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    • 1. 发明授权
    • Multiple port memory apparatus
    • 多端口存储设备
    • US06629215B2
    • 2003-09-30
    • US09811916
    • 2001-03-19
    • Juergen PilleRolf SautterDieter WendelGeorge M. Lattimore
    • Juergen PilleRolf SautterDieter WendelGeorge M. Lattimore
    • G06F1200
    • G06F9/30141G11C7/1006G11C7/1012G11C7/22G11C2207/229Y10S707/99953Y10S707/99954
    • In order to provide an improved wiring management approach, a multiple port memory apparatus (200) is proposed, which comprises a first memory field of a first memory array (201) of at least three memory arrays (201, 202, 203) storing first data, wherein the first memory field is identified by a first address, a first memory field of a second memory array (202) of the at least three memory arrays (201, 202, 203) storing second data, wherein the first memory field of the second memory array (202) is also identified by the first address, and a first memory field of a third memory array (203) of the at least three memory arrays (201, 202, 203) storing select data indicating, whether the first data or the second data, each stored under the first address but in different memory arrays, have been lastly written.
    • 为了提供改进的布线管理方法,提出了一种多端口存储装置(200),其包括至少存储有第一存储器阵列(201,202,203)的第一存储器阵列(201)的第一存储器阵列(201,202,203) 数据,其中第一存储器字段由第一地址识别,存储第二数据的至少三个存储器阵列(201,202,203)的第二存储器阵列(202)的第一存储器字段,其中第一存储器字段 所述第二存储器阵列(202)也由所述第一地址标识,并且所述至少三个存储器阵列(201,202,203)中的第三存储器阵列(203)的第一存储器字段存储选择数据,所述选择数据指示所述第一存储器阵列 最后写入数据或第二数据,每个存储在第一地址但不同的存储器阵列中。
    • 2. 发明授权
    • Read/write alignment scheme for port reduction of multi-port SRAM cells
    • 用于多端口SRAM单元端口缩减的读/写对准方案
    • US06785781B2
    • 2004-08-31
    • US09825072
    • 2001-04-03
    • Jens LeenstraJuergen PilleRolf SautterDieter Wendel
    • Jens LeenstraJuergen PilleRolf SautterDieter Wendel
    • G06F1200
    • G06F9/3814G06F9/3802G11C8/16
    • A considerable amount of area can be saved according to the present invention by reducing the number of input ports and the number of output ports to the number n of concurrently intended array accesses. This remarkable reduction of ports and thus an extraordinary associated area saving can be achieved when some knowledge about array utilization is exploited: The array accesses are to be performed with concurrent accesses from at most k particular groups. A group is defined by a plurality of array accesses which have at most one access to the same port at a time. Then, for reading the read results are aligned according to a simple re-wiring scheme to the respective read requesters, whereas for writing the accesses are aligned prior to the array access according to the same or a similar scheme.
    • 根据本发明,通过将输入端口的数量和输出端口的数量减少到同时预期的阵列访问的数量n,可以节省相当多的面积。 当利用关于阵列利用的一些知识时,可以实现端口的显着减少,从而实现非常相关的区域保存:阵列访问将由最多k个特定组的并发访问执行。 一组由多个阵列访问定义,每次访问至多一次访问同一个端口。 然后,为了读取,读取结果根据简单的重新布线方案对齐到相应的读取请求者,而对于写入,根据相同或相似的方案在阵列访问之前进行对齐。
    • 3. 发明授权
    • Power saving by disabling cyclic bitline precharge
    • 通过禁用循环位线预充电节电
    • US07295481B2
    • 2007-11-13
    • US10711982
    • 2004-10-18
    • Juergen PilleRolf SautterChristian SchweizerKlaus Thumm
    • Juergen PilleRolf SautterChristian SchweizerKlaus Thumm
    • G11C7/00
    • G11C7/12G11C7/22G11C2207/2227
    • A method and system of accessing memory cells within a dynamic hardware memory block operated with a bitline precharge circuit, in which differential read/write access operations are performed by activating complementary bitlines. A reduction in power dissipation is realized by determining whether a next access operation following a current access operation is a read or write access, and performing a precharge of the bitlines of the array only when a read operation follows the current access operation. A conventional precharge control signal is combined with an external control signal indicating if the next cycle is a read cycle. The combination of the two signals can be used, for example, as input to a simple AND gate to generate an effective precharge signal. The effective precharge signal permits precharging of bitlines only when those bitlines are used for read access in a respective next cycle.
    • 一种访问由位线预充电电路操作的动态硬件存储器块内的存储器单元的方法和系统,其中通过激活补充位线执行差分读/写访问操作。 通过确定当前访问操作之后的下一个访问操作是读取还是写入访问,并且仅当读取操作遵循当前访问操作时才执行阵列的位线的预充电来实现功耗的降低。 常规的预充电控制信号与指示下一个周期是否为读周期的外部控制信号组合。 两个信号的组合可以用作例如简单与门的输入以产生有效的预充电信号。 只有当这些位线用于在相应的下一周期中的读取访问时,有效的预充电信号才允许位线预充电。
    • 9. 发明授权
    • Single-ended read and differential write scheme
    • 单端读和差分写入方案
    • US07813163B2
    • 2010-10-12
    • US12190680
    • 2008-08-13
    • Juergen PilleOtto WagnerSebastian EhrenreichRolf Sautter
    • Juergen PilleOtto WagnerSebastian EhrenreichRolf Sautter
    • G11C11/00
    • G11C11/413
    • A method to read and write at least one static memory cell is provided, said cell comprising a cross-coupled inverter pair and two pass-devices wherein said method is characterized in that during read only one of the two pass-devices is selected, while for write both pass-devices are selected. Furthermore, a circuit to read and write at least one static memory cell is described, said cell comprising a cross-coupled inverter pair and two pass-devices. Said circuit is characterized in that for each pass-device of the cell an individual wordline is connected with a gate of the particular pass-device, wherein both wordlines are selected for write and a single wordline is selected for read.
    • 提供了读取和写入至少一个静态存储单元的方法,所述单元包括交叉耦合的反相器对和两个通过器件,其中所述方法的特征在于,在只读选择两个通过器件中的一个的同时, 对于写入,选择了传递设备。 此外,描述了读取和写入至少一个静态存储器单元的电路,所述单元包括交叉耦合的反相器对和两个通过器件。 所述电路的特征在于,对于单元的每个通过器件,单个字线与特定通过器件的栅极连接,其中两个字线被选择用于写入,并且单个字线被选择用于读取。
    • 10. 发明申请
    • Single-ended read and differential write scheme
    • 单端读和差分写入方案
    • US20090059688A1
    • 2009-03-05
    • US12190680
    • 2008-08-13
    • Juergen PilleOtto WagnerSebastian EhrenreichRolf Sautter
    • Juergen PilleOtto WagnerSebastian EhrenreichRolf Sautter
    • G11C7/00G11C8/08
    • G11C11/413
    • A method to read and write at least one static memory cell is provided, said cell comprising a cross-coupled inverter pair and two pass-devices wherein said method is characterized in that during read only one of the two pass-devices is selected, while for write both pass-devices are selected. Furthermore, a circuit to read and write at least one static memory cell is described, said cell comprising a cross-coupled inverter pair and two pass-devices. Said circuit is characterized in that for each pass-device of the cell an individual wordline is connected with a gate of the particular pass-device, wherein both wordlines are selected for write and a single wordline is selected for read.
    • 提供了读取和写入至少一个静态存储单元的方法,所述单元包括交叉耦合的反相器对和两个通过器件,其中所述方法的特征在于,在只读选择两个通过器件中的一个的同时, 对于写入,选择了传递设备。 此外,描述了读取和写入至少一个静态存储器单元的电路,所述单元包括交叉耦合的反相器对和两个通过器件。 所述电路的特征在于,对于单元的每个通过器件,单个字线与特定通过器件的栅极连接,其中两个字线被选择用于写入,并且单个字线被选择用于读取。