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1. 发明申请

US20090253225A1 METHOD OF PROCESSING A SEMICONDUCTOR SUBSTRATE BY THERMAL ACTIVATION OF LIGHT ELEMENTS 失效
标题翻译：通过热元件热激活加工半导体基板的方法
公开(公告)号：US20090253225A1
公开(公告)日：2009-10-08
申请号：US12401152
申请日：2009-03-10
申请人： Sebastien Dubois , Nicolas Enjalbert , Remi Monna
发明人： Sebastien Dubois , Nicolas Enjalbert , Remi Monna
IPC分类号： H01L21/322 , H01L31/0232 , H01L31/0236
CPC分类号： H01L31/182 , C30B29/52 , C30B33/02 , H01L21/3225 , H01L21/3242 , H01L31/03685 , H01L31/1812 , H01L31/1864 , Y02E10/546 , Y02P70/521
摘要： Method of processing a substrate containing at least one semiconductor of the SiXAY type and comprising at least four separate types of light elements, comprising at least the following steps: carrying out a first anneal of the substrate at a temperature T1 corresponding to a thermal activation temperature for a first one of the four types of light elements, carrying out a second anneal of the substrate at a temperature T2 corresponding to a thermal activation temperature for a second one of the four types of light elements, carrying out a third anneal of the substrate at a temperature T3 corresponding to a thermal activation temperature for a third one of the four types of light elements, carrying out a fourth anneal of the substrate at a temperature T4 corresponding to a thermal activation temperature for a fourth one of the four types of light elements, each anneal comprising a holding at the temperature T1, T2, T3 or T4 and the temperatures T1, T2, T3 and T4 being such that T1>T2>T3>T4.
摘要翻译：处理包含至少一种SiXay类型的半导体并且包括至少四种分离类型的光元件的衬底的方法，包括至少以下步骤：在对应于热活化温度的温度T1下进行衬底的第一退火对于四种类型的光元件中的第一种，在与四种类型的光元件中的第二种类型的光元件的热激活温度相对应的温度T2下进行基板的第二退火，进行基板的第三退火在与四种类型的光元件中的第三种类型的光元件的热活化温度相对应的温度T3下，在与四种类型的光中的第四种类型的光的热活化温度相对应的温度T4下进行基板的第四退火元素，每个退火包括在温度T1，T2，T3或T4以及温度T1，T2，T3和T4的保持，使得T1> T2> T 3> T4。

2. 发明申请

US20100041175A1 METHOD OF PURIFYING A CRYSTALLINE SILICON SUBSTRATE AND PROCESS FOR PRODUCING A PHOTOVOLTAIC CELL 有权
标题翻译：净化晶体硅基板的方法和制造光伏电池的方法
公开(公告)号：US20100041175A1
公开(公告)日：2010-02-18
申请号：US12499602
申请日：2009-07-08
申请人： Sebastien Dubois , Nicolas Enjalbert , Remi Monna
发明人： Sebastien Dubois , Nicolas Enjalbert , Remi Monna
IPC分类号： H01L21/322 , H01L31/18
CPC分类号： C01B33/037 , H01L21/3221 , H01L31/02363 , H01L31/028 , H01L31/186 , Y02E10/547 , Y02P70/521
摘要： The invention relates to a method of purifying a crystalline silicon substrate and to a process for producing a photovoltaic cell. The method of purifying a crystalline silicon substrate according to the invention is of the type that includes a step of extracting impurities by external gettering and which includes, before said step of extracting the impurities by external gettering, at least one step of rapidly annealing the substrate at a temperature of between 750° C. and 1000° C. inclusive for a time of between 1 second and 10 minutes inclusive. The invention is particularly applicable in the photovoltaic cell field.
摘要翻译：本发明涉及一种纯化晶体硅衬底的方法及其制造方法。根据本发明的纯化晶体硅衬底的方法是包括通过外部吸气提取杂质的步骤的方法，其包括在通过外部吸气萃取杂质的步骤之前，将至少一个步骤快速退火衬底在750℃和1000℃之间的温度下，包括1秒至10分钟之间的时间。本发明特别适用于光伏电池领域。

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