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1. 发明授权

US08841211B2 Methods for forming interconnect structures 有权
标题翻译：形成互连结构的方法
公开(公告)号：US08841211B2
公开(公告)日：2014-09-23
申请号：US13153992
申请日：2011-06-06
申请人： Joung Joo Lee , Xianmin Tang , Tza-Jing Gung
发明人： Joung Joo Lee , Xianmin Tang , Tza-Jing Gung
IPC分类号： H01L21/4763 , H01L21/285 , C23C14/34 , H01L21/768 , C23C14/04
CPC分类号： H01L21/2855 , C23C14/046 , C23C14/345 , C23C14/3492 , H01L21/76882
摘要： Methods for forming interconnect structures are provided herein. In some embodiments, a method for forming an interconnect on a substrate may include depositing a material atop an upper surface of the substrate and atop one or more surfaces of a feature disposed in the substrate by a first deposition process that deposits the material at a faster rate on the upper surface than on a bottom surface of the feature; depositing the material atop the upper surface of the substrate and atop one or more surfaces of the feature by a second deposition process that deposits the material at a greater rate on the bottom surface of the feature than on the upper surface of the substrate; and heating the deposited material to draw the deposited material towards the bottom surface of the feature to at least partially fill the feature with the deposited material.
摘要翻译：本文提供形成互连结构的方法。在一些实施例中，用于在衬底上形成互连的方法可以包括在衬底的上表面顶部沉积材料，并且通过第一沉积工艺沉积位于衬底中的特征的一个或多个表面上，所述第一沉积工艺以更快的速度沉积材料在上表面上比在特征的底表面上的速率; 通过第二沉积工艺将所述材料沉积在所述基底的上表面顶部和所述特征的一个或多个表面上方，所述第二沉积工艺在所述特征的底表面上以比在所述基底的上表面上更大的速率沉积材料; 以及加热沉积的材料以将沉积的材料拉向特征的底表面，以至少部分地用沉积的材料填充该特征。

2. 发明申请

US20100252416A1 Sputtering Target for PVD Chamber 有权
标题翻译： PVD室的溅射靶
公开(公告)号：US20100252416A1
公开(公告)日：2010-10-07
申请号：US12723199
申请日：2010-03-12
申请人： Zhendong Liu , Rongjun Wang , Xianmin Tang , Srinivas Gandikota , Tza-Jing Gung , Muhammad M. Rasheed
发明人： Zhendong Liu , Rongjun Wang , Xianmin Tang , Srinivas Gandikota , Tza-Jing Gung , Muhammad M. Rasheed
IPC分类号： C23C14/34
CPC分类号： C23C14/3407 , H01J37/342 , H01J37/3423
摘要： Target assemblies and PVD chambers including target assemblies are disclosed. The target assembly includes a target that has a concave shaped target. When used in a PVD chamber, the concave target provides more radially uniform deposition on a substrate disposed in the sputtering chamber.
摘要翻译：公开了包括目标组件的目标组件和PVD室。目标组件包括具有凹形目标的目标。当在PVD室中使用时，凹目标在设置在溅射室中的基板上提供更径向均匀的沉积。

3. 发明申请

US20120181166A1 PVD PROCESS WITH SYNCHRONIZED PROCESS PARAMETERS AND MAGNET POSITION 审中-公开
标题翻译：具有同步工艺参数和磁体位置的PVD工艺
公开(公告)号：US20120181166A1
公开(公告)日：2012-07-19
申请号：US13007228
申请日：2011-01-14
申请人： QIAN LUO , Ye Xu , Tza-Jing Gung , Xianmin Tang
发明人： QIAN LUO , Ye Xu , Tza-Jing Gung , Xianmin Tang
IPC分类号： C23C14/35
CPC分类号： C23C14/345 , C23C14/3492 , C23C14/35 , H01J37/3455
摘要： Embodiments of the present invention generally relate to methods for physical vapor deposition processes. The methods generally include synchronizing process chamber conditions with the position of a magnetron. As the magnetron is scanned over a first area of a target, the conditions within the chamber are adjusted to a first set of predetermined process conditions. As the magnetron is subsequently scanned over a second area of the target, the conditions within the chamber are adjusted to a second set of predetermined process conditions different the first set. The target may be divided into more than two areas. By correlating the position of the magnetron with different sets of process conditions, film uniformity can be improved by reducing center-to-edge non-uniformities, such as re-sputter rates which may be higher when the magnetron is near the edge of the target.
摘要翻译：本发明的实施方案一般涉及物理气相沉积方法的方法。方法通常包括使处理室条件与磁控管的位置同步。当磁控管在目标的第一区域上被扫描时，腔室内的条件被调整到第一组预定的工艺条件。随着磁控管随后在目标的第二区域上扫描，腔室内的条件被调整到与第一组不同的第二组预定过程条件。目标可分为两个以上的区域。通过将磁控管的位置与不同的工艺条件相关联，可以通过减小中心到边缘的不均匀性来改善膜均匀性，例如当磁控管靠近靶的边缘时可能更高的再溅射速率。

4. 发明申请

US20100032289A1 METHOD FOR ULTRA-UNIFORM SPUTTER DEPOSITION USING SIMULTANEOUS RF AND DC POWER ON TARGET 有权
标题翻译：使用同步射频和直流电源对目标进行超均匀溅射沉积的方法
公开(公告)号：US20100032289A1
公开(公告)日：2010-02-11
申请号：US12188937
申请日：2008-08-08
申请人： RONGJUN WANG , Xianmin Tang , Zhendong Liu , Tza-Jing Gung , Maurice E. Ewert
发明人： RONGJUN WANG , Xianmin Tang , Zhendong Liu , Tza-Jing Gung , Maurice E. Ewert
IPC分类号： C23C14/00
CPC分类号： C23C14/54 , C23C14/3492 , C23C14/35 , C23C14/542 , H01J37/32027 , H01J37/32091 , H01J37/34 , H01J37/347 , H01L21/02266
摘要： In a plasma-enhanced physical vapor deposition reactor, uniformity of radial distribution of the deposition rate across the workpiece is enhanced by applying both RF and D.C. power to the target and adjusting the power levels of the RF and D.C. power independently. Further optimization is obtained by adjusting the height of the magnet above the target, adjusting the radius of the orbital motion of the magnet above the target and providing an angle edge surface of the target.
摘要翻译：在等离子体增强的物理气相沉积反应器中，通过将RF和DCC功率施加到目标并且独立地调节RF和DC电源的功率电平来增强穿过工件的沉积速率的径向分布的均匀性。通过调整磁体在目标上方的高度，调整磁体在目标上方的轨道运动的半径，并提供目标的角度边缘表面，可获得进一步优化。

5. 发明授权

US08580094B2 Magnetron design for RF/DC physical vapor deposition 有权
标题翻译：用于RF / DC物理气相沉积的磁控管设计
公开(公告)号：US08580094B2
公开(公告)日：2013-11-12
申请号：US13163817
申请日：2011-06-20
申请人： Rongjun Wang , Sally Lou , Muhammad Rasheed , Jianxin Lei , Xianmin Tang , Srinivas Gandikota , Ryan Hanson , Tza-Jing Gung , Keith A. Miller , Thanh X. Nguyen
发明人： Rongjun Wang , Sally Lou , Muhammad Rasheed , Jianxin Lei , Xianmin Tang , Srinivas Gandikota , Ryan Hanson , Tza-Jing Gung , Keith A. Miller , Thanh X. Nguyen
IPC分类号： C23C14/35
CPC分类号： C23C14/35 , H01J37/3408 , H01J37/345 , H01J37/3461
摘要： Methods and apparatus to improve target life and deposition uniformity in PVD chambers are provided herein. In some embodiments, a magnetron assembly includes a shunt plate having a central axis, the shunt plate rotatable about the central axis, a first open loop magnetic pole arc coupled to the shunt plate at a first radius from the central axis, and a second open loop magnetic pole arc coupled the shunt plate at a first distance from the first open loop magnetic pole arc, wherein at least one of the first radius varies along the first open loop magnetic pole arc or the first distance varies along the second open loop magnetic pole arc. In some embodiments, a first polarity of the first open loop magnetic pole arc opposes a second polarity of the second open loop magnetic pole arc.
摘要翻译：本文提供了改善PVD室中的目标寿命和沉积均匀性的方法和装置。在一些实施例中，磁控管组件包括具有中心轴线的分流板，分流板可围绕中心轴线旋转，第一开环磁极电弧在与中心轴线成第一半径处耦合到分流板，第二开路环形磁极以与第一开环磁极弧成第一距离的方式将分流板电弧耦合，其中第一半径中的至少一个沿第一开环磁极弧变化，或者第一距离沿第二开环磁极变化弧。在一些实施例中，第一开环磁极的第一极性与第二开环磁极的第二极性相反。

6. 发明授权

US08557094B2 Sputtering chamber having auxiliary backside magnet to improve etch uniformity and magnetron producing sustained self sputtering of ruthenium and tantalum 失效
标题翻译：具有辅助背面磁体的溅射室以提高蚀刻均匀性，并产生磁控管，从而产生钌和钽的持续自溅射
公开(公告)号：US08557094B2
公开(公告)日：2013-10-15
申请号：US11689720
申请日：2007-03-22
申请人： Xianmin Tang , Hua Chung , Rongjun Wang , Tza-Jing Gung , Praburam Gopalraja , Jick Yu , Hong Yang
发明人： Xianmin Tang , Hua Chung , Rongjun Wang , Tza-Jing Gung , Praburam Gopalraja , Jick Yu , Hong Yang
IPC分类号： C23C14/34
CPC分类号： C23C14/0641 , C23C14/345 , C23C14/35 , H01J37/3408 , H01J37/3455
摘要： A plasma sputter chamber and process for sputtering ruthenium and tantalum at low pressure or with self-sustained sputtering (SSS). The source magnetron is strongly unbalanced and of sufficient size to project the unbalanced magnetic field toward the wafer to increase the ionization probability. Sputter etch uniformity is increased by the use of an auxiliary magnet system rotating with the source magnetron but placed towards the center of rotation. It may be a larger, nearly balanced auxiliary magnetron with an outer polarity matching that of the source magnetron or an array of magnets of that polarity. An integrated process includes a directional deposition of the refractory metal and its nitride, a sputter etch, and a flash deposition.
摘要翻译：一种等离子体溅射室和用于在低压或自持溅射（SSS）下溅射钌和钽的工艺。源极磁控管是非常不平衡的，并且具有足够的尺寸以将不平衡磁场投射到晶片以增加电离概率。通过使用与源磁控管一起旋转但是朝向旋转中心放置的辅助磁体系统来增加溅射蚀刻均匀性。它可以是较大的，几乎平衡的辅助磁控管，其外极性与源极磁控管或该极性的磁体阵列的极性匹配。集成工艺包括难熔金属及其氮化物的定向沉积，溅射蚀刻和闪蒸沉积。

7. 发明授权

US07569125B2 Shields usable with an inductively coupled plasma reactor 有权
标题翻译：可用于电感耦合等离子体反应器的屏蔽
公开(公告)号：US07569125B2
公开(公告)日：2009-08-04
申请号：US11124524
申请日：2005-05-05
申请人： Tza-Jing Gung , Xianmin Tang , John Forster , Peijun Ding , Marc Schweitzer , Keith A. Miller , Ilya Lavitsky
发明人： Tza-Jing Gung , Xianmin Tang , John Forster , Peijun Ding , Marc Schweitzer , Keith A. Miller , Ilya Lavitsky
IPC分类号： C23C14/35
CPC分类号： H01J37/3402 , C23C14/046 , C23C14/345 , C23C14/3457 , C23C14/358 , H01J37/321 , H01J37/32623 , H01J37/3408 , H01J37/3411 , H01J37/3441 , H01J2237/3327 , H01L21/2855 , H01L21/76843 , H01L21/76877
摘要： A one-piece inner shield usable in a plasma sputter reactor and extending from the target to the pedestal with a smooth inner surface and supported by an annular flange in a middle portion of the shield. The shield may be used to support the RF coil used in exciting the plasma. An outer shield includes an outwardly extending flange on its end alignable with the inner shield flange, holes in correspondence to recesses in the inner shield for standoffs for the RF coil, and circumferentially arranged gas flow holes.
摘要翻译：可用于等离子体溅射反应器的一体式内屏蔽件，并且从目标件延伸到具有光滑内表面的基座并由屏蔽件的中间部分中的环形凸缘支撑。屏蔽可用于支持用于激发等离子体的RF线圈。外屏蔽件包括在其与内屏蔽凸缘对准的端部上的向外延伸的凸缘，对应于用于RF线圈的支架的内屏蔽件中的凹部的孔和周向布置的气体流动孔。

8. 发明授权

US07041201B2 Sidewall magnet improving uniformity of inductively coupled plasma and shields used therewith 有权
标题翻译：侧壁磁体改善了与其一起使用的电感耦合等离子体和屏蔽层的均匀性
公开(公告)号：US07041201B2
公开(公告)日：2006-05-09
申请号：US10608306
申请日：2003-06-26
申请人： Tza-Jing Gung , Xianmin Tang , John Forster , Peijun Ding , Marc Schweitzer , Keith A. Miller , Ilya Lavitsky
发明人： Tza-Jing Gung , Xianmin Tang , John Forster , Peijun Ding , Marc Schweitzer , Keith A. Miller , Ilya Lavitsky
IPC分类号： C23C14/35
CPC分类号： H01J37/3402 , C23C14/046 , C23C14/345 , C23C14/3457 , C23C14/358 , H01J37/321 , H01J37/32623 , H01J37/3408 , H01J37/3411 , H01J37/3441 , H01J2237/3327 , H01L21/2855 , H01L21/76843 , H01L21/76877
摘要： One aspect of the invention includes an auxiliary magnet ring positioned outside of the chamber wall of a plasma sputter reactor and being disposed at least partially radially outwardly of an RF coil used to inductively generate a plasma, particularly for sputter etching the substrate being sputter deposited. Thereby, a magnetic barrier prevents the plasma from leaking outwardly to the coil and improves the uniformity of sputter etching. The magnetic field also acts as a magnetron when the coil, when made of the same material as the primary target, is being used as a secondary target. Another aspect of the invention includes a one-piece inner shield extending from the target to the pedestal with a smooth inner surface and supported by an annular flange in a middle portion of the shield. The shield may be used to support the RF coil.
摘要翻译：本发明的一个方面包括位于等离子体溅射反应器的室壁外部的辅助磁环，并且至少部分地设置在用于感应地产生等离子体的RF线圈的径向外侧，特别是用于溅射蚀刻被溅射沉积的衬底。因此，磁屏障防止等离子体向外泄漏到线圈并提高溅射蚀刻的均匀性。当线圈由与主要靶材相同的材料制成时，磁场也用作磁控管，作为次级靶。本发明的另一方面包括从目标件延伸到具有光滑的内表面并由屏蔽件的中间部分中的环形凸缘支撑的一体式内屏蔽件。屏蔽可用于支持RF线圈。

9. 发明申请

US20050199491A1 Shields usable with an inductively coupled plasma reactor 有权
标题翻译：可用于电感耦合等离子体反应器的屏蔽
公开(公告)号：US20050199491A1
公开(公告)日：2005-09-15
申请号：US11124524
申请日：2005-05-05
申请人： Tza-Jing Gung , Xianmin Tang , John Forster , Peijun Ding , Marc Schweitzer , Keith Miller , Ilya Lavitsky
发明人： Tza-Jing Gung , Xianmin Tang , John Forster , Peijun Ding , Marc Schweitzer , Keith Miller , Ilya Lavitsky
IPC分类号： H05H1/46 , C23C14/04 , C23C14/34 , C23C14/35 , H01J37/32 , H01J37/34 , H01L21/285 , H01L21/768
CPC分类号： H01J37/3402 , C23C14/046 , C23C14/345 , C23C14/3457 , C23C14/358 , H01J37/321 , H01J37/32623 , H01J37/3408 , H01J37/3411 , H01J37/3441 , H01J2237/3327 , H01L21/2855 , H01L21/76843 , H01L21/76877
摘要： A one-piece inner shield usable in a plasma sputter reactor and extending from the target to the pedestal with a smooth inner surface and supported by an annular flange in a middle portion of the shield. The shield may be used to support the RF coil used in exciting the plasma. An outer shield includes an outwardly extending flange on its end alignable with the inner shield flange, holes in correspondence to recesses in the inner shield for standoffs for the RF coil, and circumferentially arranged gas flow holes.
摘要翻译：可用于等离子体溅射反应器的一体式内屏蔽件，并且从目标件延伸到具有光滑内表面的基座并由屏蔽件的中间部分中的环形凸缘支撑。屏蔽可用于支持用于激发等离子体的RF线圈。外屏蔽件包括在其与内屏蔽凸缘对准的端部上的向外延伸的凸缘，对应于用于RF线圈的支架的内屏蔽件中的凹部的孔和周向布置的气体流动孔。

10. 发明授权

US09752228B2 Sputtering target for PVD chamber 有权
公开(公告)号：US09752228B2
公开(公告)日：2017-09-05
申请号：US12723199
申请日：2010-03-12
申请人： Zhendong Liu , Rongjun Wang , Xianmin Tang , Srinivas Gandikota , Tza-Jing Gung , Muhammad M. Rasheed
发明人： Zhendong Liu , Rongjun Wang , Xianmin Tang , Srinivas Gandikota , Tza-Jing Gung , Muhammad M. Rasheed
IPC分类号： C23C14/34 , H01J37/34
CPC分类号： C23C14/3407 , H01J37/342 , H01J37/3423
摘要： Target assemblies and PVD chambers including target assemblies are disclosed. The target assembly includes a target that has a concave shaped target. When used in a PVD chamber, the concave target provides more radially uniform deposition on a substrate disposed in the sputtering chamber.

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