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1. 发明申请

US20080219547A1 METHOD OF ANALYZING A WAFER SAMPLE 失效
标题翻译：分析样品的方法
公开(公告)号：US20080219547A1
公开(公告)日：2008-09-11
申请号：US12041127
申请日：2008-03-03
申请人： Jong-An Kim , Yu-Sin Yang , Chung-Sam Jun , Moon-Shik Kang , Ji-Hye Kim
发明人： Jong-An Kim , Yu-Sin Yang , Chung-Sam Jun , Moon-Shik Kang , Ji-Hye Kim
IPC分类号： G06K9/00
CPC分类号： G06T7/001 , G01N21/95607 , G06T2207/10061 , G06T2207/30148
摘要： In a method of analyzing a wafer sample, a first defect of a photoresist pattern on the wafer sample having shot regions exposed with related exposure conditions is detected. A first portion of the pattern includes the shot regions exposed with an exposure condition corresponding to a reference exposure condition and a tolerance error range of the reference exposure condition. The first defect repeatedly existing in at least two of the shot regions in a second portion of the pattern is set up as a second defect of the pattern. A first reference image displaying the second defect is obtained. The first defect of the shot regions in the first portion corresponding to the second defect is set up as a third defect corresponding to weak points of the pattern. The exposure conditions of the shot region having no weak points are set up as an exposure margin of an exposure process.
摘要翻译：在分析晶片样品的方法中，检测具有用相关曝光条件曝光的拍摄区域的晶片样品上的光致抗蚀剂图案的第一缺陷。图案的第一部分包括用与参考曝光条件相对应的曝光条件和参考曝光条件的公差误差范围暴露的照射区域。在图案的第二部分中的至少两个拍摄区域中重复存在的第一缺陷被设置为图案的第二缺陷。获得显示第二缺陷的第一参考图像。对应于第二缺陷的第一部分中的拍摄区域的第一缺陷被设置为对应于图案的弱点的第三缺陷。没有弱点的照射区域的曝光条件被设置为曝光处理的曝光余量。

2. 发明申请

US20080112608A1 Method of detecting defects in patterns and apparatus for performing the same 有权
标题翻译：检测图案中的缺陷的方法及其执行方法
公开(公告)号：US20080112608A1
公开(公告)日：2008-05-15
申请号：US11979776
申请日：2007-11-08
申请人： Yu-Sin Yang , Chung-Sam Jun , Jong-An Kim , Moon-Shik Kang , Ji-Hye Kim
发明人： Yu-Sin Yang , Chung-Sam Jun , Jong-An Kim , Moon-Shik Kang , Ji-Hye Kim
IPC分类号： G06K9/00
CPC分类号： G06T7/001 , G06T2207/10056 , G06T2207/20056 , G06T2207/30148
摘要： In a method of detecting defects in patterns and an apparatus for performing the method, a first image of a detection region on a semiconductor substrate may be acquired. A second image may be acquired from the first image by performing a Fourier transform and performing a low pass filtering. The second image may be compared with a reference image so that the defects of the detection region are detected. Existence of the defect of the second image is determined using a relation value between a grey level of each of pixels of the second image and the reference image, respectively. When a defect exists, the horizontal and the vertical positions of the pixel where the relation value is minimum are combined to determine the position of the defect.
摘要翻译：在检测图案中的缺陷的方法和执行该方法的装置中，可以获取半导体衬底上的检测区域的第一图像。可以通过执行傅里叶变换并执行低通滤波从第一图像获取第二图像。可以将第二图像与参考图像进行比较，从而检测出检测区域的缺陷。使用第二图像的每个像素的灰度级与参考图像之间的关系值来确定第二图像的缺陷的存在。当存在缺陷时，组合关系值最小的像素的水平和垂直位置以确定缺陷的位置。

3. 发明授权

US08050488B2 Method of analyzing a wafer sample 失效
标题翻译：分析晶圆样品的方法
公开(公告)号：US08050488B2
公开(公告)日：2011-11-01
申请号：US12041127
申请日：2008-03-03
申请人： Jong-An Kim , Yu-Sin Yang , Chung-Sam Jun , Moon-Shik Kang , Ji-Hye Kim
发明人： Jong-An Kim , Yu-Sin Yang , Chung-Sam Jun , Moon-Shik Kang , Ji-Hye Kim
IPC分类号： G06K9/00
CPC分类号： G06T7/001 , G01N21/95607 , G06T2207/10061 , G06T2207/30148
摘要： In a method of analyzing a wafer sample, a first defect of a photoresist pattern on the wafer sample having shot regions exposed with related exposure conditions is detected. A first portion of the pattern includes the shot regions exposed with an exposure condition corresponding to a reference exposure condition and a tolerance error range of the reference exposure condition. The first defect repeatedly existing in at least two of the shot regions in a second portion of the pattern is set up as a second defect of the pattern. A first reference image displaying the second defect is obtained. The first defect of the shot regions in the first portion corresponding to the second defect is set up as a third defect corresponding to weak points of the pattern. The exposure conditions of the shot region having no weak points are set up as an exposure margin of an exposure process.
摘要翻译：在分析晶片样品的方法中，检测具有用相关曝光条件曝光的拍摄区域的晶片样品上的光致抗蚀剂图案的第一缺陷。图案的第一部分包括用与参考曝光条件相对应的曝光条件和参考曝光条件的公差误差范围曝光的拍摄区域。在图案的第二部分中的至少两个拍摄区域中重复存在的第一缺陷被设置为图案的第二缺陷。获得显示第二缺陷的第一参考图像。对应于第二缺陷的第一部分中的拍摄区域的第一缺陷被设置为对应于图案的弱点的第三缺陷。没有弱点的照射区域的曝光条件被设置为曝光处理的曝光余量。

4. 发明授权

US08126258B2 Method of detecting defects in patterns on semiconductor substrate by comparing second image with reference image after acquiring second image from first image and apparatus for performing the same 有权
标题翻译：通过在从第一图像获取第二图像之后将第二图像与参考图像进行比较来检测半导体基板上的图案中的缺陷的方法和用于执行其的装置
公开(公告)号：US08126258B2
公开(公告)日：2012-02-28
申请号：US11979776
申请日：2007-11-08
申请人： Yu-Sin Yang , Chung-Sam Jun , Jong-An Kim , Moon-Shik Kang , Ji-Hye Kim
发明人： Yu-Sin Yang , Chung-Sam Jun , Jong-An Kim , Moon-Shik Kang , Ji-Hye Kim
IPC分类号： G06K9/00
CPC分类号： G06T7/001 , G06T2207/10056 , G06T2207/20056 , G06T2207/30148
摘要： In a method of detecting defects in patterns and an apparatus for performing the method, a first image of a detection region on a semiconductor substrate may be acquired. A second image may be acquired from the first image by performing a Fourier transform and performing a low pass filtering. The second image may be compared with a reference image so that the defects of the detection region are detected. Existence of the defect of the second image is determined using a relation value between a grey level of each of pixels of the second image and the reference image, respectively. When a defect exists, the horizontal and the vertical positions of the pixel where the relation value is minimum are combined to determine the position of the defect.
摘要翻译：在检测图案中的缺陷的方法和执行该方法的装置中，可以获取半导体衬底上的检测区域的第一图像。可以通过执行傅里叶变换并执行低通滤波从第一图像获取第二图像。可以将第二图像与参考图像进行比较，从而检测出检测区域的缺陷。使用第二图像的每个像素的灰度级与参考图像之间的关系值来确定第二图像的缺陷的存在。当存在缺陷时，组合关系值最小的像素的水平和垂直位置以确定缺陷的位置。

5. 发明授权

US08055056B2 Method of detecting defects of patterns on a semiconductor substrate and apparatus for performing the same 有权
标题翻译：检测半导体衬底上的图案缺陷的方法及其执行方法
公开(公告)号：US08055056B2
公开(公告)日：2011-11-08
申请号：US11934972
申请日：2007-11-05
申请人： Jong-An Kim , Yu-Sin Yang , Chung-Sam Jun , Moon-Shik Kang , Ji-Hye Kim
发明人： Jong-An Kim , Yu-Sin Yang , Chung-Sam Jun , Moon-Shik Kang , Ji-Hye Kim
IPC分类号： G06K9/00 , G01N21/00
CPC分类号： G06T7/0004 , G06T2207/30148
摘要： In a method of detecting defects of patterns on a semiconductor substrate and an apparatus for performing the method information on positions of reference defects influencing an operation of a circuit including the patterns when the patterns are formed on the semiconductor substrate is acquired in advance. Preliminary defects of the patterns formed on the semiconductor substrate are detected. Positions of the preliminary defects of the patterns are compared with positions of the reference defects. The preliminary defects having the positions substantially the same as the positions of the reference defects are set to be defects of the patterns so that the actual defects are detected.
摘要翻译：在半导体衬底上检测图案的缺陷的方法以及当在半导体衬底上形成图案时影响包括图案的电路的工作的参考缺陷的位置执行方法信息的装置的方法被预先获取。检测在半导体衬底上形成的图案的初步缺陷。将模式的初步缺陷的位置与参考缺陷的位置进行比较。具有与参考缺陷的位置基本相同的位置的初步缺陷被设置为图案的缺陷，从而检测到实际的缺陷。

6. 发明申请

US20080107329A1 METHOD OF DETECTING DEFECTS OF PATTERNS ON A SEMICONDUCTOR SUBSTRATE AND APPARATUS FOR PERFORMING THE SAME 有权
标题翻译：检测半导体基板上的图案缺陷的方法及其实施方法
公开(公告)号：US20080107329A1
公开(公告)日：2008-05-08
申请号：US11934972
申请日：2007-11-05
申请人： Jong-An Kim , Yu-Sin Yang , Chung-Sam Jun , Moon-Shik Kang , Ji-Hye Kim
发明人： Jong-An Kim , Yu-Sin Yang , Chung-Sam Jun , Moon-Shik Kang , Ji-Hye Kim
IPC分类号： G06K9/00
CPC分类号： G06T7/0004 , G06T2207/30148
摘要： In a method of detecting defects of patterns on a semiconductor substrate and an apparatus for performing the method information on positions of reference defects influencing an operation of a circuit including the patterns when the patterns are formed on the semiconductor substrate is acquired in advance. Preliminary defects of the patterns formed on the semiconductor substrate are detected. Positions of the preliminary defects of the patterns are compared with positions of the reference defects. The preliminary defects having the positions substantially the same as the positions of the reference defects are set to be defects of the patterns so that the actual defects are detected.
摘要翻译：在半导体衬底上检测图案的缺陷的方法以及当在半导体衬底上形成图案时影响包括图案的电路的工作的参考缺陷的位置执行方法信息的装置的方法被预先获取。检测在半导体衬底上形成的图案的初步缺陷。将模式的初步缺陷的位置与参考缺陷的位置进行比较。具有与参考缺陷的位置基本相同的位置的初步缺陷被设置为图案的缺陷，从而检测到实际的缺陷。

7. 发明授权

US08055057B2 Method for detecting defects in a substrate having a semiconductor device thereon 失效
标题翻译：用于检测其上具有半导体器件的衬底中的缺陷的方法
公开(公告)号：US08055057B2
公开(公告)日：2011-11-08
申请号：US12007680
申请日：2008-01-14
申请人： Moon-Shik Kang , Jong-An Kim , Myung-Sub Lee , Yu-Sin Yang , Ji-Hye Kim
发明人： Moon-Shik Kang , Jong-An Kim , Myung-Sub Lee , Yu-Sin Yang , Ji-Hye Kim
IPC分类号： G06K9/00
CPC分类号： G01N21/95607 , G01N21/9501 , G06T7/0006 , G06T2207/30148
摘要： An inspection apparatus and a method for detecting defects in a substrate having a semiconductor device thereon are provided. The method includes establishing a first inspection region including first patterns repeatedly formed in a first direction and a second inspection region including second patterns repeatedly formed in a second direction on the substrate, determining a first unit inspection size of the first inspection region and a second unit inspection size of the second inspection region, obtaining images of the first and second patterns by moving the substrate in the first direction, and detecting defects in the first and second inspection regions by comparing the obtained images of portions of the first and second inspection regions, respectively, with each other. The first inspection size and second inspection size function as comparison units if defects are detected. The substrate may face an image receiving member.
摘要翻译：提供一种用于检测其上具有半导体器件的衬底中的缺陷的检查装置和方法。该方法包括建立包括在第一方向上重复形成的第一图案的第一检查区域和包括在基板上沿第二方向重复形成的第二图案的第二检查区域，确定第一检查区域的第一单位检查尺寸和第二单元检查区域第二检查区域的检查尺寸，通过沿第一方向移动基板获得第一图案和第二图案的图像，并且通过比较获得的第一和第二检查区域的部分的图像来检测第一和第二检查区域中的缺陷，分别彼此。如果检测到缺陷，则第一检查尺寸和第二检查尺寸用作比较单元。基板可面向图像接收部件。

8. 发明申请

US20080049219A1 WAFER INSPECTING METHOD 有权
标题翻译：波形检测方法
公开(公告)号：US20080049219A1
公开(公告)日：2008-02-28
申请号：US11693356
申请日：2007-03-29
申请人： Ji-Hye Kim , Yu-Sin Yang , Jong-An Kim , Moon-Shik Kang , Ji-Young Shin
发明人： Ji-Hye Kim , Yu-Sin Yang , Jong-An Kim , Moon-Shik Kang , Ji-Young Shin
IPC分类号： G01N21/00
CPC分类号： G01N21/95607 , G01N21/9501 , G01N2021/8864 , G01N2021/8867 , G01N2021/8887
摘要： A wafer inspecting method including the steps of: multi-scanning a pattern image of a unit inspection region in a normal state and a pattern image of a unit inspection region to be inspected, respectively, using different inspection conditions; comparing the multi-scanned pattern images in the normal state with the multi-scanned pattern images to be inspected obtained by the same inspection conditions, and storing differences between the pattern images as difference images; generating a discrimination difference image by calculating a balance between the stored difference images; and discriminating a defect from noise by using the discrimination difference image.
摘要翻译：一种晶片检查方法，包括以下步骤：使用不同的检查条件分别对正常状态下的单位检查区域的图案图像和要检查的单位检查区域的图案图像进行多次扫描; 将正常状态下的多扫描图案图像与通过相同检查条件获得的待检查的多扫描图案图像进行比较，并且将图案图像之间的差异存储为差分图像; 通过计算所存储的差分图像之间的平衡来产生鉴别差异图像; 以及通过使用辨别差异图像来区分缺陷和噪声。

9. 发明申请

US20080172196A1 Method for detecting defects in a substrate having a semiconductor device thereon 失效
标题翻译：用于检测其上具有半导体器件的衬底中的缺陷的方法
公开(公告)号：US20080172196A1
公开(公告)日：2008-07-17
申请号：US12007680
申请日：2008-01-14
申请人： Moon-Shik Kang , Jong-An Kim , Myung-Sub Lee , Yu-Sin Yang , Ji-Hye Kim
发明人： Moon-Shik Kang , Jong-An Kim , Myung-Sub Lee , Yu-Sin Yang , Ji-Hye Kim
IPC分类号： G06F19/00
CPC分类号： G01N21/95607 , G01N21/9501 , G06T7/0006 , G06T2207/30148
摘要： An inspection apparatus and a method for detecting defects in a substrate having a semiconductor device thereon are provided. The method includes establishing a first inspection region including first patterns repeatedly formed in a first direction and a second inspection region including second patterns repeatedly formed in a second direction on the substrate, determining a first unit inspection size of the first inspection region and a second unit inspection size of the second inspection region, obtaining images of the first and second patterns by moving the substrate in the first direction, and detecting defects in the first and second inspection regions by comparing the obtained images of portions of the first and second inspection regions, respectively, with each other. The first inspection size and second inspection size function as comparison units if defects are detected. The substrate may face an image receiving member.
摘要翻译：提供一种用于检测其上具有半导体器件的衬底中的缺陷的检查装置和方法。该方法包括建立包括在第一方向上重复形成的第一图案的第一检查区域和包括在基板上沿第二方向重复形成的第二图案的第二检查区域，确定第一检查区域的第一单位检查尺寸和第二单元检查区域第二检查区域的检查尺寸，通过沿第一方向移动基板获得第一图案和第二图案的图像，并且通过比较获得的第一和第二检查区域的部分的图像来检测第一和第二检查区域中的缺陷，分别彼此。如果检测到缺陷，则第一检查尺寸和第二检查尺寸用作比较单元。基板可面向图像接收部件。

10. 发明授权

US07804591B2 Wafer inspecting method 有权
标题翻译：晶圆检查方法
公开(公告)号：US07804591B2
公开(公告)日：2010-09-28
申请号：US11693356
申请日：2007-03-29
申请人： Ji-Hye Kim , Yu-Sin Yang , Jong-An Kim , Moon-Shik Kang , Ji-Young Shin
发明人： Ji-Hye Kim , Yu-Sin Yang , Jong-An Kim , Moon-Shik Kang , Ji-Young Shin
IPC分类号： G01N21/00
CPC分类号： G01N21/95607 , G01N21/9501 , G01N2021/8864 , G01N2021/8867 , G01N2021/8887
摘要： A wafer inspecting method including the steps of: multi-scanning a pattern image of a unit inspection region in a normal state and a pattern image of a unit inspection region to be inspected, respectively, using different inspection conditions; comparing the multi-scanned pattern images in the normal state with the multi-scanned pattern images to be inspected obtained by the same inspection conditions, and storing differences between the pattern images as difference images; generating a discrimination difference image by calculating a balance between the stored difference images; and discriminating a defect from noise by using the discrimination difference image.
摘要翻译：一种晶片检查方法，包括以下步骤：使用不同的检查条件分别对正常状态下的单位检查区域的图案图像和要检查的单位检查区域的图案图像进行多次扫描; 将正常状态下的多扫描图案图像与通过相同检查条件获得的待检查的多扫描图案图像进行比较，并且将图案图像之间的差异存储为差分图像; 通过计算所存储的差分图像之间的平衡来产生鉴别差异图像; 以及通过使用辨别差异图像来区分缺陷和噪声。

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