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1. 发明授权

US06734517B2 Semiconductor laser diode module 有权
标题翻译：半导体激光二极管模块
公开(公告)号：US06734517B2
公开(公告)日：2004-05-11
申请号：US09867449
申请日：2001-05-31
申请人： Jun Miyokawa , Yuichiro Irie , Etsuji Katayama , Kaoru Sekiguchi , Kiyokazu Tateno
发明人： Jun Miyokawa , Yuichiro Irie , Etsuji Katayama , Kaoru Sekiguchi , Kiyokazu Tateno
IPC分类号： H01L310232
CPC分类号： G02B6/4201 , G02B6/4202 , G02B6/4203 , G02B6/4204 , G02B6/4208 , G02B6/4237 , G02B6/4248
摘要： A semiconductor laser diode module in which a laser diode and an optical fiber are optically coupled with each other efficiently irrespective of an ambient temperature change within the laser diode module. The laser diode module includes a laser diode, an optical system including an optical fiber and a lens portion, a base configured to support the laser diode and at least a portion of the optical system, and a bottom plate configured to support the laser diode, the optical system, and the base. The optical system is configured to receive and transmit a beam emitted from the laser diode through the lens portion to the optical fiber along an optical axis. The base includes a structural support member configured to prevent warping of the base, where the structural support member extends along the base in a direction generally parallel to the optical axis.
摘要翻译：一种半导体激光二极管模块，其中激光二极管和光纤彼此光学耦合，而与激光二极管模块内的环境温度变化无关。激光二极管模块包括激光二极管，包括光纤和透镜部分的光学系统，被配置为支撑激光二极管和至少一部分光学系统的基座以及被配置为支撑激光二极管的底板，光学系统和基座。光学系统被配置为沿着光轴接收并发射从激光二极管通过透镜部分发射到光纤的光束。底座包括构造成防止基部翘曲的结构支撑构件，其中结构支撑构件沿着大致平行于光轴的方向沿基座延伸。

2. 发明授权

US07030422B2 Semiconductor laser diode module 有权
公开(公告)号：US07030422B2
公开(公告)日：2006-04-18
申请号：US10622703
申请日：2003-07-21
申请人： Jun Miyokawa , Yuichiro Irie , Etsuji Katayama , Kaoru Sekiguchi , Kiyokazu Tateno
发明人： Jun Miyokawa , Yuichiro Irie , Etsuji Katayama , Kaoru Sekiguchi , Kiyokazu Tateno
IPC分类号： H01L33/00
CPC分类号： G02B6/4201 , G02B6/4202 , G02B6/4203 , G02B6/4204 , G02B6/4208 , G02B6/4237 , G02B6/4248
摘要： A semiconductor laser diode module in which a laser diode and an optical fiber are optically coupled with each other efficiently irrespective of an ambient temperature change within the laser diode module. The laser diode module includes a laser diode, an optical system including an optical fiber and a lens portion, a holder configured to receive a portion of the optical system, a base having a holder mounting member and a fastening member, and a bottom plate configured to support the base. The holder is mounted to the fastening member at a first joint position, and the fastening member is mounted to the holder mounting member at a second joint position, where the first and second joint positions are located at substantially a same distance from the bottom plate. Alternatively, the first and second joint positions are coplanar with an active layer of the diode. Alternatively, the holder is mounted to the fastening member at a plurality of first joint positions, and the fastening member being mounted to the holder mounting member at a plurality of second joint positions, where the plurality of first and second joint positions are coplanar.

3. 发明授权

US06720582B2 Semiconductor laser diode module 有权
标题翻译：半导体激光二极管模块
公开(公告)号：US06720582B2
公开(公告)日：2004-04-13
申请号：US09867402
申请日：2001-05-31
申请人： Jun Miyokawa , Yuichiro Irie , Etsuji Katayama , Kaoru Sekiguchi , Kiyokazu Tateno
发明人： Jun Miyokawa , Yuichiro Irie , Etsuji Katayama , Kaoru Sekiguchi , Kiyokazu Tateno
IPC分类号： H01L3300
CPC分类号： G02B6/4201 , G02B6/4202 , G02B6/4203 , G02B6/4204 , G02B6/4208 , G02B6/4237 , G02B6/4248
摘要： A laser diode module in which a laser diode and an optical fiber are optically coupled with each other efficiently irrespective of an ambient temperature change within the laser diode module. The laser diode module includes a laser diode, an optical system, an optical system mounting member supporting at least a portion of the optical system, a laser diode mounting member, and a bottom plate supporting the laser diode, the optical system, the optical system mounting member, and the laser diode mounting member. The optical system receives and transmits a beam emitted from the laser diode through a lens portion to an optical fiber. The optical system mounting member is attached to the laser diode mounting member. The laser diode module preferably includes a thermo module having a first plate member attached to the laser diode mounting member. The laser diode mounting member is preferably formed of material having an expansion coefficient in a range between an expansion coefficient of the optical system mounting member and an expansion coefficient of the first plate member.
摘要翻译：激光二极管模块，其中激光二极管和光纤与激光二极管模块内的环境温度变化无关地有效地彼此光耦合。激光二极管模块包括激光二极管，光学系统，支撑光学系统的至少一部分的光学系统安装构件，激光二极管安装构件和支撑激光二极管的底板，光学系统，光学系统安装构件和激光二极管安装构件。光学系统通过透镜部分接收并发射从激光二极管发射的光束到光纤。光学系统安装构件附接到激光二极管安装构件。激光二极管模块优选地包括具有附接到激光二极管安装构件的第一板构件的热模块。激光二极管安装构件优选由具有在光学系统安装构件的膨胀系数和第一板构件的膨胀系数之间的范围内的膨胀系数的材料形成。

4. 发明授权

US06529535B2 Laser diode module 有权
公开(公告)号：US06529535B2
公开(公告)日：2003-03-04
申请号：US09772874
申请日：2001-01-31
申请人： Etsuji Katayama , Yuichiro Irie , Jun Miyokawa , Akira Mugino
发明人： Etsuji Katayama , Yuichiro Irie , Jun Miyokawa , Akira Mugino
IPC分类号： H01S500
CPC分类号： G02B6/4237 , G02B6/4203 , G02B6/424 , G02B6/4245 , G02B6/4269 , G02B6/4271 , G02B6/4286
摘要： There is provided a semiconductor laser device capable of increasing the optical output. The semiconductor laser module comprises a semiconductor laser device (1), an optical fiber (2) that receives light emitted from the semiconductor laser device (1) and a photo diode (3) that monitors optical output of the semiconductor laser device (1). The optical fiber (2) is a lensed fiber having a wedge-shaped lens on its tip and the photo diode (3) placed in the vicinity of the laser light receiving end (2a) of the semiconductor laser device (1) receives reflected light from a reflection surface (2a1) and monitors the optical output of the semiconductor laser device (1).

5. 发明授权

US06532107B2 Optical amplifier, light source module and optical system 有权
公开(公告)号：US06532107B2
公开(公告)日：2003-03-11
申请号：US09895256
申请日：2001-07-02
申请人： Takeharu Yamaguchi , Hideo Aoyagi , Toshiaki Tsuda , Yuichiro Irie , Etsuji Katayama , Takeo Shimizu
发明人： Takeharu Yamaguchi , Hideo Aoyagi , Toshiaki Tsuda , Yuichiro Irie , Etsuji Katayama , Takeo Shimizu
IPC分类号： H01S300
CPC分类号： H01S3/094003 , H01S3/0941
摘要： An optical amplifier of the present invention comprises a pumping light source configured to output a pumping light, an amplifier unit configured to receive the pumping light from said pumping light source and amplify an optical signal that passes therethrough, and an optical fiber disposed between said pumping light source and said amplifier unit, said optical fiber including an optical filter that is configured to attenuate the optical signal from said amplifier unit.

6. 发明授权

US08030224B2 Manufacturing method of semiconductor device, semiconductor device, communication apparatus, and semiconductor laser 有权
标题翻译：半导体器件，半导体器件，通信设备和半导体激光器的制造方法
公开(公告)号：US08030224B2
公开(公告)日：2011-10-04
申请号：US12785240
申请日：2010-05-21
申请人： Hidehiro Taniguchi , Takeshi Namegaya , Etsuji Katayama
发明人： Hidehiro Taniguchi , Takeshi Namegaya , Etsuji Katayama
IPC分类号： H01L21/00
CPC分类号： H01S5/16 , H01L21/02057 , H01S5/028 , H01S5/0282 , H01S5/2068
摘要： A method of manufacturing a semiconductor device including a semiconductor layer and a dielectric layer deposited on the semiconductor layer, including: forming the semiconductor layer; performing a surface treatment for removing a residual carbon compound, on a surface of the semiconductor layer formed; forming a dielectric film under a depositing condition corresponding to a surface state after the surface treatment, on at least a part of the surface of the semiconductor layer on which the surface treatment has been performed; and changing a crystalline state of at least a partial region of the semiconductor layer by performing a heat treatment on the semiconductor layer on which the dielectric film has been formed.
摘要翻译：一种制造半导体器件的方法，该半导体器件包括沉积在半导体层上的半导体层和电介质层，包括：形成半导体层; 在形成的半导体层的表面上进行表面处理以除去残留的碳化合物; 在对所述表面处理后的表面状态对应的沉积条件下，在已经进行了表面处理的半导体层的表面的至少一部分上形成电介质膜; 以及通过在已经形成有电介质膜的半导体层上进行热处理来改变半导体层的至少一部分区域的结晶状态。

7. 发明申请

US20100232464A1 MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE, SEMICONDUCTOR DEVICE, COMMUNICATION APPARATUS, AND SEMICONDUCTOR LASER 有权
标题翻译：半导体器件制造方法，半导体器件，通信设备和半导体激光器
公开(公告)号：US20100232464A1
公开(公告)日：2010-09-16
申请号：US12785240
申请日：2010-05-21
申请人： Hidehiro TANIGUCHI , Takeshi Namegaya , Etsuji Katayama
发明人： Hidehiro TANIGUCHI , Takeshi Namegaya , Etsuji Katayama
IPC分类号： H01S5/323 , H01L33/00
CPC分类号： H01S5/16 , H01L21/02057 , H01S5/028 , H01S5/0282 , H01S5/2068
摘要： A method of manufacturing a semiconductor device including a semiconductor layer and a dielectric layer deposited on the semiconductor layer, including: forming the semiconductor layer; performing a surface treatment for removing a residual carbon compound, on a surface of the semiconductor layer formed; forming a dielectric film under a depositing condition corresponding to a surface state after the surface treatment, on at least a part of the surface of the semiconductor layer on which the surface treatment has been performed; and changing a crystalline state of at least a partial region of the semiconductor layer by performing a heat treatment on the semiconductor layer on which the dielectric film has been formed.
摘要翻译：一种制造半导体器件的方法，该半导体器件包括沉积在半导体层上的半导体层和电介质层，包括：形成半导体层; 在形成的半导体层的表面上进行表面处理以除去残留的碳化合物; 在对所述表面处理后的表面状态对应的沉积条件下，在已经进行了表面处理的半导体层的表面的至少一部分上形成电介质膜; 以及通过在已经形成有电介质膜的半导体层上进行热处理来改变半导体层的至少一部分区域的结晶状态。

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