and the arrangement of light sources is characterized by a first range of peak wavelengths. The semiconductor wavelength converter is characterized by a second range of peak wavelengths when pumped by the arrangement of light sources. The second range of peak wavelengths is narrower than the first range of peak wavelengths. The semiconductor wavelength converter is characterized by an absorption edge having a wavelength longer than the longest peak wavelength of the light sources. The wavelength converter may also be used for reducing the wavelength variation in the output from an extended light source.
摘要翻译：光源的布置附着到半导体波长转换器。每个光源以相应的峰值波长发光，并且光源的布置的特征在于峰值波长的第一范围。半导体波长转换器的特征在于通过光源的排列泵浦时的第二峰值波长范围。峰值波长的第二范围比峰值波长的第一范围窄。半导体波长转换器的特征在于具有比光源的最长峰值波长长的波长的吸收边。波长转换器还可以用于减小来自扩展光源的输出中的波长变化。

4. 发明申请

US20100295057A1 DOWN-CONVERTED LIGHT SOURCE WITH UNIFORM WAVELENGTH EMISSION 有权
标题翻译：具有均匀波长发射的下变换光源
公开(公告)号：US20100295057A1
公开(公告)日：2010-11-25
申请号：US12810052
申请日：2008-12-09
申请人： Xiaoguang Sun , Michael A. Haase , Thomas J. Miller , Terry L Smith , Tommie W. Kelley , Catherine A. Leatherdale
发明人： Xiaoguang Sun , Michael A. Haase , Thomas J. Miller , Terry L Smith , Tommie W. Kelley , Catherine A. Leatherdale
IPC分类号： H01L33/30 , H01L33/44
CPC分类号： H01L27/156 , H01L33/0079 , H01L33/505
摘要： An arrangement of light sources is attached to a semiconductor wavelength converter. Each light source emits light at a respective peak wavelength, and the arrangement of light sources is characterized by a first range of peak wavelengths. The semiconductor wavelength converter is characterized by a second range of peak wavelengths when pumped by the arrangement of light sources. The second range of peak wavelengths is narrower than the first range of peak wavelengths. The semiconductor wavelength converter is characterized by an absorption edge having a wavelength longer than the longest peak wavelength of the light sources. The wavelength converter may also be used for reducing the wavelength variation in the output from an extended light source.
摘要翻译：光源的布置附着到半导体波长转换器。每个光源以相应的峰值波长发光，并且光源的布置的特征在于峰值波长的第一范围。半导体波长转换器的特征在于通过光源的排列泵浦时的第二峰值波长范围。峰值波长的第二范围比峰值波长的第一范围窄。半导体波长转换器的特征在于具有比光源的最长峰值波长长的波长的吸收边。波长转换器还可以用于减小来自扩展光源的输出中的波长变化。

5. 发明申请

US20110156002A1 LIGHT SOURCE HAVING LIGHT BLOCKING COMPONENTS 审中-公开
标题翻译：具有轻型封闭组件的光源
公开(公告)号：US20110156002A1
公开(公告)日：2011-06-30
申请号：US13060850
申请日：2009-07-28
申请人： Catherine A. Leatherdale , Michael A. Haase , Todd A. Ballen , Thomas J. Miller
发明人： Catherine A. Leatherdale , Michael A. Haase , Todd A. Ballen , Thomas J. Miller
IPC分类号： H01L33/06
CPC分类号： H01L33/08 , H01L33/04 , H01L33/44 , H01L33/50
摘要： Light emitting systems are disclosed. The light emitting system includes an electroluminescent device that emits light at a first wavelength from a top surface of the electroluminescent device. The light emitting system further includes a construction proximate a side of the electroluminescent device for blocking light at the first wavelength that would otherwise exit the side. The light emitting system further includes a re-emitting semiconductor construction that includes a II-VI potential well. The re-emitting semiconductor construction receives the first wavelength light that exits the electroluminescent device and converts at least a portion of the received light to light of a second wavelength. The integrated emission intensity of all light at the second wavelength that exit the light emitting system is at least 4 times the integrated emission intensity of all light at the first wavelength that exit the light emitting system.
摘要翻译：公开了发光系统。发光系统包括从电致发光器件的顶表面发射第一波长的光的电致发光器件。发光系统还包括靠近电致发光器件的侧面的结构，用于阻挡否则将离开侧面的第一波长的光。发光系统还包括包括II-VI势阱的再发射半导体结构。再发射半导体结构接收离开电致发光器件的第一波长光，并将接收的光的至少一部分转换成第二波长的光。离开发光系统的第二波长的所有光的集成发射强度是离开发光系统的第一波长的所有光的集成发射强度的至少4倍。

6. 发明申请

US20120074381A1 RE-EMITTING SEMICONDUCTOR CONSTRUCTION WITH ENHANCED EXTRACTION EFFICIENCY 有权
标题翻译：重新发射半导体结构，具有提高效率
公开(公告)号：US20120074381A1
公开(公告)日：2012-03-29
申请号：US13264924
申请日：2010-04-30
申请人： Zhaohui Yang , Yasha Yi , Catherine A. Leatherdale , Michael A. Haase , Terry L. Smith
发明人： Zhaohui Yang , Yasha Yi , Catherine A. Leatherdale , Michael A. Haase , Terry L. Smith
IPC分类号： H01L33/04 , H01L33/58
CPC分类号： H01L33/08 , H01L25/167 , H01L33/0087 , H01L33/20 , H01L2924/0002 , H01L2933/0083 , H01L2924/00
摘要： A stack of semiconductor layers (310) forms a re-emitting semiconductor construction (RSC). The stack (310) includes an active region (316) that converts light at a first wavelength to light at a second wavelength, the active region (316) including at least one potential well. The stack (310) also includes an inactive region (318) extending from an outer surface of the stack to the active region. Depressions (326) are formed in the stack (310) that extend from the outer surface into the inactive region (318). An average depression depth is at least 50% of a thickness of the inactive region. Alternatively, the average depression depth is at least 50% of a nearest potential well distance. Still other alternative characterizations of the depressions (326) are also disclosed. The depressions (326) may have at least a 40% packing density in plan view. The depressions (326) may also have a substantial portion of their projected surface area associated with obliquely inclined surfaces.
摘要翻译：一叠半导体层（310）形成再发射半导体结构（RSC）。堆叠（310）包括将第一波长的光转换成第二波长的光的有源区（316），该有源区（316）包括至少一个势阱。堆叠（310）还包括从堆叠的外表面延伸到活动区域的非活性区域（318）。凹陷（326）形成在从外表面延伸到非活动区域（318）的堆叠（310）中。平均凹陷深度为非活性区域的厚度的至少50％。或者，平均凹陷深度为最近的潜在井距的至少50％。还公开了凹陷（326）的其他替代表征。在平面图中，凹陷（326）可以具有至少40％的包装密度。凹陷（326）也可以具有与倾斜倾斜表面相关联的其投影表面积的大部分。

7. 发明授权

US08461568B2 Re-emitting semiconductor construction with enhanced extraction efficiency 有权
标题翻译：重新发射半导体结构，提高了提取效率
公开(公告)号：US08461568B2
公开(公告)日：2013-06-11
申请号：US13264924
申请日：2010-04-30
申请人： Zhaohui Yang , Yasha Yi , Catherine A. Leatherdale , Michael A. Haase , Terry L. Smith
发明人： Zhaohui Yang , Yasha Yi , Catherine A. Leatherdale , Michael A. Haase , Terry L. Smith
IPC分类号： H01L33/00
CPC分类号： H01L33/08 , H01L25/167 , H01L33/0087 , H01L33/20 , H01L2924/0002 , H01L2933/0083 , H01L2924/00
摘要： A stack of semiconductor layers forms a re-emitting semiconductor construction (RSC). The stack includes an active region that converts light at a first wavelength to light at a second wavelength, the active region including at least one potential well. The stack also includes an inactive region extending from an outer surface of the stack to the active region. Depressions are formed in the stack that extend from the outer surface into the inactive region. An average depression depth is at least 50% of a thickness of the inactive region or at least 50% of a nearest potential well distance. The depressions may have at least a 40% packing density in plan view. The depressions may also have a substantial portion of their projected surface area associated with obliquely inclined surfaces.
摘要翻译：一叠半导体层形成再发射半导体结构（RSC）。堆叠包括将第一波长的光转换成第二波长的光的有源区，该有源区包括至少一个势阱。堆叠还包括从堆叠的外表面延伸到活动区域的无效区域。在堆叠中形成凹陷，其从外表面延伸到非活性区域。平均凹陷深度为无活性区域的厚度的至少50％或最近的潜在井距离的至少50％。在平面图中，凹陷可以具有至少40％的包装密度。凹陷部也可以具有与倾斜倾斜表面相关联的其投影表面积的大部分。

8. 发明授权

US08193543B2 Monochromatic light source with high aspect ratio 失效
标题翻译：具有高纵横比的单色光源
公开(公告)号：US08193543B2
公开(公告)日：2012-06-05
申请号：US13058315
申请日：2009-08-18
申请人： Catherine A. Leatherdale , Michael A. Haase , Todd A. Ballen
发明人： Catherine A. Leatherdale , Michael A. Haase , Todd A. Ballen
IPC分类号： H01L27/15
CPC分类号： H01L33/20 , H01L33/08 , H01L33/10 , H01L33/505
摘要： Light emitting systems are disclosed. The light emitting system includes an LED that emits light at a first wave-length. A primary portion of the emitted first wavelength light exits the LED from a top surface of the LED that has a minimum lateral dimension Wmin. The remaining portion of the emitted first wavelength light exits the LED from one or more sides of the LED that has a maximum edge thickness Tmax (122, 124). The ratio Wmin/Tmax is at least 30. The light emitting system further includes a re-emitting semiconductor construction that includes a semiconductor potential well. The re-emitting semiconductor construction receives the first wavelength light that exits the LED from the top surface and converts at least a portion of the received light to light of a second wavelength. The integrated emission intensity of all light at the second wavelength that exit the light emitting system is at least 4 times the integrated emission intensity of all light at the first wavelength that exit the light emitting system.
摘要翻译：公开了发光系统。发光系统包括发射第一波长的光的LED。发射的第一波长光的主要部分从具有最小横向尺寸Wmin的LED的顶表面离开LED。发射的第一波长光的剩余部分从具有最大边缘厚度Tmax（122,124）的LED的一侧或多侧离开LED。比率Wmin / Tmax至少为30.发光系统还包括包括半导体势阱的再发射半导体结构。再发射半导体结构从顶表面接收离开LED的第一波长光，并将接收的光的至少一部分转换成第二波长的光。离开发光系统的第二波长的所有光的集成发射强度是离开发光系统的第一波长的所有光的集成发射强度的至少4倍。

9. 发明申请

US20110140128A1 MONOCHROMATIC LIGHT SOURCE WITH HIGH ASPECT RATIO 失效
标题翻译：单色光源高倍率
公开(公告)号：US20110140128A1
公开(公告)日：2011-06-16
申请号：US13058315
申请日：2009-08-18
申请人： Catherine A. Leatherdale , Michael A. Haase , Todd A. Ballen
发明人： Catherine A. Leatherdale , Michael A. Haase , Todd A. Ballen
IPC分类号： H01L33/50 , H01L33/20 , H01L33/28
CPC分类号： H01L33/20 , H01L33/08 , H01L33/10 , H01L33/505
摘要： Light emitting systems are disclosed. The light emitting system includes an LED that emits light at a first wave-length. A primary portion of the emitted first wavelength light exits the LED from a top surface of the LED that has a minimum lateral dimension Wmin. The remaining portion of the emitted first wavelength light exits the LED from one or more sides of the LED that has a maximum edge thickness Tmax (122, 124). The ratio Wmin/Tmax is at least 30. The light emitting system further includes a re-emitting semiconductor construction that includes a semiconductor potential well. The re-emitting semiconductor construction receives the first wavelength light that exits the LED from the top surface and converts at least a portion of the received light to light of a second wavelength. The integrated emission intensity of all light at the second wavelength that exit the light emitting system is at least 4 times the integrated emission intensity of all light at the first wavelength that exit the light emitting system.
摘要翻译：公开了发光系统。发光系统包括发射第一波长的光的LED。发射的第一波长光的主要部分从具有最小横向尺寸Wmin的LED的顶表面离开LED。发射的第一波长光的剩余部分从具有最大边缘厚度Tmax（122,124）的LED的一侧或多侧离开LED。比率Wmin / Tmax至少为30.发光系统还包括包括半导体势阱的再发射半导体结构。再发射半导体结构从顶表面接收离开LED的第一波长光，并将接收的光的至少一部分转换成第二波长的光。离开发光系统的第二波长的所有光的集成发射强度是离开发光系统的第一波长的所有光的集成发射强度的至少4倍。

10. 发明申请

US20110140129A1 LIGHT SOURCE WITH IMPROVED MONOCHROMATICITY 审中-公开
标题翻译：光源具有改善的单色性
公开(公告)号：US20110140129A1
公开(公告)日：2011-06-16
申请号：US13059022
申请日：2009-08-18
申请人： Catherine A. Leatherdale , Todd A. Ballen , Thomas J. Miller
发明人： Catherine A. Leatherdale , Todd A. Ballen , Thomas J. Miller
IPC分类号： H01L31/173
CPC分类号： H01L33/08 , H01L33/04 , H01L33/105 , H01L33/44 , H01L33/50
摘要： Light emitting systems are disclosed. The light emitting system includes an LED that emits light at a first wavelength and includes a pattern that enhances emission of light from a top surface of the LED and suppresses emission of light from one or more sides of the LED. The light emitting system further includes a re-emitting semiconductor construction that includes a II-VI potential well. The re-emitting semiconductor construction receives the first wavelength light that exits the LED and converts at least a portion of the received light to light of a second wavelength. The integrated emission intensity of all light at the second wavelength that exit the light emitting system is at least 4 times the integrated emission intensity of all light at the first wavelength that exit the light emitting system.
摘要翻译：公开了发光系统。发光系统包括发射第一波长的光的LED，并且包括增强从LED的顶表面发射光的图案，并抑制来自LED的一侧或多侧的光的发射。发光系统还包括包括II-VI势阱的再发射半导体结构。再发射半导体结构接收离开LED的第一波长光，并将接收到的光的至少一部分转换成第二波长的光。离开发光系统的第二波长的所有光的集成发射强度是离开发光系统的第一波长的所有光的集成发射强度的至少4倍。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式