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1. 发明授权

US08822338B2 CVD apparatus and method of forming semiconductor superlattice structure using the same 有权
标题翻译： CVD装置及使用其形成半导体超晶格结构的方法
公开(公告)号：US08822338B2
公开(公告)日：2014-09-02
申请号：US13276729
申请日：2011-10-19
申请人： Jong Sun Maeng , Ki Sung Kim , Bum Joon Kim , Suk Ho Yoon , Hyun Seok Ryu , Sung Tae Kim
发明人： Jong Sun Maeng , Ki Sung Kim , Bum Joon Kim , Suk Ho Yoon , Hyun Seok Ryu , Sung Tae Kim
IPC分类号： H01L21/44
CPC分类号： C23C16/303 , C23C16/45574 , C23C16/45578 , H01L21/0254 , H01L21/0262 , H01L33/007
摘要： Provided is a chemical vapor deposition (CVD) apparatus, including: a reaction chamber including an inner pipe having an internal space, and an external pipe configured to cover the inner pipe so as to maintain a sealing state thereof; a wafer holder disposed within the inner pipe and receiving a plurality of wafers stacked therein; and a gas supplier including at least one stem pipe disposed at the outside of the reaction chamber so as to supply a reactive gas thereto, a plurality of branch pipes connected to the stem pipe to introduce the reactive gas from the outside of the reaction chamber into the reaction chamber, and a plurality of spray nozzles provided with the branch pipes to spray the reactive gas to the plurality of respective wafers.
摘要翻译：提供了一种化学气相沉积（CVD）装置，包括：反应室，包括具有内部空间的内管，以及外管，其构造成覆盖内管以保持其密封状态; 设置在所述内管内并且容纳堆叠在其中的多个晶片的晶片保持器; 以及气体供给器，其包括设置在反应室外侧的至少一个杆管，以便向其供应反应性气体;多个分支管，连接到杆管，以将反应气体从反应室的外部引入到反应室，以及设置有分支管的多个喷嘴，以将反应气体喷射到多个相应的晶片。

2. 发明申请

US20120171815A1 CVD APPARATUS AND METHOD OF FORMING SEMICONDUCTOR SUPERLATTICE STRUCTURE USING THE SAME 有权
标题翻译： CVD装置和使用其形成半导体超导结构的方法
公开(公告)号：US20120171815A1
公开(公告)日：2012-07-05
申请号：US13276729
申请日：2011-10-19
申请人： Jong Sun MAENG , Ki Sung Kim , Bum Joon Kim , Suk Ho Yoon , Hyun Seok Ryu , Sung Tae Kim
发明人： Jong Sun MAENG , Ki Sung Kim , Bum Joon Kim , Suk Ho Yoon , Hyun Seok Ryu , Sung Tae Kim
IPC分类号： H01L21/50 , C23C16/458 , C23C16/455
CPC分类号： C23C16/303 , C23C16/45574 , C23C16/45578 , H01L21/0254 , H01L21/0262 , H01L33/007
摘要： Provided is a chemical vapor deposition (CVD) apparatus, including: a reaction chamber including an inner pipe having an internal space, and an external pipe configured to cover the inner pipe so as to maintain a sealing state thereof; a wafer holder disposed within the inner pipe and receiving a plurality of wafers stacked therein; and a gas supplier including at least one stem pipe disposed at the outside of the reaction chamber so as to supply a reactive gas thereto, a plurality of branch pipes connected to the stem pipe to introduce the reactive gas from the outside of the reaction chamber into the reaction chamber, and a plurality of spray nozzles provided with the branch pipes to spray the reactive gas to the plurality of respective wafers.
摘要翻译：提供了一种化学气相沉积（CVD）装置，包括：反应室，包括具有内部空间的内管，以及外管，其构造成覆盖内管以保持其密封状态; 设置在所述内管内并且容纳堆叠在其中的多个晶片的晶片保持器; 以及气体供给器，其包括设置在反应室外侧的至少一个杆管，以便向其供应反应性气体;多个分支管，连接到杆管，以将反应气体从反应室的外部引入到反应室，以及设置有分支管的多个喷嘴，以将反应气体喷射到多个相应的晶片。

3. 发明授权

US08859314B2 Method of manufacturing semiconductor light emitting device 有权
标题翻译：制造半导体发光器件的方法
公开(公告)号：US08859314B2
公开(公告)日：2014-10-14
申请号：US13523571
申请日：2012-06-14
申请人： Jong Sun Maeng , Ki Ho Park , Bum Joon Kim , Hyun Seok Ryu , Jung Hyun Lee , Boung Kyun Kim , Ki Sung Kim , Suk Ho Yoon
发明人： Jong Sun Maeng , Ki Ho Park , Bum Joon Kim , Hyun Seok Ryu , Jung Hyun Lee , Boung Kyun Kim , Ki Sung Kim , Suk Ho Yoon
IPC分类号： H01L33/32 , H01L33/00
CPC分类号： H01L33/007 , H01L21/67109 , H01L21/68764 , H01L21/68771 , H01L33/0079
摘要： There is provided a method of manufacturing a semiconductor light emitting device, the method including: sequentially growing a first conductivity type semiconductor layer, an active layer, and a second conductivity type semiconductor layer on a semiconductor growth substrate to form a light emitting part; forming a support part on the second conductivity type semiconductor layer to be coupled to the light emitting part; separating the semiconductor growth substrate from the light emitting part; and applying an etching gas to the semiconductor growth substrate to remove a residue of the first conductivity type semiconductor layer from a surface of the semiconductor growth substrate.
摘要翻译：提供一种制造半导体发光器件的方法，该方法包括：在半导体生长衬底上依次生长第一导电类型半导体层，有源层和第二导电类型半导体层，以形成发光部分; 在要耦合到所述发光部分的所述第二导电类型半导体层上形成支撑部分; 将半导体生长衬底与发光部分分离; 以及向所述半导体生长衬底施加蚀刻气体以从所述半导体生长衬底的表面去除所述第一导电类型半导体层的残留物。

4. 发明申请

US20130020555A1 NITRIDE-BASED SEMICONDUCTOR LIGHT EMITING DEVICE 有权
标题翻译：基于氮化物的半导体照明器件
公开(公告)号：US20130020555A1
公开(公告)日：2013-01-24
申请号：US13555370
申请日：2012-07-23
申请人： Jong Sun Maeng , Bum Joon Kim , Ki Sung Kim , Suk Ho Yoon , Sung Tae Kim
发明人： Jong Sun Maeng , Bum Joon Kim , Ki Sung Kim , Suk Ho Yoon , Sung Tae Kim
IPC分类号： H01L33/04
CPC分类号： H01L33/32 , H01L33/02 , H01L33/12
摘要： A nitride-based semiconductor light emitting device includes an anti-bowing layer having a composition of AlxGa1-xN (0.01≦x≦0.04), and a light emitting structure formed on the anti-bowing layer and including a first conductivity-type nitride semiconductor layer, an active layer, and a second conductivity-type nitride semiconductor layer.
摘要翻译：氮化物系半导体发光元件包括具有Al x Ga 1-x N（0.01＆amp; N e; x＆amp; In; 0.04）的组成的抗弯曲层，以及形成在抗弯曲层上并包括第一导电型氮化物半导体层，有源层和第二导电型氮化物半导体层。

5. 发明授权

US08884269B2 Nitride-based semiconductor light emitting device 有权
标题翻译：基于氮化物的半导体发光器件
公开(公告)号：US08884269B2
公开(公告)日：2014-11-11
申请号：US13555370
申请日：2012-07-23
申请人： Jong Sun Maeng , Bum Joon Kim , Ki Sung Kim , Suk Ho Yoon , Sung Tae Kim
发明人： Jong Sun Maeng , Bum Joon Kim , Ki Sung Kim , Suk Ho Yoon , Sung Tae Kim
IPC分类号： H01L29/06 , H01L31/00 , H01L33/32 , H01L33/12 , H01L33/02
CPC分类号： H01L33/32 , H01L33/02 , H01L33/12
摘要： A nitride-based semiconductor light emitting device includes an anti-bowing layer having a composition of AlxGa1-xN (0.01≦x≦0.04), and a light emitting structure formed on the anti-bowing layer and including a first conductivity-type nitride semiconductor layer, an active layer, and a second conductivity-type nitride semiconductor layer.
摘要翻译：氮化物系半导体发光元件包括具有Al x Ga 1-x N（0.01＆amp; N e; x＆amp; In; 0.04）的组成的抗弯曲层，以及形成在抗弯曲层上并包括第一导电型氮化物半导体层，有源层和第二导电型氮化物半导体层。

6. 发明申请

US20120097184A1 METHOD FOR RECYCLING WAFER 审中-公开
标题翻译：回收方法
公开(公告)号：US20120097184A1
公开(公告)日：2012-04-26
申请号：US13275099
申请日：2011-10-17
申请人： Ki Ho PARK , Kong Tan Sa , Suk Ho Yoon , Hyun Seok Ryu , Bo A Shin
发明人： Ki Ho PARK , Kong Tan Sa , Suk Ho Yoon , Hyun Seok Ryu , Bo A Shin
IPC分类号： H01L21/02 , B08B5/00
CPC分类号： H01L21/02032
摘要： A method for recycling a wafer is provided. The method removes residues remaining on the wafer separated from a semiconductor layer, using HCl and Cl2 gases under high temperature and low pressure conditions. According to the method, damage of a surface of the wafer is minimized. In addition, since reduction in thickness and an outer diameter of the wafer is minimized, a number of attempts at reprocessing the wafer may be increased.
摘要翻译：提供一种再循环晶片的方法。该方法使用HCl和Cl2气体在高温和低压条件下除去剩余在半导体层上残留的晶片上的残留物。根据该方法，使晶片表面的损伤最小化。此外，由于晶片的厚度和外径的减小被最小化，所以可以增加重新处理晶片的尝试次数。

7. 发明授权

US08643037B2 Nitride semiconductor light emitting device 有权
标题翻译：氮化物半导体发光器件
公开(公告)号：US08643037B2
公开(公告)日：2014-02-04
申请号：US13441562
申请日：2012-04-06
申请人： Hyun Wook Shim , Suk Ho Yoon , Tan Sakong , Je Won Kim , Ki Sung Kim
发明人： Hyun Wook Shim , Suk Ho Yoon , Tan Sakong , Je Won Kim , Ki Sung Kim
IPC分类号： H01L33/32
CPC分类号： H01L33/04 , H01L33/32
摘要： There is provided a nitride semiconductor light emitting device including: n-type and p-type nitride semiconductor layers; an active layer disposed between the n-type and p-type nitride semiconductor layers; and an electron injection layer disposed between the n-type nitride semiconductor layer and the active layer. The electron injection layer has a multilayer structure, in which three or more layers having different energy band gaps are stacked, and the multilayer structure is repetitively stacked at least twice. At least one layer among the three or more layers has a reduced energy band gap in individual multilayer structures in a direction toward the active layer, and the layer having the lowest energy band gap has an increased thickness in individual multilayer structures in a direction toward the active layer.
摘要翻译：提供了一种氮化物半导体发光器件，包括：n型和p型氮化物半导体层; 设置在n型和p型氮化物半导体层之间的有源层; 以及设置在n型氮化物半导体层和有源层之间的电子注入层。电子注入层具有多层结构，其中堆叠具有不同能带隙的三层或更多层，多层结构重复堆叠至少两次。三层或更多层中的至少一层在朝向有源层的方向上在单个多层结构中具有减小的能带隙，并且具有最低能带隙的层在朝着该层的方向的单个多层结构中具有增加的厚度活动层

8. 发明申请

US20110012145A1 GaN-BASED SEMICONDUCTOR LIGHT EMITTING DEVICE 有权
标题翻译：基于GaN的半导体发光器件
公开(公告)号：US20110012145A1
公开(公告)日：2011-01-20
申请号：US12890361
申请日：2010-09-24
申请人： Tan SAKONG , Cheol Soo Sone , Ho Sun Paek , Suk Ho Yoon , Jeong Wook Lee
发明人： Tan SAKONG , Cheol Soo Sone , Ho Sun Paek , Suk Ho Yoon , Jeong Wook Lee
IPC分类号： H01L33/30
CPC分类号： H01L33/12 , H01L21/0254 , H01L33/06 , H01L33/34
摘要： There is provided a GaN-based semiconductor light emitting device including: a substrate; and an n-type GaN-based semiconductor layer, an active layer and a p-type GaN-based semiconductor layer sequentially deposited on the substrate, wherein the active layer includes: a first barrier layer including AlxInyGa1-x-yN, where 0
摘要翻译：提供一种GaN基半导体发光器件，包括：衬底; 以及依次沉积在所述衬底上的n型GaN基半导体层，有源层和p型GaN基半导体层，其中所述有源层包括：包含Al x In y Ga 1-x-y N的第一势垒层， x <1,0

9. 发明授权

US07868316B2 Nitride semiconductor device 有权
标题翻译：氮化物半导体器件
公开(公告)号：US07868316B2
公开(公告)日：2011-01-11
申请号：US12350188
申请日：2009-01-07
申请人： Suk Ho Yoon , Ki Ho Park , Joong Kon Son
发明人： Suk Ho Yoon , Ki Ho Park , Joong Kon Son
IPC分类号： H01L33/06
CPC分类号： H01L33/06
摘要： There is provided a nitride semiconductor device. A nitride semiconductor device according to an aspect of the invention may include: an n-type nitride semiconductor layer; a p-type nitride semiconductor layer; an active layer provided between the n-type and p-type nitride semiconductor layers and having quantum well layers and quantum barrier layers alternately stacked on each other; and an electron blocking layer provided between the active layer and the p-type nitride semiconductor layer, and having a plurality of first nitride layers formed of a material having a higher band gap energy than the quantum barrier layers and a plurality of second nitride layers formed of a material having a lower band gap energy than the first nitride layers, the first and second nitride layers alternately stacked on each other to form a stacked structure, wherein the plurality of first nitride layers have energy levels bent at predetermined inclinations, and with greater proximity to the p-type nitride semiconductor layer, the first nitride layers have a smaller inclination of the energy level.
摘要翻译：提供一种氮化物半导体器件。根据本发明的一个方面的氮化物半导体器件可以包括：n型氮化物半导体层; p型氮化物半导体层; 设置在n型和p型氮化物半导体层之间并且具有彼此交替堆叠的量子阱层和量子势垒层的有源层; 以及设置在有源层和p型氮化物半导体层之间的电子阻挡层，并且具有由具有比量子势垒层更高的带隙能量的材料形成的多个第一氮化物层和形成的多个第二氮化物层具有比第一氮化物层低的带隙能量的材料，第一和第二氮化物层彼此交替堆叠以形成堆叠结构，其中多个第一氮化物层具有以预定倾斜度弯曲的能级，并且具有更大的靠近p型氮化物半导体层，第一氮化物层具有较小的能级倾斜度。

10. 发明授权

US08378381B2 GaN-based semiconductor light emitting device 有权
标题翻译： GaN系半导体发光元件
公开(公告)号：US08378381B2
公开(公告)日：2013-02-19
申请号：US12890361
申请日：2010-09-24
申请人： Tan Sakong , Cheol Soo Sone , Ho Sun Paek , Suk Ho Yoon , Jeong Wook Lee
发明人： Tan Sakong , Cheol Soo Sone , Ho Sun Paek , Suk Ho Yoon , Jeong Wook Lee
IPC分类号： H01L33/32
CPC分类号： H01L33/12 , H01L21/0254 , H01L33/06 , H01L33/34
摘要： There is provided a GaN-based semiconductor light emitting device including: a substrate; and an n-type GaN-based semiconductor layer, an active layer and a p-type GaN-based semiconductor layer sequentially deposited on the substrate, wherein the active layer includes: a first barrier layer including AlxInyGa1-x-yN, where 0
摘要翻译：提供一种GaN基半导体发光器件，包括：衬底; 以及依次沉积在所述衬底上的n型GaN基半导体层，有源层和p型GaN基半导体层，其中所述有源层包括：包含Al x In y Ga 1-x-y N的第一势垒层， x <1,0

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