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1. 发明申请

US20100323473A1 METHOD OF FORMING ORGANIC SEMICONDUCTOR LAYER AND METHOD OF MANUFACTURING ORGANIC THIN FILM TRANSISTOR 有权
标题翻译：有机半导体层的形成方法和制造有机薄膜晶体管的方法
公开(公告)号：US20100323473A1
公开(公告)日：2010-12-23
申请号：US12866839
申请日：2009-01-30
申请人： Jun Yamada , Yuya Hirao
发明人： Jun Yamada , Yuya Hirao
IPC分类号： H01L51/40 , H01L51/00
CPC分类号： H01L51/0005 , H01L51/0545
摘要： Disclosed is a method of forming an organic semiconductor layer comprising the steps of preparing a substrate having a groove formed on the surface, applying, to the surface of the substrate, a droplet of an organic semiconductor liquid in which an organic semiconductor material is dissolved or dispersed in a solvent, and drying the droplet to form the organic semiconductor layer, wherein the droplet is applied to a position of the substrate where a part of the circumference of the droplet is introduced into the groove.
摘要翻译：公开了一种形成有机半导体层的方法，包括以下步骤：制备具有在表面上形成的沟槽的衬底，向衬底的表面施加溶解有机半导体材料的有机半导体液体的液滴;或分散在溶剂中，干燥液滴以形成有机半导体层，其中将液滴施加到基板的位置，其中液滴的圆周的一部分被引入凹槽中。

2. 发明申请

US20070212807A1 Method for producing an organic thin film transistor and an organic thin film transistor produced by the method 有权
标题翻译：通过该方法制造有机薄膜晶体管和有机薄膜晶体管的方法
公开(公告)号：US20070212807A1
公开(公告)日：2007-09-13
申请号：US11714059
申请日：2007-03-05
申请人： Jun Yamada , Yuya Hirao , Naoki Masazumi
发明人： Jun Yamada , Yuya Hirao , Naoki Masazumi
IPC分类号： H01L51/40
CPC分类号： H01L51/0545 , H01L51/0023 , H01L51/0055 , H01L51/0525 , H01L51/102
摘要： A method for producing an organic thin film transistor having, on a substrate, a source electrode, a gate electrode, a drain electrode, an insulating layer and an organic semiconductor layer. The method has a step of forming the source electrode and the drain electrode such that one of the source electrode and the drain electrode which is an inner-located electrode has an outer circumference which is circular or polygonal and that the other electrode which is an outer-located electrode has an inner circumference facing the outer circumference of the inner-located electrode, the inner circumference being of a shape which is substantially concentric with the outer circumference of the inner-located electrode. The method also has a step of forming the organic semiconductor layer for connecting the source electrode and the drain electrode to each other by a process of dropping an organic semiconductor material.
摘要翻译：一种有机薄膜晶体管的制造方法，其在基板上具有源电极，栅电极，漏电极，绝缘层和有机半导体层。该方法具有形成源电极和漏极的步骤，使得作为内部定位电极的源电极和漏电极中的一个具有圆形或多边形的外周，并且作为外部的另一个电极定位电极具有面向内部定位电极的外周的内周，内周的形状与内定位电极的外周基本同心。该方法还具有通过滴加有机半导体材料的工艺形成用于将源极和漏电极彼此连接的有机半导体层的步骤。

3. 发明授权

US08372686B2 Method for producing an organic thin film transistor and an organic thin film transistor produced by the method 有权
标题翻译：通过该方法制造有机薄膜晶体管和有机薄膜晶体管的方法
公开(公告)号：US08372686B2
公开(公告)日：2013-02-12
申请号：US11714059
申请日：2007-03-05
申请人： Jun Yamada , Yuya Hirao , Naoki Masazumi
发明人： Jun Yamada , Yuya Hirao , Naoki Masazumi
IPC分类号： H01L21/00
CPC分类号： H01L51/0545 , H01L51/0023 , H01L51/0055 , H01L51/0525 , H01L51/102
摘要： A method for producing an organic thin film transistor having, on a substrate, a source electrode, a gate electrode, a drain electrode, an insulating layer and an organic semiconductor layer. The method has a step of forming the source electrode and the drain electrode such that one of the source electrode and the drain electrode which is an inner-located electrode has an outer circumference which is circular or polygonal and that the other electrode which is an outer-located electrode has an inner circumference facing the outer circumference of the inner-located electrode, the inner circumference being of a shape which is substantially concentric with the outer circumference of the inner-located electrode. The method also has a step of forming the organic semiconductor layer for connecting the source electrode and the drain electrode to each other by a process of dropping an organic semiconductor material.
摘要翻译：一种有机薄膜晶体管的制造方法，其在基板上具有源电极，栅电极，漏电极，绝缘层和有机半导体层。该方法具有形成源电极和漏极的步骤，使得作为内部定位电极的源电极和漏电极中的一个具有圆形或多边形的外周，并且作为外部的另一个电极位置电极具有面向内部定位电极的外周的内周，内周具有与内定位电极的外周基本同心的形状。该方法还具有通过滴加有机半导体材料的工艺形成用于将源极和漏电极彼此连接的有机半导体层的步骤。

4. 发明授权

US08329504B2 Method of forming organic semiconductor layer and method of manufacturing organic thin film transistor 有权
标题翻译：形成有机半导体层的方法和制造有机薄膜晶体管的方法
公开(公告)号：US08329504B2
公开(公告)日：2012-12-11
申请号：US12866839
申请日：2009-01-30
申请人： Jun Yamada , Yuya Hirao
发明人： Jun Yamada , Yuya Hirao
IPC分类号： H01L51/40
CPC分类号： H01L51/0005 , H01L51/0545
摘要： Disclosed is a method of forming an organic semiconductor layer comprising the steps of preparing a substrate having a groove formed on the surface, applying, to the surface of the substrate, a droplet of an organic semiconductor liquid in which an organic semiconductor material is dissolved or dispersed in a solvent, and drying the droplet to form the organic semiconductor layer, wherein the droplet is applied to a position of the substrate where a part of the circumference of the droplet is introduced into the groove.
摘要翻译：公开了一种形成有机半导体层的方法，包括以下步骤：制备具有在表面上形成的沟槽的衬底，向衬底的表面施加溶解有机半导体材料的有机半导体液体的液滴;或分散在溶剂中，干燥液滴以形成有机半导体层，其中将液滴施加到基板的位置，其中液滴的圆周的一部分被引入凹槽中。

5. 发明授权

US08721380B2 Method for manufacturing display panel 失效
标题翻译：显示面板制造方法
公开(公告)号：US08721380B2
公开(公告)日：2014-05-13
申请号：US13389757
申请日：2010-06-08
申请人： Yuya Hirao , Masakazu Okada
发明人： Yuya Hirao , Masakazu Okada
IPC分类号： G02F1/15 , G02F1/17
CPC分类号： G02F1/1341 , G02F1/1339
摘要： Disclosed is a method for manufacturing a display panel, which employs a vacuum bonding method. A display material is dispensed such that the height distance from the upper surface of a lower substrate to the top of the display material is larger than the height distance from the surface of either upper or lower substrate on which the seal pattern is formed to the apex of the seal pattern. The upper substrate is placed at a position where the upper substrate and the top of the display material in the height direction are in touch with each other and the seal pattern on one substrate is not in touch with the other substrate, then, air is released. Thus, volatilization of the display material is reduced easily at small cost to prevent drying of the surface of the display material, and the display qualities can be prevented from being degraded.
摘要翻译：公开了一种使用真空接合方法制造显示面板的方法。分配显示材料，使得从下基板的上表面到显示材料的顶部的高度距离大于从其上形成密封图案的上基板或下基板的表面到顶点的高度距离的密封图案。上基板被放置在上基板和显示材料的顶部在高度方向上彼此接触的位置，并且一个基板上的密封图案与另一个基板不接触，然后释放空气。因此，显示材料的挥发容易降低，以防止显示材料的表面干燥，并且可以防止显示质量下降。

6. 发明申请

US20120142246A1 Method for Manufacturing Display Panel 失效
标题翻译：制造显示面板的方法
公开(公告)号：US20120142246A1
公开(公告)日：2012-06-07
申请号：US13389757
申请日：2010-06-08
申请人： Yuya Hirao , Masakazu Okada
发明人： Yuya Hirao , Masakazu Okada
IPC分类号： H01J9/20
CPC分类号： G02F1/1341 , G02F1/1339
摘要： Disclosed is a method for manufacturing a display panel, which employs a vacuum bonding method. A display material is dispensed such that the height distance from the upper surface of a lower substrate to the top of the display material is larger than the height distance from the surface of either upper or lower substrate on which the seal pattern is formed to the apex of the seal pattern. The upper substrate is placed at a position where the upper substrate and the top of the display material in the height direction are in touch with each other and the seal pattern on one substrate is not in touch with the other substrate, then, air is released. Thus, volatilization of the display material is reduced easily at small cost to prevent drying of the surface of the display material, and the display qualities can be prevented from being degraded.
摘要翻译：公开了一种使用真空接合方法制造显示面板的方法。分配显示材料，使得从下基板的上表面到显示材料的顶部的高度距离大于从其上形成密封图案的上基板或下基板的表面到顶点的高度距离的密封图案。上基板被放置在上基板和显示材料的顶部在高度方向上彼此接触的位置，并且一个基板上的密封图案与另一个基板不接触，然后释放空气。因此，显示材料的挥发容易降低，以防止显示材料的表面干燥，并且可以防止显示质量下降。

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