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1. 发明申请

US20090243063A1 PACKAGING METHOD OF MICRO ELECTRO MECHANICAL SYSTEM DEVICE AND PACKAGE THEREOF 审中-公开
标题翻译：微电子机械系统装置的包装方法及其包装
公开(公告)号：US20090243063A1
公开(公告)日：2009-10-01
申请号：US12404743
申请日：2009-03-16
申请人： Jun-Bo Yoon , Byung-Kee Lee , Weon-Wi Jang
发明人： Jun-Bo Yoon , Byung-Kee Lee , Weon-Wi Jang
IPC分类号： H01L23/02 , H01L21/50
CPC分类号： B81C1/00333 , B81C2201/0149 , B81C2203/0136 , B81C2203/0145 , B82Y30/00
摘要： Disclosed are a micro electro mechanical system (MEMS) device and a package thereof. The packaging method of a MEMS device comprises: sequentially forming a sacrificial layer, a support layer, and a block copolymer layer on a substrate on which the MEMS device is formed; self-assembling the block copolymer layer formed on the support layer; selectively etching a part of the self-assembled block copolymer layer to form a plurality of nano-pores; forming a plurality of etching holes in the support layer corresponding to the plurality of nano-pores using the block copolymer layer in which the plurality of nano-pores are formed as a mask; removing the sacrificial layer using the etching holes formed in the support layer; and forming a shielding layer on the support layer.
摘要翻译：公开了一种微机电系统（MEMS）装置及其封装。 MEMS器件的封装方法包括：在其上形成MEMS器件的衬底上顺序形成牺牲层，支撑层和嵌段共聚物层; 自组装形成在支撑层上的嵌段共聚物层; 选择性地蚀刻部分自组装嵌段共聚物层以形成多个纳米孔; 使用其中形成有多个纳米孔作为掩模的嵌段共聚物层，在与多个纳米孔相对应的支撑层中形成多个蚀刻孔; 使用形成在支撑层中的蚀刻孔去除牺牲层; 并在支撑层上形成屏蔽层。

2. 发明申请

US20090021972A1 MEMORY ARRAY USING MECHANICAL SWITCH AND METHOD FOR OPERATING THEREOF 有权
标题翻译：使用机械开关的存储器阵列及其操作方法
公开(公告)号：US20090021972A1
公开(公告)日：2009-01-22
申请号：US12122318
申请日：2008-05-16
申请人： Jun-Bo Yoon , Jeong-Oen Lee , Weon-Wi Jang
发明人： Jun-Bo Yoon , Jeong-Oen Lee , Weon-Wi Jang
IPC分类号： G11C5/00 , G11C11/24 , G11C7/00
CPC分类号： G11C23/00 , G11C11/565
摘要： A method for controlling a memory array using a mechanical switch according to the present invention, in which the memory array comprises; a plurality of word lines; a plurality of bit lines intersecting each other with the plurality of word lines; a gate electrode connected to each of the word lines; a drain electrode spaced apart from the gate electrode and connected to a capacitor; and a source electrode comprises: an anchor part spaced apart from the gate electrode and connected to each of the bit lines; a mobile part where a dimple is formed, comprises the steps of: applying a first voltage V1 to the bit line selected from the plurality of bit lines; applying a second voltage V2 greater than a sum of the first voltage V1 and a pull-in voltage Vpi to the word lines selected from the plurality of word lines; and applying a voltage smaller than a sum of a erase voltage Verase and the pull-in voltage Vpi and a voltage greater than a difference between a write voltage Vwrite and the pull-in voltage Vpi to the word lines unselected from the plurality of word lines.
摘要翻译：一种使用根据本发明的机械开关来控制存储器阵列的方法，其中存储器阵列包括：多个字线; 多个位线与所述多个字线相交; 连接到每个字线的栅电极; 与栅电极间隔开并连接到电容器的漏电极; 并且源电极包括：与栅电极间隔开并连接到每个位线的锚定部分; 形成凹坑的移动部件包括以下步骤：将第一电压V1施加到从多个位线中选择的位线; 将大于第一电压V1和引入电压Vpi的和的第二电压V2施加到从多个字线中选择的字线; 以及将小于擦除电压Verase和引入电压Vpi之和的电压和大于写入电压V write和引入电压Vpi之间的电压的电压施加到从多个字线未被选择的字线。

3. 发明授权

US07787276B2 Memory array using mechanical switch and method for operating thereof 有权
标题翻译：使用机械开关的存储器阵列及其操作方法
公开(公告)号：US07787276B2
公开(公告)日：2010-08-31
申请号：US12122318
申请日：2008-05-16
申请人： Jun-Bo Yoon , Weon-Wi Jang , Jeong-Oen Lee
发明人： Jun-Bo Yoon , Weon-Wi Jang , Jeong-Oen Lee
IPC分类号： G11C5/00
CPC分类号： G11C23/00 , G11C11/565
摘要： A method for controlling a memory array using a mechanical switch according to the present invention, in which the memory array comprises; a plurality of word lines; a plurality of bit lines intersecting each other with the plurality of word lines; a gate electrode connected to each of the word lines; a drain electrode spaced apart from the gate electrode and connected to a capacitor; and a source electrode comprises: an anchor part spaced apart from the gate electrode and connected to each of the bit lines; a mobile part where a dimple is formed, comprises the steps of: applying a first voltage V1 to the bit line selected from the plurality of bit lines; applying a second voltage V2 greater than a sum of the first voltage V1 and a pull-in voltage Vpi to the word lines selected from the plurality of word lines; and applying a voltage smaller than a sum of a erase voltage Verase and the pull-in voltage Vpi and a voltage greater than a difference between a write voltage Vwrite and the pull-in voltage Vpi to the word lines unselected from the plurality of word lines.
摘要翻译：一种使用根据本发明的机械开关来控制存储器阵列的方法，其中存储器阵列包括：多个字线; 多个位线与所述多个字线相交; 连接到每个字线的栅电极; 与栅电极间隔开并连接到电容器的漏电极; 并且源电极包括：与栅电极间隔开并连接到每个位线的锚定部分; 形成凹坑的移动部件包括以下步骤：将第一电压V1施加到从多个位线中选择的位线; 将大于第一电压V1和引入电压Vpi的和的第二电压V2施加到从多个字线中选择的字线; 以及将小于擦除电压Verase和引入电压Vpi之和的电压和大于写入电压V write和引入电压Vpi之间的电压的电压施加到从多个字线未被选择的字线。

4. 发明申请

US20100046079A1 Polymer pattern and metal film pattern, metal pattern, plastic mold using thereof, and method of the forming the same 审中-公开
标题翻译：聚合物图案和金属膜图案，金属图案，使用其的塑料模具及其形成方法
公开(公告)号：US20100046079A1
公开(公告)日：2010-02-25
申请号：US10584409
申请日：2005-02-04
申请人： Jun-Bo Yoon , Sung-il Chang , Dae-Hyun Kim , Hyung Suk Lee , Joon-Yong Choi , Weon-Wi Jang , Kyungho Lee
发明人： Jun-Bo Yoon , Sung-il Chang , Dae-Hyun Kim , Hyung Suk Lee , Joon-Yong Choi , Weon-Wi Jang , Kyungho Lee
IPC分类号： G02B27/12 , G03F7/20 , B32B3/00 , B29D11/00 , H01H57/00 , H05K1/00
CPC分类号： H01L21/0272 , B81B2203/0118 , B81B2203/019 , B81B2203/04 , B81C1/0015 , B81C1/00166 , G02B3/0012 , G02B3/0056 , G03F7/0005 , G03F7/201 , G03F7/2014 , H01L21/0274 , H01L21/76885 , H01L23/5222 , H01L2924/0002 , Y10T428/24479 , H01L2924/00
摘要： The present invention relates to polymer patterns of various shapes formed using modifications of means and methods used in the prior lithography process, and the metal film patterns, metal patterns and plastic molds using the polymer patterns, as well as methods of forming these patterns and molds. The method of forming the polymer patterns comprises the steps of: (a) depositing a photosensitive polymer on the substrate to form a polymer film; (b) placing a photomask on the polymer film; and (c) irradiating the polymer film with a light moving in random direction through the photomask, so as to form at least one pattern which is concave from the surface of the polymer film in a direction perpendicular to the substrate and extends in a direction parallel to the substrate. The inventive polymer patterns have at least one pattern which is concave from the surface of the polymer film in a direction perpendicular to the substrate and extends in a direction parallel to the substrate. The vertical cross-section of the concave patterns has at least one curved surface.
摘要翻译：本发明涉及使用在现有光刻工艺中使用的方法和方法的改进形成的各种形状的聚合物图案，以及使用聚合物图案的金属膜图案，金属图案和塑料模具以及形成这些图案和模具的方法。形成聚合物图案的方法包括以下步骤：（a）将光敏聚合物沉积在基底上以形成聚合物膜; （b）将光掩模放在聚合物膜上; 和（c）以沿随机方向移动的光照射聚合物膜通过光掩模，从而形成至少一个图案，该图案在垂直于基底的方向上从聚合物膜的表面凹入并在平行方向上延伸到基底。本发明的聚合物图案具有至少一种图案，其在垂直于基底的方向上从聚合物膜的表面凹入，并且在平行于基底的方向上延伸。凹形图案的垂直横截面具有至少一个曲面。

5. 发明申请

US20100135064A1 SWITCH AND METHOD OF FORMING THE SAME 有权
标题翻译：开关及其形成方法
公开(公告)号：US20100135064A1
公开(公告)日：2010-06-03
申请号：US12533581
申请日：2009-07-31
申请人： Min-Sang Kim , Ji-Myoung Lee , Hyun-Jun Bae , Dong-Won Kim , Jun Seo , Yong-Hyun Kwon , Weon-Wi Jang , Keun-Hwi Cho
发明人： Min-Sang Kim , Ji-Myoung Lee , Hyun-Jun Bae , Dong-Won Kim , Jun Seo , Yong-Hyun Kwon , Weon-Wi Jang , Keun-Hwi Cho
IPC分类号： G11C11/24 , H01L27/108
CPC分类号： H01L27/101 , H01L27/108 , H01L27/10882 , H01L27/10885 , H01L27/10891 , H01L27/10897 , H01L28/40 , H01L29/685
摘要： A memory device includes a memory cell that includes a storage node, a first electrode, and a second electrode, the storage node stores an electrical charge, and the first electrode moves to connect to the storage node when the second electrode is energized.
摘要翻译：存储器件包括存储单元，其包括存储节点，第一电极和第二电极，所述存储节点存储电荷，并且当所述第二电极通电时，所述第一电极移动以连接到所述存储节点。

6. 发明授权

US08391057B2 Switch and method of forming the same 有权
标题翻译：开关及其形成方法
公开(公告)号：US08391057B2
公开(公告)日：2013-03-05
申请号：US12533581
申请日：2009-07-31
申请人： Min-Sang Kim , Ji-Myoung Lee , Hyun-Jun Bae , Dong-Won Kim , Jun Seo , Yong-Hyun Kwon , Weon-Wi Jang , Keun-Hwi Cho
发明人： Min-Sang Kim , Ji-Myoung Lee , Hyun-Jun Bae , Dong-Won Kim , Jun Seo , Yong-Hyun Kwon , Weon-Wi Jang , Keun-Hwi Cho
IPC分类号： G11C11/50 , H01L27/108
CPC分类号： H01L27/101 , H01L27/108 , H01L27/10882 , H01L27/10885 , H01L27/10891 , H01L27/10897 , H01L28/40 , H01L29/685
摘要： A memory device includes a memory cell that includes a storage node, a first electrode, and a second electrode, the storage node stores an electrical charge, and the first electrode moves to connect to the storage node when the second electrode is energized.
摘要翻译：存储器件包括存储单元，其包括存储节点，第一电极和第二电极，所述存储节点存储电荷，并且当所述第二电极通电时，所述第一电极移动以连接到所述存储节点。

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