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1. 发明申请

US20110012145A1 GaN-BASED SEMICONDUCTOR LIGHT EMITTING DEVICE 有权
标题翻译：基于GaN的半导体发光器件
公开(公告)号：US20110012145A1
公开(公告)日：2011-01-20
申请号：US12890361
申请日：2010-09-24
申请人： Tan SAKONG , Cheol Soo Sone , Ho Sun Paek , Suk Ho Yoon , Jeong Wook Lee
发明人： Tan SAKONG , Cheol Soo Sone , Ho Sun Paek , Suk Ho Yoon , Jeong Wook Lee
IPC分类号： H01L33/30
CPC分类号： H01L33/12 , H01L21/0254 , H01L33/06 , H01L33/34
摘要： There is provided a GaN-based semiconductor light emitting device including: a substrate; and an n-type GaN-based semiconductor layer, an active layer and a p-type GaN-based semiconductor layer sequentially deposited on the substrate, wherein the active layer includes: a first barrier layer including AlxInyGa1-x-yN, where 0
摘要翻译：提供一种GaN基半导体发光器件，包括：衬底; 以及依次沉积在所述衬底上的n型GaN基半导体层，有源层和p型GaN基半导体层，其中所述有源层包括：包含Al x In y Ga 1-x-y N的第一势垒层， x <1,0

2. 发明申请

US20090200565A1 GaN-BASED SEMICONDUCTOR LIGHT EMITTING DEVICE 有权
标题翻译：基于GaN的半导体发光器件
公开(公告)号：US20090200565A1
公开(公告)日：2009-08-13
申请号：US12251872
申请日：2008-10-15
申请人： Tan Sakong , Cheol Soo Sone , Ho Sun Paek , Suk Ho Yoon , Jeong Wook Lee
发明人： Tan Sakong , Cheol Soo Sone , Ho Sun Paek , Suk Ho Yoon , Jeong Wook Lee
IPC分类号： H01L33/00
CPC分类号： H01L33/12 , H01L21/0254 , H01L33/06 , H01L33/34
摘要： There is provided a GaN-based semiconductor light emitting device including: a substrate; and an n-type GaN-based semiconductor layer, an active layer and a p-type GaN-based semiconductor layer sequentially deposited on the substrate, wherein the active layer includes: a first barrier layer including AlxInyGa1−x−yN, where 0
摘要翻译：提供一种GaN基半导体发光器件，包括：衬底; 以及依次沉积在所述衬底上的n型GaN基半导体层，有源层和p型GaN基半导体层，其中所述有源层包括：包含Al x In y Ga 1-x-y N的第一势垒层， x <1,0

3. 发明授权

US08378381B2 GaN-based semiconductor light emitting device 有权
标题翻译： GaN系半导体发光元件
公开(公告)号：US08378381B2
公开(公告)日：2013-02-19
申请号：US12890361
申请日：2010-09-24
申请人： Tan Sakong , Cheol Soo Sone , Ho Sun Paek , Suk Ho Yoon , Jeong Wook Lee
发明人： Tan Sakong , Cheol Soo Sone , Ho Sun Paek , Suk Ho Yoon , Jeong Wook Lee
IPC分类号： H01L33/32
CPC分类号： H01L33/12 , H01L21/0254 , H01L33/06 , H01L33/34
摘要： There is provided a GaN-based semiconductor light emitting device including: a substrate; and an n-type GaN-based semiconductor layer, an active layer and a p-type GaN-based semiconductor layer sequentially deposited on the substrate, wherein the active layer includes: a first barrier layer including AlxInyGa1-x-yN, where 0
摘要翻译：提供一种GaN基半导体发光器件，包括：衬底; 以及依次沉积在所述衬底上的n型GaN基半导体层，有源层和p型GaN基半导体层，其中所述有源层包括：包含Al x In y Ga 1-x-y N的第一势垒层， x <1,0

4. 发明授权

US07825428B2 GaN-based semiconductor light emitting device 有权
标题翻译： GaN系半导体发光元件
公开(公告)号：US07825428B2
公开(公告)日：2010-11-02
申请号：US12251872
申请日：2008-10-15
申请人： Tan Sakong , Cheol Soo Sone , Ho Sun Paek , Suk Ho Yoon , Jeong Wook Lee
发明人： Tan Sakong , Cheol Soo Sone , Ho Sun Paek , Suk Ho Yoon , Jeong Wook Lee
IPC分类号： H01L33/32
CPC分类号： H01L33/12 , H01L21/0254 , H01L33/06 , H01L33/34
摘要： There is provided a GaN-based semiconductor light emitting device including: a substrate; and an n-type GaN-based semiconductor layer, an active layer and a p-type GaN-based semiconductor layer sequentially deposited on the substrate, wherein the active layer includes: a first barrier layer including AlxInyGa1−x−yN, where 0
摘要翻译：提供一种GaN基半导体发光器件，包括：衬底; 以及依次沉积在所述衬底上的n型GaN基半导体层，有源层和p型GaN基半导体层，其中所述有源层包括：包含Al x In y Ga 1-x-y N的第一势垒层， x <1,0

5. 发明授权

US08039850B2 White light emitting device 有权
标题翻译：白色发光装置
公开(公告)号：US08039850B2
公开(公告)日：2011-10-18
申请号：US12250133
申请日：2008-10-13
申请人： Jeong Wook Lee , Yong Jo Park , Cheol Soo Sone
发明人： Jeong Wook Lee , Yong Jo Park , Cheol Soo Sone
IPC分类号： H01L29/18 , H01L33/00
CPC分类号： H01L25/0753 , H01L33/50 , H01L2224/48091 , H01L2224/49107 , H01L2933/0091 , H01L2924/00014
摘要： There is provided a white light emitting device that prevents a red phosphor from resorbing wavelength-converted light to improve white luminous efficiency. A white light emitting device according to an aspect of the invention includes a package body; at least two LED chips mounted to the package body and emitting excitation light; and a molding unit including phosphors, absorbing the excitation light and emitting wavelength-converted light, in regions of the molding unit divided according to the LED chips and molding the LED chips. According to the aspect of the invention, since the phosphor for converted red light can be prevented from resorbing light generated from other regions of the molding unit, the white light emitting device that can improve white luminous efficiency or control color rendering and color temperature by adjusting a mixing ratio of converted light for white light emission.
摘要翻译：提供了防止红色荧光体再吸收波长转换的光以提高白色发光效率的白色发光装置。根据本发明的一个方面的白色发光器件包括封装体; 至少两个LED芯片安装到封装主体并发射激发光; 以及模制单元，其包括在根据LED芯片划分的模制单元的区域中吸收激发光并发射波长转换的光的荧光体，并且模制LED芯片。根据本发明的方面，由于可以防止用于转换的红光的荧光体吸收由成型单元的其它区域产生的光，所以可以通过调节白光发光器件来提高白色发光效率或控制显色和色温用于白光发射的转换光的混合比。

6. 发明申请

US20090114929A1 WHITE LIGHT EMITTING DEVICE 有权
标题翻译：白光发光装置
公开(公告)号：US20090114929A1
公开(公告)日：2009-05-07
申请号：US12250133
申请日：2008-10-13
申请人： Jeong Wook LEE , Yong Jo Park , Cheol Soo Sone
发明人： Jeong Wook LEE , Yong Jo Park , Cheol Soo Sone
IPC分类号： H01L33/00
CPC分类号： H01L25/0753 , H01L33/50 , H01L2224/48091 , H01L2224/49107 , H01L2933/0091 , H01L2924/00014
摘要： There is provided a white light emitting device that prevents a red phosphor from resorbing wavelength-converted light to improve white luminous efficiency. A white light emitting device according to an aspect of the invention includes a package body; at least two LED chips mounted to the package body and emitting excitation light; and a molding unit including phosphors, absorbing the excitation light and emitting wavelength-converted light, in regions of the molding unit divided according to the LED chips and molding the LED chips. According to the aspect of the invention, since the phosphor for converted red light can be prevented from resorbing light generated from other regions of the molding unit, the white light emitting device that can improve white luminous efficiency or control color rendering and color temperature by adjusting a mixing ratio of converted light for white light emission.
摘要翻译：提供了防止红色荧光体再吸收波长转换的光以提高白色发光效率的白色发光装置。根据本发明的一个方面的白色发光器件包括封装体; 至少两个LED芯片安装到封装主体并发射激发光; 以及模制单元，其包括在根据LED芯片划分的模制单元的区域中吸收激发光并发射波长转换的光的荧光体，并且模制LED芯片。根据本发明的方面，由于可以防止用于转换的红光的荧光体吸收由成型单元的其它区域产生的光，所以可以通过调节白光发光器件来提高白色发光效率或控制显色和色温用于白光发射的转换光的混合比。

7. 发明授权

US07923716B2 Nitride semiconductor device 有权
标题翻译：氮化物半导体器件
公开(公告)号：US07923716B2
公开(公告)日：2011-04-12
申请号：US12188698
申请日：2008-08-08
申请人： Soo Min Lee , Hee Seok Park , Jae Woong Han , Seong Suk Lee , Cheol Soo Sone
发明人： Soo Min Lee , Hee Seok Park , Jae Woong Han , Seong Suk Lee , Cheol Soo Sone
IPC分类号： H01L31/00
CPC分类号： H01L33/32 , B82Y10/00 , B82Y20/00 , H01L33/06
摘要： There is provided a nitride semiconductor device including: an n-type nitride semiconductor layer; a p-type nitride semiconductor layer; and an active layer formed between the n-type and p-type nitride semiconductor layers, the active layer including a plurality of quantum well layers and at least one quantum barrier layer deposited alternately with each other, wherein the active layer includes a first quantum well layer, a second quantum well layer formed adjacent to the first quantum well layer toward the p-type nitride semiconductor layer and having a quantum level higher than a quantum level of the first quantum well layer, and a tunneling quantum barrier layer formed between the first and second quantum well layers and having a thickness enabling a carrier to be tunneled therethrough.
摘要翻译：提供了一种氮化物半导体器件，包括：n型氮化物半导体层; p型氮化物半导体层; 以及形成在所述n型和p型氮化物半导体层之间的有源层，所述有源层包括彼此交替沉积的多个量子阱层和至少一个量子势垒层，其中所述有源层包括第一量子阱层，与第一量子阱层相邻形成朝向p型氮化物半导体层并且具有高于第一量子阱层的量子级的量子级的第二量子阱层，以及形成在第一量子阱层之间的隧穿量子势垒层和第二量子阱层，并且具有能够使载体穿过其的厚度。

8. 发明申请

US20130056747A1 NITRIDE SEMICONDUCTOR LIGHT EMITTING DEVICE AND MANUFACTURING METHOD THEREOF 审中-公开
标题翻译：氮化物半导体发光器件及其制造方法
公开(公告)号：US20130056747A1
公开(公告)日：2013-03-07
申请号：US13595480
申请日：2012-08-27
申请人： Jin Sub LEE , Jung Sup Kim , Seong Suk Lee , Tae Young Park , Cheol Soo Sone
发明人： Jin Sub LEE , Jung Sup Kim , Seong Suk Lee , Tae Young Park , Cheol Soo Sone
IPC分类号： H01L33/02
CPC分类号： H01L21/02573 , H01L21/0242 , H01L21/02458 , H01L21/02507 , H01L21/0254 , H01L21/0262 , H01L33/007 , H01L33/025 , H01L33/32
摘要： A nitride semiconductor light emitting device and a manufacturing method thereof are provided. The nitride semiconductor light emitting device includes: forming a first conductivity-type nitride semiconductor layer on a substrate; forming an active layer on the first conductivity-type nitride semiconductor layer; and forming a second conductivity-type nitride semiconductor layer on the active layer. High output can be obtained by increasing doping efficiency in growing the conductivity type nitride semiconductor layer.
摘要翻译：提供一种氮化物半导体发光器件及其制造方法。氮化物半导体发光器件包括：在衬底上形成第一导电型氮化物半导体层; 在所述第一导电型氮化物半导体层上形成有源层; 以及在所述有源层上形成第二导电型氮化物半导体层。可以通过增加导电型氮化物半导体层的生长中的掺杂效率来获得高输出。

9. 发明申请

US20110186815A1 NITRIDE SEMICONDUCTOR DEVICE 有权
标题翻译：氮化物半导体器件
公开(公告)号：US20110186815A1
公开(公告)日：2011-08-04
申请号：US13083990
申请日：2011-04-11
申请人： Soo Min LEE , Hee Seok Park , Jae Woong Han , Seong Suk Lee , Cheol Soo Sone
发明人： Soo Min LEE , Hee Seok Park , Jae Woong Han , Seong Suk Lee , Cheol Soo Sone
IPC分类号： H01L29/15
CPC分类号： H01L33/32 , B82Y10/00 , B82Y20/00 , H01L33/06
摘要： There is provided a nitride semiconductor device including: an n-type nitride semiconductor layer; a p-type nitride semiconductor layer; and an active layer formed between the n-type and p-type nitride semiconductor layers, the active layer including a plurality of quantum well layers and at least one quantum barrier layer deposited alternately with each other, wherein the active layer includes a first quantum well layer, a second quantum well layer formed adjacent to the first quantum well layer toward the p-type nitride semiconductor layer and having a quantum level higher than a quantum level of the first quantum well layer, and a tunneling quantum barrier layer formed between the first and second quantum well layers and having a thickness enabling a carrier to be tunneled therethrough.
摘要翻译：提供了一种氮化物半导体器件，包括：n型氮化物半导体层; p型氮化物半导体层; 以及形成在所述n型和p型氮化物半导体层之间的有源层，所述有源层包括彼此交替沉积的多个量子阱层和至少一个量子势垒层，其中所述有源层包括第一量子阱层，与第一量子阱层相邻形成朝向p型氮化物半导体层并且具有高于第一量子阱层的量子级的量子级的第二量子阱层，以及形成在第一量子阱层之间的隧穿量子势垒层和第二量子阱层，并且具有能够使载体穿过其的厚度。

10. 发明授权

US07928467B2 Nitride semiconductor light emitting device and manufacturing method of the same 有权
标题翻译：氮化物半导体发光器件及其制造方法相同
公开(公告)号：US07928467B2
公开(公告)日：2011-04-19
申请号：US12216568
申请日：2008-07-08
申请人： Hyun Soo Kim , Joon Seop Kwak , Ki Man Kang , Jin Hyun Lee , Cheol Soo Sone , Yu Seung Kim
发明人： Hyun Soo Kim , Joon Seop Kwak , Ki Man Kang , Jin Hyun Lee , Cheol Soo Sone , Yu Seung Kim
IPC分类号： H01L33/00 , H01L33/42
CPC分类号： H01L33/42 , H01L33/0095 , H01L33/32 , H01L33/40
摘要： There is provided a nitride semiconductor light emitting device including: a light emitting structure including n-type and p-type nitride semiconductor layers and an active layer disposed therebetween; n- and p-electrodes electrically connected to the n-type and p-type nitride semiconductor layers, respectively; and an n-type ohmic contact layer disposed between the n-type nitride semiconductor layer and the n-electrode and including a first layer and a second layer, the first layer formed of an In-containing material, and the second layer disposed on the first layer and formed of a transparent conductive oxide. The nitride semiconductor light emitting device including the n-electrode exhibits high light transmittance and superior electrical characteristics. Further, the nitride semiconductor light emitting device can be manufactured by an optimal method to ensure superb optical and electrical characteristics.
摘要翻译：提供了一种氮化物半导体发光器件，包括：包括n型和p型氮化物半导体层的发光结构和设置在其间的有源层; 分别与n型和p型氮化物半导体层电连接的n型和p型电极; 以及设置在n型氮化物半导体层和n电极之间并且包括第一层和第二层的n型欧姆接触层，第一层由含In材料形成，第二层设置在第二层上第一层并由透明导电氧化物形成。包括n电极的氮化物半导体发光器件具有高透光率和优异的电特性。此外，可以通过最佳方法制造氮化物半导体发光器件，以确保极好的光学和电气特性。

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