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1. 发明授权

US09711395B2 Overlay marks, methods of forming the same, and methods of fabricating semiconductor devices using the same 有权
公开(公告)号：US09711395B2
公开(公告)日：2017-07-18
申请号：US14810621
申请日：2015-07-28
申请人： Jong-Su Kim , Dong-Woon Park , Tae-Hoi Park , Yong-Kug Bae , Tae-Hwan Oh , Chang-Hoon Lee , Boo-Hyun Ham
发明人： Jong-Su Kim , Dong-Woon Park , Tae-Hoi Park , Yong-Kug Bae , Tae-Hwan Oh , Chang-Hoon Lee , Boo-Hyun Ham
IPC分类号： H01L21/768 , H01L21/8234 , H01L21/311 , H01L27/02 , G03F7/20 , H01L21/285
CPC分类号： H01L21/76816 , G03F7/70633 , G03F7/70683 , H01L21/28518 , H01L21/31144 , H01L21/76811 , H01L21/76897 , H01L21/823437 , H01L21/823475 , H01L27/0207
摘要： In a method of fabricating a semiconductor device, a substrate including a circuit area and an overlay mark area is provided. Conductive gate patterns are formed on the substrate in the circuit area such that the overlay mark area is free of the gate patterns, and conductive contact patterns are formed on the substrate between the gate patterns in the circuit area. A mirror pattern is formed on the substrate in the overlay mark area, where the mirror pattern and the contact patterns comprising a same reflective material. Related semiconductor devices, overlay marks, and fabrication methods are also discussed.

2. 发明申请

US20160035617A1 OVERLAY MARKS, METHODS OF FORMING THE SAME, AND METHODS OF FABRICATING SEMICONDUCTOR DEVICES USING THE SAME 有权
标题翻译：叠加标记，其形成方法以及使用其制造半导体器件的方法
公开(公告)号：US20160035617A1
公开(公告)日：2016-02-04
申请号：US14810621
申请日：2015-07-28
申请人： Jong-Su Kim , Dong-Woon Park , Tae-Hoi Park , Yong-Kug Bae , Tae-Hwan Oh , Chang-Hoon Lee , Boo-Hyun Ham
发明人： Jong-Su Kim , Dong-Woon Park , Tae-Hoi Park , Yong-Kug Bae , Tae-Hwan Oh , Chang-Hoon Lee , Boo-Hyun Ham
IPC分类号： H01L21/768 , H01L21/285 , H01L21/311 , H01L21/8234 , H01L21/3213
CPC分类号： H01L21/76816 , G03F7/70633 , G03F7/70683 , H01L21/28518 , H01L21/31144 , H01L21/76811 , H01L21/76897 , H01L21/823437 , H01L21/823475 , H01L27/0207
摘要： In a method of fabricating a semiconductor device, a substrate including a circuit area and an overlay mark area is provided. Conductive gate patterns are formed on the substrate in the circuit area such that the overlay mark area is free of the gate patterns, and conductive contact patterns are formed on the substrate between the gate patterns in the circuit area. A mirror pattern is formed on the substrate in the overlay mark area, where the mirror pattern and the contact patterns comprising a same reflective material. Related semiconductor devices, overlay marks, and fabrication methods are also discussed.
摘要翻译：在制造半导体器件的方法中，提供了包括电路区域和覆盖标记区域的衬底。在电路区域中的基板上形成导电栅极图案，使得覆盖标记区域没有栅极图案，并且在基板上在电路区域中的栅极图案之间形成导电接触图案。在覆盖标记区域中的基板上形成反射镜图案，其中反射镜图案和接触图案包括相同的反射材料。还讨论了相关半导体器件，覆盖标记和制造方法。

3. 发明授权

US08691693B2 Methods of manufacturing semiconductor device 有权
标题翻译：制造半导体器件的方法
公开(公告)号：US08691693B2
公开(公告)日：2014-04-08
申请号：US13290285
申请日：2011-11-07
申请人： Sang-Jin Kim , Jong-Chan Shin , Yong-Kug Bae , Do-Hyoung Kim , Dong-Woon Park
发明人： Sang-Jin Kim , Jong-Chan Shin , Yong-Kug Bae , Do-Hyoung Kim , Dong-Woon Park
IPC分类号： H01L21/44 , H01L29/40
CPC分类号： H01L21/76895 , H01L21/28518 , H01L21/31144 , H01L21/76897 , H01L21/823418 , H01L21/823475 , H01L21/823481 , H01L29/66545 , H01L29/66628 , H01L29/66636 , H01L29/7848
摘要： In a method of manufacturing a semiconductor device, a first etching mask and a second etching mask are formed sequentially on a metal gate structure on a substrate and a first insulating interlayer covering a sidewall of the metal gate structure respectively. An opening is formed to expose a top surface of the substrate by removing a portion of the first insulating interlayer not overlapped with the first etching mask or the second etching mask. A metal silicide pattern is formed on the exposed top surface of the substrate. A plug on the metal silicide pattern is formed to fill a remaining portion of the opening. Further, a planarization layer may be used as the second etching mask.
摘要翻译：在制造半导体器件的方法中，依次在基板上的金属栅极结构和覆盖金属栅极结构的侧壁的第一绝缘夹层上形成第一蚀刻掩模和第二蚀刻掩模。通过除去与第一蚀刻掩模或第二蚀刻掩模不重叠的第一绝缘夹层的一部分，形成开口以暴露基板的顶表面。在衬底的暴露的顶表面上形成金属硅化物图案。形成金属硅化物图案上的塞子以填充开口的剩余部分。此外，可以使用平坦化层作为第二蚀刻掩模。

4. 发明申请

US20120122286A1 METHODS OF MANUFACTURING SEMICONDUCTOR DEVICE 有权
标题翻译：制造半导体器件的方法
公开(公告)号：US20120122286A1
公开(公告)日：2012-05-17
申请号：US13290285
申请日：2011-11-07
申请人： Sang-Jin Kim , Jong-Chan Shin , Yong-Kug Bae , Do-Hyoung Kim , Dong-Woon Park
发明人： Sang-Jin Kim , Jong-Chan Shin , Yong-Kug Bae , Do-Hyoung Kim , Dong-Woon Park
IPC分类号： H01L21/336 , H01L21/768
CPC分类号： H01L21/76895 , H01L21/28518 , H01L21/31144 , H01L21/76897 , H01L21/823418 , H01L21/823475 , H01L21/823481 , H01L29/66545 , H01L29/66628 , H01L29/66636 , H01L29/7848
摘要： In a method of manufacturing a semiconductor device, a first etching mask and a second etching mask are formed sequentially on a metal gate structure on a substrate and a first insulating interlayer covering a sidewall of the metal gate structure respectively. An opening is formed to expose a top surface of the substrate by removing a portion of the first insulating interlayer not overlapped with the first etching mask or the second etching mask. A metal silicide pattern is formed on the exposed top surface of the substrate. A plug on the metal silicide pattern is formed to fill a remaining portion of the opening. Further, a planarization layer may be used as the second etching mask.
摘要翻译：在制造半导体器件的方法中，依次在基板上的金属栅极结构和覆盖金属栅极结构的侧壁的第一绝缘夹层上形成第一蚀刻掩模和第二蚀刻掩模。通过除去与第一蚀刻掩模或第二蚀刻掩模不重叠的第一绝缘夹层的一部分，形成开口以暴露基板的顶表面。在衬底的暴露的顶表面上形成金属硅化物图案。形成金属硅化物图案上的塞子以填充开口的剩余部分。此外，可以使用平坦化层作为第二蚀刻掩模。

5. 发明申请

US20060103824A1 Auto focus system, auto focus method, and exposure apparatus using the same 有权
标题翻译：自动对焦系统，自动对焦方式和使用其的曝光装置
公开(公告)号：US20060103824A1
公开(公告)日：2006-05-18
申请号：US11269603
申请日：2005-11-09
申请人： Dong-Woon Park
发明人： Dong-Woon Park
IPC分类号： G03B27/52
CPC分类号： G03B27/52 , G03F9/7026 , G03F9/7088
摘要： An auto focus system includes a stage on which a substrate is mounted, light sources that irradiate the substrate with a plurality of focus beams directed towards the substrate at different angles, sensors that detect the focus beams reflected from the substrate, and a controller that determines the relative location of a surface of the substrate according to the locations at which the focus beams are detected by the sensors and positions the substrate accordingly. To this end, the controller performs calculations that are free from the influence of variations in the refractive index of the medium through which the focus beams propagate to the surface of the substrate. Therefore, the autofocus process is carried out with a high degree of precision.
摘要翻译：自动对焦系统包括其上安装有基板的阶段，以不同角度朝向基板指向的多个聚焦光束照射基板的光源，检测从基板反射的聚焦光束的传感器，以及确定根据由传感器检测聚焦光束的位置，相应地定位衬底，衬底表面的相对位置。为此，控制器执行不受聚焦光束传播到衬底表面的介质的折射率变化影响的计算。因此，以高精度进行自动聚焦处理。

6. 发明授权

US07877723B2 Method of arranging mask patterns and apparatus using the method 有权
标题翻译：使用该方法布置掩模图案和装置的方法
公开(公告)号：US07877723B2
公开(公告)日：2011-01-25
申请号：US11936610
申请日：2007-11-07
申请人： Dong-Woon Park
发明人： Dong-Woon Park
IPC分类号： G06F17/50
CPC分类号： G03F1/36
摘要： Provided are a method of fabricating a semiconductor and an apparatus using the method, and more particularly, a method of effectively arranging assist features on the mask and an apparatus using the method. The method of arranging mask patterns includes separately calculating contributions of an assist feature to image intensity at an optimal focus and at a defocus position and placing the assist feature at a position where the contribution of the assist feature to the image intensity is greater at the defocus position than at the optimal focus position. The method includes a first operation of obtaining a first contribution function for contribution of an assist feature to image intensity at a main feature at a first focus position; a second operation of obtaining a second contribution function for contribution of the assist feature to the image intensity at the main feature at a second focus position; and a third operation of determining the position of the assist feature to be a position satisfying a condition that a linear combination of the first contribution function and the second contribution function exceeds a predetermined threshold value.
摘要翻译：提供一种制造半导体的方法和使用该方法的装置，更具体地，涉及一种在掩模上有效布置辅助特征的方法以及使用该方法的装置。布置掩模图案的方法包括分别计算辅助特征对最佳焦点和散焦位置处的图像强度的贡献，并将辅助特征放置在在散焦时辅助特征对图像强度的贡献大于图像强度的位置位置比最佳聚焦位置。该方法包括获得第一贡献函数的第一操作，用于辅助特征对第一聚焦位置处的主要特征处的图像强度的贡献; 获得辅助特征对第二聚焦位置处的主要特征处的图像强度的贡献的第二贡献函数的第二操作; 以及第三操作，其将所述辅助特征的位置确定为满足所述第一贡献函数和所述第二贡献函数的线性组合的条件的位置超过预定阈值。

7. 发明授权

US07433048B2 Interferometer systems for measuring displacement and exposure systems using the same 有权
标题翻译：用于测量位移的干涉仪系统及使用其的曝光系统
公开(公告)号：US07433048B2
公开(公告)日：2008-10-07
申请号：US11217168
申请日：2005-09-01
申请人： Dong-Woon Park
发明人： Dong-Woon Park
IPC分类号： G01B11/02 , G01D5/36
CPC分类号： G03F7/70775 , G01B9/02021 , G01B9/02027 , G01B9/02061 , G01B2290/45
摘要： Interferometer systems for measuring displacement include a displacement interferometer. This interferometer includes a displacement converter responsive to a measuring beam of light. The displacement converter is configured to transform movement thereof in a direction orthogonal to the measuring beam of light into a change in path length between a reflective surface of the displacement converter and the measuring beam of light. The displacement converter may include a transmission grating and a displacement mirror or a reflecting grating.
摘要翻译：用于测量位移的干涉仪系统包括位移干涉仪。该干涉仪包括响应于测量光束的位移转换器。位移转换器被配置为将与测量光束正交的方向的运动变换成位移转换器的反射表面和测量光束之间的路径长度的变化。位移转换器可以包括透射光栅和位移镜或反射光栅。

8. 发明授权

US07937676B2 Method of arranging mask patterns and apparatus using the method 有权
标题翻译：使用该方法布置掩模图案和装置的方法
公开(公告)号：US07937676B2
公开(公告)日：2011-05-03
申请号：US11937317
申请日：2007-11-08
申请人： Dong-Woon Park
发明人： Dong-Woon Park
IPC分类号： G06F17/50
CPC分类号： G03F1/36
摘要： In positioning assist features on a photomask pattern to improve the image quality of the main features, the method includes deriving an h-function in a first process which represents a contribution of an assist feature with respect to image intensity at a main feature. In a continuation of the method, the position of the assist features are determined in a second process using the h-function derived in the first step. The assist features are then formed on the mask at the positions indicated. Also included is a computer readable medium having instructions for performing the h-function calculations, and the mask apparatus itself with both main and assist features positioned according to the h-function.
摘要翻译：在光掩模图案中的定位辅助特征中以提高主要特征的图像质量，该方法包括在表示辅助特征相对于主要特征的图像强度的贡献的第一过程中导出h函数。在该方法的继续中，使用在第一步骤中导出的h函数的第二过程来确定辅助特征的位置。然后在所指示的位置在掩模上形成辅助特征。还包括具有用于执行h功能计算的指令的计算机可读介质，以及具有根据h功能定位的主和辅助特征的掩模设备本身。

9. 发明授权

US07460210B2 Auto focus system, auto focus method, and exposure apparatus using the same 有权
标题翻译：自动对焦系统，自动对焦方式和使用其的曝光装置
公开(公告)号：US07460210B2
公开(公告)日：2008-12-02
申请号：US11269603
申请日：2005-11-09
申请人： Dong-Woon Park
发明人： Dong-Woon Park
IPC分类号： G03B27/42
CPC分类号： G03B27/52 , G03F9/7026 , G03F9/7088
摘要： An auto focus system includes a stage on which a substrate is mounted, light sources that irradiate the substrate with a plurality of focus beams directed towards the substrate at different angles, sensors that detect the focus beams reflected from the substrate, and a controller that determines the relative location of a surface of the substrate according to the locations at which the focus beams are detected by the sensors and positions the substrate accordingly. To this end, the controller performs calculations that are free from the influence of variations in the refractive index of the medium through which the focus beams propagate to the surface of the substrate. Therefore, the autofocus process is carried out with a high degree of precision.
摘要翻译：自动对焦系统包括其上安装有基板的阶段，以不同角度朝向基板指向的多个聚焦光束照射基板的光源，检测从基板反射的聚焦光束的传感器，以及确定根据由传感器检测聚焦光束的位置，相应地定位衬底，衬底表面的相对位置。为此，控制器执行不受聚焦光束传播到衬底表面的介质的折射率变化影响的计算。因此，以高精度进行自动聚焦处理。

10. 发明申请

US20080138719A1 METHOD OF ARRANGING MASK PATTERNS AND APPARATUS USING THE METHOD 有权
标题翻译：使用方法安装掩模图案和装置的方法
公开(公告)号：US20080138719A1
公开(公告)日：2008-06-12
申请号：US11936610
申请日：2007-11-07
申请人： Dong-Woon Park
发明人： Dong-Woon Park
IPC分类号： G03F1/00 , G06F17/50
CPC分类号： G03F1/36
摘要： Provided are a method of fabricating a semiconductor and an apparatus using the method, and more particularly, a method of effectively arranging assist features on the mask and an apparatus using the method. The method of arranging mask patterns includes separately calculating contributions of an assist feature to image intensity at an optimal focus and at a defocus position and placing the assist feature at a position where the contribution of the assist feature to the image intensity is greater at the defocus position than at the optimal focus position. The method includes a first operation of obtaining a first contribution function for contribution of an assist feature to image intensity at a main feature at a first focus position; a second operation of obtaining a second contribution function for contribution of the assist feature to the image intensity at the main feature at a second focus position; and a third operation of determining the position of the assist feature to be a position satisfying a condition that a linear combination of the first contribution function and the second contribution function exceeds a predetermined threshold value.
摘要翻译：提供一种制造半导体的方法和使用该方法的装置，更具体地，涉及一种在掩模上有效布置辅助特征的方法以及使用该方法的装置。布置掩模图案的方法包括分别计算辅助特征对最佳焦点和散焦位置处的图像强度的贡献，并将辅助特征放置在在散焦时辅助特征对图像强度的贡献大于图像强度的位置位置比最佳聚焦位置。该方法包括获得第一贡献函数的第一操作，用于辅助特征对第一聚焦位置处的主要特征处的图像强度的贡献; 获得辅助特征对第二聚焦位置处的主要特征处的图像强度的贡献的第二贡献函数的第二操作; 以及第三操作，其将所述辅助特征的位置确定为满足所述第一贡献函数和所述第二贡献函数的线性组合的条件的位置超过预定阈值。

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