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1. 发明授权

US08859314B2 Method of manufacturing semiconductor light emitting device 有权
标题翻译：制造半导体发光器件的方法
公开(公告)号：US08859314B2
公开(公告)日：2014-10-14
申请号：US13523571
申请日：2012-06-14
申请人： Jong Sun Maeng , Ki Ho Park , Bum Joon Kim , Hyun Seok Ryu , Jung Hyun Lee , Boung Kyun Kim , Ki Sung Kim , Suk Ho Yoon
发明人： Jong Sun Maeng , Ki Ho Park , Bum Joon Kim , Hyun Seok Ryu , Jung Hyun Lee , Boung Kyun Kim , Ki Sung Kim , Suk Ho Yoon
IPC分类号： H01L33/32 , H01L33/00
CPC分类号： H01L33/007 , H01L21/67109 , H01L21/68764 , H01L21/68771 , H01L33/0079
摘要： There is provided a method of manufacturing a semiconductor light emitting device, the method including: sequentially growing a first conductivity type semiconductor layer, an active layer, and a second conductivity type semiconductor layer on a semiconductor growth substrate to form a light emitting part; forming a support part on the second conductivity type semiconductor layer to be coupled to the light emitting part; separating the semiconductor growth substrate from the light emitting part; and applying an etching gas to the semiconductor growth substrate to remove a residue of the first conductivity type semiconductor layer from a surface of the semiconductor growth substrate.
摘要翻译：提供一种制造半导体发光器件的方法，该方法包括：在半导体生长衬底上依次生长第一导电类型半导体层，有源层和第二导电类型半导体层，以形成发光部分; 在要耦合到所述发光部分的所述第二导电类型半导体层上形成支撑部分; 将半导体生长衬底与发光部分分离; 以及向所述半导体生长衬底施加蚀刻气体以从所述半导体生长衬底的表面去除所述第一导电类型半导体层的残留物。

2. 发明授权

US08455282B2 Method of manufacturing vertical light emitting diode with dual surface pattern to improve light extraction 有权
标题翻译：制造具有双表面图案的垂直发光二极管的方法，以改善光提取
公开(公告)号：US08455282B2
公开(公告)日：2013-06-04
申请号：US13162254
申请日：2011-06-16
申请人： Ki Sung Kim , Gi Bum Kim , Tae Hun Kim , Young Chul Shin , Young Sun Kim
发明人： Ki Sung Kim , Gi Bum Kim , Tae Hun Kim , Young Chul Shin , Young Sun Kim
IPC分类号： H01L21/00
CPC分类号： H01L33/22 , H01L33/0066 , H01L33/0075 , H01L33/0079 , H01L33/20 , H01L2933/0025 , H01L2933/0091
摘要： A semiconductor light emitting diode (LED) and a manufacturing method thereof are disclosed. The method for manufacturing a semiconductor light emitting diode (LED) includes: forming a light emission structure including a first conductive semiconductor layer, an active layer, and a second conductive semiconductor layer on a substrate with prominences and depressions; removing the substrate from the light emission structure to expose a first concavoconvex portion corresponding to the prominences and depressions; forming a protection layer on the first concavoconvex portion; removing a portion of the protection layer to expose a convex portion of the first concavoconvex portion; and forming a second concavoconvex portion on the convex portion of the first concavoconvex portion. The semiconductor light emitting diode (LED) includes: a light emission structure including a first conductive type semiconductor layer, an active layer, and a second conductive type semiconductor layer; a first concavoconvex portion formed on the light emission structure and having a second concavoconvex portion at a convex portion thereof; and a protection layer filling up a concave portion of the first concavoconvex portion.
摘要翻译：公开了一种半导体发光二极管（LED）及其制造方法。制造半导体发光二极管（LED）的方法包括：在具有突起和凹陷的基板上形成包括第一导电半导体层，有源层和第二导电半导体层的发光结构; 从所述发光结构去除所述衬底以暴露对应于所述突起和凹陷的第一凹凸部分; 在第一凹凸部上形成保护层; 去除所述保护层的一部分以暴露所述第一凹凸部的凸部; 以及在所述第一凹凸部的所述凸部上形成第二凹凸部。半导体发光二极管（LED）包括：包括第一导电类型半导体层，有源层和第二导电类型半导体层的发光结构; 形成在所述发光结构上的第一凹凸部，在其凸部具有第二凹凸部; 以及填充所述第一凹凸部的凹部的保护层。

3. 发明授权

US08321289B2 Method for making use of site activity index and a system thereof 有权
标题翻译：利用场地活动指数的方法及其系统
公开(公告)号：US08321289B2
公开(公告)日：2012-11-27
申请号：US11575491
申请日：2005-10-07
申请人： Ki-Sung Kim
发明人： Ki-Sung Kim
IPC分类号： G06Q30/00
CPC分类号： G06Q30/00 , G06Q30/0641
摘要： Provided are a method and a system for applying site activity indexes by a site activity index applying system connected to a plurality of user terminals through the Internet. In one embodiment, the method includes checking whether a user who is connected to a web site through the Internet desires to buy a game item, checking whether to use the user's site activity indexes so as to buy the game item, checking whether the user possesses site activity indexes, and exchanging the site activity indexes with game items when the user possesses the site activity indexes. With the method and system for applying site activity indexes user loyalty and game participation may be increased.
摘要翻译：提供了一种通过因特网通过连接到多个用户终端的站点活动索引应用系统来应用站点活动索引的方法和系统。在一个实施例中，该方法包括检查通过因特网连接到网站的用户是否希望购买游戏项目，检查是否使用用户的站点活动索引以购买游戏项目，检查用户是否拥有网站活动指标，以及当用户拥有网站活动索引时，使用游戏项目交换网站活动索引。通过应用网站活动指标的方法和系统，可以增加用户忠诚度和游戏参与度。

4. 发明申请

US20120167824A1 CVD APPARATUS 审中-公开
标题翻译： CVD装置
公开(公告)号：US20120167824A1
公开(公告)日：2012-07-05
申请号：US13285596
申请日：2011-10-31
申请人： Jong Sun MAENG , Ki Sung Kim , Bum Joon Kim , Hyun Seok Ryu , Sung Tae Kim
发明人： Jong Sun MAENG , Ki Sung Kim , Bum Joon Kim , Hyun Seok Ryu , Sung Tae Kim
IPC分类号： H01L21/00 , C23C16/458 , C23C16/455
CPC分类号： C23C16/45572 , C23C16/45578
摘要： A chemical vapor deposition (CVD) apparatus, including: a reaction chamber including an internal chamber having an internal space, an external chamber configured to cover the internal chamber so as to maintain a sealing state thereof; a wafer holder disposed within the internal chamber for a plurality of wafers stacked therein; a gas supplier including an inner pipe having an inner path, an external pipe having an external path, a refrigeration pipe having a cooling path. The inner path of the inner pipe supplies a first process gas into the reaction chamber. The external path of the external pipe surrounds the inner pipe to supply a second process gas therethrough. The refrigeration pipe supplies a refrigerant to prevent temperature rise in the inner pipe.
摘要翻译：一种化学气相沉积（CVD）装置，包括：反应室，包括具有内部空间的内部室，外部室，其被构造成覆盖所述内部室以保持其密封状态; 设置在所述内部腔室内用于堆叠在其中的多个晶片的晶片保持器; 包括具有内部路径的内管，具有外部路径的外部管的气体供给器，具有冷却路径的制冷管。内管的内部路径将第一工艺气体供应到反应室中。外部管道的外部路径围绕内部管道以供应通过其中的第二处理气体。制冷管道供应制冷剂以防止内管中的温度上升。

5. 发明申请

US20120164347A1 SUSCEPTOR FOR CVD APPARATUS, CVD APPARATUS AND SUBSTRATE HEATING METHOD USING THE SAME 审中-公开
标题翻译： CVD装置的SUSCEPTOR，CVD装置和使用该装置的基板加热方法
公开(公告)号：US20120164347A1
公开(公告)日：2012-06-28
申请号：US13331737
申请日：2011-12-20
申请人： Do Young RHEE , Jin Young Lim , Sang Heon Han , Ki Sung Kim , Young Sun Kim , Sung Tae Kim
发明人： Do Young RHEE , Jin Young Lim , Sang Heon Han , Ki Sung Kim , Young Sun Kim , Sung Tae Kim
IPC分类号： C23C16/458 , C08J7/18 , B05C13/02
CPC分类号： H01L21/68757 , H01L21/68771
摘要： Provided are a susceptor for a chemical vapor deposition (CVD) apparatus, including: a susceptor body having an upper surface opposed to a lower surface thereof and formed of a light transmitting material, the upper surface thereof having at least one pocket part formed to receive a substrate therein; and a light absorbing unit formed of a light absorbing material on the upper surface of the susceptor body.
摘要翻译：提供一种用于化学气相沉积（CVD）设备的感受体，包括：基座主体，其具有与其下表面相对的上表面并由透光材料形成，其上表面具有形成为接收的至少一个凹部其中的基板; 以及由感光体的上表面上的吸光材料形成的光吸收单元。

6. 外观设计

USD626525S1 Mobile phone 有权
公开(公告)号：USD626525S1
公开(公告)日：2010-11-02
申请号：US29339862
申请日：2009-07-09
申请人： Ki Sung Kim , Young Keun Lee , Chang Hwan Hwang
设计人： Ki Sung Kim , Young Keun Lee , Chang Hwan Hwang

7. 发明授权

US07684454B2 High power vertical cavity surface emitting laser 有权
标题翻译：大功率垂直腔表面发射激光器
公开(公告)号：US07684454B2
公开(公告)日：2010-03-23
申请号：US11448839
申请日：2006-06-08
申请人： Ki-sung Kim
发明人： Ki-sung Kim
IPC分类号： H01S5/00
CPC分类号： H01S5/141 , H01S5/041 , H01S5/183
摘要： An improved VECSEL device is provided in which the gain of each of the quantum well layers can be increased in a periodic gain structure. A vertical external cavity surface emitting laser (VECSEL) device comprising: a substrate; a bottom DBR mirror formed on the substrate; a multiple quantum well layer formed on the bottom DBR mirror and comprising: a plurality of quantum well layers; first and second strain compensation layers sequentially formed above and below each of the quantum well layers to gradually relieve the strain of the quantum well layers; a capping layer formed on the multiple quantum well layer; an optical pump radiating a pump beam to the surface of the capping layer; and an external cavity mirror separated from and facing the bottom DBR mirror.
摘要翻译：提供了一种改进的VECSEL器件，其中可以在周期性增益结构中增加每个量子阱层的增益。一种垂直外腔表面发射激光器（VECSEL）器件，包括：衬底; 形成在基板上的底部DBR镜; 形成在底部DBR反射镜上的多量子阱层，包括：多个量子阱层; 第一和第二应变补偿层，顺序地形成在每个量子阱层之上和之下，以逐渐减轻量子阱层的应变; 形成在所述多量子阱层上的覆盖层; 将泵浦光束辐射到覆盖层的表面的光泵; 以及与底部DBR镜分离并面向底部DBR镜的外部腔镜。

8. 发明申请

US20090285009A1 Nonvolatile memory devices using variable resistive elements 有权
标题翻译：使用可变电阻元件的非易失性存储器件
公开(公告)号：US20090285009A1
公开(公告)日：2009-11-19
申请号：US12453529
申请日：2009-05-14
申请人： Ki-Sung Kim , Byung-Gil Choi , Young-Ran Kim , Jong-Chul Park
发明人： Ki-Sung Kim , Byung-Gil Choi , Young-Ran Kim , Jong-Chul Park
IPC分类号： G11C11/00 , G11C7/00 , G11C5/14
CPC分类号： G11C13/0023 , G11C8/10 , G11C13/0004 , G11C13/0026 , G11C2213/72
摘要： A nonvolatile memory device using a variable resistive element is provided. The nonvolatile memory device may include a memory cell array which includes an array of multiple nonvolatile memory cells having variable resistance levels depending on data stored. Word lines may be coupled with each column of the nonvolatile memory cells. Local bit lines may be coupled with each row of the nonvolatile memory cells. Global bit lines may be selectively coupled with the multiple local bit lines.
摘要翻译：提供了使用可变电阻元件的非易失性存储器件。非易失性存储器件可以包括存储单元阵列，其包括具有取决于存储的数据的可变电阻等级的多个非易失性存储单元的阵列。字线可以与非易失性存储单元的每一列耦合。局部位线可以与非易失性存储器单元的每一行耦合。全局位线可以选择性地与多个局部位线耦合。

9. 外观设计

USD589488S1 Mobile phone 有权
公开(公告)号：USD589488S1
公开(公告)日：2009-03-31
申请号：US29323732
申请日：2008-08-29
申请人： Ki-Sung Kim , Seung-Min Park , Chang-Hwan Hwang
设计人： Ki-Sung Kim , Seung-Min Park , Chang-Hwan Hwang

10. 发明申请

US20090034324A1 NONVOLATILE MEMORY DEVICES THAT INCLUDE A WRITE CIRCUIT THAT WRITES DATA OVER MULTIPLE WRITE PERIODS USING PULSES WHOSE PEAKS DO NOT COINCIDE WITH EACH OTHER 有权
标题翻译：非易失性存储器件，其中包括写入数据的多个写入周期的写入电路，使用峰值不与任何其他值相加的脉冲
公开(公告)号：US20090034324A1
公开(公告)日：2009-02-05
申请号：US12179321
申请日：2008-07-24
申请人： Young-Ran Kim , Ki-Won Lim , Byung-Gil Choi , Ki-Sung Kim
发明人： Young-Ran Kim , Ki-Won Lim , Byung-Gil Choi , Ki-Sung Kim
IPC分类号： G11C7/00 , G11C11/21
CPC分类号： G11C13/0069 , G11C11/5678 , G11C13/0004 , G11C2013/0078 , G11C2013/0092 , G11C2211/5622
摘要： Nonvolatile memory devices include a plurality of nonvolatile memory cells and a write circuit that is operable to write data to the nonvolatile memory cells over a plurality of consecutive division write periods by generating a plurality of write pulses whose peaks do not coincide with one another to the nonvolatile memory cells.
摘要翻译：非易失性存储器件包括多个非易失性存储器单元和写入电路，该写入电路可操作以通过产生多个写入脉冲将数据写入多个连续的分割写入周期，所述写入脉冲的峰值彼此不一致非易失性存储单元。

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