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1. 发明授权

US06926386B2 Inkjet printer head and method of fabricating the same 有权
标题翻译：喷墨打印头及其制造方法
公开(公告)号：US06926386B2
公开(公告)日：2005-08-09
申请号：US10603828
申请日：2003-06-26
申请人： Jong-Cheol Shin , Kwang-Joon Yoon , Sung-Joon Park
发明人： Jong-Cheol Shin , Kwang-Joon Yoon , Sung-Joon Park
IPC分类号： B41J2/01 , B41J2/045 , B41J2/05 , B41J2/055 , B41J2/14 , B41J2/16 , B41J2/34 , B41J2/195
CPC分类号： B41J2/1631 , B41J2/14137 , B41J2/1601 , B41J2/1628 , B41J2/1632
摘要： An inkjet printer head includes a semiconductor wafer having a nozzle portion for ejecting ink, an ink cartridge for supplying ink to the nozzle portion, and an ink ejection unit interposed between the ink cartridge and the semiconductor wafer. A method of forming the printer head includes forming an ink ejection unit having an opening on a semiconductor wafer to expose an upper surface of the wafer, etching the wafer through the opening in the ink ejection unit to form a nozzle in the semiconductor wafer, and attaching an ink cartridge to the upper surface of the semiconductor wafer.
摘要翻译：喷墨打印头包括具有用于喷射墨水的喷嘴部分的半导体晶片，用于向喷嘴部分供墨的墨盒以及介于墨盒和半导体晶片之间的墨水喷射单元。一种形成打印头的方法包括：在半导体晶片上形成具有开口的喷墨单元以暴露晶片的上表面，通过喷墨单元中的开口蚀刻晶片，以在半导体晶片中形成喷嘴;以及将墨盒附接到半导体晶片的上表面。

2. 发明授权

US5721147A Methods of forming bipolar junction transistors 失效
标题翻译：形成双极结晶体管的方法
公开(公告)号：US5721147A
公开(公告)日：1998-02-24
申请号：US712289
申请日：1996-09-11
申请人： Kwang-Joon Yoon
发明人： Kwang-Joon Yoon
IPC分类号： H01L29/73 , H01L21/328 , H01L21/331 , H01L29/417 , H01L29/732 , H01L21/265
CPC分类号： H01L29/66272 , H01L29/41708 , H01L29/7322 , Y10S148/01 , Y10S148/011
摘要： Methods of forming bipolar junction transistors include the steps of forming a first insulating layer on a face of a semiconductor substrate containing a collector region of first conductivity type therein and then forming an opening in the first insulating layer to expose the collector region at the face. An extrinsic base region contact layer of second conductivity type is then formed on the first insulating layer and in the opening and then an extrinsic base region of second conductivity type is formed in the collector region, at the opening in the first insulating layer. Next, a second insulating layer is formed on the extrinsic base region contact layer and first insulating layer, using the first insulating layer as a mask to prevent contact between the second insulating layer and the collector region at the face. To complete the transistor, an intrinsic base region of second conductivity type is then formed in the collector region and then an emitter region of first conductivity type is formed in the intrinsic base region.
摘要翻译：形成双极结型晶体管的方法包括以下步骤：在包含第一导电类型的集电极区域的半导体衬底的表面上形成第一绝缘层，然后在第一绝缘层中形成开口以露出面部的集电极区域。然后在第一绝缘层和开口中形成第二导电类型的非本征基区接触层，然后在第一绝缘层的开口处在集电极区域形成第二导电类型的非本征基区。接下来，使用第一绝缘层作为掩模，在外部基极区域接触层和第一绝缘层上形成第二绝缘层，以防止第二绝缘层和面部的集电区之间的接触。为了完成晶体管，在集电极区域形成第二导电类型的本征基极区域，然后在本征基极区域形成第一导电类型的发射极区域。

3. 发明申请

US20060138580A1 Photo-detecting device and related method of formation 失效
标题翻译：光电检测装置及其相关方法
公开(公告)号：US20060138580A1
公开(公告)日：2006-06-29
申请号：US11305033
申请日：2005-12-19
申请人： Tae-Jin Kim , Kwang-Joon Yoon , Phil-Jae Chang , Kye-Won Maeng , Young-Jun Park
发明人： Tae-Jin Kim , Kwang-Joon Yoon , Phil-Jae Chang , Kye-Won Maeng , Young-Jun Park
IPC分类号： H01L31/06
CPC分类号： H01L31/103
摘要： A photo-detecting device includes a buried doping layer of a first conductivity type and disposed at an upper portion of a silicon substrate. A first silicon epitaxial layer of first conductivity type is disposed on the buried doping layer, and a second silicon epitaxial layer of second conductivity type is disposed on the first silicon epitaxial layer. An isolation doping layer doped of first conductivity type is disposed at a predetermined region of the second silicon epitaxial layer to define a body region of second conductivity type. A silicon germanium epitaxial layer of second conductivity type is disposed on the body region.
摘要翻译：光检测装置包括第一导电类型的掩埋掺杂层并且设置在硅衬底的上部。第一导电类型的第一硅外延层设置在掩埋掺杂层上，并且第二导电类型的第二硅外延层设置在第一硅外延层上。掺杂有第一导电类型的隔离掺杂层设置在第二硅外延层的预定区域，以限定第二导电类型的体区。第二导电类型的硅锗外延层设置在身体区域上。

4. 发明授权

US07420207B2 Photo-detecting device and related method of formation 失效
标题翻译：光电检测装置及其相关方法
公开(公告)号：US07420207B2
公开(公告)日：2008-09-02
申请号：US11305033
申请日：2005-12-19
申请人： Tae-Jin Kim , Kwang-Joon Yoon , Phil-Jae Chang , Kye-Won Maeng , Young-Jun Park
发明人： Tae-Jin Kim , Kwang-Joon Yoon , Phil-Jae Chang , Kye-Won Maeng , Young-Jun Park
IPC分类号： H01L31/0368
CPC分类号： H01L31/103
摘要： A photo-detecting device includes a buried doping layer of a first conductivity type and disposed at an upper portion of a silicon substrate. A first silicon epitaxial layer of first conductivity type is disposed on the buried doping layer, and a second silicon epitaxial layer of second conductivity type is disposed on the first silicon epitaxial layer. An isolation doping layer doped of first conductivity type is disposed at a predetermined region of the second silicon epitaxial layer to define a body region of second conductivity type. A silicon germanium epitaxial layer of second conductivity type is disposed on the body region.
摘要翻译：光检测装置包括第一导电类型的掩埋掺杂层并且设置在硅衬底的上部。第一导电类型的第一硅外延层设置在掩埋掺杂层上，并且第二导电类型的第二硅外延层设置在第一硅外延层上。掺杂有第一导电类型的隔离掺杂层设置在第二硅外延层的预定区域，以限定第二导电类型的体区。第二导电类型的硅锗外延层设置在身体区域上。

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