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1. 发明申请

US20130039618A1 PATTERNED NON-RECIPROCAL OPTICAL RESONATOR 有权
标题翻译：图形非共振光学谐振器
公开(公告)号：US20130039618A1
公开(公告)日：2013-02-14
申请号：US13208002
申请日：2011-08-11
申请人： Lionel C. Kimerling , Caroline A. Ross , Lei Bi , Peng Jiang , Juejun Hu , Dong Hun Kim , Gerald F. Dionne
发明人： Lionel C. Kimerling , Caroline A. Ross , Lei Bi , Peng Jiang , Juejun Hu , Dong Hun Kim , Gerald F. Dionne
IPC分类号： G02B6/42 , B05D5/12
CPC分类号： G02F1/0955 , G02B6/12004 , G02B6/12007 , G02F1/095 , G02F1/3132 , G02F1/361 , G02F1/3611 , G02F2203/15 , H01F41/14
摘要： A patterned nonreciprocal optical resonator structure is provided that includes a resonator structure that receives an optical signal. A top cladding layer is deposited on a selective portion of the resonator structure. The top cladding layer is patterned so as to expose the core of the resonator structure defined by the selective portion. A magneto-optically active layer includes a magneto-optical medium being deposited on the exposed core of the resonator structure so as to generate optical non-reciprocity.
摘要翻译：提供了一种图案化的非可逆光学谐振器结构，其包括接收光信号的谐振器结构。上覆层沉积在谐振器结构的选择部分上。图案化顶部覆层以便露出由选择部分限定的谐振器结构的芯。磁光学层包括沉积在谐振器结构的暴露的磁芯上的磁光介质，以产生光学非互易性。

2. 发明授权

US08837877B2 Patterned non-reciprocal optical resonator 有权
标题翻译：图案非互易光学谐振器
公开(公告)号：US08837877B2
公开(公告)日：2014-09-16
申请号：US13208002
申请日：2011-08-11
申请人： Lionel C. Kimerling , Caroline A. Ross , Lei Bi , Peng Jiang , Juejun Hu , Dong Hun Kim , Gerald F. Dionne
发明人： Lionel C. Kimerling , Caroline A. Ross , Lei Bi , Peng Jiang , Juejun Hu , Dong Hun Kim , Gerald F. Dionne
IPC分类号： G02B6/28 , G02B6/26 , G02B6/27 , G02F1/00 , H01F41/14 , G02F1/313 , G02F1/095 , G02F1/361 , G02B6/12
CPC分类号： G02F1/0955 , G02B6/12004 , G02B6/12007 , G02F1/095 , G02F1/3132 , G02F1/361 , G02F1/3611 , G02F2203/15 , H01F41/14
摘要： A patterned nonreciprocal optical resonator structure is provided that includes a resonator structure that receives an optical signal. A top cladding layer is deposited on a selective portion of the resonator structure. The top cladding layer is patterned so as to expose the core of the resonator structure defined by the selective portion. A magneto-optically active layer includes a magneto-optical medium being deposited on the exposed core of the resonator structure so as to generate optical non-reciprocity.
摘要翻译：提供了一种图案化的非可逆光学谐振器结构，其包括接收光信号的谐振器结构。上覆层沉积在谐振器结构的选择部分上。图案化顶部覆层以便露出由选择部分限定的谐振器结构的芯。磁光学有源层包括沉积在谐振器结构的暴露的磁芯上的磁光介质，以便产生光学非互易性。

3. 发明申请

US20100238536A1 INTEGRATED SILICON/SILICON-GERMANIUM MAGNETO-OPTIC ISOLATOR 审中-公开
标题翻译：集成硅/硅 - 锗磁光隔离器
公开(公告)号：US20100238536A1
公开(公告)日：2010-09-23
申请号：US12406313
申请日：2009-03-18
申请人： Juejun Hu , Lei Bi , Lionel C. Kimerling , Gerald F. Dionne , Caroline A. Ross
发明人： Juejun Hu , Lei Bi , Lionel C. Kimerling , Gerald F. Dionne , Caroline A. Ross
IPC分类号： G02F1/09 , H01L21/00 , G02B6/42
CPC分类号： G02B6/12007 , G02B2006/12061 , G02B2006/12157 , G02F1/0955 , G02F1/3133 , G02F2201/063 , G02F2202/36 , G02F2203/15
摘要： A magneto-optical isolator device is provided. The isolator device includes a substrate and a bottom cladding layer that is formed on the substrate. An optical resonator structure is formed on the bottom cladding layer. The resonator structure includes crystalline or amorphous diamagnetic silicon or silicon-germanium so as to provide non-reciprocal optical isolation. A top cladding layer is formed on the resonator structure. One or more magnetic layers positioned on the top cladding layer or between the top cladding or bottom cladding layers and the optical resonator structure.
摘要翻译：提供了一种磁光隔离器装置。隔离器装置包括衬底和形成在衬底上的底部包层。在下包层上形成光谐振器结构。谐振器结构包括晶体或无定形反磁性硅或硅 - 锗，以提供不可逆的光学隔离。在谐振器结构上形成顶层。位于顶部包层或顶部包层或底部包层之间的一个或多个磁性层和光学谐振器结构。

4. 发明申请

US20090136191A1 MAGNETIC MATERIAL FOR MAGNETO-OPTICAL ISOLATOR 有权
标题翻译：磁光隔离器用磁性材料
公开(公告)号：US20090136191A1
公开(公告)日：2009-05-28
申请号：US12262739
申请日：2008-10-31
申请人： Lei Bi , Gerald F. Dionne , Hyun Suk Kim , Caroline A. Ross
发明人： Lei Bi , Gerald F. Dionne , Hyun Suk Kim , Caroline A. Ross
IPC分类号： G02B6/036 , G02B6/10
CPC分类号： G02F1/0955 , G02F1/0036 , G02F2001/212 , H01F10/1933
摘要： A magneto-optical structure is provided. The magneto-optical structure includes a substrate. A waveguide layer is formed on the substrate for guiding electromagnetic radiation received by the magneto-optical structure. The waveguide layer includes magnetic oxide material that comprises ABO3 perovskite doped with transition metal ions on the B site, or transition metal ions doped SnO2, or transition metal ions doped CeO2.
摘要翻译：提供磁光结构。磁光结构包括基板。在衬底上形成用于引导由磁光结构接收的电磁辐射的波导层。波导层包括包含在B位上掺杂过渡金属离子的ABO 3钙钛矿或掺杂过渡金属离子的掺杂CeO 2的过渡金属离子的磁性氧化物材料。

5. 发明授权

US07995893B2 Magnetic material for magneto-optical isolator 有权
标题翻译：用于磁光隔离器的磁性材料
公开(公告)号：US07995893B2
公开(公告)日：2011-08-09
申请号：US12262739
申请日：2008-10-31
申请人： Lei Bi , Gerald F. Dionne , Hyun Suk Kim , Caroline A. Ross
发明人： Lei Bi , Gerald F. Dionne , Hyun Suk Kim , Caroline A. Ross
IPC分类号： G02B6/12 , G02B6/10 , G02B6/00 , H01L21/00
CPC分类号： G02F1/0955 , G02F1/0036 , G02F2001/212 , H01F10/1933
摘要： A magneto-optical structure is provided. The magneto-optical structure includes a substrate. A waveguide layer is formed on the substrate for guiding electromagnetic radiation received by the magneto-optical structure. The waveguide layer includes magnetic oxide material that comprises ABO3 perovskite doped with transition metal ions on the B site, or transition metal ions doped SnO2, or transition metal ions doped CeO2.
摘要翻译：提供磁光结构。磁光结构包括基板。在衬底上形成用于引导由磁光结构接收的电磁辐射的波导层。波导层包括包含在B位上掺杂过渡金属离子的ABO 3钙钛矿或掺杂过渡金属离子的掺杂CeO 2的过渡金属离子的磁性氧化物材料。

6. 发明授权

US08797784B2 Filamentary memory devices and methods 有权
标题翻译：遗迹记忆装置和方法
公开(公告)号：US08797784B2
公开(公告)日：2014-08-05
申请号：US13491116
申请日：2012-06-07
申请人： Lei Bi , Beth R. Cook , Marko Milojevic , Durai Vishak Nirmal Ramaswamy
发明人： Lei Bi , Beth R. Cook , Marko Milojevic , Durai Vishak Nirmal Ramaswamy
IPC分类号： G11C11/00 , G11C13/00
CPC分类号： H01L45/08 , G11C13/0002 , G11C13/0007 , G11C13/0035 , G11C13/004 , G11C13/0069 , G11C2013/0073 , G11C2013/0083 , G11C2213/35 , H01L27/2463 , H01L45/145
摘要： Apparatus, devices, systems, and methods are described that include filamentary memory cells. Mechanisms to substantially remove the filaments in the devices are described, so that the logical state of a memory cell that includes the that includes the removable filament can be detected. Additional apparatus, systems, and methods are described.
摘要翻译：描述了包括丝状记忆单元的装置，装置，系统和方法。描述了基本上去除装置中的长丝的机构，使得可以检测到包括可去除细丝的存储单元的逻辑状态。描述了附加装置，系统和方法。

7. 发明申请

US20140111127A1 Sensorless Dynamic Driving Method and System for Single Phase Alternating Current Permanent Magnet Motor 有权
标题翻译：用于单相交流永磁电动机的无传感器动态驱动方法和系统
公开(公告)号：US20140111127A1
公开(公告)日：2014-04-24
申请号：US14138983
申请日：2013-12-23
申请人： Lei Bi
发明人： Lei Bi
IPC分类号： H02P6/20
CPC分类号： H02P6/20 , H02P6/182 , H02P6/26
摘要： A sensorless driving method for a single phase alternating current permanent magnet motor is described. The method comprises a starting drive mode and a stable drive mode. The starting drive mode comprises inputting a first current to drive a rotor to rotate to a stable position, the first current comprising a pulse current flowing in a first direction for a first predetermined starting time interval and a constant current flowing in a second direction contrary to the first direction for a second predetermined time interval, terminating the first current, determining generation of a back electromotive force, detecting a first zero crossing point of the back electromotive force, inputting a second current for a first charge time interval, waiting for a first post-charge time interval, detecting a second zero crossing point to define a previous half period between the first zero crossing point and the second crossing point, inputting the second current for a second charge time interval, waiting for a second post-charge time interval, and detecting speed of the rotor to compare the speed to a predetermined value. The second current flows in a direction in which the back electromotive force is generated.
摘要翻译：描述了用于单相交流永磁电动机的无传感器驱动方法。该方法包括启动驱动模式和稳定驱动模式。启动驱动模式包括输入第一电流以驱动转子旋转到稳定位置，第一电流包括沿第一方向流动第一预定起始时间间隔的脉冲电流和与第二方向相反的恒定电流第一预定时间间隔的第一方向，终止第一电流，确定反电动势的产生，检测反电动势的第一过零点，在第一充电时间间隔内输入第二电流，等待第一电流检测第二过零点以定义第一过零点与第二交叉点之间的前一半周期，输入第二电流为第二充电时间间隔，等待第二充电时间间隔并且检测转子的速度以将速度与预定值进行比较。第二电流在产生反电动势的方向上流动。

8. 发明申请

US20140061568A1 RESISTIVE MEMORY DEVICES 有权
标题翻译：电阻式存储器件
公开(公告)号：US20140061568A1
公开(公告)日：2014-03-06
申请号：US13599865
申请日：2012-08-30
申请人： Durai Vishak Nirmal Ramaswamy , Lei Bi , Beth R. Cook , Dale W. Collins
发明人： Durai Vishak Nirmal Ramaswamy , Lei Bi , Beth R. Cook , Dale W. Collins
IPC分类号： H01L21/02 , H01L47/00
CPC分类号： H01L45/1233 , G11C13/0007 , G11C13/0069 , G11C13/0097 , G11C2213/12 , G11C2213/51 , G11C2213/55 , H01L21/02414 , H01L21/02483 , H01L27/24 , H01L27/2427 , H01L27/2481 , H01L45/04 , H01L45/08 , H01L45/12 , H01L45/1246 , H01L45/1253 , H01L45/145 , H01L45/146 , H01L45/147 , H01L45/1616
摘要： Electronic apparatus, systems, and methods can include a resistive memory cell having a structured as an operably variable resistance region between two electrodes and a metallic barrier disposed in a region between the dielectric and one of the two electrodes. The metallic barrier can have a structure and a material composition to provide oxygen diffusivity above a first threshold during program or erase operations of the resistive memory cell and oxygen diffusivity below a second threshold during a retention state of the resistive memory cell. Additional apparatus, systems, and methods are disclosed.
摘要翻译：电子设备，系统和方法可以包括具有被构造为在两个电极之间的可操作变化的电阻区域的电阻性存储单元和设置在电介质和两个电极中的一个之间的区域中的金属屏障。金属屏障可以具有结构和材料组成，以在阻性存储器单元的保持状态期间在电阻存储器单元的编程或擦除操作期间提供高于第一阈值的氧扩散系数和低于第二阈值的氧扩散系数。公开了附加装置，系统和方法。

9. 发明申请

US20090070394A1 CANONICAL SIGNED DIGIT MULTIPLIER 有权
标题翻译：经典签名数字乘法器
公开(公告)号：US20090070394A1
公开(公告)日：2009-03-12
申请号：US11910454
申请日：2006-03-23
申请人： Tianyan Pu , Lei Bi
发明人： Tianyan Pu , Lei Bi
IPC分类号： G06F7/00
CPC分类号： G06F7/5332
摘要： A multiplier is able to multiply an input data value by a selected constant value in CSD form. The selected constant value has a plurality of pairs of bits, and the multiplier includes multiplexers, each controlled by a respective pair of bits of the selected constant value. Each of the multiplexers has a plurality of inputs, and is connected to receive the input data value, the inverse of the input data value, and all zeros on said inputs, and it is controlled such that it outputs either the input data value, the inverse of the input data value, or all zeros, depending on the values of the respective pair of bits of the selected constant value. Variable shift blocks are each connected to receive an input from a respective one of said multiplexers, and are each adapted to shift their received input by a first bit shift value or a second bit shift value, depending on the values of the respective pair of bits of the selected constant value, wherein the first bit shift value and the second bit shift value differ by 1. The multiplier also includes combination circuitry, for receiving the outputs from the plurality of shift blocks, and for combining the outputs from the plurality of shift blocks and applying further bit shifts, to form an output value equal to the result of multiplying the input data value by the selected constant value.
摘要翻译：乘数能够以CSD形式将输入数据值乘以选定的常数值。所选择的常数值具有多个位对，并且乘法器包括多路复用器，每个由多个选择的常数值的相应位组控制。每个多路复用器具有多个输入，并且被连接以接收输入数据值，输入数据值的倒数和所述输入上的全零，并且它被控制成使得其输出输入数据值，取决于所选常数值的相应位对的值，输入数据值的倒数或全零。可变移位块各自被连接以接收来自所述多路复用器中的相应一个的输入，并且各自适于根据相应的位对的值将其接收到的输入移位第一位移位值或第二位移位值其中所述第一位移位值和所述第二位移位值相差1.所述乘法器还包括组合电路，用于接收来自所述多个移位块的输出，并且用于组合来自所述多个移位的输出块并且进一步进行位移，以形成等于将输入数据值乘以选定常数值的结果的输出值。

10. 发明申请

US20140056053A1 UNIPOLAR MEMORY DEVICES 有权
公开(公告)号：US20140056053A1
公开(公告)日：2014-02-27
申请号：US13590758
申请日：2012-08-21
申请人： Durai Vishak Nirmal Ramaswamy , Lei Bi
发明人： Durai Vishak Nirmal Ramaswamy , Lei Bi
IPC分类号： G11C11/00 , H01L21/8239 , H01L45/00
CPC分类号： G11C13/0002 , G11C13/0007 , H01L45/08 , H01L45/12 , H01L45/1233 , H01L45/146
摘要： Electronic apparatus, systems, and methods can include a resistive memory cell having a dielectric structured as an operably variable resistance region between an oxygen source and an oxygen sink. The dielectric, oxygen source, and an oxygen sink can be structured as a field driven unipolar memory element with respect to generation and healing of a filament in the dielectric. Additional apparatus, systems, and methods are disclosed.
摘要翻译：电子设备，系统和方法可以包括电阻存储单元，其具有被构造为在氧源和氧吸收器之间的可操作变化的电阻区域的电介质。相对于电介质中的细丝的产生和愈合，电介质，氧源和氧吸收器可以被构造为场驱动的单极存储元件。公开了附加装置，系统和方法。

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