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    • 1. 发明申请
    • Method for producing an organic thin film transistor and an organic thin film transistor produced by the method
    • 通过该方法制造有机薄膜晶体管和有机薄膜晶体管的方法
    • US20070212807A1
    • 2007-09-13
    • US11714059
    • 2007-03-05
    • Jun YamadaYuya HiraoNaoki Masazumi
    • Jun YamadaYuya HiraoNaoki Masazumi
    • H01L51/40
    • H01L51/0545H01L51/0023H01L51/0055H01L51/0525H01L51/102
    • A method for producing an organic thin film transistor having, on a substrate, a source electrode, a gate electrode, a drain electrode, an insulating layer and an organic semiconductor layer. The method has a step of forming the source electrode and the drain electrode such that one of the source electrode and the drain electrode which is an inner-located electrode has an outer circumference which is circular or polygonal and that the other electrode which is an outer-located electrode has an inner circumference facing the outer circumference of the inner-located electrode, the inner circumference being of a shape which is substantially concentric with the outer circumference of the inner-located electrode. The method also has a step of forming the organic semiconductor layer for connecting the source electrode and the drain electrode to each other by a process of dropping an organic semiconductor material.
    • 一种有机薄膜晶体管的制造方法,其在基板上具有源电极,栅电极,漏电极,绝缘层和有机半导体层。 该方法具有形成源电极和漏极的步骤,使得作为内部定位电极的源电极和漏电极中的一个具有圆形或多边形的外周,并且作为外部的另一个电极 定位电极具有面向内部定位电极的外周的内周,内周的形状与内定位电极的外周基本同心。 该方法还具有通过滴加有机半导体材料的工艺形成用于将源极和漏电极彼此连接的有机半导体层的步骤。
    • 3. 发明授权
    • Method for producing an organic thin film transistor and an organic thin film transistor produced by the method
    • 通过该方法制造有机薄膜晶体管和有机薄膜晶体管的方法
    • US08372686B2
    • 2013-02-12
    • US11714059
    • 2007-03-05
    • Jun YamadaYuya HiraoNaoki Masazumi
    • Jun YamadaYuya HiraoNaoki Masazumi
    • H01L21/00
    • H01L51/0545H01L51/0023H01L51/0055H01L51/0525H01L51/102
    • A method for producing an organic thin film transistor having, on a substrate, a source electrode, a gate electrode, a drain electrode, an insulating layer and an organic semiconductor layer. The method has a step of forming the source electrode and the drain electrode such that one of the source electrode and the drain electrode which is an inner-located electrode has an outer circumference which is circular or polygonal and that the other electrode which is an outer-located electrode has an inner circumference facing the outer circumference of the inner-located electrode, the inner circumference being of a shape which is substantially concentric with the outer circumference of the inner-located electrode. The method also has a step of forming the organic semiconductor layer for connecting the source electrode and the drain electrode to each other by a process of dropping an organic semiconductor material.
    • 一种有机薄膜晶体管的制造方法,其在基板上具有源电极,栅电极,漏电极,绝缘层和有机半导体层。 该方法具有形成源电极和漏极的步骤,使得作为内部定位电极的源电极和漏电极中的一个具有圆形或多边形的外周,并且作为外部的另一个电极 位置电极具有面向内部定位电极的外周的内周,内周具有与内定位电极的外周基本同心的形状。 该方法还具有通过滴加有机半导体材料的工艺形成用于将源极和漏电极彼此连接的有机半导体层的步骤。
    • 8. 发明授权
    • Thin film transistor and method for manufacturing the same
    • 薄膜晶体管及其制造方法
    • US08653527B2
    • 2014-02-18
    • US13256214
    • 2010-03-05
    • Jun Yamada
    • Jun Yamada
    • H01L29/04H01L29/08H01L29/10H01L29/76H01L29/15
    • H01L51/102H01L51/0023H01L51/0541
    • Disclosed is a method for manufacturing a thin film transistor in which a semiconductor film in a channel portion is provided between a source electrode and a drain electrode, wherein a partition layer (a bank) can be appropriately formed. The method comprises the steps of: forming two underlying electrodes on an underlying layer; forming a partition layer on the surface of the underlying layer containing the two underlying electrodes so as to surround an area where the source electrode and the drain electrode are to be formed; forming the source electrode and the drain electrode by a plating method on the surfaces of the two underlying electrodes, which are surrounded by the partition layer; and applying semiconductor solution, in which a semiconductor material is dissolved or dispersed, to the area surrounded by the partition layer so that a semiconductor film is formed in the area.
    • 公开了一种制造薄膜晶体管的方法,其中沟道部分中的半导体膜设置在源极和漏极之间,其中可以适当地形成分隔层(堤)。 该方法包括以下步骤:在下层上形成两个底层电极; 在包含两个底层电极的下层的表面上形成分隔层,以围绕要形成源电极和漏电极的区域; 通过电镀法形成源电极和漏电极,在由分隔层包围的两个下电极的表面上; 并且将半导体材料溶解或分散的半导体溶液施加到由分隔层包围的区域,使得在该区域中形成半导体膜。
    • 9. 发明授权
    • Steering column device
    • 转向柱装置
    • US08505407B2
    • 2013-08-13
    • US11658548
    • 2005-07-15
    • Tetsuo NomuraJun Yamada
    • Tetsuo NomuraJun Yamada
    • B62D1/18
    • B62D1/185B22D17/00B62D1/184
    • A steering column device where an inner column can be reliably clamped and sufficient rigidity and strength of an outer column can be achieved. A semi-circular arc rib (132) is formed on the peripheral edge of a closed end section (131) of a slit (13). The rib (132) is substantially semi-circular are-shaped and projects outward from an outer peripheral surface (15A) of an outer column (1). Further, linear ribs (133A, 133B) extend linearly toward the vehicle body front side so as to be continuous from the vehicle body front side of the semi-circular arc rib (132). The semi-circular arc rib (132) and the linear ribs (133A, 133B) reinforce the peripheral edge of the slit (13) of the outer column (1) whose rigidity and strength are impaired. Thus the rigidity and strength of the outer column (1) are improved.
    • 可以可靠地夹紧内柱的转向柱装置,并且可以实现足够的刚性和外柱的强度。 在狭缝(13)的封闭端部(131)的周缘形成有半圆弧状的肋(132)。 肋(132)基本上是半圆形的,并且从外柱(1)的外周表面(15A)向外突出。 此外,线状肋(133A,133B)从半圆弧肋(132)的车体前侧连续地朝向车身前侧延伸。 半圆弧肋(132)和直线肋(133A,133B)加强其刚性和强度受损的外柱(1)的狭缝(13)的周边边缘。 因此,外柱(1)的刚性和强度提高。