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1. 发明专利

JP2003011203A Synthetic resin tube manufacturing apparatus and synthetic resin tube 有权
标题翻译：合成树脂管制造设备和合成树脂管
公开(公告)号：JP2003011203A
公开(公告)日：2003-01-15
申请号：JP2002061617
申请日：2002-03-07
申请人： Jung Ja Jeon , Hyung Ki Kim , ジョンザジョン , 衡起金
发明人： KIM HYUNG KI , JEON JUNG JA
IPC分类号： G02B6/46 , B29C47/02 , B29C47/06 , B29C47/20 , B29C47/28 , B29C47/30 , B29C47/92 , B29K101/12 , B29L23/00 , F16L9/19 , F16L11/11
CPC分类号： F16L9/19 , B29C47/0023 , B29C47/0028 , B29C47/0033 , B29C47/0052 , B29C47/027 , B29C47/065 , B29C47/12 , B29C47/28 , B29C47/92 , B29C2947/92514 , B29C2947/92571 , B29C2947/9259 , B29C2947/926 , B29C2947/92647 , B29C2947/92904 , B29C2947/92923 , B29L2023/186 , B29L2031/60
摘要： PROBLEM TO BE SOLVED: To provide a synthetic resin tube manufacturing apparatus capable of forming a plurality of inner tubes and an outer tube covering them at the same time, and the synthetic resin tube. SOLUTION: The synthetic resin tube manufacturing apparatus has a first pressure extruder 10 having a plurality of first dies 18 arranged in the vicinity of the circumference of a circle having a predetermined diameter to form at least one or more inner tubes, a first cooler 20 arranged so as to be continued to the first pressure extruder 10 to cool the inner tubes by water, a guide 60 arranged so as to be continued to the first cooler 20 to receive a plurality of the inner tubes 1, a second pressure extruder 30 having a second die 38 for forming the outer tube 2 provided to the leading end of the guide, a third die 44 provided so as to be continued to the second pressure extruder 30 to form a bellows to the main wall of the outer tube 2 extruded through the second die 38 under pressure and a second cooler 40 for cooling the outer tube 2 by water.
摘要翻译：要解决的问题：提供能够同时形成多个内管和外管的合成树脂管制造装置和合成树脂管。解决方案：合成树脂管制造装置具有第一压力挤出机10，其具有布置在具有预定直径的圆周的附近的多个第一模具18，以形成至少一个或多个内管，第一冷却器20布置以便继续到第一压力挤出机10以通过水冷却内管;导向件60，布置成连续到第一冷却器20以容纳多个内管1;第二压力挤出机30，其具有用于形成设置在引导件的前端的外管2的第二模具38，设置成连续到第二压力挤压机30的第三模具44，以形成通过所述第二挤出机30挤出的外管2的主壁的波纹管在压力下的第二模具38和用于通过水冷却外管2的第二冷却器40。

2. 发明申请

US20110120736A1 FIRE SAFETY APPARATUS FOR HIGH-PRESSURE GAS STORAGE SYSTEM 审中-公开
标题翻译：用于高压气体储存系统的消防安全装置
公开(公告)号：US20110120736A1
公开(公告)日：2011-05-26
申请号：US12752655
申请日：2010-04-01
申请人： Hoon Hui Lee , Ki Ho Hwang , Hyung Ki Kim , Sang Hyun Kim
发明人： Hoon Hui Lee , Ki Ho Hwang , Hyung Ki Kim , Sang Hyun Kim
IPC分类号： A62C3/06
CPC分类号： A62C3/06
摘要： The present invention provides a fire safety apparatus for a high-pressure gas storage system which can suitably ensure the fire safety of the high-pressure tank. Preferably, a flame transfer member having superior flammability is provided outside the high-pressure tank having a tank valve on a first end thereof. The flame transfer member extends a second end of the high-pressure tank to the tank valve, so that when a fire occurs, the flame transfer member rapidly burns creating flames and transfers heat from the origin of the fire to a PRD (pressure relief device) provided on the tank valve.
摘要翻译：本发明提供一种能够适当地确保高压罐的消防安全的高压气体存储系统的消防安全装置。优选地，具有优异的可燃性的火焰传递构件设置在其第一端上具有罐阀的高压罐的外部。火焰传递构件将高压罐的第二端延伸到罐阀，使得当发生火灾时，火焰传递构件快速燃烧产生火焰并将热量从火源传递到PRD（压力释放装置）。

3. 发明申请

US20100167155A1 Hydrogen supply system for fuel cell 有权
标题翻译：燃料电池用氢系统
公开(公告)号：US20100167155A1
公开(公告)日：2010-07-01
申请号：US11999370
申请日：2007-12-04
申请人： Sang Hyun Kim , Hoon Hee Lee , Hyung Ki Kim
发明人： Sang Hyun Kim , Hoon Hee Lee , Hyung Ki Kim
IPC分类号： H01M8/24
CPC分类号： H01M8/04201 , F17C5/06 , F17C11/005 , F17C2221/012 , H01M8/04089 , H01M8/04216 , Y02E60/321 , Y10T137/4673 , Y10T137/469
摘要： The present invention provides a hydrogen supply system for a fuel cell which can compensate for a change in temperature, caused by heat generated when a high pressure tank is charged and discharged with hydrogen, using a metal hydride (MH) tank providing high hydrogen storage density, mounted in the high pressure tank such that hydrogen is to be discharged from the MH tank when hydrogen is charged to the high pressure tank, and hydrogen is to be charged to the MH tank when hydrogen is discharged from the high pressure tank.For this, the present invention provides a hydrogen supply system for a fuel cell, including: a high pressure tank which is capable of storing hydrogen received from a hydrogen refueling station and includes a metal hydride (MH) tank capable of storing hydrogen, mounted therein; first and second solenoid valves provided at both ends of the high pressure tank; a buffer tank connected in parallel to the high pressure tank; and a fuel cell stack connected to the buffer tank so that hydrogen from the high pressure tank or the MH tank is supplied to the stack through the buffer tank, wherein the hydrogen is charged from the hydrogen refueling station to the high pressure tank and discharged from the high pressure tank through the first solenoid valve, the hydrogen is charged and discharged to and from the MH tank through the second solenoid valve, the hydrogen is discharged from the MH tank as the first and second solenoid valves are simultaneously opened when the hydrogen is charged to the high pressure tank, and the hydrogen discharged from the MH tank is stored in the buffer tank and then supplied to the fuel cell stack.
摘要翻译：本发明提供了一种用于燃料电池的氢气供应系统，其能够补偿当高压罐用氢气充放电时产生的热引起的温度变化，使用提供高储氢密度的金属氢化物（MH）安装在高压罐中，以便当氢气被充入高压罐时氢从MH储存器中排出，当氢气从高压罐排出时，氢气将被充入MH储罐。为此，本发明提供了一种用于燃料电池的氢气供应系统，包括：高压罐，其能够储存从加氢站接收的氢气，并且包括能够储存氢的金属氢化物（MH）罐，安装在其中 ; 设置在高压罐两端的第一和第二电磁阀; 与高压罐并联连接的缓冲罐; 以及连接到缓冲罐的燃料电池堆，使得来自高压罐或MH箱的氢气通过缓冲罐被供应到堆叠，其中氢气从加氢站被加载到高压罐并从高压罐通过第一电磁阀，氢气通过第二电磁阀向MH箱充放电，当氢气为氢时，第一和第二电磁阀同时打开时氢从MH箱排出充入高压罐，从MH箱排出的氢气储存在缓冲罐中，然后供给到燃料电池堆。

4. 发明授权

US07101783B2 Method for forming bit-line of semiconductor device 有权
标题翻译：形成半导体器件位线的方法
公开(公告)号：US07101783B2
公开(公告)日：2006-09-05
申请号：US10879299
申请日：2004-06-30
申请人： Hyung Ki Kim
发明人： Hyung Ki Kim
IPC分类号： H01L21/4763
CPC分类号： H01L21/32051 , H01L27/10888 , H01L27/10894
摘要： Disclosed is a method for forming a bit-line of a semiconductor device. In a line patterning process for forming a bit-line in a DRAM (Dynamic Random Access Memory) of a semiconductor device, a barrier metal layer and a tungsten layer are sequentially formed on an interlayer insulating film comprising a contact hole to fill the contact hole by a CVD (Chemical Vapor Deposition) method. Then, the barrier metal layer and the tungsten layer are removed until the interlayer insulating film is exposed, and a tungsten layer having small thickness is re-formed on the exposed interlayer insulating film by a PVD (physical Vapor Deposition) method. As a result, the bit-line area is reduced as much as the barrier metal layer removed from the upper portion of interlayer insulating film, thereby having low bit-line capacitance.
摘要翻译：公开了一种形成半导体器件的位线的方法。在用于在半导体器件的DRAM（动态随机存取存储器）中形成位线的线图案化工艺中，阻挡金属层和钨层依次形成在包括接触孔的层间绝缘膜上以填充接触孔通过CVD（化学气相沉积）法。然后，去除阻挡金属层和钨层，直到层间绝缘膜露出，并且通过PVD（物理气相沉积）方法在暴露的层间绝缘膜上重新形成厚度小的钨层。结果，位线区域与从层间绝缘膜的上部去除的阻挡金属层一样减少，从而具有低的位线电容。

5. 发明授权

US08886405B2 Apparatus for supplying power to transmitter of fuel cell vehicle 有权
标题翻译：用于向燃料电池车辆的发射机供电的装置
公开(公告)号：US08886405B2
公开(公告)日：2014-11-11
申请号：US13189955
申请日：2011-07-25
申请人： Hyung Ki Kim , Sang Hyun Kim , Jihyun Shim
发明人： Hyung Ki Kim , Sang Hyun Kim , Jihyun Shim
IPC分类号： B60G17/0185 , B60W20/00 , B60K37/06 , H01M16/00 , B60L11/18 , H01M8/04
CPC分类号： H01M16/006 , B60L11/1892 , H01M8/04201 , H01M8/04208 , H01M8/04373 , H01M8/04425 , H01M2250/20 , Y02E60/50 , Y02T90/32 , Y02T90/34
摘要： A power supply apparatus for a fuel cell vehicle, and provides a power supply apparatus of a fuel cell vehicle. More specifically, an InfraRed (IR) data transmitter transmits and receives data to/from a hydrogen charger and a power supply apparatus, that is connected to the IR data transmitter, selectively supplies power thereto according to the opening/closing of a fuel door. In particular, a sensing apparatus is connected to the power supply apparatus and senses opening/closing of the fuel door and a normal power source that is connected to the sensing apparatus for opening/closing the fuel door selectively supplies power to the sensing apparatus when the normal power source is off.
摘要翻译：一种燃料电池车辆用电源装置，提供燃料电池车辆的供电装置。更具体地说，红外线（IR）数据发射机与氢充电器和连接到IR数据发射器的电源装置发送和接收数据，根据燃料门的打开/关闭有选择地向其供电。特别地，感测装置连接到电源装置并且感测燃料门的打开/关闭，并且连接到用于打开/关闭燃料门的感测装置的正常电源选择性地向传感装置供电，当该正常电源关闭。

6. 发明授权

US07071059B1 Method for forming recess gate of semiconductor device 失效
标题翻译：半导体器件凹槽形成方法
公开(公告)号：US07071059B1
公开(公告)日：2006-07-04
申请号：US11148557
申请日：2005-06-09
申请人： Hyung Ki Kim
发明人： Hyung Ki Kim
IPC分类号： H01L21/336
CPC分类号： H01L29/7834 , H01L21/76834 , H01L21/76895 , H01L21/76897 , H01L21/823437 , H01L29/66636
摘要： A method for forming a recess gate of a semiconductor device is disclosed. The method for forming a recess gate of a semiconductor device comprises forming a polysilicon layer pattern covering a contact region on a semiconductor substrate, etching a predetermined thickness of the semiconductor substrate in the active region using the polysilicon layer pattern as an etching mask to form a recess gate region, and forming and patterning the gate polysilicon layer, the gate conductive layer and the gate hard mask layer to form a recess gate.
摘要翻译：公开了一种用于形成半导体器件的凹槽的方法。形成半导体器件的凹槽的方法包括形成覆盖半导体衬底上的接触区域的多晶硅层图案，使用多晶硅层图案作为蚀刻掩模蚀刻有源区中的半导体衬底的预定厚度，以形成并且形成和构图栅极多晶硅层，栅极导电层和栅极硬掩模层以形成凹陷栅极。

7. 外观设计

USD499220S1 Vacuum cleaner 失效
公开(公告)号：USD499220S1
公开(公告)日：2004-11-30
申请号：US29190082
申请日：2003-09-16
申请人： Hyung Ki Kim
设计人： Hyung Ki Kim

8. 发明授权

US06348713B1 Method for fabricating semiconductor device 有权
标题翻译：制造半导体器件的方法
公开(公告)号：US06348713B1
公开(公告)日：2002-02-19
申请号：US09577717
申请日：2000-05-23
申请人： Hyung Ki Kim , Jong Wook Lee
发明人： Hyung Ki Kim , Jong Wook Lee
IPC分类号： H01L2701
CPC分类号： H01L27/1203 , H01L21/84
摘要： Disclosed is a semiconductor device having low voltage characteristic and advantageous integrity simultaneously. The semiconductor device comprises a silicon-on-insulator (SOI) substrate of a stack structure comprising a base layer as a means for supporting, a buried oxide layer, and a semiconductor layer providing an active region; and a first transistor and a second transistor formed on the active region of the SOI substrate, wherein the first and second transistors are formed as a stack structure on one active region and they share one gate electrode, a drain region of the second transistor is electrically connected to the gate electrode and a source region of the second transistor is electrically connected to the active region.

9. 外观设计

USD607160S1 Vacuum cleaner 有权
公开(公告)号：USD607160S1
公开(公告)日：2009-12-29
申请号：US29311416
申请日：2009-03-11
申请人： Sang Min Yu , Hyung Ki Kim
设计人： Sang Min Yu , Hyung Ki Kim

10. 发明申请

US20090272590A1 HYDROGEN STORAGE SYSTEM FOR VEHICLE 审中-公开
标题翻译：车辆储氢系统
公开(公告)号：US20090272590A1
公开(公告)日：2009-11-05
申请号：US12268117
申请日：2008-11-10
申请人： Hyung Ki Kim , Sang Hyun Kim , Hoon Hee Lee , Hee Yeon Ryu
发明人： Hyung Ki Kim , Sang Hyun Kim , Hoon Hee Lee , Hee Yeon Ryu
IPC分类号： B60K15/063
CPC分类号： B60K15/03006 , Y02E60/324
摘要： The present invention provides a hydrogen storage system for a vehicle which is readily attachable to and detachable from the vehicle. The hydrogen storage system includes a plurality of hydrogen tanks filled with hydrogen at the outside and is mounted on the top of a rear underfloor of the vehicle in the form of a cartridge.For this purpose, the present invention provides a hydrogen storage system for a vehicle, including a hydrogen storage housing, accommodating a hydrogen storage material filled with hydrogen at the outside and easily attached to and detached from the vehicle using a quick connector.
摘要翻译：本发明提供一种车辆的氢气储存系统，其易于附接到车辆上并可从车辆拆卸。氢存储系统包括在外部填充有氢的多个氢气罐，并且以盒的形式安装在车辆的后地板的顶部上。为此，本发明提供了一种用于车辆的氢存储系统，其包括储氢壳体，其容纳使用快速连接器容易地附接到车辆并从车辆拆卸的在外部填充氢的储氢材料。

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