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    • 1. 发明授权
    • Connector device for coupling wiper arm
    • 用于连接雨刷臂的连接器装置
    • US08627539B2
    • 2014-01-14
    • US13614614
    • 2012-09-13
    • Jong Wook LeeJeong Goo Lee
    • Jong Wook LeeJeong Goo Lee
    • B60S1/40
    • B60S1/4019B60S2001/4022
    • A connector device for coupling a wiper arm and a wiper blade includes a coupling body, a first support portion provided on an upper surface of the coupling body and extending from the coupling body in a form of a cantilever and for applying an elastic restoration force to the wiper arm, a second support portion provided for supporting the wiper arm in a thicknesswise direction of the wiper arm to prevent the wiper arm from moving in the thicknesswise direction, and a third support portion for preventing the wiper arm from moving in a lengthwise direction of the wiper arm, wherein the second support portion is in a form of a hole with closed upper and lower sides and open front and rear sides.
    • 用于联接雨刷臂和雨刮器的连接器装置包括联接体,第一支撑部分,设置在联接体的上表面上,并且以联接体的形式以悬臂的形式延伸并且用于施加弹性恢复力 刮水器臂,第二支撑部分,其设置用于在雨刷臂的厚度方向上支撑雨刮臂,以防止雨刷臂在厚度方向上移动;第三支撑部分,用于防止雨刷臂沿纵向移动 所述第二支撑部分为具有闭合的上侧和下侧以及敞开的前侧和后侧的孔的形式。
    • 2. 发明申请
    • Connector Device For Coupling Wiper Arm
    • 雨刷臂连接装置
    • US20130152324A1
    • 2013-06-20
    • US13614614
    • 2012-09-13
    • Jong Wook LeeJeong Goo Lee
    • Jong Wook LeeJeong Goo Lee
    • B60S1/40
    • B60S1/4019B60S2001/4022
    • A connector device for coupling a wiper arm and a wiper blade includes a coupling body, a first support portion provided on an upper surface of the coupling body and extending from the coupling body in a form of a cantilever and for applying an elastic restoration force to the wiper arm, a second support portion provided for supporting the wiper arm in a thicknesswise direction of the wiper arm to prevent the wiper arm from moving in the thicknesswise direction, and a third support portion for preventing the wiper arm from moving in a lengthwise direction of the wiper arm, wherein the second support portion is in a form of a hole with closed upper and lower sides and open front and rear sides.
    • 用于联接雨刷臂和雨刮器的连接器装置包括联接体,第一支撑部分,设置在联接体的上表面上,并且以联接体的形式以悬臂的形式延伸并且用于施加弹性恢复力 刮水器臂,第二支撑部分,其设置用于在雨刷臂的厚度方向上支撑雨刮臂,以防止雨刷臂在厚度方向上移动;第三支撑部分,用于防止雨刷臂沿纵向移动 所述第二支撑部分为具有闭合的上侧和下侧以及敞开的前侧和后侧的孔的形式。
    • 3. 发明申请
    • CRASH BOX FOR A VEHICLE
    • 一辆车的垃圾箱
    • US20130154287A1
    • 2013-06-20
    • US13819143
    • 2011-09-08
    • Jong Wook LeeSeung Chang KimChoul Won So
    • Jong Wook LeeSeung Chang KimChoul Won So
    • B60R19/34
    • B60R19/34B60R19/03
    • Disclosed is the outer support member and the inner support member each have a vertical wall and upper and lower horizontal walls. The vertical walls of the outer support member and inner support member are formed on the outer surfaces of the respective support members. The inner edges of the upper and lower horizontal walls are inclined from the rear portions thereof toward front center portions thereof. Thus, the performance of the crash box of the present invention may satisfy the requirements for both an offset test and a barrier test, reduce the weight of the bumper beam assembly to thereby reduce costs, and improve the performance and fuel efficiency of the vehicle.
    • 公开了外支撑构件和内支撑构件,每个具有垂直壁和上下水平壁。 外支撑构件和内支撑构件的垂直壁形成在各支撑构件的外表面上。 上下水平壁的内边缘从其后部朝向其前中心部分倾斜。 因此,本发明的碰撞箱的性能可以满足偏移测试和障碍测试的要求,减小保险杠梁组件的重量,从而降低成本,并且提高车辆的性能和燃料效率。
    • 7. 发明授权
    • Method for fabricating a full depletion type SOI device
    • US06617202B2
    • 2003-09-09
    • US09891530
    • 2001-06-27
    • Jong Wook Lee
    • Jong Wook Lee
    • H01L2100
    • H01L29/78696H01L29/66772
    • Disclosed is a method for SOI device, and particularly to a method for fabricating a full depletion type SOI device capable of minimizing a change in a threshold voltage of transistor according to a change in a thickness of semiconductor layer. The disclosed method for fabricating a full depletion type SOI device comprises: preparing a SOI wafer having a stack structure consisted of a base substrate, a buried oxide film, and a semiconductor layer, forming a dummy gate on an active region of the semiconductor layer, forming source/drain regions on an active region of the semiconductor layer at both sides of the dummy gate, depositing an insulating layer over the dummy gate and the semiconductor layer, polishing the insulating film using the dummy gate as a polishing stop layer, removing the dummy gate, etching a predetermined thickness of semiconductor layer exposed by removing the dummy gate, growing a delta doped silicon film and a silicon film doped in a low concentration on a remaining part of the semiconductor layer, the total thickness thereof being equal to that of the source/drain regions, and forming a gate having a gate oxide film on the silicon film doped in a low concentration.
    • 10. 发明授权
    • Method for fabricating semiconductor device
    • 制造半导体器件的方法
    • US06168979A
    • 2001-01-02
    • US09348572
    • 1999-07-07
    • Hyung Ki KimJong Wook Lee
    • Hyung Ki KimJong Wook Lee
    • H01L2972
    • H01L27/1203H01L21/84
    • Disclosed is a semiconductor device having low voltage characteristic and advantageous integrity simultaneously. The semiconductor device comprises a silicon-on-insulator (SOI) substrate of a stack structure comprising a base layer as a means for supporting, a buried oxide layer, and a semiconductor layer providing an active region; and a first transistor and a second transistor formed on the active region of the SOI substrate, wherein the first and second transistors are formed as a stack structure on one active region and they share one gate electrode, a drain region of the second transistor is electrically connected to the gate electrode and a source region of the second transistor is electrically connected to the active region.
    • 公开了具有低电压特性和有利完整性的半导体器件。 半导体器件包括堆叠结构的绝缘体上硅(SOI)衬底,其包括作为支撑的器件的基底层,掩埋氧化物层和提供有源区的半导体层; 以及形成在所述SOI衬底的有源区上的第一晶体管和第二晶体管,其中所述第一和第二晶体管形成为在一个有源区上的堆叠结构,并且它们共享一个栅电极,所述第二晶体管的漏区电 连接到栅电极,并且第二晶体管的源极区域电连接到有源区。