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1. 发明授权

US09274072B2 Method for determining interstitial oxygen concentration 有权
标题翻译：确定间质氧浓度的方法
公开(公告)号：US09274072B2
公开(公告)日：2016-03-01
申请号：US14111974
申请日：2012-04-13
申请人： Jordi Veirman , Sebastien Dubois , Nicolas Enjalbert
发明人： Jordi Veirman , Sebastien Dubois , Nicolas Enjalbert
IPC分类号： G01N27/04 , H01L21/66 , G01J3/42 , G01N27/12 , H01L21/322
CPC分类号： G01N27/041 , G01J3/42 , G01N27/125 , H01L21/3225 , H01L22/12
摘要： A method for determining the interstitial oxygen concentration of a sample made from a p-doped semiconductor material includes a step of heat treatment of the sample in order to form thermal donors, determining the duration of the heat treatment required to obtain a compensated semiconductor material, determining the thermal donors concentration in the sample of compensated semiconductor material, from the charge carriers concentration, and determining the oxygen concentration from the thermal donors of and the duration of the heat treatment.
摘要翻译：用于确定由p掺杂半导体材料制成的样品的间隙氧浓度的方法包括热处理样品以形成热供体的步骤，确定获得补偿的半导体材料所需的热处理的持续时间，从载流子浓度确定补偿半导体材料的样品中的供体浓度，以及确定来自热供体的氧浓度和热处理的持续时间。

2. 发明申请

US20140167731A1 DETERMINING THE DOPANT CONTENT OF A COMPENSATED SILICON SAMPLE 审中-公开
标题翻译：确定补偿性硅样品的含量
公开(公告)号：US20140167731A1
公开(公告)日：2014-06-19
申请号：US14235327
申请日：2012-07-20
申请人： Sebastien Dubois , Nicolas Enjalbert , Jordi Veirman
发明人： Sebastien Dubois , Nicolas Enjalbert , Jordi Veirman
IPC分类号： G01N27/20
CPC分类号： G01N27/20 , C30B29/06 , C30B33/00 , G01N27/041
摘要： Method for determining dopant impurities concentrations in a silicon sample involves provision of a silicon ingot including donor type dopant impurities and acceptor type dopant impurities, a step for determining the position of a first area of the ingot in which a transition takes place between a first conductivity and a second opposite conductivity types, by subjecting ingot portions to chemical treatment based on hydrofluoric acid, nitric acid and acetic acid, enabling defects to be revealed on one of the portions corresponding to the transition between the first conductivity and the second conductivity types, a step of measuring the concentration of free charge carriers in a second area of the ingot, different from the first area, and a step for determining concentrations of dopant impurities in the sample from the position of the first area and the concentration of free charge carriers in the second area of the ingot.
摘要翻译：用于确定硅样品中的掺杂剂杂质浓度的方法包括提供包括施主型掺杂剂杂质和受主型掺杂剂杂质的硅锭，确定锭的第一区域的位置的步骤，其中在第一区域之间发生第一导电性和第二相反的导电类型，通过使锭部分基于氢氟酸，硝酸和乙酸进行化学处理，使得能够在与第一导电性和第二导电类型之间的过渡相对应的部分之一上露出缺陷，测量不同于第一区域的锭的第二区域中的游离载流子的浓度的步骤，以及从第一区域的位置和自由载流子浓度确定样品中掺杂剂杂质浓度的步骤晶锭的第二个区域。

3. 发明授权

US08571812B2 Method for mapping oxygen concentration 有权
标题翻译：氧浓度测定方法
公开(公告)号：US08571812B2
公开(公告)日：2013-10-29
申请号：US13818744
申请日：2011-08-30
申请人： Jordi Veirman , Sebastien Dubois , Nicolas Enjalbert
发明人： Jordi Veirman , Sebastien Dubois , Nicolas Enjalbert
IPC分类号： G01N25/00 , G06F19/00 , G06F17/40
CPC分类号： G01N27/041 , G06F17/11
摘要： A method for determining the oxygen concentration of a sample made of a semiconductor material includes a heat treatment step of the sample to form thermal donors, the measurement of the resistivity in an area of the sample, the determination of the thermal donor concentration from a relation expressing the charge carrier mobility according to an ionized dopant impurity concentration, by adding to the dopant impurity concentration four times the thermal donor concentration, and from the measured resistivity value. The method finally includes determining the oxygen concentration from the thermal donor concentration.
摘要翻译：用于确定由半导体材料制成的样品的氧浓度的方法包括样品的热处理步骤以形成热供体，测量样品区域中的电阻率，从关系中确定供体的供体浓度根据电离掺杂剂杂质浓度，通过加入掺杂剂杂质浓度为供体掺杂剂浓度的四倍，以及从测量的电阻率值来表示载流子迁移率。该方法最终包括从热供体浓度确定氧浓度。

4. 发明申请

US20140163913A1 DETERMINING THE DOPANT CONTENT OF A COMPENSATED SILICON SAMPLE 审中-公开
标题翻译：确定补偿性硅样品的含量
公开(公告)号：US20140163913A1
公开(公告)日：2014-06-12
申请号：US14235218
申请日：2012-07-20
申请人： Sebastien Dubois , Nicolas Enjalbert , Jordi Veirman
发明人： Sebastien Dubois , Nicolas Enjalbert , Jordi Veirman
IPC分类号： G01N27/04
CPC分类号： G01N27/041 , C30B29/06 , C30B33/00
摘要： The method for determining the concentrations of dopant impurities in a silicon sample includes provision of a silicon ingot including donor-type dopant impurities and acceptor-type dopant impurities, a step for determining the position of a first area of the ingot in which a transition takes place between a first conductivity type and a second opposite conductivity type, a step for measuring the concentration of free charge carriers in the second area of the ingot, distinct from the first area, by Hall effect, Fourier transform infrared spectroscopy or a method using the lifetime of the charge carriers, and a step for determining the concentrations of dopant impurities in the sample from the position of the first area and the concentration of free charge carriers in the second area of the ingot.
摘要翻译：用于确定硅样品中的掺杂剂杂质的浓度的方法包括提供包括施主型掺杂剂杂质和受主型掺杂剂杂质的硅锭，确定转变所需的锭的第一区域的位置的步骤位于第一导电类型和第二相反导电类型之间的步骤，用于通过霍尔效应，傅立叶变换红外光谱法或使用第二导电类型的方法测量与第一区域不同的锭的第二区域中的自由电荷载流子的浓度的步骤电荷载体的寿命，以及从第一区域的位置和锭的第二区域中的游离载流子浓度确定样品中掺杂剂杂质的浓度的步骤。

5. 发明申请

US20130158889A1 METHOD FOR MAPPING OXYGEN CONCENTRATION 有权
标题翻译：用于测定氧气浓度的方法
公开(公告)号：US20130158889A1
公开(公告)日：2013-06-20
申请号：US13818744
申请日：2011-08-30
申请人： Jordi Veirman , Sebastien Dubois , Nicolas Enjalbert
发明人： Jordi Veirman , Sebastien Dubois , Nicolas Enjalbert
IPC分类号： G01N27/04 , G06F17/11
CPC分类号： G01N27/041 , G06F17/11
摘要： A method for determining the oxygen concentration of a sample made of a semiconductor material includes a heat treatment step of the sample to form thermal donors, the measurement of the resistivity in an area of the sample, the determination of the thermal donor concentration from a relation expressing the charge carrier mobility according to an ionized dopant impurity concentration, by adding to the dopant impurity concentration four times the thermal donor concentration, and from the measured resistivity value. The method finally includes determining the oxygen concentration from the thermal donor concentration.
摘要翻译：用于确定由半导体材料制成的样品的氧浓度的方法包括样品的热处理步骤以形成热供体，测量样品区域中的电阻率，从关系中确定供体的供体浓度根据电离掺杂剂杂质浓度，通过加入掺杂剂杂质浓度为供体掺杂剂浓度的四倍，以及从测量的电阻率值来表示载流子迁移率。该方法最终包括从热供体浓度确定氧浓度。

6. 发明申请

US20140033797A1 METHOD FOR DETERMINING INTERSTITIAL OXYGEN CONCENTRATION 有权
标题翻译：确定间质氧浓度的方法
公开(公告)号：US20140033797A1
公开(公告)日：2014-02-06
申请号：US14111974
申请日：2012-04-13
申请人： Jordi Veirman , Sebastien Dubois , Nicolas Enjalbert
发明人： Jordi Veirman , Sebastien Dubois , Nicolas Enjalbert
IPC分类号： G01N27/12 , G01J3/42
CPC分类号： G01N27/041 , G01J3/42 , G01N27/125 , H01L21/3225 , H01L22/12
摘要： A method for determining the interstitial oxygen concentration of a sample made from a p-doped semiconductor material includes a step of heat treatment of the sample in order to form thermal donors, determining the duration of the heat treatment required to obtain a compensated semiconductor material, determining the thermal donors concentration in the sample of compensated semiconductor material, from the charge carriers concentration, and determining the oxygen concentration from the thermal donors of and the duration of the heat treatment.
摘要翻译：用于确定由p掺杂半导体材料制成的样品的间隙氧浓度的方法包括热处理样品以形成热供体的步骤，确定获得补偿的半导体材料所需的热处理的持续时间，从载流子浓度确定补偿半导体材料的样品中的供体浓度，以及确定来自热供体的氧浓度和热处理的持续时间。

7. 发明申请

US20080075840A1 METHOD FOR ANNEALING PHOTOVOLTAIC CELLS 有权
标题翻译：退火光电池的方法
公开(公告)号：US20080075840A1
公开(公告)日：2008-03-27
申请号：US11845841
申请日：2007-08-28
申请人： Nicolas Enjalbert , Sebastien Dubois
发明人： Nicolas Enjalbert , Sebastien Dubois
IPC分类号： H01L31/0216 , B05D5/12
CPC分类号： H01L31/1868 , H01L31/1864 , Y02E10/547 , Y02P70/521
摘要： Method for annealing at least one photovoltaic cell comprising a substrate based on silicon with a first type of conductivity, a layer doped with a second type of conductivity produced in the substrate and forming a front face of the substrate, an antireflection layer produced on the front face of the substrate and forming a front face of the photovoltaic cell, at least one metallization on the front face of the cell and at least on metallization on a rear face of the substrate. This method comprises at least the steps of: a) a first annealing of the photovoltaic cell at a temperature between around 700° C. and 900° C., b) a second annealing of the photovoltaic cell at a temperature between around 200° C. and 500° C., at ambient pressure and in ambient air, with hydrogen being diffused in the substrate during the process.
摘要翻译：用于退火至少一个光伏电池的方法，所述光伏电池包括基于具有第一导电类型的硅的衬底，在衬底中产生的形成第二类导电性的层，并形成衬底的正面;在前面产生的抗反射层并且形成光伏电池的正面，在电池的前表面上至少一个金属化，并且至少在基板的背面上的金属化上。该方法至少包括以下步骤：a）在约700℃和900℃之间的温度下对光伏电池进行第一次退火，b）光伏电池在约200℃ 和500℃，在环境压力和环境空气中，氢在工艺过程中扩散到衬底中。

8. 发明申请

US20100041175A1 METHOD OF PURIFYING A CRYSTALLINE SILICON SUBSTRATE AND PROCESS FOR PRODUCING A PHOTOVOLTAIC CELL 有权
标题翻译：净化晶体硅基板的方法和制造光伏电池的方法
公开(公告)号：US20100041175A1
公开(公告)日：2010-02-18
申请号：US12499602
申请日：2009-07-08
申请人： Sebastien Dubois , Nicolas Enjalbert , Remi Monna
发明人： Sebastien Dubois , Nicolas Enjalbert , Remi Monna
IPC分类号： H01L21/322 , H01L31/18
CPC分类号： C01B33/037 , H01L21/3221 , H01L31/02363 , H01L31/028 , H01L31/186 , Y02E10/547 , Y02P70/521
摘要： The invention relates to a method of purifying a crystalline silicon substrate and to a process for producing a photovoltaic cell. The method of purifying a crystalline silicon substrate according to the invention is of the type that includes a step of extracting impurities by external gettering and which includes, before said step of extracting the impurities by external gettering, at least one step of rapidly annealing the substrate at a temperature of between 750° C. and 1000° C. inclusive for a time of between 1 second and 10 minutes inclusive. The invention is particularly applicable in the photovoltaic cell field.
摘要翻译：本发明涉及一种纯化晶体硅衬底的方法及其制造方法。根据本发明的纯化晶体硅衬底的方法是包括通过外部吸气提取杂质的步骤的方法，其包括在通过外部吸气萃取杂质的步骤之前，将至少一个步骤快速退火衬底在750℃和1000℃之间的温度下，包括1秒至10分钟之间的时间。本发明特别适用于光伏电池领域。

9. 发明授权

US09070820B2 Method for heat-treating a silicon substrate for the production of photovoltaic cells, and photovoltaic cell production method 有权
标题翻译：用于热处理用于生产光伏电池的硅衬底的方法以及光伏电池的制造方法
公开(公告)号：US09070820B2
公开(公告)日：2015-06-30
申请号：US13514836
申请日：2010-12-08
申请人： Sebastien Dubois , Nicolas Enjalbert
发明人： Sebastien Dubois , Nicolas Enjalbert
IPC分类号： H01L31/18 , C01B33/037 , C30B28/06 , C30B29/06 , C30B33/02 , H01L21/322
CPC分类号： H01L31/1864 , C01B33/037 , C30B28/06 , C30B29/06 , C30B33/02 , H01L21/3221 , H01L31/1804 , Y02E10/547 , Y02P70/521
摘要： The invention relates to a method for treating a silicon substrate for the production of photovoltaic cells against reduction in yield during the illumination of said photovoltaic cells. The invention also relates to a method for producing photovoltaic cells from the treated substrate. To said end, the invention relates to a method for treating a silicon substrate for the production of photovoltaic cells, said method including the following steps: a) providing a silicon substrate obtained from a metallurgically purified load, and b) annealing said substrate by heating the substrate to a temperature between 880° C. and 930° C. for a duration of between one and four hours, preferably at a temperature of 900° C., give or take 10° C., for two hours, give or take 10 minutes.
摘要翻译：本发明涉及一种用于处理用于生产光伏电池的硅衬底以在照射所述光伏电池期间产量降低的方法。本发明还涉及一种从处理过的衬底生产光伏电池的方法。为此，本发明涉及一种用于制造光伏电池的硅衬底的处理方法，所述方法包括以下步骤：a）提供由冶金纯化负载获得的硅衬底，以及b）通过加热对所述衬底进行退火将基材温度在880℃至930℃之间，持续时间为1至4小时，优选在900℃的温度下，给予或取10℃，2小时，给或取 10分钟。

10. 发明申请

US20090253225A1 METHOD OF PROCESSING A SEMICONDUCTOR SUBSTRATE BY THERMAL ACTIVATION OF LIGHT ELEMENTS 失效
标题翻译：通过热元件热激活加工半导体基板的方法
公开(公告)号：US20090253225A1
公开(公告)日：2009-10-08
申请号：US12401152
申请日：2009-03-10
申请人： Sebastien Dubois , Nicolas Enjalbert , Remi Monna
发明人： Sebastien Dubois , Nicolas Enjalbert , Remi Monna
IPC分类号： H01L21/322 , H01L31/0232 , H01L31/0236
CPC分类号： H01L31/182 , C30B29/52 , C30B33/02 , H01L21/3225 , H01L21/3242 , H01L31/03685 , H01L31/1812 , H01L31/1864 , Y02E10/546 , Y02P70/521
摘要： Method of processing a substrate containing at least one semiconductor of the SiXAY type and comprising at least four separate types of light elements, comprising at least the following steps: carrying out a first anneal of the substrate at a temperature T1 corresponding to a thermal activation temperature for a first one of the four types of light elements, carrying out a second anneal of the substrate at a temperature T2 corresponding to a thermal activation temperature for a second one of the four types of light elements, carrying out a third anneal of the substrate at a temperature T3 corresponding to a thermal activation temperature for a third one of the four types of light elements, carrying out a fourth anneal of the substrate at a temperature T4 corresponding to a thermal activation temperature for a fourth one of the four types of light elements, each anneal comprising a holding at the temperature T1, T2, T3 or T4 and the temperatures T1, T2, T3 and T4 being such that T1>T2>T3>T4.
摘要翻译：处理包含至少一种SiXay类型的半导体并且包括至少四种分离类型的光元件的衬底的方法，包括至少以下步骤：在对应于热活化温度的温度T1下进行衬底的第一退火对于四种类型的光元件中的第一种，在与四种类型的光元件中的第二种类型的光元件的热激活温度相对应的温度T2下进行基板的第二退火，进行基板的第三退火在与四种类型的光元件中的第三种类型的光元件的热活化温度相对应的温度T3下，在与四种类型的光中的第四种类型的光的热活化温度相对应的温度T4下进行基板的第四退火元素，每个退火包括在温度T1，T2，T3或T4以及温度T1，T2，T3和T4的保持，使得T1> T2> T 3> T4。

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